EP2396815A4 - Detecting defects on a wafer - Google Patents

Detecting defects on a wafer

Info

Publication number
EP2396815A4
EP2396815A4 EP10741683A EP10741683A EP2396815A4 EP 2396815 A4 EP2396815 A4 EP 2396815A4 EP 10741683 A EP10741683 A EP 10741683A EP 10741683 A EP10741683 A EP 10741683A EP 2396815 A4 EP2396815 A4 EP 2396815A4
Authority
EP
European Patent Office
Prior art keywords
wafer
detecting defects
defects
detecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10741683A
Other languages
German (de)
French (fr)
Other versions
EP2396815A2 (en
Inventor
Junqing Huang
Yong Zhang
Stephanie Chen
Tao Luo
Lisheng Gao
Richard Wallingford
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Publication of EP2396815A2 publication Critical patent/EP2396815A2/en
Publication of EP2396815A4 publication Critical patent/EP2396815A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
EP10741683A 2009-02-13 2010-02-10 Detecting defects on a wafer Withdrawn EP2396815A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15247709P 2009-02-13 2009-02-13
PCT/US2010/023802 WO2010093733A2 (en) 2009-02-13 2010-02-10 Detecting defects on a wafer

Publications (2)

Publication Number Publication Date
EP2396815A2 EP2396815A2 (en) 2011-12-21
EP2396815A4 true EP2396815A4 (en) 2012-11-28

Family

ID=42562263

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10741683A Withdrawn EP2396815A4 (en) 2009-02-13 2010-02-10 Detecting defects on a wafer

Country Status (7)

Country Link
EP (1) EP2396815A4 (en)
JP (1) JP5570530B2 (en)
KR (1) KR101674698B1 (en)
CN (1) CN102396058B (en)
IL (1) IL214488A (en)
SG (1) SG173586A1 (en)
WO (1) WO2010093733A2 (en)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7570796B2 (en) 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US7676077B2 (en) 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
WO2008086282A2 (en) 2007-01-05 2008-07-17 Kla-Tencor Corporation Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions
US8213704B2 (en) 2007-05-09 2012-07-03 Kla-Tencor Corp. Methods and systems for detecting defects in a reticle design pattern
US7796804B2 (en) 2007-07-20 2010-09-14 Kla-Tencor Corp. Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer
US8139844B2 (en) 2008-04-14 2012-03-20 Kla-Tencor Corp. Methods and systems for determining a defect criticality index for defects on wafers
KR101841897B1 (en) 2008-07-28 2018-03-23 케이엘에이-텐코어 코오포레이션 Computer-implemented methods, computer-readable media, and systems for classifying defects detected in a memory device area on a wafer
US8775101B2 (en) 2009-02-13 2014-07-08 Kla-Tencor Corp. Detecting defects on a wafer
US8204297B1 (en) 2009-02-27 2012-06-19 Kla-Tencor Corp. Methods and systems for classifying defects detected on a reticle
US8112241B2 (en) 2009-03-13 2012-02-07 Kla-Tencor Corp. Methods and systems for generating an inspection process for a wafer
US8781781B2 (en) 2010-07-30 2014-07-15 Kla-Tencor Corp. Dynamic care areas
JP2012119512A (en) * 2010-12-01 2012-06-21 Hitachi High-Technologies Corp Substrate quality evaluation method and apparatus therefor
US9170211B2 (en) 2011-03-25 2015-10-27 Kla-Tencor Corp. Design-based inspection using repeating structures
US9087367B2 (en) 2011-09-13 2015-07-21 Kla-Tencor Corp. Determining design coordinates for wafer defects
US8831334B2 (en) * 2012-01-20 2014-09-09 Kla-Tencor Corp. Segmentation for wafer inspection
US8826200B2 (en) 2012-05-25 2014-09-02 Kla-Tencor Corp. Alteration for wafer inspection
US9189844B2 (en) 2012-10-15 2015-11-17 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific information
US9053527B2 (en) * 2013-01-02 2015-06-09 Kla-Tencor Corp. Detecting defects on a wafer
US9134254B2 (en) 2013-01-07 2015-09-15 Kla-Tencor Corp. Determining a position of inspection system output in design data space
US9311698B2 (en) 2013-01-09 2016-04-12 Kla-Tencor Corp. Detecting defects on a wafer using template image matching
KR102019534B1 (en) * 2013-02-01 2019-09-09 케이엘에이 코포레이션 Detecting defects on a wafer using defect-specific and multi-channel information
US9865512B2 (en) 2013-04-08 2018-01-09 Kla-Tencor Corp. Dynamic design attributes for wafer inspection
US9310320B2 (en) 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
US9355208B2 (en) * 2013-07-08 2016-05-31 Kla-Tencor Corp. Detecting defects on a wafer
US10338004B2 (en) 2014-03-27 2019-07-02 KLA—Tencor Corp. Production sample shaping that preserves re-normalizability
US9535010B2 (en) * 2014-05-15 2017-01-03 Kla-Tencor Corp. Defect sampling for electron beam review based on defect attributes from optical inspection and optical review
US10127653B2 (en) * 2014-07-22 2018-11-13 Kla-Tencor Corp. Determining coordinates for an area of interest on a specimen
US10267746B2 (en) * 2014-10-22 2019-04-23 Kla-Tencor Corp. Automated pattern fidelity measurement plan generation
US9518934B2 (en) * 2014-11-04 2016-12-13 Kla-Tencor Corp. Wafer defect discovery
US9830421B2 (en) * 2014-12-31 2017-11-28 Kla-Tencor Corp. Alignment of inspection to design using built in targets
US10062543B2 (en) * 2015-06-23 2018-08-28 Kla-Tencor Corp. Determining multi-patterning step overlay error
CN108475422B (en) * 2015-08-12 2019-09-06 科磊股份有限公司 The position of defect is determined in electron beam image
US10535131B2 (en) * 2015-11-18 2020-01-14 Kla-Tencor Corporation Systems and methods for region-adaptive defect detection
CN105699396A (en) * 2016-03-29 2016-06-22 同高先进制造科技（太仓）有限公司 Pollution detection device and method of welding laser head protective glasses based on light scanning
US10699926B2 (en) * 2017-08-30 2020-06-30 Kla-Tencor Corp. Identifying nuisances and defects of interest in defects detected on a wafer
US11114324B2 (en) * 2019-04-10 2021-09-07 KLA Corp. Defect candidate generation for inspection

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040246476A1 (en) * 2003-06-06 2004-12-09 Bevis Christopher F. Systems for inspection of patterned or unpatterned wafers and other specimen
US20090037134A1 (en) * 2007-07-30 2009-02-05 Ashok Kulkarni Semiconductor device property extraction, generation, visualization, and monitoring methods

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JPH07159337A (en) * 1993-12-07 1995-06-23 Sony Corp Fault inspection method for semiconductor element
JP3524853B2 (en) * 1999-08-26 2004-05-10 株式会社ナノジオメトリ研究所 Pattern inspection apparatus, pattern inspection method, and recording medium
KR100335491B1 (en) * 1999-10-13 2002-05-04 윤종용 Wafer inspection system having recipe parameter library and method of setting recipe prameters for wafer inspection
JPWO2001041068A1 (en) * 1999-11-29 2004-01-08 オリンパス光学工業株式会社 Defect inspection system
EP1322941A2 (en) * 2000-10-02 2003-07-02 Applied Materials, Inc. Defect source identifier
US7693323B2 (en) * 2002-03-12 2010-04-06 Applied Materials, Inc. Multi-detector defect detection system and a method for detecting defects
KR20060075691A (en) * 2004-12-29 2006-07-04 삼성전자주식회사 Method for inspecting a defect
JP2007147376A (en) * 2005-11-25 2007-06-14 Nikon Corp Inspection device
JP4851960B2 (en) * 2006-02-24 2012-01-11 株式会社日立ハイテクノロジーズ Foreign matter inspection method and foreign matter inspection device
JP2007298284A (en) * 2006-04-27 2007-11-15 Mitsui Mining & Smelting Co Ltd Hexavalent chromium quantifying method
JP4641278B2 (en) * 2006-05-02 2011-03-02 リンナイ株式会社 Gas burner
JP5022191B2 (en) * 2007-11-16 2012-09-12 株式会社日立ハイテクノロジーズ Defect inspection method and defect inspection apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040246476A1 (en) * 2003-06-06 2004-12-09 Bevis Christopher F. Systems for inspection of patterned or unpatterned wafers and other specimen
US20090037134A1 (en) * 2007-07-30 2009-02-05 Ashok Kulkarni Semiconductor device property extraction, generation, visualization, and monitoring methods

Also Published As

Publication number Publication date
IL214488A (en) 2016-04-21
WO2010093733A3 (en) 2010-10-28
EP2396815A2 (en) 2011-12-21
JP5570530B2 (en) 2014-08-13
KR20110124303A (en) 2011-11-16
SG173586A1 (en) 2011-09-29
IL214488A0 (en) 2011-09-27
CN102396058A (en) 2012-03-28
CN102396058B (en) 2014-08-20
WO2010093733A2 (en) 2010-08-19
KR101674698B1 (en) 2016-11-09
JP2012518278A (en) 2012-08-09

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Effective date: 20121026

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Ipc: G01N 21/956 20060101ALI20121023BHEP

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