DE69809228T2 - Zusammensetzung und verfahren zum polieren eines verbundes, der titan enthält - Google Patents

Zusammensetzung und verfahren zum polieren eines verbundes, der titan enthält

Info

Publication number
DE69809228T2
DE69809228T2 DE69809228T DE69809228T DE69809228T2 DE 69809228 T2 DE69809228 T2 DE 69809228T2 DE 69809228 T DE69809228 T DE 69809228T DE 69809228 T DE69809228 T DE 69809228T DE 69809228 T2 DE69809228 T2 DE 69809228T2
Authority
DE
Germany
Prior art keywords
polishing
composition
containing titanium
composite containing
composite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69809228T
Other languages
English (en)
Other versions
DE69809228D1 (de
Inventor
Jiun-Fang Wang
R Sethuraman
Melbourne Cook
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rodel Inc
Original Assignee
Rodel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rodel Inc filed Critical Rodel Inc
Publication of DE69809228D1 publication Critical patent/DE69809228D1/de
Application granted granted Critical
Publication of DE69809228T2 publication Critical patent/DE69809228T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
DE69809228T 1997-03-17 1998-03-16 Zusammensetzung und verfahren zum polieren eines verbundes, der titan enthält Expired - Fee Related DE69809228T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/819,236 US5756398A (en) 1997-03-17 1997-03-17 Composition and method for polishing a composite comprising titanium
PCT/US1998/005107 WO1998041671A1 (en) 1997-03-17 1998-03-16 Composition and method for polishing a composite comprising titanium

Publications (2)

Publication Number Publication Date
DE69809228D1 DE69809228D1 (de) 2002-12-12
DE69809228T2 true DE69809228T2 (de) 2003-07-10

Family

ID=25227570

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69809228T Expired - Fee Related DE69809228T2 (de) 1997-03-17 1998-03-16 Zusammensetzung und verfahren zum polieren eines verbundes, der titan enthält

Country Status (6)

Country Link
US (1) US5756398A (de)
EP (1) EP0985059B1 (de)
JP (1) JP2001516383A (de)
KR (1) KR20000076305A (de)
DE (1) DE69809228T2 (de)
WO (1) WO1998041671A1 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5993686A (en) * 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
US6132637A (en) 1996-09-27 2000-10-17 Rodel Holdings, Inc. Composition and method for polishing a composite of silica and silicon nitride
US6204169B1 (en) * 1997-03-24 2001-03-20 Motorola Inc. Processing for polishing dissimilar conductive layers in a semiconductor device
US5922091A (en) * 1997-05-16 1999-07-13 National Science Council Of Republic Of China Chemical mechanical polishing slurry for metallic thin film
US6572449B2 (en) 1998-10-06 2003-06-03 Rodel Holdings, Inc. Dewatered CMP polishing compositions and methods for using same
US6241586B1 (en) 1998-10-06 2001-06-05 Rodel Holdings Inc. CMP polishing slurry dewatering and reconstitution
US6245690B1 (en) * 1998-11-04 2001-06-12 Applied Materials, Inc. Method of improving moisture resistance of low dielectric constant films
WO2001019935A1 (en) * 1999-09-15 2001-03-22 Rodel Holdings, Inc. Slurry for forming insoluble silicate during chemical-mechanical polishing
US6435944B1 (en) 1999-10-27 2002-08-20 Applied Materials, Inc. CMP slurry for planarizing metals
US6194366B1 (en) 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6723691B2 (en) 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6432826B1 (en) 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
US6638143B2 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Ion exchange materials for chemical mechanical polishing
JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
US6451697B1 (en) 2000-04-06 2002-09-17 Applied Materials, Inc. Method for abrasive-free metal CMP in passivation domain
US6447375B2 (en) 2000-04-19 2002-09-10 Rodel Holdings Inc. Polishing method using a reconstituted dry particulate polishing composition
US6409781B1 (en) 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
US6858540B2 (en) 2000-05-11 2005-02-22 Applied Materials, Inc. Selective removal of tantalum-containing barrier layer during metal CMP
US6653242B1 (en) 2000-06-30 2003-11-25 Applied Materials, Inc. Solution to metal re-deposition during substrate planarization
JP3837277B2 (ja) 2000-06-30 2006-10-25 株式会社東芝 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法
US6872329B2 (en) 2000-07-28 2005-03-29 Applied Materials, Inc. Chemical mechanical polishing composition and process
US7220322B1 (en) 2000-08-24 2007-05-22 Applied Materials, Inc. Cu CMP polishing pad cleaning
US6569349B1 (en) 2000-10-23 2003-05-27 Applied Materials Inc. Additives to CMP slurry to polish dielectric films
US6524167B1 (en) 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US6709316B1 (en) 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
US20020068454A1 (en) * 2000-12-01 2002-06-06 Applied Materials, Inc. Method and composition for the removal of residual materials during substrate planarization
US7012025B2 (en) 2001-01-05 2006-03-14 Applied Materials Inc. Tantalum removal during chemical mechanical polishing
US6676718B2 (en) 2001-01-12 2004-01-13 Rodel Holdings, Inc. Polishing of semiconductor substrates
US7008554B2 (en) 2001-07-13 2006-03-07 Applied Materials, Inc. Dual reduced agents for barrier removal in chemical mechanical polishing
US7104869B2 (en) 2001-07-13 2006-09-12 Applied Materials, Inc. Barrier removal at low polish pressure
US6821881B2 (en) 2001-07-25 2004-11-23 Applied Materials, Inc. Method for chemical mechanical polishing of semiconductor substrates
JP2003100672A (ja) * 2001-09-21 2003-04-04 Rodel Nitta Co 研磨用スラリー
US6705926B2 (en) * 2001-10-24 2004-03-16 Cabot Microelectronics Corporation Boron-containing polishing system and method
KR20030035637A (ko) * 2001-11-01 2003-05-09 제일모직주식회사 구리배선 연마용 ｃｍｐ 슬러리
US20030209523A1 (en) * 2002-05-09 2003-11-13 Applied Materials, Inc. Planarization by chemical polishing for ULSI applications
TWI295950B (en) 2002-10-03 2008-04-21 Applied Materials Inc Method for reducing delamination during chemical mechanical polishing
US7141155B2 (en) * 2003-02-18 2006-11-28 Parker-Hannifin Corporation Polishing article for electro-chemical mechanical polishing
US20050252547A1 (en) * 2004-05-11 2005-11-17 Applied Materials, Inc. Methods and apparatus for liquid chemical delivery
US7210988B2 (en) * 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
TW200720493A (en) * 2005-10-31 2007-06-01 Applied Materials Inc Electrochemical method for ecmp polishing pad conditioning
US20070158207A1 (en) * 2006-01-06 2007-07-12 Applied Materials, Inc. Methods for electrochemical processing with pre-biased cells
US20070227902A1 (en) * 2006-03-29 2007-10-04 Applied Materials, Inc. Removal profile tuning by adjusting conditioning sweep profile on a conductive pad
WO2017147891A1 (en) * 2016-03-04 2017-09-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a semiconductor substrate

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4954142A (en) * 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US4959113C1 (en) * 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
CA2027029A1 (en) * 1989-10-13 1991-04-14 Christopher B. Guay Oral compositions containing monoperoxy acids
JPH03242352A (ja) * 1990-02-20 1991-10-29 Nippon Sheet Glass Co Ltd 硬脆材料の洗浄方法
US5244534A (en) * 1992-01-24 1993-09-14 Micron Technology, Inc. Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5382272A (en) * 1993-09-03 1995-01-17 Rodel, Inc. Activated polishing compositions
WO1995024054A1 (en) * 1994-03-01 1995-09-08 Rodel, Inc. Improved compositions and methods for polishing
US6046110A (en) * 1995-06-08 2000-04-04 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing a semiconductor device

Also Published As

Publication number Publication date
US5756398A (en) 1998-05-26
KR20000076305A (ko) 2000-12-26
EP0985059A1 (de) 2000-03-15
EP0985059B1 (de) 2002-11-06
DE69809228D1 (de) 2002-12-12
WO1998041671A1 (en) 1998-09-24
JP2001516383A (ja) 2001-09-25
EP0985059A4 (de) 2001-05-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee