DE69926960D1 - Verfahren zur Herstellung einer photovoltaischen Vorrichtung - Google Patents
Verfahren zur Herstellung einer photovoltaischen VorrichtungInfo
- Publication number
- DE69926960D1 DE69926960D1 DE69926960T DE69926960T DE69926960D1 DE 69926960 D1 DE69926960 D1 DE 69926960D1 DE 69926960 T DE69926960 T DE 69926960T DE 69926960 T DE69926960 T DE 69926960T DE 69926960 D1 DE69926960 D1 DE 69926960D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- photovoltaic device
- photovoltaic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/076—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System including AIVBIV alloys, e.g. SiGe, SiC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16532998 | 1998-06-12 | ||
JP10165329A JPH11354820A (ja) | 1998-06-12 | 1998-06-12 | 光電変換素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69926960D1 true DE69926960D1 (de) | 2005-10-06 |
DE69926960T2 DE69926960T2 (de) | 2006-07-13 |
Family
ID=15810275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69926960T Expired - Lifetime DE69926960T2 (de) | 1998-06-12 | 1999-06-11 | Verfahren zur Herstellung einer photovoltaischen Vorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6242686B1 (de) |
EP (1) | EP0969523B1 (de) |
JP (1) | JPH11354820A (de) |
DE (1) | DE69926960T2 (de) |
Families Citing this family (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1056139A3 (de) * | 1999-05-28 | 2007-09-19 | Sharp Kabushiki Kaisha | Photoelektrische Umwandlungsvorrichtung und Herstellungsverfahren |
US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
US6566594B2 (en) * | 2000-04-05 | 2003-05-20 | Tdk Corporation | Photovoltaic element |
WO2002003437A1 (en) * | 2000-06-30 | 2002-01-10 | Motorola, Inc., A Corporation Of The State Of Delaware | Hybrid semiconductor structure and device |
US6555946B1 (en) | 2000-07-24 | 2003-04-29 | Motorola, Inc. | Acoustic wave device and process for forming the same |
US6590236B1 (en) | 2000-07-24 | 2003-07-08 | Motorola, Inc. | Semiconductor structure for use with high-frequency signals |
US6493497B1 (en) | 2000-09-26 | 2002-12-10 | Motorola, Inc. | Electro-optic structure and process for fabricating same |
US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
US6501121B1 (en) | 2000-11-15 | 2002-12-31 | Motorola, Inc. | Semiconductor structure |
US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US6531740B2 (en) | 2001-07-17 | 2003-03-11 | Motorola, Inc. | Integrated impedance matching and stability network |
US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
JP2006508253A (ja) * | 2002-11-27 | 2006-03-09 | ザ・ユニバーシティ・オブ・トレド | 液状電解物を有した集積型光電気化学とそのシステム |
US7420275B1 (en) * | 2003-09-24 | 2008-09-02 | Novellus Systems, Inc. | Boron-doped SIC copper diffusion barrier films |
US6967405B1 (en) | 2003-09-24 | 2005-11-22 | Yongsik Yu | Film for copper diffusion barrier |
US7667133B2 (en) * | 2003-10-29 | 2010-02-23 | The University Of Toledo | Hybrid window layer for photovoltaic cells |
US7282438B1 (en) | 2004-06-15 | 2007-10-16 | Novellus Systems, Inc. | Low-k SiC copper diffusion barrier films |
JP2006269607A (ja) * | 2005-03-23 | 2006-10-05 | Canon Inc | 光起電力素子の製造方法 |
WO2006110613A2 (en) * | 2005-04-11 | 2006-10-19 | The University Of Toledo | Integrated photovoltaic-electrolysis cell |
JP2009533857A (ja) * | 2006-04-13 | 2009-09-17 | チバ ホールディング インコーポレーテッド | 太陽電池 |
US7655542B2 (en) * | 2006-06-23 | 2010-02-02 | Applied Materials, Inc. | Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device |
US20080173350A1 (en) * | 2007-01-18 | 2008-07-24 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
US7582515B2 (en) * | 2007-01-18 | 2009-09-01 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
US8203071B2 (en) * | 2007-01-18 | 2012-06-19 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
US20080223440A1 (en) * | 2007-01-18 | 2008-09-18 | Shuran Sheng | Multi-junction solar cells and methods and apparatuses for forming the same |
US7915166B1 (en) | 2007-02-22 | 2011-03-29 | Novellus Systems, Inc. | Diffusion barrier and etch stop films |
US8173537B1 (en) | 2007-03-29 | 2012-05-08 | Novellus Systems, Inc. | Methods for reducing UV and dielectric diffusion barrier interaction |
US20080245414A1 (en) * | 2007-04-09 | 2008-10-09 | Shuran Sheng | Methods for forming a photovoltaic device with low contact resistance |
EP1993143A1 (de) * | 2007-05-14 | 2008-11-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterbauelement, Verfahren zu dessen Herstellung und dessen Verwendung |
US7875486B2 (en) * | 2007-07-10 | 2011-01-25 | Applied Materials, Inc. | Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning |
DE102007033444A1 (de) * | 2007-07-18 | 2009-01-29 | Schott Solar Gmbh | Silizium-Mehrfachsolarzelle und Verfahren zu deren Herstellung |
CN101542745B (zh) * | 2007-07-24 | 2013-03-06 | 应用材料公司 | 多结太阳能电池及其形成方法与设备 |
US8291174B2 (en) * | 2007-08-15 | 2012-10-16 | Micron Technology, Inc. | Memory device and method having on-board address protection system for facilitating interface with multiple processors, and computer system using same |
US20090104733A1 (en) * | 2007-10-22 | 2009-04-23 | Yong Kee Chae | Microcrystalline silicon deposition for thin film solar applications |
JP2011503848A (ja) * | 2007-11-02 | 2011-01-27 | アプライド マテリアルズ インコーポレイテッド | 堆積プロセス間のプラズマ処置 |
US20090130827A1 (en) * | 2007-11-02 | 2009-05-21 | Soo Young Choi | Intrinsic amorphous silicon layer |
US8124522B1 (en) | 2008-04-11 | 2012-02-28 | Novellus Systems, Inc. | Reducing UV and dielectric diffusion barrier interaction through the modulation of optical properties |
US20110180124A1 (en) * | 2008-08-19 | 2011-07-28 | Oerlikon Solar Ag, Truebbach | Photovoltaic cell and method of manufacturing a photovoltaic cell |
CN102138220A (zh) * | 2008-08-29 | 2011-07-27 | 欧瑞康太阳Ip股份公司(特吕巴赫) | 用于为具有降低的光致衰退的光伏器件淀积非晶硅膜以改进稳定性能的方法 |
US8895842B2 (en) * | 2008-08-29 | 2014-11-25 | Applied Materials, Inc. | High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells |
US20100059110A1 (en) * | 2008-09-11 | 2010-03-11 | Applied Materials, Inc. | Microcrystalline silicon alloys for thin film and wafer based solar applications |
KR101025932B1 (ko) * | 2008-10-06 | 2011-03-30 | 김용환 | 전자빔 후처리를 이용한 투명성 산화 전극 제조 방법 |
JP5518347B2 (ja) * | 2009-02-26 | 2014-06-11 | 三洋電機株式会社 | 太陽電池の製造方法 |
US20110114177A1 (en) * | 2009-07-23 | 2011-05-19 | Applied Materials, Inc. | Mixed silicon phase film for high efficiency thin film silicon solar cells |
CN102844891A (zh) * | 2009-09-18 | 2012-12-26 | 欧瑞康太阳能股份公司(特吕巴赫) | 制造基于硅的薄膜太阳能电池的方法 |
WO2011046664A2 (en) * | 2009-10-15 | 2011-04-21 | Applied Materials, Inc. | A barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cells |
US20110088760A1 (en) * | 2009-10-20 | 2011-04-21 | Applied Materials, Inc. | Methods of forming an amorphous silicon layer for thin film solar cell application |
US20110126875A1 (en) * | 2009-12-01 | 2011-06-02 | Hien-Minh Huu Le | Conductive contact layer formed on a transparent conductive layer by a reactive sputter deposition |
US8247332B2 (en) * | 2009-12-04 | 2012-08-21 | Novellus Systems, Inc. | Hardmask materials |
US20110232753A1 (en) * | 2010-03-23 | 2011-09-29 | Applied Materials, Inc. | Methods of forming a thin-film solar energy device |
US20120152352A1 (en) * | 2010-12-15 | 2012-06-21 | Egypt Nanotechnology Center | Photovoltaic devices with an interfacial germanium-containing layer and methods for forming the same |
US9214577B2 (en) | 2012-02-28 | 2015-12-15 | International Business Machines Corporation | Reduced light degradation due to low power deposition of buffer layer |
US20130224899A1 (en) | 2012-02-28 | 2013-08-29 | International Business Machines Corporation | Enhancing efficiency in solar cells by adjusting deposition power |
KR20130112148A (ko) * | 2012-04-03 | 2013-10-14 | 엘지전자 주식회사 | 박막 태양 전지 |
US10832904B2 (en) | 2012-06-12 | 2020-11-10 | Lam Research Corporation | Remote plasma based deposition of oxygen doped silicon carbide films |
US10325773B2 (en) | 2012-06-12 | 2019-06-18 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
US9234276B2 (en) | 2013-05-31 | 2016-01-12 | Novellus Systems, Inc. | Method to obtain SiC class of films of desired composition and film properties |
US10211310B2 (en) | 2012-06-12 | 2019-02-19 | Novellus Systems, Inc. | Remote plasma based deposition of SiOC class of films |
US9337068B2 (en) | 2012-12-18 | 2016-05-10 | Lam Research Corporation | Oxygen-containing ceramic hard masks and associated wet-cleans |
US20140217408A1 (en) * | 2013-02-06 | 2014-08-07 | International Business Machines Corporaton | Buffer layer for high performing and low light degraded solar cells |
US10297442B2 (en) | 2013-05-31 | 2019-05-21 | Lam Research Corporation | Remote plasma based deposition of graded or multi-layered silicon carbide film |
JP5816800B2 (ja) * | 2014-03-19 | 2015-11-18 | パナソニックIpマネジメント株式会社 | 太陽電池の製造方法 |
US20160314964A1 (en) | 2015-04-21 | 2016-10-27 | Lam Research Corporation | Gap fill using carbon-based films |
US10002787B2 (en) | 2016-11-23 | 2018-06-19 | Lam Research Corporation | Staircase encapsulation in 3D NAND fabrication |
US9837270B1 (en) | 2016-12-16 | 2017-12-05 | Lam Research Corporation | Densification of silicon carbide film using remote plasma treatment |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2462782A1 (fr) | 1979-08-03 | 1981-02-13 | Thomson Csf | Procede de realisation d'une couche contenant du silicium et dispositif de conversion photoelectrique mettant en oeuvre ce procede |
GB2137810B (en) * | 1983-03-08 | 1986-10-22 | Agency Ind Science Techn | A solar cell of amorphous silicon |
US4471155A (en) * | 1983-04-15 | 1984-09-11 | Energy Conversion Devices, Inc. | Narrow band gap photovoltaic devices with enhanced open circuit voltage |
JPS61104678A (ja) * | 1984-10-29 | 1986-05-22 | Mitsubishi Electric Corp | アモルフアス太陽電池 |
JPH065774B2 (ja) * | 1985-08-07 | 1994-01-19 | 工業技術院長 | 太陽電池 |
JPS6273784A (ja) * | 1985-09-27 | 1987-04-04 | Sanyo Electric Co Ltd | 光起電力装置 |
US4718947A (en) | 1986-04-17 | 1988-01-12 | Solarex Corporation | Superlattice doped layers for amorphous silicon photovoltaic cells |
JPH04321277A (ja) | 1991-04-19 | 1992-11-11 | Sanyo Electric Co Ltd | 非晶質シリコン薄膜の形成方法およびこれを用いた光起電力装置の製造方法 |
US5507881A (en) * | 1991-09-30 | 1996-04-16 | Fuji Electric Co., Ltd. | Thin-film solar cell and method of manufacturing same |
US5419783A (en) * | 1992-03-26 | 1995-05-30 | Sanyo Electric Co., Ltd. | Photovoltaic device and manufacturing method therefor |
JP2648733B2 (ja) | 1993-11-18 | 1997-09-03 | プラズマ・フィジクス・コーポレーション | 半導体装置 |
JP3169337B2 (ja) * | 1995-05-30 | 2001-05-21 | キヤノン株式会社 | 光起電力素子及びその製造方法 |
JP3437386B2 (ja) | 1996-09-05 | 2003-08-18 | キヤノン株式会社 | 光起電力素子、並びにその製造方法 |
-
1998
- 1998-06-12 JP JP10165329A patent/JPH11354820A/ja active Pending
-
1999
- 1999-06-11 US US09/330,165 patent/US6242686B1/en not_active Expired - Lifetime
- 1999-06-11 EP EP99304582A patent/EP0969523B1/de not_active Expired - Lifetime
- 1999-06-11 DE DE69926960T patent/DE69926960T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0969523A3 (de) | 2000-07-05 |
JPH11354820A (ja) | 1999-12-24 |
EP0969523A2 (de) | 2000-01-05 |
US6242686B1 (en) | 2001-06-05 |
EP0969523B1 (de) | 2005-08-31 |
DE69926960T2 (de) | 2006-07-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |