EP2113549A3 - Phosphor composition and light-emitting device using the same - Google Patents

Phosphor composition and light-emitting device using the same Download PDF

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Publication number
EP2113549A3
EP2113549A3 EP09007211A EP09007211A EP2113549A3 EP 2113549 A3 EP2113549 A3 EP 2113549A3 EP 09007211 A EP09007211 A EP 09007211A EP 09007211 A EP09007211 A EP 09007211A EP 2113549 A3 EP2113549 A3 EP 2113549A3
Authority
EP
European Patent Office
Prior art keywords
malsin
light
same
emitting device
phosphor composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP09007211A
Other languages
German (de)
French (fr)
Other versions
EP2113549A2 (en
EP2113549B1 (en
Inventor
Shozo Oshio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
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Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2004250739A external-priority patent/JP2005336450A/en
Priority claimed from JP2004363534A external-priority patent/JP4128564B2/en
Application filed by Panasonic Corp filed Critical Panasonic Corp
Publication of EP2113549A2 publication Critical patent/EP2113549A2/en
Publication of EP2113549A3 publication Critical patent/EP2113549A3/en
Application granted granted Critical
Publication of EP2113549B1 publication Critical patent/EP2113549B1/en
Active legal-status Critical Current
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/917—Electroluminescent

Abstract

A phosphor composition comprising, as a main component of a phosphor host, a nitride represented by any of a composition formula of MAlSiN3·a'Si3N4, MAlSiN3·a'MSiN2, MAlSiN3·a'M2Si5N8, and MAlSiN3·a'MSi7N10, and comprising a metal ion selected from rare earth ions and transition metal ions as a luminescent center ion is disclosed, wherein M is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, and Zn, and a' is a numerical value satisfying 0.25 ≤ a' ≤ 2.
EP09007211A 2004-04-27 2005-04-26 Phosphor composition and light-emitting device using the same Active EP2113549B1 (en)

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JP2004182797 2004-06-21
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JP2004363534A JP4128564B2 (en) 2004-04-27 2004-12-15 Light emitting device
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US20090295272A1 (en) 2009-12-03
US8226853B2 (en) 2012-07-24
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US20120262052A1 (en) 2012-10-18
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US7615797B2 (en) 2009-11-10
US7892453B2 (en) 2011-02-22
US8419975B2 (en) 2013-04-16
US7811472B2 (en) 2010-10-12
US20080128654A1 (en) 2008-06-05
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US7507354B2 (en) 2009-03-24
EP1749074B1 (en) 2016-04-20
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US8221649B2 (en) 2012-07-17
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US20130221838A1 (en) 2013-08-29
US20090250663A1 (en) 2009-10-08
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US7651634B2 (en) 2010-01-26
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US20080258110A1 (en) 2008-10-23
US7391060B2 (en) 2008-06-24
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US20070259206A1 (en) 2007-11-08
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US20080182127A1 (en) 2008-07-31
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US20080191610A1 (en) 2008-08-14
KR20080043370A (en) 2008-05-16

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