DE69714881T2 - Integrierter Hochfrequenzverstärker - Google Patents

Integrierter Hochfrequenzverstärker

Info

Publication number
DE69714881T2
DE69714881T2 DE69714881T DE69714881T DE69714881T2 DE 69714881 T2 DE69714881 T2 DE 69714881T2 DE 69714881 T DE69714881 T DE 69714881T DE 69714881 T DE69714881 T DE 69714881T DE 69714881 T2 DE69714881 T2 DE 69714881T2
Authority
DE
Germany
Prior art keywords
high frequency
frequency amplifier
integrated high
integrated
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69714881T
Other languages
English (en)
Other versions
DE69714881D1 (de
Inventor
Dominique Brunel
Jacques Trichet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Semiconducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Semiconducteurs SA filed Critical Motorola Semiconducteurs SA
Application granted granted Critical
Publication of DE69714881D1 publication Critical patent/DE69714881D1/de
Publication of DE69714881T2 publication Critical patent/DE69714881T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/305—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in case of switching on or off of a power supply

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
DE69714881T 1996-02-06 1997-01-30 Integrierter Hochfrequenzverstärker Expired - Fee Related DE69714881T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9601392A FR2744578B1 (fr) 1996-02-06 1996-02-06 Amlificateur hautes frequences

Publications (2)

Publication Number Publication Date
DE69714881D1 DE69714881D1 (de) 2002-10-02
DE69714881T2 true DE69714881T2 (de) 2003-04-10

Family

ID=9488867

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69714881T Expired - Fee Related DE69714881T2 (de) 1996-02-06 1997-01-30 Integrierter Hochfrequenzverstärker

Country Status (5)

Country Link
US (1) US5874860A (de)
EP (1) EP0789451B1 (de)
JP (1) JP3901780B2 (de)
DE (1) DE69714881T2 (de)
FR (1) FR2744578B1 (de)

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GB2331879B (en) * 1996-08-05 2001-03-28 Mitsubishi Electric Corp Radio-frequency integrated circuit for a radio-frequency wireless transmitter-receiver with reduced influence by radio-frequency power leakage
DE19737062A1 (de) * 1997-08-26 1999-03-04 Bosch Gmbh Robert Verfahren und Schaltungsanordnung zur Einstellung eines Arbeitspunktes einer Transistorstufe
US6043712A (en) * 1998-07-17 2000-03-28 Motorola, Inc. Linear power amplifier
US6791419B1 (en) * 1998-12-02 2004-09-14 Ericsson, Inc. Constant gain, constant phase RF power block
US6104246A (en) * 1999-05-25 2000-08-15 International Business Machines Corporation Variable gain RF amplifier with switchable bias injection and feedback
US6300835B1 (en) 1999-12-10 2001-10-09 Motorola, Inc. Power amplifier core
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6721368B1 (en) * 2000-03-04 2004-04-13 Qualcomm Incorporated Transmitter architectures for communications systems
AU2001257346A1 (en) * 2000-05-31 2001-12-11 Motorola, Inc. Semiconductor device and method for manufacturing the same
US6477285B1 (en) 2000-06-30 2002-11-05 Motorola, Inc. Integrated circuits with optical signal propagation
US6427066B1 (en) 2000-06-30 2002-07-30 Motorola, Inc. Apparatus and method for effecting communications among a plurality of remote stations
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
US6410941B1 (en) 2000-06-30 2002-06-25 Motorola, Inc. Reconfigurable systems using hybrid integrated circuits with optical ports
US6590236B1 (en) 2000-07-24 2003-07-08 Motorola, Inc. Semiconductor structure for use with high-frequency signals
US6482538B2 (en) 2000-07-24 2002-11-19 Motorola, Inc. Microelectronic piezoelectric structure and method of forming the same
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
WO2002009187A2 (en) * 2000-07-24 2002-01-31 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US6432546B1 (en) * 2000-07-24 2002-08-13 Motorola, Inc. Microelectronic piezoelectric structure and method of forming the same
US6369641B1 (en) * 2000-09-22 2002-04-09 Infineon Technologies North America Corp. Biasing circuits
US6493497B1 (en) 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6583034B2 (en) 2000-11-22 2003-06-24 Motorola, Inc. Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure
US6563118B2 (en) 2000-12-08 2003-05-13 Motorola, Inc. Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same
US6559471B2 (en) 2000-12-08 2003-05-06 Motorola, Inc. Quantum well infrared photodetector and method for fabricating same
US20020096683A1 (en) * 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US7046719B2 (en) 2001-03-08 2006-05-16 Motorola, Inc. Soft handoff between cellular systems employing different encoding rates
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US20030010992A1 (en) * 2001-07-16 2003-01-16 Motorola, Inc. Semiconductor structure and method for implementing cross-point switch functionality
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6472694B1 (en) 2001-07-23 2002-10-29 Motorola, Inc. Microprocessor structure having a compound semiconductor layer
US6855992B2 (en) * 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6594414B2 (en) 2001-07-25 2003-07-15 Motorola, Inc. Structure and method of fabrication for an optical switch
US6585424B2 (en) 2001-07-25 2003-07-01 Motorola, Inc. Structure and method for fabricating an electro-rheological lens
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6462360B1 (en) 2001-08-06 2002-10-08 Motorola, Inc. Integrated gallium arsenide communications systems
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030036217A1 (en) * 2001-08-16 2003-02-20 Motorola, Inc. Microcavity semiconductor laser coupled to a waveguide
US20030071327A1 (en) * 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
KR100480244B1 (ko) * 2002-06-03 2005-04-06 삼성전자주식회사 레이저 모듈
US20040012037A1 (en) * 2002-07-18 2004-01-22 Motorola, Inc. Hetero-integration of semiconductor materials on silicon
US20040069991A1 (en) * 2002-10-10 2004-04-15 Motorola, Inc. Perovskite cuprate electronic device structure and process
US7020374B2 (en) * 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US6965128B2 (en) * 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US20040164315A1 (en) * 2003-02-25 2004-08-26 Motorola, Inc. Structure and device including a tunneling piezoelectric switch and method of forming same
JP4843927B2 (ja) 2004-10-13 2011-12-21 ソニー株式会社 高周波集積回路
EP1811658A1 (de) * 2006-01-24 2007-07-25 Alcatel Lucent Vorspannungsschutz für Leistungsverstärker mit Verarmungstyptransistor
US7733134B1 (en) * 2006-03-31 2010-06-08 Ciena Corporation High speed low noise switch
US8644777B2 (en) * 2010-05-07 2014-02-04 Skyworks Solutions, Inc. System and method for power amplifier over-voltage protection
DE102018113654A1 (de) 2018-06-08 2019-12-12 Schaeffler Technologies AG & Co. KG Zylinderkopfmodul eines variablen Ventiltriebs einer Brennkraftmaschine
US20200076488A1 (en) 2018-08-30 2020-03-05 Skyworks Solutions, Inc. Beamforming communication systems with sensor aided beam management
CN112483214A (zh) * 2019-09-12 2021-03-12 舍弗勒技术股份两合公司 内燃机的可变气门机构的缸盖模块

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268797A (en) * 1979-03-28 1981-05-19 Westinghouse Electric Corp. Self-pulsed microwave power amplifier
JPS5669908A (en) * 1979-11-12 1981-06-11 Mitsubishi Electric Corp Field effect transistor circuit with protecting circuit
FR2512292B1 (fr) * 1981-08-25 1986-11-21 Lmt Radio Professionelle Amplificateur hyperfrequence a transistors a effet de champ, notamment pour radar doppler
US4994757A (en) * 1989-11-01 1991-02-19 Motorola, Inc. Efficiency improvement of power amplifiers
ES2073541T3 (es) * 1989-12-05 1995-08-16 Nec Corp Unidad amplificadora de potencia que utiliza un modulo amplificador de potencia.
US5640693A (en) * 1994-08-30 1997-06-17 Sensormatic Electronics Corporation Transmitter for pulsed electronic article surveillance systems
US5642378A (en) * 1994-11-17 1997-06-24 Denheyer; Brian John Dual mode analog and digital cellular phone

Also Published As

Publication number Publication date
FR2744578B1 (fr) 1998-04-30
US5874860A (en) 1999-02-23
DE69714881D1 (de) 2002-10-02
EP0789451A1 (de) 1997-08-13
JPH09232875A (ja) 1997-09-05
FR2744578A1 (fr) 1997-08-08
JP3901780B2 (ja) 2007-04-04
EP0789451B1 (de) 2002-08-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US

8339 Ceased/non-payment of the annual fee