DE69834415D1 - Lichtemittierendes galliumnitridhalbleiterelement mit einer aktiven schicht mit multiplexquantentrogstruktur und halbleiterlaserlichtquellenvorrichtung - Google Patents
Lichtemittierendes galliumnitridhalbleiterelement mit einer aktiven schicht mit multiplexquantentrogstruktur und halbleiterlaserlichtquellenvorrichtungInfo
- Publication number
- DE69834415D1 DE69834415D1 DE69834415T DE69834415T DE69834415D1 DE 69834415 D1 DE69834415 D1 DE 69834415D1 DE 69834415 T DE69834415 T DE 69834415T DE 69834415 T DE69834415 T DE 69834415T DE 69834415 D1 DE69834415 D1 DE 69834415D1
- Authority
- DE
- Germany
- Prior art keywords
- active layer
- source device
- gallium nitride
- light source
- laser light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5259697 | 1997-03-07 | ||
JP05259697A JP4365898B2 (ja) | 1997-03-07 | 1997-03-07 | 窒化ガリウム系半導体レーザ素子、及び半導体レーザ光源装置 |
JP6572597A JPH10261838A (ja) | 1997-03-19 | 1997-03-19 | 窒化ガリウム系半導体発光素子及び半導体レーザ光源装置 |
JP6572597 | 1997-03-19 | ||
PCT/JP1998/000828 WO1998039827A1 (fr) | 1997-03-07 | 1998-02-27 | Element electroluminescent semi-conducteur a base de nitrure de gallium muni d'une zone active presentant une structure de multiplexage a puits quantique et un dispostif semi-conducteur a sources de lumiere utilisant le laser |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69834415D1 true DE69834415D1 (de) | 2006-06-08 |
DE69834415T2 DE69834415T2 (de) | 2006-11-16 |
Family
ID=26393220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69834415T Expired - Lifetime DE69834415T2 (de) | 1997-03-07 | 1998-02-27 | Lichtemittierendes galliumnitridhalbleiterelement mit einer aktiven schicht mit multiplexquantentrogstruktur und halbleiterlaserlichtquellenvorrichtung |
Country Status (5)
Country | Link |
---|---|
US (3) | US6377597B1 (de) |
EP (1) | EP1022825B1 (de) |
KR (1) | KR100447367B1 (de) |
DE (1) | DE69834415T2 (de) |
WO (1) | WO1998039827A1 (de) |
Families Citing this family (113)
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EP1022825B1 (de) * | 1997-03-07 | 2006-05-03 | Sharp Kabushiki Kaisha | Lichtemittierendes galliumnitridhalbleiterelement mit einer aktiven schicht mit multiplexquantentrogstruktur und halbleiterlaserlichtquellenvorrichtung |
EP1168539B1 (de) * | 1999-03-04 | 2009-12-16 | Nichia Corporation | Nitridhalbleiterlaserelement |
JP2000286448A (ja) | 1999-03-31 | 2000-10-13 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
DE19955747A1 (de) | 1999-11-19 | 2001-05-23 | Osram Opto Semiconductors Gmbh | Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur |
JP2001308460A (ja) * | 2000-04-27 | 2001-11-02 | Sharp Corp | 窒化物半導体レーザ素子とその光ピックアップ装置 |
US6914922B2 (en) * | 2000-07-10 | 2005-07-05 | Sanyo Electric Co., Ltd. | Nitride based semiconductor light emitting device and nitride based semiconductor laser device |
WO2002013245A1 (en) | 2000-08-04 | 2002-02-14 | The Regents Of The University Of California | Method of controlling stress in gallium nitride films deposited on substrates |
US6649287B2 (en) * | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
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KR101045202B1 (ko) * | 2003-10-17 | 2011-06-30 | 삼성전자주식회사 | III-V 족 GaN 계 반도체 소자 및 그 제조방법 |
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-
1998
- 1998-02-27 EP EP98905700A patent/EP1022825B1/de not_active Expired - Lifetime
- 1998-02-27 WO PCT/JP1998/000828 patent/WO1998039827A1/ja active IP Right Grant
- 1998-02-27 US US09/380,537 patent/US6377597B1/en not_active Expired - Lifetime
- 1998-02-27 KR KR10-1999-7008066A patent/KR100447367B1/ko not_active IP Right Cessation
- 1998-02-27 DE DE69834415T patent/DE69834415T2/de not_active Expired - Lifetime
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2002
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2005
- 2005-05-13 US US11/128,217 patent/US7183569B2/en not_active Expired - Fee Related
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KR100447367B1 (ko) | 2004-09-08 |
KR20000075981A (ko) | 2000-12-26 |
EP1022825A1 (de) | 2000-07-26 |
EP1022825B1 (de) | 2006-05-03 |
US20020085603A1 (en) | 2002-07-04 |
US6956882B2 (en) | 2005-10-18 |
US6377597B1 (en) | 2002-04-23 |
DE69834415T2 (de) | 2006-11-16 |
US20050211971A1 (en) | 2005-09-29 |
EP1022825A4 (de) | 2000-07-26 |
US7183569B2 (en) | 2007-02-27 |
WO1998039827A1 (fr) | 1998-09-11 |
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