DE69800382D1 - Elektronenemissionsvorrichtung und Anzeigevorrichtung unter Verwendung derselben - Google Patents

Elektronenemissionsvorrichtung und Anzeigevorrichtung unter Verwendung derselben

Info

Publication number
DE69800382D1
DE69800382D1 DE69800382T DE69800382T DE69800382D1 DE 69800382 D1 DE69800382 D1 DE 69800382D1 DE 69800382 T DE69800382 T DE 69800382T DE 69800382 T DE69800382 T DE 69800382T DE 69800382 D1 DE69800382 D1 DE 69800382D1
Authority
DE
Germany
Prior art keywords
same
electron emission
display device
emission device
display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69800382T
Other languages
English (en)
Other versions
DE69800382T2 (de
Inventor
Shingo Iwasaki
Kiyohide Ogasawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Publication of DE69800382D1 publication Critical patent/DE69800382D1/de
Application granted granted Critical
Publication of DE69800382T2 publication Critical patent/DE69800382T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of Metal-Insulator-Metal [MIM] type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
DE69800382T 1997-03-04 1998-03-03 Elektronenemissionsvorrichtung und Anzeigevorrichtung unter Verwendung derselben Expired - Fee Related DE69800382T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4945397 1997-03-04
JP13412397A JPH10308165A (ja) 1997-03-04 1997-05-23 電子放出素子及びこれを用いた表示装置

Publications (2)

Publication Number Publication Date
DE69800382D1 true DE69800382D1 (de) 2000-12-14
DE69800382T2 DE69800382T2 (de) 2001-06-07

Family

ID=26389848

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69800382T Expired - Fee Related DE69800382T2 (de) 1997-03-04 1998-03-03 Elektronenemissionsvorrichtung und Anzeigevorrichtung unter Verwendung derselben

Country Status (4)

Country Link
US (1) US5962959A (de)
EP (1) EP0863532B1 (de)
JP (1) JPH10308165A (de)
DE (1) DE69800382T2 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3724915B2 (ja) * 1997-05-15 2005-12-07 パイオニア株式会社 電子放出素子及びこれを用いた表示装置
JPH10321123A (ja) * 1997-05-15 1998-12-04 Pioneer Electron Corp 電子放出素子及びこれを用いた表示装置
JPH1167065A (ja) * 1997-08-08 1999-03-09 Pioneer Electron Corp 電子放出素子及びこれを用いた表示装置
US6400070B1 (en) * 1997-08-08 2002-06-04 Pioneer Electronic Corporation Electron emission device and display device using the same
EP0926698A3 (de) * 1997-12-25 2001-10-17 Pioneer Electronic Corporation Flacher Bildschirm mit Elektronenemittern
US6351254B2 (en) * 1998-07-06 2002-02-26 The Regents Of The University Of California Junction-based field emission structure for field emission display
JP3765671B2 (ja) * 1998-08-10 2006-04-12 パイオニア株式会社 電子放出素子及びこれを用いた電子放出表示装置
TW465122B (en) 1999-12-15 2001-11-21 Semiconductor Energy Lab Light-emitting device
US6989631B2 (en) * 2001-06-08 2006-01-24 Sony Corporation Carbon cathode of a field emission display with in-laid isolation barrier and support
US6617774B1 (en) * 2000-04-10 2003-09-09 Hitachi, Ltd. Thin-film electron emitter device having multi-layered electron emission areas
CN1630928A (zh) * 2000-09-07 2005-06-22 松下电器产业株式会社 薄膜的制造方法及带有该薄膜的灯泡
JP2002203499A (ja) * 2000-12-28 2002-07-19 Pioneer Electronic Corp 電子放出素子フラットパネル表示装置
US7002290B2 (en) * 2001-06-08 2006-02-21 Sony Corporation Carbon cathode of a field emission display with integrated isolation barrier and support on substrate
US6682382B2 (en) * 2001-06-08 2004-01-27 Sony Corporation Method for making wires with a specific cross section for a field emission display
US6756730B2 (en) * 2001-06-08 2004-06-29 Sony Corporation Field emission display utilizing a cathode frame-type gate and anode with alignment method
US7476925B2 (en) 2001-08-30 2009-01-13 Micron Technology, Inc. Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interploy insulators
JP4019690B2 (ja) * 2001-11-02 2007-12-12 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
US6873118B2 (en) * 2002-04-16 2005-03-29 Sony Corporation Field emission cathode structure using perforated gate
US6791278B2 (en) * 2002-04-16 2004-09-14 Sony Corporation Field emission display using line cathode structure
US6747416B2 (en) * 2002-04-16 2004-06-08 Sony Corporation Field emission display with deflecting MEMS electrodes
US7012582B2 (en) * 2002-11-27 2006-03-14 Sony Corporation Spacer-less field emission display
JP4203954B2 (ja) * 2002-12-26 2009-01-07 株式会社日立製作所 画像表示装置
US20040145299A1 (en) * 2003-01-24 2004-07-29 Sony Corporation Line patterned gate structure for a field emission display
US7071629B2 (en) * 2003-03-31 2006-07-04 Sony Corporation Image display device incorporating driver circuits on active substrate and other methods to reduce interconnects
US20040189552A1 (en) * 2003-03-31 2004-09-30 Sony Corporation Image display device incorporating driver circuits on active substrate to reduce interconnects
US7250720B2 (en) 2003-04-25 2007-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device
JP4543716B2 (ja) * 2004-03-23 2010-09-15 パナソニック電工株式会社 電子源およびその製造方法
US7687409B2 (en) 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7572695B2 (en) 2005-05-27 2009-08-11 Micron Technology, Inc. Hafnium titanium oxide films
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
JP4303308B2 (ja) 2007-11-20 2009-07-29 シャープ株式会社 電子放出素子、電子放出装置、自発光デバイス、画像表示装置、送風装置、冷却装置、帯電装置、画像形成装置、電子線硬化装置、および電子放出素子の製造方法
JP4314307B1 (ja) * 2008-02-21 2009-08-12 シャープ株式会社 熱交換装置
US8299700B2 (en) 2009-02-05 2012-10-30 Sharp Kabushiki Kaisha Electron emitting element having an electron acceleration layer, electron emitting device, light emitting device, image display device, cooling device, and charging device
CN101814405B (zh) 2009-02-24 2012-04-25 夏普株式会社 电子发射元件及其制造方法、使用电子发射元件的各装置
JP4777448B2 (ja) 2009-05-19 2011-09-21 シャープ株式会社 電子放出素子、電子放出装置、自発光デバイス、画像表示装置、送風装置、冷却装置、帯電装置、画像形成装置、及び電子線硬化装置
JP5073721B2 (ja) * 2009-05-19 2012-11-14 シャープ株式会社 電子放出素子、電子放出装置、自発光デバイス、画像表示装置、送風装置、冷却装置、帯電装置、画像形成装置、電子線硬化装置、電子放出素子の製造方法
JP4932873B2 (ja) 2009-05-19 2012-05-16 シャープ株式会社 自発光素子、自発光装置、画像表示装置、自発光素子駆動方法、および自発光素子の製造方法
JP4732534B2 (ja) 2009-05-19 2011-07-27 シャープ株式会社 電子放出素子、電子放出装置、帯電装置、画像形成装置、電子線硬化装置、自発光デバイス、画像表示装置、送風装置、冷却装置
JP4732533B2 (ja) 2009-05-19 2011-07-27 シャープ株式会社 電子放出素子及びその製造方法、並びに、電子放出装置、帯電装置、画像形成装置、電子線硬化装置、自発光デバイス、画像表示装置、送風装置、冷却装置
CN101930884B (zh) 2009-06-25 2012-04-18 夏普株式会社 电子发射元件及其制造方法、电子发射装置、自发光设备、图像显示装置
JP4927152B2 (ja) * 2009-11-09 2012-05-09 シャープ株式会社 熱交換装置
JP4880740B2 (ja) 2009-12-01 2012-02-22 シャープ株式会社 電子放出素子及びその製造方法、並びに、電子放出装置、帯電装置、画像形成装置、電子線硬化装置、自発光デバイス、画像表示装置、送風装置、冷却装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1252818B (de) * 1962-03-22 1900-01-01
US3535598A (en) * 1969-05-23 1970-10-20 Raytheon Co Solid state tunnel cathode emitter having an improved thin film insulating barrier
FR2629636B1 (fr) * 1988-04-05 1990-11-16 Thomson Csf Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant
JPH05182609A (ja) * 1991-12-27 1993-07-23 Sharp Corp 画像表示装置
US5390072A (en) * 1992-09-17 1995-02-14 Research Foundation Of State University Of New York Thin film capacitors
JP3390495B2 (ja) * 1993-08-30 2003-03-24 株式会社日立製作所 Ｍｉｍ構造素子およびその製造方法
US5646474A (en) * 1995-03-27 1997-07-08 Wayne State University Boron nitride cold cathode
JP3281533B2 (ja) * 1996-03-26 2002-05-13 パイオニア株式会社 冷電子放出表示装置及び半導体冷電子放出素子

Also Published As

Publication number Publication date
EP0863532B1 (de) 2000-11-08
US5962959A (en) 1999-10-05
EP0863532A1 (de) 1998-09-09
JPH10308165A (ja) 1998-11-17
DE69800382T2 (de) 2001-06-07

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee