DE69820662D1 - Planarisierungsverfahren für halbleitende substrate - Google Patents

Planarisierungsverfahren für halbleitende substrate

Info

Publication number
DE69820662D1
DE69820662D1 DE69820662T DE69820662T DE69820662D1 DE 69820662 D1 DE69820662 D1 DE 69820662D1 DE 69820662 T DE69820662 T DE 69820662T DE 69820662 T DE69820662 T DE 69820662T DE 69820662 D1 DE69820662 D1 DE 69820662D1
Authority
DE
Germany
Prior art keywords
semi
planarization method
chemical mechanical
conducting substrates
planarization process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69820662T
Other languages
English (en)
Other versions
DE69820662T2 (de
Inventor
T Doan
T Blalock
Mark Durcan
G Meikle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of DE69820662D1 publication Critical patent/DE69820662D1/de
Application granted granted Critical
Publication of DE69820662T2 publication Critical patent/DE69820662T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
DE69820662T 1997-05-23 1998-05-21 Planarisierungsverfahren für halbleitende substrate Expired - Lifetime DE69820662T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/862,752 US6331488B1 (en) 1997-05-23 1997-05-23 Planarization process for semiconductor substrates
PCT/US1998/010479 WO1998053487A1 (en) 1997-05-23 1998-05-21 Planarization process for semiconductor substrates

Publications (2)

Publication Number Publication Date
DE69820662D1 true DE69820662D1 (de) 2004-01-29
DE69820662T2 DE69820662T2 (de) 2004-10-07

Family

ID=25339249

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69820662T Expired - Lifetime DE69820662T2 (de) 1997-05-23 1998-05-21 Planarisierungsverfahren für halbleitende substrate

Country Status (8)

Country Link
US (4) US6331488B1 (de)
EP (1) EP1021824B1 (de)
JP (1) JP2001527699A (de)
KR (1) KR100413139B1 (de)
AT (1) ATE256916T1 (de)
DE (1) DE69820662T2 (de)
TW (1) TW519702B (de)
WO (1) WO1998053487A1 (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5967030A (en) 1995-11-17 1999-10-19 Micron Technology, Inc. Global planarization method and apparatus
US6075606A (en) 1996-02-16 2000-06-13 Doan; Trung T. Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers and other microelectronic substrates
US6331488B1 (en) 1997-05-23 2001-12-18 Micron Technology, Inc. Planarization process for semiconductor substrates
US6316363B1 (en) 1999-09-02 2001-11-13 Micron Technology, Inc. Deadhesion method and mechanism for wafer processing
US6103638A (en) * 1997-11-07 2000-08-15 Micron Technology, Inc. Formation of planar dielectric layers using liquid interfaces
US6218316B1 (en) * 1998-10-22 2001-04-17 Micron Technology, Inc. Planarization of non-planar surfaces in device fabrication
US6383934B1 (en) 1999-09-02 2002-05-07 Micron Technology, Inc. Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids
US6429146B2 (en) * 1999-09-02 2002-08-06 Micron Technology, Inc. Wafer planarization using a uniform layer of material and method and apparatus for forming uniform layer of material used in semiconductor processing
US6589889B2 (en) 1999-09-09 2003-07-08 Alliedsignal Inc. Contact planarization using nanoporous silica materials
US6306768B1 (en) 1999-11-17 2001-10-23 Micron Technology, Inc. Method for planarizing microelectronic substrates having apertures
US6498101B1 (en) 2000-02-28 2002-12-24 Micron Technology, Inc. Planarizing pads, planarizing machines and methods for making and using planarizing pads in mechanical and chemical-mechanical planarization of microelectronic device substrate assemblies
US6313038B1 (en) 2000-04-26 2001-11-06 Micron Technology, Inc. Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates
US6387289B1 (en) 2000-05-04 2002-05-14 Micron Technology, Inc. Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6520834B1 (en) 2000-08-09 2003-02-18 Micron Technology, Inc. Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates
US6736869B1 (en) 2000-08-28 2004-05-18 Micron Technology, Inc. Method for forming a planarizing pad for planarization of microelectronic substrates
US6518172B1 (en) * 2000-08-29 2003-02-11 Micron Technology, Inc. Method for applying uniform pressurized film across wafer
US6592443B1 (en) 2000-08-30 2003-07-15 Micron Technology, Inc. Method and apparatus for forming and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates
US6623329B1 (en) 2000-08-31 2003-09-23 Micron Technology, Inc. Method and apparatus for supporting a microelectronic substrate relative to a planarization pad
US6652764B1 (en) 2000-08-31 2003-11-25 Micron Technology, Inc. Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates
US7307021B1 (en) * 2000-10-02 2007-12-11 National Semiconductor Corporation Method for planarizing a thin film
US20020164875A1 (en) * 2001-05-04 2002-11-07 Leong Lup San Thermal mechanical planarization in integrated circuits
US6722943B2 (en) 2001-08-24 2004-04-20 Micron Technology, Inc. Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces
US6666749B2 (en) 2001-08-30 2003-12-23 Micron Technology, Inc. Apparatus and method for enhanced processing of microelectronic workpieces
US7455955B2 (en) * 2002-02-27 2008-11-25 Brewer Science Inc. Planarization method for multi-layer lithography processing
US6869329B2 (en) * 2002-04-24 2005-03-22 Eastman Kodak Company Encapsulating OLED devices with transparent cover
US6869335B2 (en) 2002-07-08 2005-03-22 Micron Technology, Inc. Retaining rings, planarizing apparatuses including retaining rings, and methods for planarizing micro-device workpieces
US6860798B2 (en) 2002-08-08 2005-03-01 Micron Technology, Inc. Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces
US6841991B2 (en) 2002-08-29 2005-01-11 Micron Technology, Inc. Planarity diagnostic system, E.G., for microelectronic component test systems
US6869832B2 (en) * 2003-02-07 2005-03-22 Lockheed Martin Corporation Method for planarizing bumped die
US6884152B2 (en) 2003-02-11 2005-04-26 Micron Technology, Inc. Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces
US7131891B2 (en) * 2003-04-28 2006-11-07 Micron Technology, Inc. Systems and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces
US7790231B2 (en) * 2003-07-10 2010-09-07 Brewer Science Inc. Automated process and apparatus for planarization of topographical surfaces
US20050197721A1 (en) * 2004-02-20 2005-09-08 Yung-Cheng Chen Control of exposure energy on a substrate
US7264539B2 (en) 2005-07-13 2007-09-04 Micron Technology, Inc. Systems and methods for removing microfeature workpiece surface defects
US7326105B2 (en) 2005-08-31 2008-02-05 Micron Technology, Inc. Retaining rings, and associated planarizing apparatuses, and related methods for planarizing micro-device workpieces
US7438626B2 (en) 2005-08-31 2008-10-21 Micron Technology, Inc. Apparatus and method for removing material from microfeature workpieces
US7294049B2 (en) 2005-09-01 2007-11-13 Micron Technology, Inc. Method and apparatus for removing material from microfeature workpieces
US7775785B2 (en) * 2006-12-20 2010-08-17 Brewer Science Inc. Contact planarization apparatus
US7754612B2 (en) 2007-03-14 2010-07-13 Micron Technology, Inc. Methods and apparatuses for removing polysilicon from semiconductor workpieces
US20120064720A1 (en) * 2010-09-10 2012-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Planarization control for semiconductor devices
US8802569B2 (en) * 2012-03-13 2014-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a semiconductor device
JP2014053502A (ja) * 2012-09-07 2014-03-20 Toshiba Corp 半導体装置の製造方法
CN104124179B (zh) * 2013-04-26 2017-08-29 上海和辉光电有限公司 显示器件的封装工艺及装置
JP2013212581A (ja) * 2013-07-24 2013-10-17 Nikon Corp 研磨方法
KR102535126B1 (ko) * 2020-10-15 2023-05-22 (주)휴넷플러스 유체 가압을 이용한 반도체 집적소자의 평탄화 방법
CN113725079A (zh) * 2021-08-11 2021-11-30 长江存储科技有限责任公司 基体的表面处理方法、预处理衬底以及存储器的制作方法

Family Cites Families (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US35217A (en) * 1862-05-13 Improvement in breech-loading fire-arms
US1777310A (en) 1928-03-07 1930-10-07 New York Belting & Packing Com Press
US2373770A (en) 1942-05-07 1945-04-17 Martin Russell Press
US2431943A (en) 1943-08-12 1947-12-02 Polaroid Corp Press mechanism
GB639658A (en) 1947-04-15 1950-07-05 Harold Vezey Strong Improvements relating to the manufacture of electrical circuits and circuit components
US3120205A (en) 1956-02-07 1964-02-04 Gen Tire & Rubber Co Forming pad for hydraulic press
US3135998A (en) 1960-11-03 1964-06-09 Jr Aubrey A Fowler Fluid pressure operated press
GB998210A (en) 1962-01-10 1965-07-14 Verson Allsteel Press Co Improvements in fluid-operated presses
US3850559A (en) 1973-04-18 1974-11-26 Unisil Molds Inc Apparatus for vulcanizing rubber molds
US4476780A (en) 1983-12-21 1984-10-16 Apollo Optics & Kinematics, Inc. Cube press
JPS60151048A (ja) 1984-01-19 1985-08-08 日立化成工業株式会社 積層板の製造法
IN168174B (de) * 1986-04-22 1991-02-16 Siemens Ag
US4700474A (en) 1986-11-26 1987-10-20 Multitek Corporation Apparatus and method for temporarily sealing holes in printed circuit boards
US5302343A (en) 1987-02-25 1994-04-12 Adir Jacob Process for dry sterilization of medical devices and materials
JPH0770527B2 (ja) * 1987-02-27 1995-07-31 アメリカン テレフォン アンド テレグラフ カムパニー デバイス作製方法
US6391798B1 (en) * 1987-02-27 2002-05-21 Agere Systems Guardian Corp. Process for planarization a semiconductor substrate
US6048799A (en) * 1987-02-27 2000-04-11 Lucent Technologies Inc. Device fabrication involving surface planarization
US5736424A (en) * 1987-02-27 1998-04-07 Lucent Technologies Inc. Device fabrication involving planarization
US4806195A (en) 1987-09-28 1989-02-21 Edmond Namysl Printed circuit board laminating machine
US5078820A (en) 1988-03-25 1992-01-07 Somar Corporation Method and apparatus for pressure sticking a thin film to a base plate
DE3827567A1 (de) * 1988-08-13 1990-02-22 Basf Ag Waessrige entwicklerloesung fuer positiv arbeitende photoresists
WO1990012683A1 (en) 1989-04-27 1990-11-01 Amoco Corporation Transfer fixture and process for printed circuit boards
US5650261A (en) 1989-10-27 1997-07-22 Rohm And Haas Company Positive acting photoresist comprising a photoacid, a photobase and a film forming acid-hardening resin system
US5049232A (en) 1990-08-31 1991-09-17 General Electric Company Method of making diaphragm-type pressure transducers
DE4108936A1 (de) 1991-03-19 1992-09-24 Kannegiesser H Gmbh Co Vorrichtung zum verkleben textiler flaechengebilde
US5250450A (en) 1991-04-08 1993-10-05 Micron Technology, Inc. Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance
US5122848A (en) 1991-04-08 1992-06-16 Micron Technology, Inc. Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance
US5124780A (en) * 1991-06-10 1992-06-23 Micron Technology, Inc. Conductive contact plug and a method of forming a conductive contact plug in an integrated circuit using laser planarization
DE4126409A1 (de) * 1991-08-09 1993-02-11 Hoechst Ag Strahlungsempfindliches gemisch mit einem polymeren bindemittel mit einheiten aus (alpha)-(beta)-ungesaettigten carbonsaeuren
US5849632A (en) * 1991-08-30 1998-12-15 Micron Technology, Inc. Method of passivating semiconductor wafers
US5618381A (en) 1992-01-24 1997-04-08 Micron Technology, Inc. Multiple step method of chemical-mechanical polishing which minimizes dishing
US5205770A (en) * 1992-03-12 1993-04-27 Micron Technology, Inc. Method to form high aspect ratio supports (spacers) for field emission display using micro-saw technology
JP3156344B2 (ja) 1992-03-13 2001-04-16 富士通株式会社 半導体ウェーハへのテープ添着方法とその装置
US5238862A (en) 1992-03-18 1993-08-24 Micron Technology, Inc. Method of forming a stacked capacitor with striated electrode
US5314843A (en) 1992-03-27 1994-05-24 Micron Technology, Inc. Integrated circuit polishing method
JP3060714B2 (ja) * 1992-04-15 2000-07-10 日本電気株式会社 半導体集積回路の製造方法
US5310455A (en) 1992-07-10 1994-05-10 Lsi Logic Corporation Techniques for assembling polishing pads for chemi-mechanical polishing of silicon wafers
US5331018A (en) * 1992-08-26 1994-07-19 Three Bond Co., Ltd. Bimodal cured intermixed polymeric networks which are stable at high temperature
US5562529A (en) 1992-10-08 1996-10-08 Fujitsu Limited Apparatus and method for uniformly polishing a wafer
US5232875A (en) 1992-10-15 1993-08-03 Micron Technology, Inc. Method and apparatus for improving planarity of chemical-mechanical planarization operations
US5312512A (en) 1992-10-23 1994-05-17 Ncr Corporation Global planarization using SOG and CMP
US5300155A (en) 1992-12-23 1994-04-05 Micron Semiconductor, Inc. IC chemical mechanical planarization process incorporating slurry temperature control
US5691100A (en) 1992-12-25 1997-11-25 Hoechst Japan Limited Pattern forming material including photoacid and photobase generators for large exposure latitude
US5302233A (en) 1993-03-19 1994-04-12 Micron Semiconductor, Inc. Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP)
JP3594981B2 (ja) * 1993-12-24 2004-12-02 松下電器産業株式会社 2気筒回転式密閉型圧縮機
US5624299A (en) 1993-12-27 1997-04-29 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved carrier and method of use
JPH07195391A (ja) 1993-12-28 1995-08-01 Hitachi Techno Eng Co Ltd ホットプレス
JPH07245306A (ja) 1994-01-17 1995-09-19 Sony Corp 半導体装置における膜平坦化方法
US5434107A (en) * 1994-01-28 1995-07-18 Texas Instruments Incorporated Method for planarization
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
US5492858A (en) 1994-04-20 1996-02-20 Digital Equipment Corporation Shallow trench isolation process for high aspect ratio trenches
DE69515140T2 (de) 1994-05-18 2000-08-31 At & T Corp Planarisierung in der Herstellung von Anordnungen
US5516729A (en) 1994-06-03 1996-05-14 Advanced Micro Devices, Inc. Method for planarizing a semiconductor topography using a spin-on glass material with a variable chemical-mechanical polish rate
US5533924A (en) 1994-09-01 1996-07-09 Micron Technology, Inc. Polishing apparatus, a polishing wafer carrier apparatus, a replacable component for a particular polishing apparatus and a process of polishing wafers
US5575707A (en) 1994-10-11 1996-11-19 Ontrak Systems, Inc. Polishing pad cluster for polishing a semiconductor wafer
KR960026249A (ko) 1994-12-12 1996-07-22 윌리엄 이. 힐러 고압, 저온 반도체 갭 충진 프로세스
US5679610A (en) * 1994-12-15 1997-10-21 Kabushiki Kaisha Toshiba Method of planarizing a semiconductor workpiece surface
US5650561A (en) * 1995-03-13 1997-07-22 Pulse Electronics, Inc. Diagnostic device for determining the pneumatic health of a bubble-type fuel measuring system
JPH08262720A (ja) * 1995-03-28 1996-10-11 Hoechst Ind Kk 可塑剤を含む放射線感応性組成物
US5554065A (en) 1995-06-07 1996-09-10 Clover; Richmond B. Vertically stacked planarization machine
JP3311203B2 (ja) 1995-06-13 2002-08-05 株式会社東芝 半導体装置の製造方法及び半導体製造装置、半導体ウェーハの化学的機械的ポリッシング方法
US5569062A (en) 1995-07-03 1996-10-29 Speedfam Corporation Polishing pad conditioning
US5967030A (en) * 1995-11-17 1999-10-19 Micron Technology, Inc. Global planarization method and apparatus
US5624303A (en) 1996-01-22 1997-04-29 Micron Technology, Inc. Polishing pad and a method for making a polishing pad with covalently bonded particles
US5639697A (en) 1996-01-30 1997-06-17 Vlsi Technology, Inc. Dummy underlayers for improvement in removal rate consistency during chemical mechanical polishing
US5903046A (en) * 1996-02-20 1999-05-11 Micron Technology, Inc. Integrated circuit device having cyanate ester buffer coat
US5902869A (en) 1996-03-22 1999-05-11 E. I. Du Pont De Nemours And Company Thermally stable ethylene/acid copolymers
US5643050A (en) 1996-05-23 1997-07-01 Industrial Technology Research Institute Chemical/mechanical polish (CMP) thickness monitor
US6316363B1 (en) 1999-09-02 2001-11-13 Micron Technology, Inc. Deadhesion method and mechanism for wafer processing
US6331488B1 (en) * 1997-05-23 2001-12-18 Micron Technology, Inc. Planarization process for semiconductor substrates
US6218316B1 (en) 1998-10-22 2001-04-17 Micron Technology, Inc. Planarization of non-planar surfaces in device fabrication
US6589889B2 (en) * 1999-09-09 2003-07-08 Alliedsignal Inc. Contact planarization using nanoporous silica materials
US6518172B1 (en) 2000-08-29 2003-02-11 Micron Technology, Inc. Method for applying uniform pressurized film across wafer

Also Published As

Publication number Publication date
JP2001527699A (ja) 2001-12-25
EP1021824A4 (de) 2000-07-26
KR100413139B1 (ko) 2003-12-31
EP1021824A1 (de) 2000-07-26
US20060249723A1 (en) 2006-11-09
DE69820662T2 (de) 2004-10-07
ATE256916T1 (de) 2004-01-15
US20010051430A1 (en) 2001-12-13
US6331488B1 (en) 2001-12-18
KR20010012837A (ko) 2001-02-26
US6743724B2 (en) 2004-06-01
TW519702B (en) 2003-02-01
US20040209475A1 (en) 2004-10-21
EP1021824B1 (de) 2003-12-17
WO1998053487A1 (en) 1998-11-26

Similar Documents

Publication Publication Date Title
DE69820662D1 (de) Planarisierungsverfahren für halbleitende substrate
KR101403328B1 (ko) 돌기 모양의 전극 패턴을 가지는 바이폴라 정전척 및 이를이용한 기판 처리 방법
TW200510854A (en) Method for forming film, method for forming wiring pattern, method for manufacturing semiconductor device, electro-optical device, and electronic devic
IL136287A0 (en) Methods and apparatus for cleaning semiconductor substrates after polishing of copper film
AU2001249659A1 (en) Method of forming vias in silicon carbide and resulting devices and circuits
DE69505048T2 (de) Herstellungsmethode für Halbleiterelemente in einer aktiven Schicht auf einem Trägersubstrat
ATE524827T1 (de) Verfahren zum transfer einer schicht gespannten halbleitermaterials
TW200746353A (en) Technique for stable processing of thin/fragile substrates
KR970023772A (ko) 에스오아이 (soi) 구조를 갖는 본드 결합된 기판 및 그 제조 방법
CN102804337A (zh) 通过分子键合来键合的方法
GB0317854D0 (en) Method of manufacturing diamond substrates
TW337590B (en) Manufacture of semiconductor device having reliable and fine connection hole
EP0779655A3 (de) Verfahren zum chemisch-mechanischen Polieren eines Halbleitersubstrats eines elektronischen Bauteils
DE60035648D1 (de) Verfahren zur Säuberung einer Vorrichtung zum Herstellen von Dünnfilm-Silizium
EP1394844A4 (de) Verfahren zur herstellung eines halbleiterbauelements
WO2001039257A3 (fr) Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche
ATE521087T1 (de) Mehrchipmodule mit eingebetteten kondensatoren
TW331021B (en) Manufacturing method of utilizing chemical mechanical polishing planarization pre-metal dielectric
TW330310B (en) Inter-metal dielectric planarization method
WO2002054470A3 (de) Verfahren zur kontaktierung eines dotiergebiets eines halbleiterbauelements
KR101316553B1 (ko) 십자 모양의 전극 패턴을 가지는 바이폴라 정전척 및 이를이용한 기판 처리 방법
TW339465B (en) The method for planarization metal interdielectric layer
ATE382951T1 (de) Dünnschicht halbleiteranordnung, besonders leistungsanordnung, und verfahren zu deren herstellung
TW334624B (en) The process and structure for metal interconnection of IC
TW353794B (en) Method of shallow trench isolation using selective liquid phase deposition of silicon oxide

Legal Events

Date Code Title Description
8364 No opposition during term of opposition