DE69723252D1 - Multibiteinzelzellenspeicher mit spitz zulaufendem kontakt - Google Patents

Multibiteinzelzellenspeicher mit spitz zulaufendem kontakt

Info

Publication number
DE69723252D1
DE69723252D1 DE69723252T DE69723252T DE69723252D1 DE 69723252 D1 DE69723252 D1 DE 69723252D1 DE 69723252 T DE69723252 T DE 69723252T DE 69723252 T DE69723252 T DE 69723252T DE 69723252 D1 DE69723252 D1 DE 69723252D1
Authority
DE
Germany
Prior art keywords
multibite
single cell
cell storage
pointed contact
pointed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69723252T
Other languages
English (en)
Other versions
DE69723252T2 (de
Inventor
R Ovshinsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of DE69723252D1 publication Critical patent/DE69723252D1/de
Publication of DE69723252T2 publication Critical patent/DE69723252T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/008—Write by generating heat in the surroundings of the memory material, e.g. thermowrite
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.
DE69723252T 1996-04-19 1997-04-17 Multibiteinzelzellenspeicher mit spitz zulaufendem kontakt Expired - Fee Related DE69723252T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US635442 1996-04-19
US08/635,442 US5687112A (en) 1996-04-19 1996-04-19 Multibit single cell memory element having tapered contact
PCT/US1997/006538 WO1997040499A1 (en) 1996-04-19 1997-04-17 Multibit single cell memory having tapered contact

Publications (2)

Publication Number Publication Date
DE69723252D1 true DE69723252D1 (de) 2003-08-07
DE69723252T2 DE69723252T2 (de) 2004-05-27

Family

ID=24547807

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69723252T Expired - Fee Related DE69723252T2 (de) 1996-04-19 1997-04-17 Multibiteinzelzellenspeicher mit spitz zulaufendem kontakt

Country Status (9)

Country Link
US (2) US5687112A (de)
EP (1) EP0894323B1 (de)
JP (1) JP4091984B2 (de)
KR (1) KR100397929B1 (de)
AU (1) AU2677297A (de)
CA (1) CA2250504C (de)
DE (1) DE69723252T2 (de)
TW (1) TW328590B (de)
WO (1) WO1997040499A1 (de)

Families Citing this family (422)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5831276A (en) 1995-06-07 1998-11-03 Micron Technology, Inc. Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
US5879955A (en) * 1995-06-07 1999-03-09 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
US6420725B1 (en) * 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
US6025220A (en) 1996-06-18 2000-02-15 Micron Technology, Inc. Method of forming a polysilicon diode and devices incorporating such diode
US6337266B1 (en) * 1996-07-22 2002-01-08 Micron Technology, Inc. Small electrode for chalcogenide memories
US5998244A (en) * 1996-08-22 1999-12-07 Micron Technology, Inc. Memory cell incorporating a chalcogenide element and method of making same
US6147395A (en) * 1996-10-02 2000-11-14 Micron Technology, Inc. Method for fabricating a small area of contact between electrodes
US7935951B2 (en) * 1996-10-28 2011-05-03 Ovonyx, Inc. Composite chalcogenide materials and devices
US6087674A (en) * 1996-10-28 2000-07-11 Energy Conversion Devices, Inc. Memory element with memory material comprising phase-change material and dielectric material
US6015977A (en) * 1997-01-28 2000-01-18 Micron Technology, Inc. Integrated circuit memory cell having a small active area and method of forming same
US5952671A (en) 1997-05-09 1999-09-14 Micron Technology, Inc. Small electrode for a chalcogenide switching device and method for fabricating same
US6087689A (en) * 1997-06-16 2000-07-11 Micron Technology, Inc. Memory cell having a reduced active area and a memory array incorporating the same
US6969866B1 (en) * 1997-10-01 2005-11-29 Ovonyx, Inc. Electrically programmable memory element with improved contacts
US6218293B1 (en) 1998-11-13 2001-04-17 Micron Technology, Inc. Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride
US6352944B1 (en) 1999-02-10 2002-03-05 Micron Technology, Inc. Method of depositing an aluminum nitride comprising layer over a semiconductor substrate
US6943365B2 (en) * 1999-03-25 2005-09-13 Ovonyx, Inc. Electrically programmable memory element with reduced area of contact and method for making same
CN1210819C (zh) * 1999-03-25 2005-07-13 能源变换设备有限公司 带有改进的接触点的电可编程存储器元件
US6314014B1 (en) 1999-12-16 2001-11-06 Ovonyx, Inc. Programmable resistance memory arrays with reference cells
US6563156B2 (en) 2001-03-15 2003-05-13 Micron Technology, Inc. Memory elements and methods for making same
US6440837B1 (en) 2000-07-14 2002-08-27 Micron Technology, Inc. Method of forming a contact structure in a semiconductor device
WO2002009206A1 (en) * 2000-07-22 2002-01-31 Ovonyx, Inc. Electrically programmable memory element
US6881994B2 (en) * 2000-08-14 2005-04-19 Matrix Semiconductor, Inc. Monolithic three dimensional array of charge storage devices containing a planarized surface
US6569705B2 (en) * 2000-12-21 2003-05-27 Intel Corporation Metal structure for a phase-change memory device
US6638820B2 (en) 2001-02-08 2003-10-28 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices
US6727192B2 (en) 2001-03-01 2004-04-27 Micron Technology, Inc. Methods of metal doping a chalcogenide material
US6734455B2 (en) 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US6897514B2 (en) * 2001-03-28 2005-05-24 Matrix Semiconductor, Inc. Two mask floating gate EEPROM and method of making
US7102150B2 (en) 2001-05-11 2006-09-05 Harshfield Steven T PCRAM memory cell and method of making same
US6570784B2 (en) * 2001-06-29 2003-05-27 Ovonyx, Inc. Programming a phase-change material memory
US6951805B2 (en) 2001-08-01 2005-10-04 Micron Technology, Inc. Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry
US6841813B2 (en) * 2001-08-13 2005-01-11 Matrix Semiconductor, Inc. TFT mask ROM and method for making same
US6593624B2 (en) 2001-09-25 2003-07-15 Matrix Semiconductor, Inc. Thin film transistors with vertically offset drain regions
US6737312B2 (en) 2001-08-27 2004-05-18 Micron Technology, Inc. Method of fabricating dual PCRAM cells sharing a common electrode
US6881623B2 (en) 2001-08-29 2005-04-19 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device
US6784018B2 (en) 2001-08-29 2004-08-31 Micron Technology, Inc. Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry
US6955940B2 (en) 2001-08-29 2005-10-18 Micron Technology, Inc. Method of forming chalcogenide comprising devices
US20030047765A1 (en) 2001-08-30 2003-03-13 Campbell Kristy A. Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
EP2112659A1 (de) 2001-09-01 2009-10-28 Energy Convertion Devices, Inc. Verbesserte Datenspeicherung in optischen Datenspeicher- und -abrufsystemen mit blauen Lasern und/oder Plasmonlinsen
US6800563B2 (en) * 2001-10-11 2004-10-05 Ovonyx, Inc. Forming tapered lower electrode phase-change memories
US6815818B2 (en) 2001-11-19 2004-11-09 Micron Technology, Inc. Electrode structure for use in an integrated circuit
US6791859B2 (en) 2001-11-20 2004-09-14 Micron Technology, Inc. Complementary bit PCRAM sense amplifier and method of operation
AU2002354082A1 (en) 2001-12-12 2003-06-23 Matsushita Electric Industrial Co., Ltd. Nonvolatile memory
US6545903B1 (en) 2001-12-17 2003-04-08 Texas Instruments Incorporated Self-aligned resistive plugs for forming memory cell with phase change material
US6873538B2 (en) 2001-12-20 2005-03-29 Micron Technology, Inc. Programmable conductor random access memory and a method for writing thereto
US6625054B2 (en) * 2001-12-28 2003-09-23 Intel Corporation Method and apparatus to program a phase change memory
US6909656B2 (en) 2002-01-04 2005-06-21 Micron Technology, Inc. PCRAM rewrite prevention
DE60220245D1 (de) * 2002-01-17 2007-07-05 St Microelectronics Srl Integriertes Widerstandselement, Phasenwechsel Speicherelement mit solchem Widerstandselement, und Verfahren zu seiner Herstellung
US20030143782A1 (en) 2002-01-31 2003-07-31 Gilton Terry L. Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures
US6867064B2 (en) 2002-02-15 2005-03-15 Micron Technology, Inc. Method to alter chalcogenide glass for improved switching characteristics
US6791885B2 (en) 2002-02-19 2004-09-14 Micron Technology, Inc. Programmable conductor random access memory and method for sensing same
US6809362B2 (en) 2002-02-20 2004-10-26 Micron Technology, Inc. Multiple data state memory cell
US6891749B2 (en) 2002-02-20 2005-05-10 Micron Technology, Inc. Resistance variable ‘on ’ memory
US7151273B2 (en) 2002-02-20 2006-12-19 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory
US7087919B2 (en) 2002-02-20 2006-08-08 Micron Technology, Inc. Layered resistance variable memory device and method of fabrication
US6937528B2 (en) 2002-03-05 2005-08-30 Micron Technology, Inc. Variable resistance memory and method for sensing same
US6853049B2 (en) 2002-03-13 2005-02-08 Matrix Semiconductor, Inc. Silicide-silicon oxide-semiconductor antifuse device and method of making
US6849868B2 (en) 2002-03-14 2005-02-01 Micron Technology, Inc. Methods and apparatus for resistance variable material cells
US6579760B1 (en) 2002-03-28 2003-06-17 Macronix International Co., Ltd. Self-aligned, programmable phase change memory
US6670628B2 (en) * 2002-04-04 2003-12-30 Hewlett-Packard Company, L.P. Low heat loss and small contact area composite electrode for a phase change media memory device
US6855975B2 (en) 2002-04-10 2005-02-15 Micron Technology, Inc. Thin film diode integrated with chalcogenide memory cell
US6864500B2 (en) 2002-04-10 2005-03-08 Micron Technology, Inc. Programmable conductor memory cell structure
US6858482B2 (en) 2002-04-10 2005-02-22 Micron Technology, Inc. Method of manufacture of programmable switching circuits and memory cells employing a glass layer
US6825135B2 (en) 2002-06-06 2004-11-30 Micron Technology, Inc. Elimination of dendrite formation during metal/chalcogenide glass deposition
US6890790B2 (en) 2002-06-06 2005-05-10 Micron Technology, Inc. Co-sputter deposition of metal-doped chalcogenides
US7062476B2 (en) * 2002-06-17 2006-06-13 The Boeing Company Student neural network
US6737675B2 (en) 2002-06-27 2004-05-18 Matrix Semiconductor, Inc. High density 3D rail stack arrays
US7015494B2 (en) 2002-07-10 2006-03-21 Micron Technology, Inc. Assemblies displaying differential negative resistance
JP4027282B2 (ja) * 2002-07-10 2007-12-26 キヤノン株式会社 インクジェット記録ヘッド
AU2003241844A1 (en) 2002-07-11 2004-02-02 Matsushita Electric Industrial Co., Ltd. Nonvolatile memory and its manufacturing method
TWI233204B (en) * 2002-07-26 2005-05-21 Infineon Technologies Ag Nonvolatile memory element and associated production methods and memory element arrangements
US6768665B2 (en) * 2002-08-05 2004-07-27 Intel Corporation Refreshing memory cells of a phase change material memory device
US7209378B2 (en) 2002-08-08 2007-04-24 Micron Technology, Inc. Columnar 1T-N memory cell structure
US7129531B2 (en) * 2002-08-08 2006-10-31 Ovonyx, Inc. Programmable resistance memory element with titanium rich adhesion layer
US6864503B2 (en) 2002-08-09 2005-03-08 Macronix International Co., Ltd. Spacer chalcogenide memory method and device
US6850432B2 (en) 2002-08-20 2005-02-01 Macronix International Co., Ltd. Laser programmable electrically readable phase-change memory method and device
US7018863B2 (en) 2002-08-22 2006-03-28 Micron Technology, Inc. Method of manufacture of a resistance variable memory cell
US6768666B2 (en) * 2002-08-23 2004-07-27 Energy Conversion Devices, Inc. Phase angle controlled stationary elements for wavefront engineering of electromagnetic radiation
US6985373B2 (en) * 2002-08-23 2006-01-10 Energy Conversion Devices, Inc. Binary beam steering device
US6864521B2 (en) 2002-08-29 2005-03-08 Micron Technology, Inc. Method to control silver concentration in a resistance variable memory element
US6867114B2 (en) 2002-08-29 2005-03-15 Micron Technology Inc. Methods to form a memory cell with metal-rich metal chalcogenide
US6856002B2 (en) 2002-08-29 2005-02-15 Micron Technology, Inc. Graded GexSe100-x concentration in PCRAM
US6831019B1 (en) 2002-08-29 2004-12-14 Micron Technology, Inc. Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
US7294527B2 (en) 2002-08-29 2007-11-13 Micron Technology Inc. Method of forming a memory cell
US7364644B2 (en) 2002-08-29 2008-04-29 Micron Technology, Inc. Silver selenide film stoichiometry and morphology control in sputter deposition
US6867996B2 (en) 2002-08-29 2005-03-15 Micron Technology, Inc. Single-polarity programmable resistance-variable memory element
US7010644B2 (en) 2002-08-29 2006-03-07 Micron Technology, Inc. Software refreshed memory device and method
US7163837B2 (en) * 2002-08-29 2007-01-16 Micron Technology, Inc. Method of forming a resistance variable memory element
US6985377B2 (en) 2002-10-15 2006-01-10 Nanochip, Inc. Phase change media for high density data storage
KR100481866B1 (ko) * 2002-11-01 2005-04-11 삼성전자주식회사 상변환 기억소자 및 그 제조방법
KR100481865B1 (ko) * 2002-11-01 2005-04-11 삼성전자주식회사 상변환 기억소자 및 그 제조방법
US7205562B2 (en) * 2002-12-13 2007-04-17 Intel Corporation Phase change memory and method therefor
US7227170B2 (en) * 2003-03-10 2007-06-05 Energy Conversion Devices, Inc. Multiple bit chalcogenide storage device
US6813178B2 (en) 2003-03-12 2004-11-02 Micron Technology, Inc. Chalcogenide glass constant current device, and its method of fabrication and operation
US7022579B2 (en) 2003-03-14 2006-04-04 Micron Technology, Inc. Method for filling via with metal
US20040197947A1 (en) * 2003-04-07 2004-10-07 Fricke Peter J. Memory-cell filament electrodes and methods
US7050327B2 (en) 2003-04-10 2006-05-23 Micron Technology, Inc. Differential negative resistance memory
KR100491978B1 (ko) * 2003-04-12 2005-05-27 한국전자통신연구원 저 전력 동작이 가능한 상변화 메모리 소자 및 그 제조 방법
US7067865B2 (en) * 2003-06-06 2006-06-27 Macronix International Co., Ltd. High density chalcogenide memory cells
US7180767B2 (en) * 2003-06-18 2007-02-20 Macronix International Co., Ltd. Multi-level memory device and methods for programming and reading the same
US6930909B2 (en) * 2003-06-25 2005-08-16 Micron Technology, Inc. Memory device and methods of controlling resistance variation and resistance profile drift
US6961277B2 (en) 2003-07-08 2005-11-01 Micron Technology, Inc. Method of refreshing a PCRAM memory device
US7061004B2 (en) 2003-07-21 2006-06-13 Micron Technology, Inc. Resistance variable memory elements and methods of formation
US7106120B1 (en) 2003-07-22 2006-09-12 Sharp Laboratories Of America, Inc. PCMO resistor trimmer
US7471552B2 (en) * 2003-08-04 2008-12-30 Ovonyx, Inc. Analog phase change memory
US7012273B2 (en) 2003-08-14 2006-03-14 Silicon Storage Technology, Inc. Phase change memory device employing thermal-electrical contacts with narrowing electrical current paths
DE10340405B3 (de) * 2003-09-02 2004-12-23 Infineon Technologies Ag Integrierter Halbleiterspeicher
US6927410B2 (en) * 2003-09-04 2005-08-09 Silicon Storage Technology, Inc. Memory device with discrete layers of phase change memory material
US6815704B1 (en) 2003-09-04 2004-11-09 Silicon Storage Technology, Inc. Phase change memory device employing thermally insulating voids
KR100505709B1 (ko) * 2003-09-08 2005-08-03 삼성전자주식회사 상 변화 메모리 장치의 파이어링 방법 및 효율적인파이어링을 수행할 수 있는 상 변화 메모리 장치
US6903361B2 (en) 2003-09-17 2005-06-07 Micron Technology, Inc. Non-volatile memory structure
US7057923B2 (en) * 2003-12-10 2006-06-06 International Buisness Machines Corp. Field emission phase change diode memory
US7153721B2 (en) * 2004-01-28 2006-12-26 Micron Technology, Inc. Resistance variable memory elements based on polarized silver-selenide network growth
US7105864B2 (en) 2004-01-29 2006-09-12 Micron Technology, Inc. Non-volatile zero field splitting resonance memory
US6936840B2 (en) * 2004-01-30 2005-08-30 International Business Machines Corporation Phase-change memory cell and method of fabricating the phase-change memory cell
DE102004007633B4 (de) * 2004-02-17 2010-10-14 Qimonda Ag Speicherzelle, Halbleiter-Speicherbauelement und Verfahren zur Herstellung einer Speicherzelle
KR100733147B1 (ko) * 2004-02-25 2007-06-27 삼성전자주식회사 상변화 메모리 장치 및 그 제조 방법
US7583551B2 (en) 2004-03-10 2009-09-01 Micron Technology, Inc. Power management control and controlling memory refresh operations
US7098068B2 (en) 2004-03-10 2006-08-29 Micron Technology, Inc. Method of forming a chalcogenide material containing device
US20050232061A1 (en) * 2004-04-16 2005-10-20 Rust Thomas F Systems for writing and reading highly resolved domains for high density data storage
US7301887B2 (en) 2004-04-16 2007-11-27 Nanochip, Inc. Methods for erasing bit cells in a high density data storage device
US7379412B2 (en) 2004-04-16 2008-05-27 Nanochip, Inc. Methods for writing and reading highly resolved domains for high density data storage
KR100609699B1 (ko) 2004-07-15 2006-08-08 한국전자통신연구원 급격한 금속-절연체 전이 반도체 물질을 이용한 2단자반도체 소자 및 그 제조 방법
US7354793B2 (en) 2004-08-12 2008-04-08 Micron Technology, Inc. Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element
US7190048B2 (en) 2004-07-19 2007-03-13 Micron Technology, Inc. Resistance variable memory device and method of fabrication
US7326950B2 (en) 2004-07-19 2008-02-05 Micron Technology, Inc. Memory device with switching glass layer
US7084691B2 (en) * 2004-07-21 2006-08-01 Sharp Laboratories Of America, Inc. Mono-polarity switchable PCMO resistor trimmer
US7220982B2 (en) * 2004-07-27 2007-05-22 Micron Technology, Inc. Amorphous carbon-based non-volatile memory
US7365411B2 (en) 2004-08-12 2008-04-29 Micron Technology, Inc. Resistance variable memory with temperature tolerant materials
US7288784B2 (en) * 2004-08-19 2007-10-30 Micron Technology, Inc. Structure for amorphous carbon based non-volatile memory
US7151688B2 (en) 2004-09-01 2006-12-19 Micron Technology, Inc. Sensing of resistance variable memory devices
US7238959B2 (en) * 2004-11-01 2007-07-03 Silicon Storage Technology, Inc. Phase change memory device employing thermally insulating voids and sloped trench, and a method of making same
US7351613B2 (en) * 2004-11-04 2008-04-01 Silicon Storage Technology, Inc. Method of trimming semiconductor elements with electrical resistance feedback
US7608503B2 (en) 2004-11-22 2009-10-27 Macronix International Co., Ltd. Side wall active pin memory and manufacturing method
TW200633193A (en) * 2004-12-02 2006-09-16 Koninkl Philips Electronics Nv Non-volatile memory
US7220983B2 (en) * 2004-12-09 2007-05-22 Macronix International Co., Ltd. Self-aligned small contact phase-change memory method and device
US7374174B2 (en) * 2004-12-22 2008-05-20 Micron Technology, Inc. Small electrode for resistance variable devices
US20060131555A1 (en) * 2004-12-22 2006-06-22 Micron Technology, Inc. Resistance variable devices with controllable channels
US7709334B2 (en) 2005-12-09 2010-05-04 Macronix International Co., Ltd. Stacked non-volatile memory device and methods for fabricating the same
TWI261915B (en) * 2005-01-07 2006-09-11 Ind Tech Res Inst Phase change memory and fabricating method thereof
US7307268B2 (en) 2005-01-19 2007-12-11 Sandisk Corporation Structure and method for biasing phase change memory array for reliable writing
US7259038B2 (en) * 2005-01-19 2007-08-21 Sandisk Corporation Forming nonvolatile phase change memory cell having a reduced thermal contact area
KR100707182B1 (ko) * 2005-02-18 2007-04-13 삼성전자주식회사 상전이 메모리 소자 및 제조방법
US7317200B2 (en) 2005-02-23 2008-01-08 Micron Technology, Inc. SnSe-based limited reprogrammable cell
US8193606B2 (en) * 2005-02-28 2012-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a memory element
US7166533B2 (en) * 2005-04-08 2007-01-23 Infineon Technologies, Ag Phase change memory cell defined by a pattern shrink material process
US7269044B2 (en) 2005-04-22 2007-09-11 Micron Technology, Inc. Method and apparatus for accessing a memory array
US7709289B2 (en) 2005-04-22 2010-05-04 Micron Technology, Inc. Memory elements having patterned electrodes and method of forming the same
US7427770B2 (en) 2005-04-22 2008-09-23 Micron Technology, Inc. Memory array for increased bit density
US20060250836A1 (en) * 2005-05-09 2006-11-09 Matrix Semiconductor, Inc. Rewriteable memory cell comprising a diode and a resistance-switching material
US7812404B2 (en) * 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
US7269079B2 (en) 2005-05-16 2007-09-11 Micron Technology, Inc. Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory
US8531863B2 (en) * 2005-05-20 2013-09-10 Adesto Technologies Corporation Method for operating an integrated circuit having a resistivity changing memory cell
US20060273298A1 (en) * 2005-06-02 2006-12-07 Matrix Semiconductor, Inc. Rewriteable memory cell comprising a transistor and resistance-switching material in series
US8237140B2 (en) * 2005-06-17 2012-08-07 Macronix International Co., Ltd. Self-aligned, embedded phase change RAM
US7321130B2 (en) 2005-06-17 2008-01-22 Macronix International Co., Ltd. Thin film fuse phase change RAM and manufacturing method
US7514367B2 (en) * 2005-06-17 2009-04-07 Macronix International Co., Ltd. Method for manufacturing a narrow structure on an integrated circuit
US7514288B2 (en) * 2005-06-17 2009-04-07 Macronix International Co., Ltd. Manufacturing methods for thin film fuse phase change ram
US7696503B2 (en) 2005-06-17 2010-04-13 Macronix International Co., Ltd. Multi-level memory cell having phase change element and asymmetrical thermal boundary
US7598512B2 (en) * 2005-06-17 2009-10-06 Macronix International Co., Ltd. Thin film fuse phase change cell with thermal isolation layer and manufacturing method
US7534647B2 (en) 2005-06-17 2009-05-19 Macronix International Co., Ltd. Damascene phase change RAM and manufacturing method
US7238994B2 (en) 2005-06-17 2007-07-03 Macronix International Co., Ltd. Thin film plate phase change ram circuit and manufacturing method
US7233520B2 (en) 2005-07-08 2007-06-19 Micron Technology, Inc. Process for erasing chalcogenide variable resistance memory bits
USRE47382E1 (en) 2005-07-18 2019-05-07 Xenogenic Development Limited Liability Company Back-to-back metal/semiconductor/metal (MSM) Schottky diode
US7446010B2 (en) * 2005-07-18 2008-11-04 Sharp Laboratories Of America, Inc. Metal/semiconductor/metal (MSM) back-to-back Schottky diode
US7274034B2 (en) 2005-08-01 2007-09-25 Micron Technology, Inc. Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US7317567B2 (en) 2005-08-02 2008-01-08 Micron Technology, Inc. Method and apparatus for providing color changing thin film material
US7332735B2 (en) 2005-08-02 2008-02-19 Micron Technology, Inc. Phase change memory cell and method of formation
US20070034850A1 (en) * 2005-08-09 2007-02-15 Ovonyx, Inc. Chalcogenide devices incorporating chalcogenide materials having reduced germanium or telluruim content
US7525117B2 (en) * 2005-08-09 2009-04-28 Ovonyx, Inc. Chalcogenide devices and materials having reduced germanium or telluruim content
US7579615B2 (en) 2005-08-09 2009-08-25 Micron Technology, Inc. Access transistor for memory device
US7767992B2 (en) * 2005-08-09 2010-08-03 Ovonyx, Inc. Multi-layer chalcogenide devices
US7304368B2 (en) 2005-08-11 2007-12-04 Micron Technology, Inc. Chalcogenide-based electrokinetic memory element and method of forming the same
US7521705B2 (en) * 2005-08-15 2009-04-21 Micron Technology, Inc. Reproducible resistance variable insulating memory devices having a shaped bottom electrode
US7251154B2 (en) 2005-08-15 2007-07-31 Micron Technology, Inc. Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
TWI273703B (en) * 2005-08-19 2007-02-11 Ind Tech Res Inst A manufacture method and structure for improving the characteristics of phase change memory
KR100676204B1 (ko) * 2005-08-25 2007-01-30 삼성전자주식회사 이이피롬 셀 트랜지스터
US7381982B2 (en) * 2005-08-26 2008-06-03 Macronix International Co., Ltd. Method for fabricating chalcogenide-applied memory
US7491962B2 (en) 2005-08-30 2009-02-17 Micron Technology, Inc. Resistance variable memory device with nanoparticle electrode and method of fabrication
US7277313B2 (en) 2005-08-31 2007-10-02 Micron Technology, Inc. Resistance variable memory element with threshold device and method of forming the same
KR100687750B1 (ko) 2005-09-07 2007-02-27 한국전자통신연구원 안티몬과 셀레늄 금속합금을 이용한 상변화형 메모리소자및 그 제조방법
US7390691B2 (en) * 2005-10-28 2008-06-24 Intel Corporation Increasing phase change memory column landing margin
US7397060B2 (en) * 2005-11-14 2008-07-08 Macronix International Co., Ltd. Pipe shaped phase change memory
US20070111429A1 (en) * 2005-11-14 2007-05-17 Macronix International Co., Ltd. Method of manufacturing a pipe shaped phase change memory
US7786460B2 (en) * 2005-11-15 2010-08-31 Macronix International Co., Ltd. Phase change memory device and manufacturing method
US7394088B2 (en) * 2005-11-15 2008-07-01 Macronix International Co., Ltd. Thermally contained/insulated phase change memory device and method (combined)
US7635855B2 (en) * 2005-11-15 2009-12-22 Macronix International Co., Ltd. I-shaped phase change memory cell
US7450411B2 (en) 2005-11-15 2008-11-11 Macronix International Co., Ltd. Phase change memory device and manufacturing method
US7414258B2 (en) 2005-11-16 2008-08-19 Macronix International Co., Ltd. Spacer electrode small pin phase change memory RAM and manufacturing method
US7829876B2 (en) * 2005-11-21 2010-11-09 Macronix International Co., Ltd. Vacuum cell thermal isolation for a phase change memory device
US7449710B2 (en) 2005-11-21 2008-11-11 Macronix International Co., Ltd. Vacuum jacket for phase change memory element
US7816661B2 (en) 2005-11-21 2010-10-19 Macronix International Co., Ltd. Air cell thermal isolation for a memory array formed of a programmable resistive material
US7507986B2 (en) 2005-11-21 2009-03-24 Macronix International Co., Ltd. Thermal isolation for an active-sidewall phase change memory cell
US7479649B2 (en) 2005-11-21 2009-01-20 Macronix International Co., Ltd. Vacuum jacketed electrode for phase change memory element
US7599217B2 (en) 2005-11-22 2009-10-06 Macronix International Co., Ltd. Memory cell device and manufacturing method
US7834338B2 (en) * 2005-11-23 2010-11-16 Sandisk 3D Llc Memory cell comprising nickel-cobalt oxide switching element
US7816659B2 (en) * 2005-11-23 2010-10-19 Sandisk 3D Llc Devices having reversible resistivity-switching metal oxide or nitride layer with added metal
US7459717B2 (en) * 2005-11-28 2008-12-02 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
US7688619B2 (en) 2005-11-28 2010-03-30 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
US7521364B2 (en) 2005-12-02 2009-04-21 Macronix Internation Co., Ltd. Surface topology improvement method for plug surface areas
US7605079B2 (en) * 2005-12-05 2009-10-20 Macronix International Co., Ltd. Manufacturing method for phase change RAM with electrode layer process
US7642539B2 (en) * 2005-12-13 2010-01-05 Macronix International Co., Ltd. Thin film fuse phase change cell with thermal isolation pad and manufacturing method
GB2433647B (en) 2005-12-20 2008-05-28 Univ Southampton Phase change memory materials, devices and methods
US7531825B2 (en) 2005-12-27 2009-05-12 Macronix International Co., Ltd. Method for forming self-aligned thermal isolation cell for a variable resistance memory array
US8062833B2 (en) * 2005-12-30 2011-11-22 Macronix International Co., Ltd. Chalcogenide layer etching method
KR100746224B1 (ko) * 2006-01-02 2007-08-03 삼성전자주식회사 멀티비트 셀들을 구비하는 상변화 기억소자들 및 그프로그램 방법들
JP5143415B2 (ja) * 2006-01-02 2013-02-13 三星電子株式会社 マルチビットセル及び直径が調節できるコンタクトを具備する相変化記憶素子、その製造方法及びそのプログラム方法
US7595218B2 (en) 2006-01-09 2009-09-29 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US7560337B2 (en) 2006-01-09 2009-07-14 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US20070158632A1 (en) * 2006-01-09 2007-07-12 Macronix International Co., Ltd. Method for Fabricating a Pillar-Shaped Phase Change Memory Element
US7741636B2 (en) * 2006-01-09 2010-06-22 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US7825396B2 (en) * 2006-01-11 2010-11-02 Macronix International Co., Ltd. Self-align planerized bottom electrode phase change memory and manufacturing method
US7432206B2 (en) 2006-01-24 2008-10-07 Macronix International Co., Ltd. Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram
US7456421B2 (en) * 2006-01-30 2008-11-25 Macronix International Co., Ltd. Vertical side wall active pin structures in a phase change memory and manufacturing methods
US7956358B2 (en) * 2006-02-07 2011-06-07 Macronix International Co., Ltd. I-shaped phase change memory cell with thermal isolation
US7910907B2 (en) * 2006-03-15 2011-03-22 Macronix International Co., Ltd. Manufacturing method for pipe-shaped electrode phase change memory
US7808810B2 (en) * 2006-03-31 2010-10-05 Sandisk 3D Llc Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse
US7829875B2 (en) * 2006-03-31 2010-11-09 Sandisk 3D Llc Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse
US7875871B2 (en) 2006-03-31 2011-01-25 Sandisk 3D Llc Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
US7554144B2 (en) * 2006-04-17 2009-06-30 Macronix International Co., Ltd. Memory device and manufacturing method
US7928421B2 (en) 2006-04-21 2011-04-19 Macronix International Co., Ltd. Phase change memory cell with vacuum spacer
US8129706B2 (en) * 2006-05-05 2012-03-06 Macronix International Co., Ltd. Structures and methods of a bistable resistive random access memory
