DE69820662D1 - Planarisierungsverfahren für halbleitende substrate - Google Patents
Planarisierungsverfahren für halbleitende substrateInfo
- Publication number
- DE69820662D1 DE69820662D1 DE69820662T DE69820662T DE69820662D1 DE 69820662 D1 DE69820662 D1 DE 69820662D1 DE 69820662 T DE69820662 T DE 69820662T DE 69820662 T DE69820662 T DE 69820662T DE 69820662 D1 DE69820662 D1 DE 69820662D1
- Authority
- DE
- Germany
- Prior art keywords
- semi
- planarization method
- chemical mechanical
- conducting substrates
- planarization process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/862,752 US6331488B1 (en) | 1997-05-23 | 1997-05-23 | Planarization process for semiconductor substrates |
PCT/US1998/010479 WO1998053487A1 (en) | 1997-05-23 | 1998-05-21 | Planarization process for semiconductor substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69820662D1 true DE69820662D1 (de) | 2004-01-29 |
DE69820662T2 DE69820662T2 (de) | 2004-10-07 |
Family
ID=25339249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69820662T Expired - Lifetime DE69820662T2 (de) | 1997-05-23 | 1998-05-21 | Planarisierungsverfahren für halbleitende substrate |
Country Status (8)
Country | Link |
---|---|
US (4) | US6331488B1 (de) |
EP (1) | EP1021824B1 (de) |
JP (1) | JP2001527699A (de) |
KR (1) | KR100413139B1 (de) |
AT (1) | ATE256916T1 (de) |
DE (1) | DE69820662T2 (de) |
TW (1) | TW519702B (de) |
WO (1) | WO1998053487A1 (de) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5967030A (en) | 1995-11-17 | 1999-10-19 | Micron Technology, Inc. | Global planarization method and apparatus |
US6075606A (en) | 1996-02-16 | 2000-06-13 | Doan; Trung T. | Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers and other microelectronic substrates |
US6331488B1 (en) | 1997-05-23 | 2001-12-18 | Micron Technology, Inc. | Planarization process for semiconductor substrates |
US6316363B1 (en) | 1999-09-02 | 2001-11-13 | Micron Technology, Inc. | Deadhesion method and mechanism for wafer processing |
US6103638A (en) * | 1997-11-07 | 2000-08-15 | Micron Technology, Inc. | Formation of planar dielectric layers using liquid interfaces |
US6218316B1 (en) * | 1998-10-22 | 2001-04-17 | Micron Technology, Inc. | Planarization of non-planar surfaces in device fabrication |
US6383934B1 (en) | 1999-09-02 | 2002-05-07 | Micron Technology, Inc. | Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids |
US6429146B2 (en) * | 1999-09-02 | 2002-08-06 | Micron Technology, Inc. | Wafer planarization using a uniform layer of material and method and apparatus for forming uniform layer of material used in semiconductor processing |
US6589889B2 (en) | 1999-09-09 | 2003-07-08 | Alliedsignal Inc. | Contact planarization using nanoporous silica materials |
US6306768B1 (en) | 1999-11-17 | 2001-10-23 | Micron Technology, Inc. | Method for planarizing microelectronic substrates having apertures |
US6498101B1 (en) | 2000-02-28 | 2002-12-24 | Micron Technology, Inc. | Planarizing pads, planarizing machines and methods for making and using planarizing pads in mechanical and chemical-mechanical planarization of microelectronic device substrate assemblies |
US6313038B1 (en) | 2000-04-26 | 2001-11-06 | Micron Technology, Inc. | Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates |
US6387289B1 (en) | 2000-05-04 | 2002-05-14 | Micron Technology, Inc. | Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6520834B1 (en) | 2000-08-09 | 2003-02-18 | Micron Technology, Inc. | Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates |
US6736869B1 (en) | 2000-08-28 | 2004-05-18 | Micron Technology, Inc. | Method for forming a planarizing pad for planarization of microelectronic substrates |
US6518172B1 (en) * | 2000-08-29 | 2003-02-11 | Micron Technology, Inc. | Method for applying uniform pressurized film across wafer |
US6592443B1 (en) | 2000-08-30 | 2003-07-15 | Micron Technology, Inc. | Method and apparatus for forming and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6623329B1 (en) | 2000-08-31 | 2003-09-23 | Micron Technology, Inc. | Method and apparatus for supporting a microelectronic substrate relative to a planarization pad |
US6652764B1 (en) | 2000-08-31 | 2003-11-25 | Micron Technology, Inc. | Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
US7307021B1 (en) * | 2000-10-02 | 2007-12-11 | National Semiconductor Corporation | Method for planarizing a thin film |
US20020164875A1 (en) * | 2001-05-04 | 2002-11-07 | Leong Lup San | Thermal mechanical planarization in integrated circuits |
US6722943B2 (en) | 2001-08-24 | 2004-04-20 | Micron Technology, Inc. | Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces |
US6666749B2 (en) | 2001-08-30 | 2003-12-23 | Micron Technology, Inc. | Apparatus and method for enhanced processing of microelectronic workpieces |
US7455955B2 (en) * | 2002-02-27 | 2008-11-25 | Brewer Science Inc. | Planarization method for multi-layer lithography processing |
US6869329B2 (en) * | 2002-04-24 | 2005-03-22 | Eastman Kodak Company | Encapsulating OLED devices with transparent cover |
US6869335B2 (en) | 2002-07-08 | 2005-03-22 | Micron Technology, Inc. | Retaining rings, planarizing apparatuses including retaining rings, and methods for planarizing micro-device workpieces |
US6860798B2 (en) | 2002-08-08 | 2005-03-01 | Micron Technology, Inc. | Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces |
US6841991B2 (en) | 2002-08-29 | 2005-01-11 | Micron Technology, Inc. | Planarity diagnostic system, E.G., for microelectronic component test systems |
US6869832B2 (en) * | 2003-02-07 | 2005-03-22 | Lockheed Martin Corporation | Method for planarizing bumped die |
US6884152B2 (en) | 2003-02-11 | 2005-04-26 | Micron Technology, Inc. | Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces |
US7131891B2 (en) * | 2003-04-28 | 2006-11-07 | Micron Technology, Inc. | Systems and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces |
US7790231B2 (en) * | 2003-07-10 | 2010-09-07 | Brewer Science Inc. | Automated process and apparatus for planarization of topographical surfaces |
US20050197721A1 (en) * | 2004-02-20 | 2005-09-08 | Yung-Cheng Chen | Control of exposure energy on a substrate |
US7264539B2 (en) | 2005-07-13 | 2007-09-04 | Micron Technology, Inc. | Systems and methods for removing microfeature workpiece surface defects |
US7326105B2 (en) | 2005-08-31 | 2008-02-05 | Micron Technology, Inc. | Retaining rings, and associated planarizing apparatuses, and related methods for planarizing micro-device workpieces |
US7438626B2 (en) | 2005-08-31 | 2008-10-21 | Micron Technology, Inc. | Apparatus and method for removing material from microfeature workpieces |
US7294049B2 (en) | 2005-09-01 | 2007-11-13 | Micron Technology, Inc. | Method and apparatus for removing material from microfeature workpieces |
US7775785B2 (en) * | 2006-12-20 | 2010-08-17 | Brewer Science Inc. | Contact planarization apparatus |
US7754612B2 (en) | 2007-03-14 | 2010-07-13 | Micron Technology, Inc. | Methods and apparatuses for removing polysilicon from semiconductor workpieces |
US20120064720A1 (en) * | 2010-09-10 | 2012-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Planarization control for semiconductor devices |
US8802569B2 (en) * | 2012-03-13 | 2014-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a semiconductor device |
JP2014053502A (ja) * | 2012-09-07 | 2014-03-20 | Toshiba Corp | 半導体装置の製造方法 |
CN104124179B (zh) * | 2013-04-26 | 2017-08-29 | 上海和辉光电有限公司 | 显示器件的封装工艺及装置 |
JP2013212581A (ja) * | 2013-07-24 | 2013-10-17 | Nikon Corp | 研磨方法 |
KR102535126B1 (ko) * | 2020-10-15 | 2023-05-22 | (주)휴넷플러스 | 유체 가압을 이용한 반도체 집적소자의 평탄화 방법 |
CN113725079A (zh) * | 2021-08-11 | 2021-11-30 | 长江存储科技有限责任公司 | 基体的表面处理方法、预处理衬底以及存储器的制作方法 |
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US6331488B1 (en) * | 1997-05-23 | 2001-12-18 | Micron Technology, Inc. | Planarization process for semiconductor substrates |
US6218316B1 (en) | 1998-10-22 | 2001-04-17 | Micron Technology, Inc. | Planarization of non-planar surfaces in device fabrication |
US6589889B2 (en) * | 1999-09-09 | 2003-07-08 | Alliedsignal Inc. | Contact planarization using nanoporous silica materials |
US6518172B1 (en) | 2000-08-29 | 2003-02-11 | Micron Technology, Inc. | Method for applying uniform pressurized film across wafer |
-
1997
- 1997-05-23 US US08/862,752 patent/US6331488B1/en not_active Expired - Fee Related
-
1998
- 1998-05-21 EP EP98924839A patent/EP1021824B1/de not_active Expired - Lifetime
- 1998-05-21 AT AT98924839T patent/ATE256916T1/de not_active IP Right Cessation
- 1998-05-21 KR KR10-1999-7010802A patent/KR100413139B1/ko not_active IP Right Cessation
- 1998-05-21 JP JP55066598A patent/JP2001527699A/ja active Pending
- 1998-05-21 DE DE69820662T patent/DE69820662T2/de not_active Expired - Lifetime
- 1998-05-21 WO PCT/US1998/010479 patent/WO1998053487A1/en active IP Right Grant
- 1998-05-21 TW TW087107895A patent/TW519702B/zh not_active IP Right Cessation
-
2001
- 2001-04-11 US US09/832,560 patent/US6743724B2/en not_active Expired - Fee Related
-
2004
- 2004-05-04 US US10/838,545 patent/US20040209475A1/en not_active Abandoned
-
2006
- 2006-07-11 US US11/484,809 patent/US20060249723A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2001527699A (ja) | 2001-12-25 |
EP1021824A4 (de) | 2000-07-26 |
KR100413139B1 (ko) | 2003-12-31 |
EP1021824A1 (de) | 2000-07-26 |
US20060249723A1 (en) | 2006-11-09 |
DE69820662T2 (de) | 2004-10-07 |
ATE256916T1 (de) | 2004-01-15 |
US20010051430A1 (en) | 2001-12-13 |
US6331488B1 (en) | 2001-12-18 |
KR20010012837A (ko) | 2001-02-26 |
US6743724B2 (en) | 2004-06-01 |
TW519702B (en) | 2003-02-01 |
US20040209475A1 (en) | 2004-10-21 |
EP1021824B1 (de) | 2003-12-17 |
WO1998053487A1 (en) | 1998-11-26 |
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