EP2599112A4 - Semiconductor device and structure - Google Patents

Semiconductor device and structure Download PDF

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Publication number
EP2599112A4
EP2599112A4 EP11812914.7A EP11812914A EP2599112A4 EP 2599112 A4 EP2599112 A4 EP 2599112A4 EP 11812914 A EP11812914 A EP 11812914A EP 2599112 A4 EP2599112 A4 EP 2599112A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11812914.7A
Other languages
German (de)
French (fr)
Other versions
EP2599112A2 (en
Inventor
Zvi Or-Bach
Deepak C. Sekar
Brian Cronquist
Zeev Wurman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monolithic 3D Inc
Original Assignee
Monolithic 3d S A
Monolithic 3D Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/847,911 external-priority patent/US7960242B2/en
Priority claimed from US12/849,272 external-priority patent/US7986042B2/en
Priority claimed from US12/859,665 external-priority patent/US8405420B2/en
Priority claimed from US12/894,252 external-priority patent/US8258810B2/en
Priority claimed from US12/900,379 external-priority patent/US8395191B2/en
Priority claimed from US12/901,890 external-priority patent/US8026521B1/en
Priority claimed from US12/904,119 external-priority patent/US8476145B2/en
Priority claimed from US12/904,108 external-priority patent/US8362800B2/en
Priority claimed from US12/941,073 external-priority patent/US8427200B2/en
Priority claimed from US12/941,075 external-priority patent/US8373439B2/en
Priority claimed from US12/941,074 external-priority patent/US9577642B2/en
Priority claimed from US12/949,617 external-priority patent/US8754533B2/en
Priority claimed from US12/951,913 external-priority patent/US8536023B2/en
Priority claimed from US12/951,924 external-priority patent/US8492886B2/en
Priority claimed from US12/970,602 external-priority patent/US9711407B2/en
Priority claimed from US13/016,313 external-priority patent/US8362482B2/en
Priority claimed from US13/041,405 external-priority patent/US8901613B2/en
Priority claimed from US13/041,406 external-priority patent/US9509313B2/en
Application filed by Monolithic 3d S A, Monolithic 3D Inc filed Critical Monolithic 3d S A
Priority to EP18195847.1A priority Critical patent/EP3460845A1/en
Publication of EP2599112A2 publication Critical patent/EP2599112A2/en
Publication of EP2599112A4 publication Critical patent/EP2599112A4/en
Withdrawn legal-status Critical Current

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    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H10B63/845—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays the switching components being connected to a common vertical conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
EP11812914.7A 2010-07-30 2011-06-28 Semiconductor device and structure Withdrawn EP2599112A4 (en)

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US12/847,911 US7960242B2 (en) 2009-04-14 2010-07-30 Method for fabrication of a semiconductor device and structure
US12/849,272 US7986042B2 (en) 2009-04-14 2010-08-03 Method for fabrication of a semiconductor device and structure
US12/859,665 US8405420B2 (en) 2009-04-14 2010-08-19 System comprising a semiconductor device and structure
US12/894,252 US8258810B2 (en) 2010-09-30 2010-09-30 3D semiconductor device
US12/900,379 US8395191B2 (en) 2009-10-12 2010-10-07 Semiconductor device and structure
US12/901,890 US8026521B1 (en) 2010-10-11 2010-10-11 Semiconductor device and structure
US12/904,119 US8476145B2 (en) 2010-10-13 2010-10-13 Method of fabricating a semiconductor device and structure
US12/904,108 US8362800B2 (en) 2010-10-13 2010-10-13 3D semiconductor device including field repairable logics
US12/941,074 US9577642B2 (en) 2009-04-14 2010-11-07 Method to form a 3D semiconductor device
US12/941,075 US8373439B2 (en) 2009-04-14 2010-11-07 3D semiconductor device
US12/941,073 US8427200B2 (en) 2009-04-14 2010-11-07 3D semiconductor device
US12/949,617 US8754533B2 (en) 2009-04-14 2010-11-18 Monolithic three-dimensional semiconductor device and structure
US12/951,913 US8536023B2 (en) 2010-11-22 2010-11-22 Method of manufacturing a semiconductor device and structure
US12/951,924 US8492886B2 (en) 2010-02-16 2010-11-22 3D integrated circuit with logic
US12/970,602 US9711407B2 (en) 2009-04-14 2010-12-16 Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer
US13/016,313 US8362482B2 (en) 2009-04-14 2011-01-28 Semiconductor device and structure
US13/041,405 US8901613B2 (en) 2011-03-06 2011-03-06 Semiconductor device and structure for heat removal
US13/041,406 US9509313B2 (en) 2009-04-14 2011-03-06 3D semiconductor device
PCT/US2011/042071 WO2012015550A2 (en) 2010-07-30 2011-06-28 Semiconductor device and structure

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