US7608848B2 (en) * 2006-05-09 2009-10-27 Macronix International Co., Ltd. Bridge resistance random access memory device with a singular contact structure
US7649242B2 (en) * 2006-05-19 2010-01-19 Infineon Technologies Ag Programmable resistive memory cell with a programmable resistance layer
TWI297225B (en) * 2006-05-23 2008-05-21 Ind Tech Res Inst Phase change memory device and fabrications thereof
US7423300B2 (en) 2006-05-24 2008-09-09 Macronix International Co., Ltd. Single-mask phase change memory element
US7820997B2 (en) * 2006-05-30 2010-10-26 Macronix International Co., Ltd. Resistor random access memory cell with reduced active area and reduced contact areas
US7732800B2 (en) * 2006-05-30 2010-06-08 Macronix International Co., Ltd. Resistor random access memory cell with L-shaped electrode
US20110049454A1 (en) * 2006-06-23 2011-03-03 Motoyasu Terao Semiconductor device
US7696506B2 (en) 2006-06-27 2010-04-13 Macronix International Co., Ltd. Memory cell with memory material insulation and manufacturing method
US7785920B2 (en) 2006-07-12 2010-08-31 Macronix International Co., Ltd. Method for making a pillar-type phase change memory element
US7442603B2 (en) * 2006-08-16 2008-10-28 Macronix International Co., Ltd. Self-aligned structure and method for confining a melting point in a resistor random access memory
US7560723B2 (en) 2006-08-29 2009-07-14 Micron Technology, Inc. Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
US8003972B2 (en) * 2006-08-30 2011-08-23 Micron Technology, Inc. Bottom electrode geometry for phase change memory
US7511984B2 (en) * 2006-08-30 2009-03-31 Micron Technology, Inc. Phase change memory
US7772581B2 (en) 2006-09-11 2010-08-10 Macronix International Co., Ltd. Memory device having wide area phase change element and small electrode contact area
JP2008085204A (ja) * 2006-09-28 2008-04-10 Toshiba Corp 半導体記憶装置及びその製造方法
US8766224B2 (en) 2006-10-03 2014-07-01 Hewlett-Packard Development Company, L.P. Electrically actuated switch
US7504653B2 (en) 2006-10-04 2009-03-17 Macronix International Co., Ltd. Memory cell device with circumferentially-extending memory element
US20080090324A1 (en) * 2006-10-12 2008-04-17 Lee Jong-Won S Forming sublithographic heaters for phase change memories
US7510929B2 (en) * 2006-10-18 2009-03-31 Macronix International Co., Ltd. Method for making memory cell device
KR100858083B1 (ko) * 2006-10-18 2008-09-10 삼성전자주식회사 하부전극 콘택층과 상변화층 사이에 넓은 접촉면적을 갖는상변화 메모리 소자 및 그 제조 방법
US7616472B2 (en) * 2006-10-23 2009-11-10 Macronix International Co., Ltd. Method and apparatus for non-volatile multi-bit memory
US7527985B2 (en) 2006-10-24 2009-05-05 Macronix International Co., Ltd. Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas
US8106376B2 (en) * 2006-10-24 2012-01-31 Macronix International Co., Ltd. Method for manufacturing a resistor random access memory with a self-aligned air gap insulator
US20080094885A1 (en) * 2006-10-24 2008-04-24 Macronix International Co., Ltd. Bistable Resistance Random Access Memory Structures with Multiple Memory Layers and Multilevel Memory States
US7863655B2 (en) 2006-10-24 2011-01-04 Macronix International Co., Ltd. Phase change memory cells with dual access devices
US7388771B2 (en) 2006-10-24 2008-06-17 Macronix International Co., Ltd. Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
US20080096344A1 (en) * 2006-10-24 2008-04-24 Macronix International Co., Ltd. Method for Manufacturing a Resistor Random Access Memory with a Self-Aligned Air Gap insulator
US8163593B2 (en) * 2006-11-16 2012-04-24 Sandisk Corporation Method of making a nonvolatile phase change memory cell having a reduced contact area
US7728318B2 (en) * 2006-11-16 2010-06-01 Sandisk Corporation Nonvolatile phase change memory cell having a reduced contact area
US8067762B2 (en) * 2006-11-16 2011-11-29 Macronix International Co., Ltd. Resistance random access memory structure for enhanced retention
US7692949B2 (en) * 2006-12-04 2010-04-06 Qimonda North America Corp. Multi-bit resistive memory
US7476587B2 (en) 2006-12-06 2009-01-13 Macronix International Co., Ltd. Method for making a self-converged memory material element for memory cell
US7473576B2 (en) * 2006-12-06 2009-01-06 Macronix International Co., Ltd. Method for making a self-converged void and bottom electrode for memory cell
US7682868B2 (en) 2006-12-06 2010-03-23 Macronix International Co., Ltd. Method for making a keyhole opening during the manufacture of a memory cell
US7697316B2 (en) * 2006-12-07 2010-04-13 Macronix International Co., Ltd. Multi-level cell resistance random access memory with metal oxides
US7903447B2 (en) 2006-12-13 2011-03-08 Macronix International Co., Ltd. Method, apparatus and computer program product for read before programming process on programmable resistive memory cell
US8344347B2 (en) 2006-12-15 2013-01-01 Macronix International Co., Ltd. Multi-layer electrode structure
US7718989B2 (en) 2006-12-28 2010-05-18 Macronix International Co., Ltd. Resistor random access memory cell device
US7515461B2 (en) * 2007-01-05 2009-04-07 Macronix International Co., Ltd. Current compliant sensing architecture for multilevel phase change memory
US7440315B2 (en) 2007-01-09 2008-10-21 Macronix International Co., Ltd. Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell
US7433226B2 (en) 2007-01-09 2008-10-07 Macronix International Co., Ltd. Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell
US7667220B2 (en) * 2007-01-19 2010-02-23 Macronix International Co., Ltd. Multilevel-cell memory structures employing multi-memory with tungsten oxides and manufacturing method
US20100015755A1 (en) * 2007-01-25 2010-01-21 Renesas Technology Corp. Manufacturing method of semiconductor memory device
US7535756B2 (en) 2007-01-31 2009-05-19 Macronix International Co., Ltd. Method to tighten set distribution for PCRAM
US7663135B2 (en) 2007-01-31 2010-02-16 Macronix International Co., Ltd. Memory cell having a side electrode contact
US7619311B2 (en) 2007-02-02 2009-11-17 Macronix International Co., Ltd. Memory cell device with coplanar electrode surface and method
US7701759B2 (en) 2007-02-05 2010-04-20 Macronix International Co., Ltd. Memory cell device and programming methods
US7483292B2 (en) * 2007-02-07 2009-01-27 Macronix International Co., Ltd. Memory cell with separate read and program paths
US7463512B2 (en) 2007-02-08 2008-12-09 Macronix International Co., Ltd. Memory element with reduced-current phase change element
US8138028B2 (en) 2007-02-12 2012-03-20 Macronix International Co., Ltd Method for manufacturing a phase change memory device with pillar bottom electrode
US7884343B2 (en) * 2007-02-14 2011-02-08 Macronix International Co., Ltd. Phase change memory cell with filled sidewall memory element and method for fabricating the same
US8008643B2 (en) * 2007-02-21 2011-08-30 Macronix International Co., Ltd. Phase change memory cell with heater and method for fabricating the same
US7619237B2 (en) * 2007-02-21 2009-11-17 Macronix International Co., Ltd. Programmable resistive memory cell with self-forming gap
US7956344B2 (en) * 2007-02-27 2011-06-07 Macronix International Co., Ltd. Memory cell with memory element contacting ring-shaped upper end of bottom electrode
US7969769B2 (en) * 2007-03-15 2011-06-28 Ovonyx, Inc. Multi-terminal chalcogenide logic circuits
US7786461B2 (en) 2007-04-03 2010-08-31 Macronix International Co., Ltd. Memory structure with reduced-size memory element between memory material portions
US8610098B2 (en) 2007-04-06 2013-12-17 Macronix International Co., Ltd. Phase change memory bridge cell with diode isolation device
US7755076B2 (en) 2007-04-17 2010-07-13 Macronix International Co., Ltd. 4F2 self align side wall active phase change memory
US7569844B2 (en) * 2007-04-17 2009-08-04 Macronix International Co., Ltd. Memory cell sidewall contacting side electrode
US7483316B2 (en) * 2007-04-24 2009-01-27 Macronix International Co., Ltd. Method and apparatus for refreshing programmable resistive memory
US7695994B2 (en) * 2007-04-24 2010-04-13 Micron Technology, Inc. Material sidewall deposition method
TWI333273B (en) 2007-05-02 2010-11-11 Powerchip Technology Corp Methods for reducing a contact area between heating electrode and phase-change material layer, phase-change memory devices and methods for fabricating the same
KR100857466B1 (ko) * 2007-05-16 2008-09-08 한국전자통신연구원 안티몬-아연 합금을 이용한 상변화형 비휘발성 메모리 소자및 이의 제조방법
US7824956B2 (en) 2007-06-29 2010-11-02 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US8233308B2 (en) * 2007-06-29 2012-07-31 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US7902537B2 (en) 2007-06-29 2011-03-08 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US7846785B2 (en) * 2007-06-29 2010-12-07 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US8513637B2 (en) 2007-07-13 2013-08-20 Macronix International Co., Ltd. 4F2 self align fin bottom electrodes FET drive phase change memory
TWI402980B (zh) 2007-07-20 2013-07-21 Macronix Int Co Ltd 具有緩衝層之電阻式記憶結構
US9203024B2 (en) * 2007-07-25 2015-12-01 Intel Corporation Copper compatible chalcogenide phase change memory with adjustable threshold voltage
US7884342B2 (en) 2007-07-31 2011-02-08 Macronix International Co., Ltd. Phase change memory bridge cell
US7729161B2 (en) 2007-08-02 2010-06-01 Macronix International Co., Ltd. Phase change memory with dual word lines and source lines and method of operating same
US9018615B2 (en) 2007-08-03 2015-04-28 Macronix International Co., Ltd. Resistor random access memory structure having a defined small area of electrical contact
US7642125B2 (en) 2007-09-14 2010-01-05 Macronix International Co., Ltd. Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing
US8178386B2 (en) 2007-09-14 2012-05-15 Macronix International Co., Ltd. Phase change memory cell array with self-converged bottom electrode and method for manufacturing
US7551473B2 (en) 2007-10-12 2009-06-23 Macronix International Co., Ltd. Programmable resistive memory with diode structure
US7919766B2 (en) * 2007-10-22 2011-04-05 Macronix International Co., Ltd. Method for making self aligning pillar memory cell device
US8098517B2 (en) * 2007-10-31 2012-01-17 Ovonyx, Inc. Method of restoring variable resistance memory device
US7804083B2 (en) 2007-11-14 2010-09-28 Macronix International Co., Ltd. Phase change memory cell including a thermal protect bottom electrode and manufacturing methods
US7646631B2 (en) 2007-12-07 2010-01-12 Macronix International Co., Ltd. Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods
US7639527B2 (en) 2008-01-07 2009-12-29 Macronix International Co., Ltd. Phase change memory dynamic resistance test and manufacturing methods
US7879643B2 (en) 2008-01-18 2011-02-01 Macronix International Co., Ltd. Memory cell with memory element contacting an inverted T-shaped bottom electrode
US7879645B2 (en) 2008-01-28 2011-02-01 Macronix International Co., Ltd. Fill-in etching free pore device
US8158965B2 (en) 2008-02-05 2012-04-17 Macronix International Co., Ltd. Heating center PCRAM structure and methods for making
US8084842B2 (en) 2008-03-25 2011-12-27 Macronix International Co., Ltd. Thermally stabilized electrode structure
US8030634B2 (en) 2008-03-31 2011-10-04 Macronix International Co., Ltd. Memory array with diode driver and method for fabricating the same
US7990761B2 (en) * 2008-03-31 2011-08-02 Ovonyx, Inc. Immunity of phase change material to disturb in the amorphous phase
US7825398B2 (en) 2008-04-07 2010-11-02 Macronix International Co., Ltd. Memory cell having improved mechanical stability
US7791057B2 (en) 2008-04-22 2010-09-07 Macronix International Co., Ltd. Memory cell having a buried phase change region and method for fabricating the same
US8077505B2 (en) 2008-05-07 2011-12-13 Macronix International Co., Ltd. Bipolar switching of phase change device
US7701750B2 (en) 2008-05-08 2010-04-20 Macronix International Co., Ltd. Phase change device having two or more substantial amorphous regions in high resistance state
US20110180905A1 (en) * 2008-06-10 2011-07-28 Advanced Technology Materials, Inc. GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRYSTALLINITY
US8415651B2 (en) 2008-06-12 2013-04-09 Macronix International Co., Ltd. Phase change memory cell having top and bottom sidewall contacts
US8134857B2 (en) 2008-06-27 2012-03-13 Macronix International Co., Ltd. Methods for high speed reading operation of phase change memory and device employing same
US7932506B2 (en) 2008-07-22 2011-04-26 Macronix International Co., Ltd. Fully self-aligned pore-type memory cell having diode access device
US8467236B2 (en) 2008-08-01 2013-06-18 Boise State University Continuously variable resistor
US7903457B2 (en) 2008-08-19 2011-03-08 Macronix International Co., Ltd. Multiple phase change materials in an integrated circuit for system on a chip application
US7719913B2 (en) 2008-09-12 2010-05-18 Macronix International Co., Ltd. Sensing circuit for PCRAM applications
US8324605B2 (en) 2008-10-02 2012-12-04 Macronix International Co., Ltd. Dielectric mesh isolated phase change structure for phase change memory
US7897954B2 (en) 2008-10-10 2011-03-01 Macronix International Co., Ltd. Dielectric-sandwiched pillar memory device
US8519376B2 (en) * 2008-10-27 2013-08-27 Seagate Technology Llc Nonvolatile resistive memory devices
US8097870B2 (en) * 2008-11-05 2012-01-17 Seagate Technology Llc Memory cell with alignment structure
US8036014B2 (en) 2008-11-06 2011-10-11 Macronix International Co., Ltd. Phase change memory program method without over-reset
US8664689B2 (en) 2008-11-07 2014-03-04 Macronix International Co., Ltd. Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions
US8907316B2 (en) 2008-11-07 2014-12-09 Macronix International Co., Ltd. Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions
IT1392556B1 (it) 2008-12-18 2012-03-09 St Microelectronics Rousset Struttura di resistore di materiale a cambiamento di fase e relativo metodo di calibratura
US7869270B2 (en) * 2008-12-29 2011-01-11 Macronix International Co., Ltd. Set algorithm for phase change memory cell
TW201025588A (en) * 2008-12-30 2010-07-01 Ind Tech Res Inst Phase-change memory devices and methods for fabricating the same
US8148707B2 (en) * 2008-12-30 2012-04-03 Stmicroelectronics S.R.L. Ovonic threshold switch film composition for TSLAGS material
US8089137B2 (en) 2009-01-07 2012-01-03 Macronix International Co., Ltd. Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method
US8107283B2 (en) 2009-01-12 2012-01-31 Macronix International Co., Ltd. Method for setting PCRAM devices
US8431921B2 (en) * 2009-01-13 2013-04-30 Hewlett-Packard Development Company, L.P. Memristor having a triangular shaped electrode
US8030635B2 (en) 2009-01-13 2011-10-04 Macronix International Co., Ltd. Polysilicon plug bipolar transistor for phase change memory
US8064247B2 (en) * 2009-01-14 2011-11-22 Macronix International Co., Ltd. Rewritable memory device based on segregation/re-absorption
US8933536B2 (en) 2009-01-22 2015-01-13 Macronix International Co., Ltd. Polysilicon pillar bipolar transistor with self-aligned memory element
US8084760B2 (en) 2009-04-20 2011-12-27 Macronix International Co., Ltd. Ring-shaped electrode and manufacturing method for same
US8173987B2 (en) 2009-04-27 2012-05-08 Macronix International Co., Ltd. Integrated circuit 3D phase change memory array and manufacturing method
US8097871B2 (en) 2009-04-30 2012-01-17 Macronix International Co., Ltd. Low operational current phase change memory structures
US7933139B2 (en) 2009-05-15 2011-04-26 Macronix International Co., Ltd. One-transistor, one-resistor, one-capacitor phase change memory
US7968876B2 (en) 2009-05-22 2011-06-28 Macronix International Co., Ltd. Phase change memory cell having vertical channel access transistor
US8350316B2 (en) 2009-05-22 2013-01-08 Macronix International Co., Ltd. Phase change memory cells having vertical channel access transistor and memory plane
US8168538B2 (en) * 2009-05-26 2012-05-01 Macronix International Co., Ltd. Buried silicide structure and method for making
US8809829B2 (en) 2009-06-15 2014-08-19 Macronix International Co., Ltd. Phase change memory having stabilized microstructure and manufacturing method
US8406033B2 (en) * 2009-06-22 2013-03-26 Macronix International Co., Ltd. Memory device and method for sensing and fixing margin cells
US8363463B2 (en) * 2009-06-25 2013-01-29 Macronix International Co., Ltd. Phase change memory having one or more non-constant doping profiles
US8238149B2 (en) * 2009-06-25 2012-08-07 Macronix International Co., Ltd. Methods and apparatus for reducing defect bits in phase change memory
US8110822B2 (en) * 2009-07-15 2012-02-07 Macronix International Co., Ltd. Thermal protect PCRAM structure and methods for making
US8198619B2 (en) 2009-07-15 2012-06-12 Macronix International Co., Ltd. Phase change memory cell structure
US7894254B2 (en) * 2009-07-15 2011-02-22 Macronix International Co., Ltd. Refresh circuitry for phase change memory
US8207593B2 (en) * 2009-07-28 2012-06-26 Hewlett-Packard Development Company, L.P. Memristor having a nanostructure in the switching material
US8283649B2 (en) * 2009-07-28 2012-10-09 Hewlett-Packard Development Company, L.P. Memristor with a non-planar substrate
US8012790B2 (en) * 2009-08-28 2011-09-06 International Business Machines Corporation Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell
US8283650B2 (en) * 2009-08-28 2012-10-09 International Business Machines Corporation Flat lower bottom electrode for phase change memory cell
US8283202B2 (en) 2009-08-28 2012-10-09 International Business Machines Corporation Single mask adder phase change memory element
US20110049456A1 (en) * 2009-09-03 2011-03-03 Macronix International Co., Ltd. Phase change structure with composite doping for phase change memory
US8064248B2 (en) * 2009-09-17 2011-11-22 Macronix International Co., Ltd. 2T2R-1T1R mix mode phase change memory array
US8551855B2 (en) * 2009-10-23 2013-10-08 Sandisk 3D Llc Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same
US8178387B2 (en) * 2009-10-23 2012-05-15 Macronix International Co., Ltd. Methods for reducing recrystallization time for a phase change material
US8481396B2 (en) * 2009-10-23 2013-07-09 Sandisk 3D Llc Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same
US8129268B2 (en) 2009-11-16 2012-03-06 International Business Machines Corporation Self-aligned lower bottom electrode
US8233317B2 (en) * 2009-11-16 2012-07-31 International Business Machines Corporation Phase change memory device suitable for high temperature operation
US7943420B1 (en) * 2009-11-25 2011-05-17 International Business Machines Corporation Single mask adder phase change memory element
US8551850B2 (en) * 2009-12-07 2013-10-08 Sandisk 3D Llc Methods of forming a reversible resistance-switching metal-insulator-metal structure
TWI449170B (zh) * 2009-12-29 2014-08-11 Ind Tech Res Inst 相變化記憶體裝置及其製造方法
US8389375B2 (en) * 2010-02-11 2013-03-05 Sandisk 3D Llc Memory cell formed using a recess and methods for forming the same
US8237146B2 (en) * 2010-02-24 2012-08-07 Sandisk 3D Llc Memory cell with silicon-containing carbon switching layer and methods for forming the same
US20110210306A1 (en) * 2010-02-26 2011-09-01 Yubao Li Memory cell that includes a carbon-based memory element and methods of forming the same
TW201132787A (en) * 2010-03-26 2011-10-01 Advanced Tech Materials Germanium antimony telluride materials and devices incorporating same
US8471360B2 (en) 2010-04-14 2013-06-25 Sandisk 3D Llc Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same
US8828788B2 (en) * 2010-05-11 2014-09-09 Micron Technology, Inc. Forming electrodes for chalcogenide containing devices
US8729521B2 (en) 2010-05-12 2014-05-20 Macronix International Co., Ltd. Self aligned fin-type programmable memory cell
WO2011146913A2 (en) 2010-05-21 2011-11-24 Advanced Technology Materials, Inc. Germanium antimony telluride materials and devices incorporating same
US8310864B2 (en) 2010-06-15 2012-11-13 Macronix International Co., Ltd. Self-aligned bit line under word line memory array
US9082954B2 (en) 2010-09-24 2015-07-14 Macronix International Co., Ltd. PCRAM with current flowing laterally relative to axis defined by electrodes
US9269042B2 (en) 2010-09-30 2016-02-23 International Business Machines Corporation Producing spike-timing dependent plasticity in a neuromorphic network utilizing phase change synaptic devices
US8395935B2 (en) 2010-10-06 2013-03-12 Macronix International Co., Ltd. Cross-point self-aligned reduced cell size phase change memory
KR20130073038A (ko) * 2010-10-29 2013-07-02 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 리본형 접합을 가진 멤리스티브 디바이스 및 멤리스터와, 그 제조 방법
US8497705B2 (en) 2010-11-09 2013-07-30 Macronix International Co., Ltd. Phase change device for interconnection of programmable logic device
US8227785B2 (en) * 2010-11-11 2012-07-24 Micron Technology, Inc. Chalcogenide containing semiconductors with chalcogenide gradient
US8467238B2 (en) 2010-11-15 2013-06-18 Macronix International Co., Ltd. Dynamic pulse operation for phase change memory
US8426242B2 (en) 2011-02-01 2013-04-23 Macronix International Co., Ltd. Composite target sputtering for forming doped phase change materials
US8330139B2 (en) 2011-03-25 2012-12-11 Micron Technology, Inc. Multi-level memory cell
US8497182B2 (en) 2011-04-19 2013-07-30 Macronix International Co., Ltd. Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory
US8605495B2 (en) 2011-05-09 2013-12-10 Macronix International Co., Ltd. Isolation device free memory
US8525290B2 (en) 2011-06-24 2013-09-03 Macronix International Co., Ltd. Method of forming memory cell access device
US8592795B2 (en) 2011-07-01 2013-11-26 Micron Technology, Inc. Multilevel mixed valence oxide (MVO) memory
US9798654B2 (en) 2011-09-15 2017-10-24 International Business Machines Corporation Retention management for phase change memory lifetime improvement through application and hardware profile matching
KR20130043533A (ko) * 2011-10-20 2013-04-30 삼성전자주식회사 도전성 버퍼 패턴을 갖는 비-휘발성 메모리소자 및 그 형성 방법
US8987700B2 (en) 2011-12-02 2015-03-24 Macronix International Co., Ltd. Thermally confined electrode for programmable resistance memory
US8852959B2 (en) * 2011-12-19 2014-10-07 Northrup Grumman Systems Corporation Low temperature resistor for superconductor circuits
KR20130123904A (ko) * 2012-05-04 2013-11-13 에스케이하이닉스 주식회사 반도체 메모리 장치
US8934285B2 (en) * 2012-10-15 2015-01-13 Marvell World Trade Ltd. Method and apparatus for forming a contact in a cell of a resistive random access memory to reduce a voltage required to program the cell
WO2014070682A1 (en) 2012-10-30 2014-05-08 Advaned Technology Materials, Inc. Double self-aligned phase change memory device structure
KR101994449B1 (ko) * 2012-11-08 2019-06-28 삼성전자주식회사 상변화 메모리 소자 및 그 제조방법
JP5934086B2 (ja) 2012-12-27 2016-06-15 株式会社東芝 記憶装置
US8916414B2 (en) 2013-03-13 2014-12-23 Macronix International Co., Ltd. Method for making memory cell by melting phase change material in confined space
US9444040B2 (en) 2013-03-13 2016-09-13 Microchip Technology Incorporated Sidewall type memory cell
US9190455B2 (en) 2013-05-03 2015-11-17 Kabushiki Kaisha Toshiba Semiconductor memory device and production method thereof
CN104966717B (zh) 2014-01-24 2018-04-13 旺宏电子股份有限公司 一种存储器装置及提供该存储器装置的方法
US9412942B2 (en) * 2014-02-19 2016-08-09 Microchip Technology Incorporated Resistive memory cell with bottom electrode having a sloped side wall
US9385313B2 (en) 2014-02-19 2016-07-05 Microchip Technology Incorporated Resistive memory cell having a reduced conductive path area
US9318702B2 (en) 2014-02-19 2016-04-19 Microchip Technology Incorporated Resistive memory cell having a reduced conductive path area
US10003021B2 (en) 2014-02-19 2018-06-19 Microchip Technology Incorporated Resistive memory cell with sloped bottom electrode
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
US9159412B1 (en) 2014-07-15 2015-10-13 Macronix International Co., Ltd. Staggered write and verify for phase change memory
KR101623854B1 (ko) * 2014-10-14 2016-05-24 서울대학교산학협력단 나노 팁 구조를 갖는 저항성 메모리 소자 및 이를 이용한 메모리 어레이와 그 제조방법
CN107004766A (zh) 2014-11-26 2017-08-01 密克罗奇普技术公司 具有用于经减少的导电路径区域/经增强的电场的间隔物区域的电阻式存储器单元
US9672906B2 (en) 2015-06-19 2017-06-06 Macronix International Co., Ltd. Phase change memory with inter-granular switching
US9478495B1 (en) 2015-10-26 2016-10-25 Sandisk Technologies Llc Three dimensional memory device containing aluminum source contact via structure and method of making thereof
WO2017170149A1 (ja) * 2016-03-30 2017-10-05 日本電気株式会社 抵抗変化素子、および抵抗変化素子の製造方法
US10157671B1 (en) 2017-09-12 2018-12-18 Macronix International Co., Ltd. Fast switching 3D cross-point array
US10395733B2 (en) 2017-12-21 2019-08-27 Macronix International Co., Ltd. Forming structure and method for integrated circuit memory
US10808316B2 (en) 2018-05-10 2020-10-20 International Business Machines Corporation Composition control of chemical vapor deposition nitrogen doped germanium antimony tellurium
US11011227B2 (en) * 2018-06-15 2021-05-18 Arm Ltd. Method, system and device for non-volatile memory device operation
US10374009B1 (en) 2018-07-17 2019-08-06 Macronix International Co., Ltd. Te-free AsSeGe chalcogenides for selector devices and memory devices using same
US10497437B1 (en) 2018-07-24 2019-12-03 Macronix International Co., Ltd. Decoding scheme for 3D cross-point memory array
US20200295083A1 (en) * 2019-03-15 2020-09-17 Macronix International Co., Ltd. Barrier layer for selector devices and memory devices using same
US11289540B2 (en) 2019-10-15 2022-03-29 Macronix International Co., Ltd. Semiconductor device and memory cell
US11158787B2 (en) 2019-12-17 2021-10-26 Macronix International Co., Ltd. C—As—Se—Ge ovonic materials for selector devices and memory devices using same
US11362276B2 (en) 2020-03-27 2022-06-14 Macronix International Co., Ltd. High thermal stability SiOx doped GeSbTe materials suitable for embedded PCM application
US11818969B2 (en) * 2020-11-13 2023-11-14 Globalfoundries Singapore Pte. Ltd. Memory devices and method of forming the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5414271A (en) * 1991-01-18 1995-05-09 Energy Conversion Devices, Inc. Electrically erasable memory elements having improved set resistance stability
US5406509A (en) * 1991-01-18 1995-04-11 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5341328A (en) * 1991-01-18 1994-08-23 Energy Conversion Devices, Inc. Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life
US5296716A (en) * 1991-01-18 1994-03-22 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5536947A (en) * 1991-01-18 1996-07-16 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom
US5177567A (en) * 1991-07-19 1993-01-05 Energy Conversion Devices, Inc. Thin-film structure for chalcogenide electrical switching devices and process therefor
US5359205A (en) * 1991-11-07 1994-10-25 Energy Conversion Devices, Inc. Electrically erasable memory elements characterized by reduced current and improved thermal stability
US5714768A (en) * 1995-10-24 1998-02-03 Energy Conversion Devices, Inc. Second-layer phase change memory array on top of a logic device

Also Published As

Publication number Publication date
AU2677297A (en) 1997-11-12
CA2250504C (en) 2006-08-01
EP0894323B1 (de) 2003-07-02
US5687112A (en) 1997-11-11
EP0894323A4 (de) 1999-05-19
CA2250504A1 (en) 1997-10-30
KR100397929B1 (ko) 2003-12-24
WO1997040499A1 (en) 1997-10-30
EP0894323A1 (de) 1999-02-03
USRE37259E1 (en) 2001-07-03
DE69723252T2 (de) 2004-05-27
JP4091984B2 (ja) 2008-05-28
JP2000509204A (ja) 2000-07-18
KR20000010530A (ko) 2000-02-15
TW328590B (en) 1998-03-21

Similar Documents

Publication Publication Date Title
DE69723252D1 (de) Multibiteinzelzellenspeicher mit spitz zulaufendem kontakt
DE69734458D1 (de) Batteriepack mit batteriepack kontaktanordnung
DE69823263D1 (de) Kleinleistungsspeicher mit selektiver Voraufladungsschaltung
DE69515640T2 (de) Batterien mit organischem Elektrolyten
DE69739335D1 (de) Computer mit zusätzlicher Batterie
DE344894T1 (de) Speicherzelle.
DE3585697D1 (de) Solarzelle mit vergrabenem kontakt.
IT1267392B1 (it) Batteria bipolare piombo-acido.
DE69324610D1 (de) In alkalischer Speicherbatterie verwendete positive Nickelelektrode.
DE69706797T2 (de) Sekundärbatterie mit nichtwässrigem elektrolyten
ATE278251T1 (de) Elektrochemische zelle mit verschlusskappe
DE69835992D1 (de) Polymerelektrolytbrennstoffzelle
FI961072A0 (fi) Kiinteän olomuodon sähkökemiallinen kenno
BR9406165A (pt) Pilha eletroquimica
DE69221374T2 (de) Stromspeicherzelle
DE69706320D1 (de) Elektrochmischezellen-stapel mit mittelpfosten
DE69929409D1 (de) Speicherzelle mit kapazitiver Ladung
DE69738168D1 (de) Elektrochemische fluorierung mit unterbrochenem strom
DE69103337T2 (de) Festkörperspannungsspeicherzelle.
DE59810466D1 (de) Flüssigelektrolytbatterie mit elektrolytumwälzung
DE69530166T2 (de) Sekundärzelle mit organischem Elektrolyt
DE59703299D1 (de) Redundanzspeichervorrichtung mit rom-speicherzellen
FI891201A0 (fi) Elektrokemisk cell.
DE59903684D1 (de) Dual-port speicherzelle
DE69809365D1 (de) Sekundärzelle mit Gelelektrolyt

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee