DE69812425T2 - Programmierbare metallisierungsstruktur mit oberflächennaher verfestigung undherstellungsverfahren dafür - Google Patents

Programmierbare metallisierungsstruktur mit oberflächennaher verfestigung undherstellungsverfahren dafür Download PDF

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Publication number
DE69812425T2
DE69812425T2 DE69812425T DE69812425T DE69812425T2 DE 69812425 T2 DE69812425 T2 DE 69812425T2 DE 69812425 T DE69812425 T DE 69812425T DE 69812425 T DE69812425 T DE 69812425T DE 69812425 T2 DE69812425 T2 DE 69812425T2
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DE
Germany
Prior art keywords
dendrite
cathode
voltage
ion conductor
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69812425T
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English (en)
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DE69812425D1 (de
Inventor
N Kozicki
C West
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arizona Board of Regents of ASU
Axon Technologies Corp
Arizona State University ASU
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Arizona Board of Regents of ASU
Axon Technologies Corp
Arizona State University ASU
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Publication of DE69812425T2 publication Critical patent/DE69812425T2/de
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Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
DE69812425T 1997-12-04 1998-12-04 Programmierbare metallisierungsstruktur mit oberflächennaher verfestigung undherstellungsverfahren dafür Expired - Lifetime DE69812425T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6750997P 1997-12-04 1997-12-04
PCT/US1998/025830 WO1999028914A2 (en) 1997-12-04 1998-12-04 Programmable sub-surface aggregating metallization structure and method of making same

Publications (2)

Publication Number Publication Date
DE69812425D1 DE69812425D1 (de) 2003-04-24
DE69812425T2 true DE69812425T2 (de) 2004-01-15

Family

ID=22076456

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69825923T Expired - Lifetime DE69825923T2 (de) 1997-12-04 1998-12-04 Programmierbare aggregierende Unterflächenmetallisierungsstruktur
DE69812425T Expired - Lifetime DE69812425T2 (de) 1997-12-04 1998-12-04 Programmierbare metallisierungsstruktur mit oberflächennaher verfestigung undherstellungsverfahren dafür

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69825923T Expired - Lifetime DE69825923T2 (de) 1997-12-04 1998-12-04 Programmierbare aggregierende Unterflächenmetallisierungsstruktur

Country Status (11)

Country Link
US (3) US6418049B1 (de)
EP (2) EP1235227B1 (de)
JP (2) JP2001525606A (de)
KR (1) KR100371102B1 (de)
CN (1) CN1260734C (de)
AT (2) ATE274744T1 (de)
AU (1) AU751949C (de)
CA (1) CA2312841C (de)
DE (2) DE69825923T2 (de)
HK (1) HK1032139A1 (de)
WO (1) WO1999028914A2 (de)

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