US6399970B2
(en)
*
|
1996-09-17 |
2002-06-04 |
Matsushita Electric Industrial Co., Ltd. |
FET having a Si/SiGeC heterojunction channel
|
JPH10270685A
(ja)
*
|
1997-03-27 |
1998-10-09 |
Sony Corp |
電界効果トランジスタとその製造方法、半導体装置とその製造方法、その半導体装置を含む論理回路および半導体基板
|
KR100400808B1
(ko)
*
|
1997-06-24 |
2003-10-08 |
매사츄세츠 인스티튜트 오브 테크놀러지 |
그레이드된 GeSi층 및 평탄화를 사용한 Si상의 Ge의 쓰레딩 전위 밀도 제어
|
JP3443343B2
(ja)
|
1997-12-03 |
2003-09-02 |
松下電器産業株式会社 |
半導体装置
|
AU764799B2
(en)
*
|
1997-12-29 |
2003-08-28 |
Coretek, Inc. |
Microelectromechanically tunable, confocal, vertical cavity surface emitting laser and fabry-perot filter
|
TW415103B
(en)
*
|
1998-03-02 |
2000-12-11 |
Ibm |
Si/SiGe optoelectronic integrated circuits
|
JP4258034B2
(ja)
*
|
1998-05-27 |
2009-04-30 |
ソニー株式会社 |
半導体装置及び半導体装置の製造方法
|
EP1020900B1
(de)
*
|
1999-01-14 |
2009-08-05 |
Panasonic Corporation |
Halbleiterbauelement und Verfahren zu dessen Herstellung
|
JP2000243854A
(ja)
*
|
1999-02-22 |
2000-09-08 |
Toshiba Corp |
半導体装置及びその製造方法
|
JP4521542B2
(ja)
*
|
1999-03-30 |
2010-08-11 |
ルネサスエレクトロニクス株式会社 |
半導体装置および半導体基板
|
US6744079B2
(en)
*
|
2002-03-08 |
2004-06-01 |
International Business Machines Corporation |
Optimized blocking impurity placement for SiGe HBTs
|
DE60036594T2
(de)
*
|
1999-11-15 |
2008-01-31 |
Matsushita Electric Industrial Co., Ltd., Kadoma |
Feldeffekt-Halbleiterbauelement
|
WO2001054175A1
(en)
*
|
2000-01-20 |
2001-07-26 |
Amberwave Systems Corporation |
Low threading dislocation density relaxed mismatched epilayers without high temperature growth
|
US6602613B1
(en)
|
2000-01-20 |
2003-08-05 |
Amberwave Systems Corporation |
Heterointegration of materials using deposition and bonding
|
WO2001073852A1
(fr)
*
|
2000-03-27 |
2001-10-04 |
Matsushita Electric Industrial Co., Ltd. |
Cristal semi-conducteur sigec et son procede de fabrication
|
US6319799B1
(en)
*
|
2000-05-09 |
2001-11-20 |
Board Of Regents, The University Of Texas System |
High mobility heterojunction transistor and method
|
US6647041B1
(en)
*
|
2000-05-26 |
2003-11-11 |
Finisar Corporation |
Electrically pumped vertical optical cavity with improved electrical performance
|
AU2001263211A1
(en)
|
2000-05-26 |
2001-12-11 |
Amberwave Systems Corporation |
Buried channel strained silicon fet using an ion implanted doped layer
|
US6743680B1
(en)
*
|
2000-06-22 |
2004-06-01 |
Advanced Micro Devices, Inc. |
Process for manufacturing transistors having silicon/germanium channel regions
|
JP4447128B2
(ja)
*
|
2000-07-12 |
2010-04-07 |
富士通マイクロエレクトロニクス株式会社 |
絶縁ゲート型半導体装置の製造方法
|
JP2002043566A
(ja)
*
|
2000-07-27 |
2002-02-08 |
Matsushita Electric Ind Co Ltd |
半導体装置及びその製造方法
|
US20110091428A1
(en)
*
|
2000-07-31 |
2011-04-21 |
New York Medical College |
Compositions of adult organ stem cells and uses thereof
|
JP2004519090A
(ja)
*
|
2000-08-07 |
2004-06-24 |
アンバーウェーブ システムズ コーポレイション |
歪み表面チャネル及び歪み埋め込みチャネルmosfet素子のゲート技術
|
JP2004507084A
(ja)
|
2000-08-16 |
2004-03-04 |
マサチューセッツ インスティテュート オブ テクノロジー |
グレーデッドエピタキシャル成長を用いた半導体品の製造プロセス
|
US20020163013A1
(en)
*
|
2000-09-11 |
2002-11-07 |
Kenji Toyoda |
Heterojunction bipolar transistor
|
JP2002100762A
(ja)
*
|
2000-09-22 |
2002-04-05 |
Mitsubishi Electric Corp |
半導体装置およびその製造方法
|
US20020100942A1
(en)
*
|
2000-12-04 |
2002-08-01 |
Fitzgerald Eugene A. |
CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
|
US6649480B2
(en)
|
2000-12-04 |
2003-11-18 |
Amberwave Systems Corporation |
Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
|
JP4511092B2
(ja)
*
|
2000-12-11 |
2010-07-28 |
セイコーエプソン株式会社 |
半導体素子の製造方法
|
WO2002052652A1
(fr)
*
|
2000-12-26 |
2002-07-04 |
Matsushita Electric Industrial Co., Ltd. |
Composant a semi-conducteur et son procede de fabrication
|
US6646322B2
(en)
*
|
2001-03-02 |
2003-11-11 |
Amberwave Systems Corporation |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
|
US6900103B2
(en)
*
|
2001-03-02 |
2005-05-31 |
Amberwave Systems Corporation |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
|
US6723661B2
(en)
|
2001-03-02 |
2004-04-20 |
Amberwave Systems Corporation |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
|
US6724008B2
(en)
|
2001-03-02 |
2004-04-20 |
Amberwave Systems Corporation |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
|
US6830976B2
(en)
*
|
2001-03-02 |
2004-12-14 |
Amberwave Systems Corproation |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
|
US6703688B1
(en)
|
2001-03-02 |
2004-03-09 |
Amberwave Systems Corporation |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
|
US7205604B2
(en)
|
2001-03-13 |
2007-04-17 |
International Business Machines Corporation |
Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof
|
US6709935B1
(en)
|
2001-03-26 |
2004-03-23 |
Advanced Micro Devices, Inc. |
Method of locally forming a silicon/geranium channel layer
|
TWI264818B
(en)
|
2001-04-03 |
2006-10-21 |
Matsushita Electric Ind Co Ltd |
Semiconductor device and its production method
|
US6781163B2
(en)
*
|
2001-04-12 |
2004-08-24 |
Matsushita Electric Industrial Co., Ltd. |
Heterojunction field effect transistor
|
US6750119B2
(en)
*
|
2001-04-20 |
2004-06-15 |
International Business Machines Corporation |
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD
|
US6855436B2
(en)
*
|
2003-05-30 |
2005-02-15 |
International Business Machines Corporation |
Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal
|
WO2002103760A2
(en)
*
|
2001-06-14 |
2002-12-27 |
Amberware Systems Corporation |
Method of selective removal of sige alloys
|
US7301180B2
(en)
|
2001-06-18 |
2007-11-27 |
Massachusetts Institute Of Technology |
Structure and method for a high-speed semiconductor device having a Ge channel layer
|
US6429084B1
(en)
*
|
2001-06-20 |
2002-08-06 |
International Business Machines Corporation |
MOS transistors with raised sources and drains
|
US6916727B2
(en)
*
|
2001-06-21 |
2005-07-12 |
Massachusetts Institute Of Technology |
Enhancement of P-type metal-oxide-semiconductor field effect transistors
|
US6730551B2
(en)
*
|
2001-08-06 |
2004-05-04 |
Massachusetts Institute Of Technology |
Formation of planar strained layers
|
US6974735B2
(en)
*
|
2001-08-09 |
2005-12-13 |
Amberwave Systems Corporation |
Dual layer Semiconductor Devices
|
US7138649B2
(en)
|
2001-08-09 |
2006-11-21 |
Amberwave Systems Corporation |
Dual-channel CMOS transistors with differentially strained channels
|
WO2003025984A2
(en)
|
2001-09-21 |
2003-03-27 |
Amberwave Systems Corporation |
Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
|
AU2002341803A1
(en)
|
2001-09-24 |
2003-04-07 |
Amberwave Systems Corporation |
Rf circuits including transistors having strained material layers
|
JP4799786B2
(ja)
*
|
2001-10-02 |
2011-10-26 |
ルネサスエレクトロニクス株式会社 |
電力増幅用電界効果型半導体装置およびその製造方法、ならびにパワーモジュール
|
US6621131B2
(en)
|
2001-11-01 |
2003-09-16 |
Intel Corporation |
Semiconductor transistor having a stressed channel
|
JP4060580B2
(ja)
*
|
2001-11-29 |
2008-03-12 |
株式会社ルネサステクノロジ |
ヘテロ接合バイポーラトランジスタ
|
US6703271B2
(en)
*
|
2001-11-30 |
2004-03-09 |
Taiwan Semiconductor Manufacturing Company |
Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer
|
JP3610951B2
(ja)
*
|
2002-01-16 |
2005-01-19 |
ソニー株式会社 |
半導体装置及び半導体装置の製造方法
|
US6805962B2
(en)
|
2002-01-23 |
2004-10-19 |
International Business Machines Corporation |
Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications
|
US6492216B1
(en)
*
|
2002-02-07 |
2002-12-10 |
Taiwan Semiconductor Manufacturing Company |
Method of forming a transistor with a strained channel
|
US6635909B2
(en)
*
|
2002-03-19 |
2003-10-21 |
International Business Machines Corporation |
Strained fin FETs structure and method
|
US20030227057A1
(en)
|
2002-06-07 |
2003-12-11 |
Lochtefeld Anthony J. |
Strained-semiconductor-on-insulator device structures
|
US6995430B2
(en)
|
2002-06-07 |
2006-02-07 |
Amberwave Systems Corporation |
Strained-semiconductor-on-insulator device structures
|
WO2003105204A2
(en)
*
|
2002-06-07 |
2003-12-18 |
Amberwave Systems Corporation |
Semiconductor devices having strained dual channel layers
|
US7307273B2
(en)
*
|
2002-06-07 |
2007-12-11 |
Amberwave Systems Corporation |
Control of strain in device layers by selective relaxation
|
US6946371B2
(en)
*
|
2002-06-10 |
2005-09-20 |
Amberwave Systems Corporation |
Methods of fabricating semiconductor structures having epitaxially grown source and drain elements
|
JP4421811B2
(ja)
*
|
2002-06-25 |
2010-02-24 |
株式会社ルネサステクノロジ |
半導体集積回路装置およびその製造方法
|
US6982474B2
(en)
|
2002-06-25 |
2006-01-03 |
Amberwave Systems Corporation |
Reacted conductive gate electrodes
|
JP3597831B2
(ja)
*
|
2002-07-01 |
2004-12-08 |
株式会社東芝 |
電界効果トランジスタ及びその製造方法
|
JP4750342B2
(ja)
*
|
2002-07-03 |
2011-08-17 |
ルネサスエレクトロニクス株式会社 |
Mos−fetおよびその製造方法、並びに半導体装置
|
US7084423B2
(en)
|
2002-08-12 |
2006-08-01 |
Acorn Technologies, Inc. |
Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
|
US6833556B2
(en)
|
2002-08-12 |
2004-12-21 |
Acorn Technologies, Inc. |
Insulated gate field effect transistor having passivated schottky barriers to the channel
|
EP1530800B1
(de)
*
|
2002-08-23 |
2016-12-14 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Halbleiter-heterostrukturen mit reduzierter anhäufung von versetzungen und entsprechende herstellungsverfahren
|
US7594967B2
(en)
*
|
2002-08-30 |
2009-09-29 |
Amberwave Systems Corporation |
Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
|
US6818938B1
(en)
*
|
2002-12-10 |
2004-11-16 |
National Semiconductor Corporation |
MOS transistor and method of forming the transistor with a channel region in a layer of composite material
|
US7098095B1
(en)
*
|
2002-12-10 |
2006-08-29 |
National Semiconductor Corporation |
Method of forming a MOS transistor with a layer of silicon germanium carbon
|
EP1439570A1
(de)
*
|
2003-01-14 |
2004-07-21 |
Interuniversitair Microelektronica Centrum ( Imec) |
Spannungsrelaxierte SiGe Pufferschichten für Anordnungen mit hoher Beweglichkeit und Herstellungsverfahren
|
US6903384B2
(en)
*
|
2003-01-15 |
2005-06-07 |
Sharp Laboratories Of America, Inc. |
System and method for isolating silicon germanium dislocation regions in strained-silicon CMOS applications
|
US6921913B2
(en)
*
|
2003-03-04 |
2005-07-26 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Strained-channel transistor structure with lattice-mismatched zone
|
CN100437970C
(zh)
*
|
2003-03-07 |
2008-11-26 |
琥珀波系统公司 |
一种结构及用于形成半导体结构的方法
|
US6963078B2
(en)
*
|
2003-03-15 |
2005-11-08 |
International Business Machines Corporation |
Dual strain-state SiGe layers for microelectronics
|
US7517768B2
(en)
*
|
2003-03-31 |
2009-04-14 |
Intel Corporation |
Method for fabricating a heterojunction bipolar transistor
|
US6867433B2
(en)
*
|
2003-04-30 |
2005-03-15 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistors
|
US7183611B2
(en)
*
|
2003-06-03 |
2007-02-27 |
Micron Technology, Inc. |
SRAM constructions, and electronic systems comprising SRAM constructions
|
US6927414B2
(en)
*
|
2003-06-17 |
2005-08-09 |
International Business Machines Corporation |
High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof
|
TWI294670B
(en)
*
|
2003-06-17 |
2008-03-11 |
Ibm |
Ultra scalable high speed heterojunction vertical n-channel misfets and methods thereof
|
US6943407B2
(en)
*
|
2003-06-17 |
2005-09-13 |
International Business Machines Corporation |
Low leakage heterojunction vertical transistors and high performance devices thereof
|
US7456476B2
(en)
|
2003-06-27 |
2008-11-25 |
Intel Corporation |
Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication
|
US6909151B2
(en)
*
|
2003-06-27 |
2005-06-21 |
Intel Corporation |
Nonplanar device with stress incorporation layer and method of fabrication
|
US20050012087A1
(en)
*
|
2003-07-15 |
2005-01-20 |
Yi-Ming Sheu |
Self-aligned MOSFET having an oxide region below the channel
|
US6940705B2
(en)
*
|
2003-07-25 |
2005-09-06 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Capacitor with enhanced performance and method of manufacture
|
US7078742B2
(en)
|
2003-07-25 |
2006-07-18 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Strained-channel semiconductor structure and method of fabricating the same
|
US6936881B2
(en)
*
|
2003-07-25 |
2005-08-30 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Capacitor that includes high permittivity capacitor dielectric
|
US20050035369A1
(en)
*
|
2003-08-15 |
2005-02-17 |
Chun-Chieh Lin |
Structure and method of forming integrated circuits utilizing strained channel transistors
|
US20050035410A1
(en)
*
|
2003-08-15 |
2005-02-17 |
Yee-Chia Yeo |
Semiconductor diode with reduced leakage
|
US7112495B2
(en)
*
|
2003-08-15 |
2006-09-26 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
|
US7923785B2
(en)
*
|
2003-08-18 |
2011-04-12 |
Globalfoundries Inc. |
Field effect transistor having increased carrier mobility
|
US7071052B2
(en)
*
|
2003-08-18 |
2006-07-04 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Resistor with reduced leakage
|
US6949761B2
(en)
*
|
2003-10-14 |
2005-09-27 |
International Business Machines Corporation |
Structure for and method of fabricating a high-mobility field-effect transistor
|
US7037770B2
(en)
*
|
2003-10-20 |
2006-05-02 |
International Business Machines Corporation |
Method of manufacturing strained dislocation-free channels for CMOS
|
US7888201B2
(en)
|
2003-11-04 |
2011-02-15 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistors
|
US7247534B2
(en)
*
|
2003-11-19 |
2007-07-24 |
International Business Machines Corporation |
Silicon device on Si:C-OI and SGOI and method of manufacture
|
US20050104092A1
(en)
*
|
2003-11-19 |
2005-05-19 |
International Business Machiness Corportion |
Method of reducing dislocation-induced leakage in a strained-layer field-effect transistor
|
US7183593B2
(en)
*
|
2003-12-05 |
2007-02-27 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Heterostructure resistor and method of forming the same
|
US7662689B2
(en)
|
2003-12-23 |
2010-02-16 |
Intel Corporation |
Strained transistor integration for CMOS
|
US7223679B2
(en)
*
|
2003-12-24 |
2007-05-29 |
Intel Corporation |
Transistor gate electrode having conductor material layer
|
US7579636B2
(en)
*
|
2004-01-08 |
2009-08-25 |
Nec Corporation |
MIS-type field-effect transistor
|
US7224007B1
(en)
*
|
2004-01-12 |
2007-05-29 |
Advanced Micro Devices, Inc. |
Multi-channel transistor with tunable hot carrier effect
|
US7268058B2
(en)
*
|
2004-01-16 |
2007-09-11 |
Intel Corporation |
Tri-gate transistors and methods to fabricate same
|
JP3884439B2
(ja)
*
|
2004-03-02 |
2007-02-21 |
株式会社東芝 |
半導体装置
|
JP4177775B2
(ja)
*
|
2004-03-16 |
2008-11-05 |
株式会社東芝 |
半導体基板及びその製造方法並びに半導体装置
|
US7154118B2
(en)
|
2004-03-31 |
2006-12-26 |
Intel Corporation |
Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
|
CN102854229A
(zh)
*
|
2004-04-02 |
2013-01-02 |
硅实验室公司 |
集成电子传感器
|
US7087965B2
(en)
*
|
2004-04-22 |
2006-08-08 |
International Business Machines Corporation |
Strained silicon CMOS on hybrid crystal orientations
|
US20050253205A1
(en)
*
|
2004-05-17 |
2005-11-17 |
Fujitsu Limited |
Semiconductor device and method for fabricating the same
|
US7223994B2
(en)
*
|
2004-06-03 |
2007-05-29 |
International Business Machines Corporation |
Strained Si on multiple materials for bulk or SOI substrates
|
US7244958B2
(en)
*
|
2004-06-24 |
2007-07-17 |
International Business Machines Corporation |
Integration of strained Ge into advanced CMOS technology
|
US7042009B2
(en)
|
2004-06-30 |
2006-05-09 |
Intel Corporation |
High mobility tri-gate devices and methods of fabrication
|
US7348284B2
(en)
|
2004-08-10 |
2008-03-25 |
Intel Corporation |
Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow
|
US7078722B2
(en)
*
|
2004-09-20 |
2006-07-18 |
International Business Machines Corporation |
NFET and PFET devices and methods of fabricating same
|
US7332439B2
(en)
*
|
2004-09-29 |
2008-02-19 |
Intel Corporation |
Metal gate transistors with epitaxial source and drain regions
|
US7422946B2
(en)
|
2004-09-29 |
2008-09-09 |
Intel Corporation |
Independently accessed double-gate and tri-gate transistors in same process flow
|
US7361958B2
(en)
*
|
2004-09-30 |
2008-04-22 |
Intel Corporation |
Nonplanar transistors with metal gate electrodes
|
US7202124B2
(en)
*
|
2004-10-01 |
2007-04-10 |
Massachusetts Institute Of Technology |
Strained gettering layers for semiconductor processes
|
US20060086977A1
(en)
|
2004-10-25 |
2006-04-27 |
Uday Shah |
Nonplanar device with thinned lower body portion and method of fabrication
|
KR100592735B1
(ko)
*
|
2004-11-16 |
2006-06-26 |
한국전자통신연구원 |
반도체 소자의 트랜지스터 및 그 제조방법
|
KR100592749B1
(ko)
*
|
2004-11-17 |
2006-06-26 |
한국전자통신연구원 |
실리콘과 실리콘 게르마늄 이종 구조를 가지는 고전압전계효과 트랜지스터 및 그 제조 방법
|
US7547605B2
(en)
*
|
2004-11-22 |
2009-06-16 |
Taiwan Semiconductor Manufacturing Company |
Microelectronic device and a method for its manufacture
|
US7393733B2
(en)
|
2004-12-01 |
2008-07-01 |
Amberwave Systems Corporation |
Methods of forming hybrid fin field-effect transistor structures
|
KR100607785B1
(ko)
*
|
2004-12-31 |
2006-08-02 |
동부일렉트로닉스 주식회사 |
스플릿 게이트 플래시 이이피롬의 제조방법
|
US7271043B2
(en)
|
2005-01-18 |
2007-09-18 |
International Business Machines Corporation |
Method for manufacturing strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels
|
US7518196B2
(en)
|
2005-02-23 |
2009-04-14 |
Intel Corporation |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication
|
US20060202266A1
(en)
|
2005-03-14 |
2006-09-14 |
Marko Radosavljevic |
Field effect transistor with metal source/drain regions
|
WO2006103321A1
(fr)
*
|
2005-04-01 |
2006-10-05 |
Stmicroelectronics (Crolles 2) Sas |
Transistor pmos a canal contraint et procede de fabrication correspondant
|
US20060234455A1
(en)
*
|
2005-04-19 |
2006-10-19 |
Chien-Hao Chen |
Structures and methods for forming a locally strained transistor
|
US7858481B2
(en)
|
2005-06-15 |
2010-12-28 |
Intel Corporation |
Method for fabricating transistor with thinned channel
|
US7547637B2
(en)
|
2005-06-21 |
2009-06-16 |
Intel Corporation |
Methods for patterning a semiconductor film
|
US20070054460A1
(en)
*
|
2005-06-23 |
2007-03-08 |
Atmel Corporation |
System and method for providing a nanoscale, highly selective, and thermally resilient silicon, germanium, or silicon-germanium etch-stop
|
US20080050883A1
(en)
*
|
2006-08-25 |
2008-02-28 |
Atmel Corporation |
Hetrojunction bipolar transistor (hbt) with periodic multilayer base
|
US20060292809A1
(en)
*
|
2005-06-23 |
2006-12-28 |
Enicks Darwin G |
Method for growth and optimization of heterojunction bipolar transistor film stacks by remote injection
|
US7279375B2
(en)
|
2005-06-30 |
2007-10-09 |
Intel Corporation |
Block contact architectures for nanoscale channel transistors
|
US7402875B2
(en)
|
2005-08-17 |
2008-07-22 |
Intel Corporation |
Lateral undercut of metal gate in SOI device
|
US7479421B2
(en)
|
2005-09-28 |
2009-01-20 |
Intel Corporation |
Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby
|
US20070069302A1
(en)
*
|
2005-09-28 |
2007-03-29 |
Been-Yih Jin |
Method of fabricating CMOS devices having a single work function gate electrode by band gap engineering and article made thereby
|
US20070090416A1
(en)
|
2005-09-28 |
2007-04-26 |
Doyle Brian S |
CMOS devices with a single work function gate electrode and method of fabrication
|
US20070090408A1
(en)
*
|
2005-09-29 |
2007-04-26 |
Amlan Majumdar |
Narrow-body multiple-gate FET with dominant body transistor for high performance
|
US7947546B2
(en)
*
|
2005-10-31 |
2011-05-24 |
Chartered Semiconductor Manufacturing, Ltd. |
Implant damage control by in-situ C doping during SiGe epitaxy for device applications
|
US8120060B2
(en)
*
|
2005-11-01 |
2012-02-21 |
Massachusetts Institute Of Technology |
Monolithically integrated silicon and III-V electronics
|
US20070102834A1
(en)
*
|
2005-11-07 |
2007-05-10 |
Enicks Darwin G |
Strain-compensated metastable compound base heterojunction bipolar transistor
|
US8530934B2
(en)
|
2005-11-07 |
2013-09-10 |
Atmel Corporation |
Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto
|
US7485503B2
(en)
|
2005-11-30 |
2009-02-03 |
Intel Corporation |
Dielectric interface for group III-V semiconductor device
|
WO2007067589A2
(en)
*
|
2005-12-05 |
2007-06-14 |
Massachusetts Institute Of Technology |
Insulated gate devices and method of making same
|
US8183556B2
(en)
|
2005-12-15 |
2012-05-22 |
Intel Corporation |
Extreme high mobility CMOS logic
|
US20070148890A1
(en)
*
|
2005-12-27 |
2007-06-28 |
Enicks Darwin G |
Oxygen enhanced metastable silicon germanium film layer
|
US20070152266A1
(en)
*
|
2005-12-29 |
2007-07-05 |
Intel Corporation |
Method and structure for reducing the external resistance of a three-dimensional transistor through use of epitaxial layers
|
US8900980B2
(en)
*
|
2006-01-20 |
2014-12-02 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Defect-free SiGe source/drain formation by epitaxy-free process
|
US7691698B2
(en)
*
|
2006-02-21 |
2010-04-06 |
International Business Machines Corporation |
Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain
|
US20070235877A1
(en)
*
|
2006-03-31 |
2007-10-11 |
Miriam Reshotko |
Integration scheme for semiconductor photodetectors on an integrated circuit chip
|
US7700975B2
(en)
*
|
2006-03-31 |
2010-04-20 |
Intel Corporation |
Schottky barrier metal-germanium contact in metal-germanium-metal photodetectors
|
US20070262295A1
(en)
*
|
2006-05-11 |
2007-11-15 |
Atmel Corporation |
A method for manipulation of oxygen within semiconductor materials
|
US7436006B2
(en)
*
|
2006-05-19 |
2008-10-14 |
International Business Machines Corporation |
Hybrid strained orientated substrates and devices
|
US7772060B2
(en)
*
|
2006-06-21 |
2010-08-10 |
Texas Instruments Deutschland Gmbh |
Integrated SiGe NMOS and PMOS transistors
|
US8063397B2
(en)
*
|
2006-06-28 |
2011-11-22 |
Massachusetts Institute Of Technology |
Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission
|
US8143646B2
(en)
*
|
2006-08-02 |
2012-03-27 |
Intel Corporation |
Stacking fault and twin blocking barrier for integrating III-V on Si
|
DE102006046380B4
(de)
*
|
2006-09-29 |
2011-03-24 |
Globalfoundries Inc. |
Verfahren zur Herstellung eines Feldeffekttransistors mit einem elastisch verspannten Kanalgebiet und Feldeffekttransistor
|
US7569913B2
(en)
*
|
2006-10-26 |
2009-08-04 |
Atmel Corporation |
Boron etch-stop layer and methods related thereto
|
US7495250B2
(en)
*
|
2006-10-26 |
2009-02-24 |
Atmel Corporation |
Integrated circuit structures having a boron- and carbon-doped etch-stop and methods, devices and systems related thereto
|
US7550758B2
(en)
|
2006-10-31 |
2009-06-23 |
Atmel Corporation |
Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator
|
US20080157225A1
(en)
*
|
2006-12-29 |
2008-07-03 |
Suman Datta |
SRAM and logic transistors with variable height multi-gate transistor architecture
|
US8558278B2
(en)
*
|
2007-01-16 |
2013-10-15 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Strained transistor with optimized drive current and method of forming
|
US7875511B2
(en)
*
|
2007-03-13 |
2011-01-25 |
International Business Machines Corporation |
CMOS structure including differential channel stressing layer compositions
|
WO2008137645A1
(en)
*
|
2007-05-04 |
2008-11-13 |
Entegris, Inc. |
Network interface device
|
US7800150B2
(en)
*
|
2007-05-29 |
2010-09-21 |
United Microelectronics Corp. |
Semiconductor device
|
US7560354B2
(en)
*
|
2007-08-08 |
2009-07-14 |
Freescale Semiconductor, Inc. |
Process of forming an electronic device including a doped semiconductor layer
|
EP2070533B1
(de)
*
|
2007-12-11 |
2014-05-07 |
Apoteknos Para La Piel, s.l. |
Verwendung einer aus P-Hydroxyphenyl-Propionsäure entwickelten Verbindung zur Behandlung von Psoriasis
|
JP2009200107A
(ja)
*
|
2008-02-19 |
2009-09-03 |
Elpida Memory Inc |
半導体装置およびその製造方法
|
US8211786B2
(en)
*
|
2008-02-28 |
2012-07-03 |
International Business Machines Corporation |
CMOS structure including non-planar hybrid orientation substrate with planar gate electrodes and method for fabrication
|
US7999250B2
(en)
*
|
2008-03-04 |
2011-08-16 |
Hvvi Semiconductors, Inc. |
Silicon-germanium-carbon semiconductor structure
|
US8497527B2
(en)
*
|
2008-03-12 |
2013-07-30 |
Sensor Electronic Technology, Inc. |
Device having active region with lower electron concentration
|
US8017489B2
(en)
*
|
2008-03-13 |
2011-09-13 |
International Business Machines Corporation |
Field effect structure including carbon alloyed channel region and source/drain region not carbon alloyed
|
US7943961B2
(en)
*
|
2008-03-13 |
2011-05-17 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Strain bars in stressed layers of MOS devices
|
US8384122B1
(en)
*
|
2008-04-17 |
2013-02-26 |
The Regents Of The University Of California |
Tunneling transistor suitable for low voltage operation
|
US8362566B2
(en)
|
2008-06-23 |
2013-01-29 |
Intel Corporation |
Stress in trigate devices using complimentary gate fill materials
|
US7808051B2
(en)
*
|
2008-09-29 |
2010-10-05 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Standard cell without OD space effect in Y-direction
|
EP2202795A1
(de)
*
|
2008-12-24 |
2010-06-30 |
S.O.I. TEC Silicon |
Verfahren zur Herstellung eines Halbleitersubstrats und Halbleitersubstrat
|
DE102009010883B4
(de)
*
|
2009-02-27 |
2011-05-26 |
Amd Fab 36 Limited Liability Company & Co. Kg |
Einstellen eines nicht-Siliziumanteils in einer Halbleiterlegierung während der FET-Transistorherstellung mittels eines Zwischenoxidationsprozesses
|
KR20110120274A
(ko)
|
2009-03-11 |
2011-11-03 |
스미또모 가가꾸 가부시키가이샤 |
반도체 기판, 반도체 기판의 제조 방법, 전자 디바이스 및 전자 디바이스의 제조 방법
|
US8816391B2
(en)
*
|
2009-04-01 |
2014-08-26 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Source/drain engineering of devices with high-mobility channels
|
CN101853882B
(zh)
|
2009-04-01 |
2016-03-23 |
台湾积体电路制造股份有限公司 |
具有改进的开关电流比的高迁移率多面栅晶体管
|
US8455860B2
(en)
|
2009-04-30 |
2013-06-04 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Reducing source/drain resistance of III-V based transistors
|
US9768305B2
(en)
|
2009-05-29 |
2017-09-19 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Gradient ternary or quaternary multiple-gate transistor
|
US8617976B2
(en)
|
2009-06-01 |
2013-12-31 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Source/drain re-growth for manufacturing III-V based transistors
|
US8084309B2
(en)
*
|
2009-08-17 |
2011-12-27 |
International Business Machines Corporation |
Extremely thin silicon on insulator (ETSOI) complementary metal oxide semiconductor (CMOS) with in-situ doped source and drain regions formed by a single mask
|
US8193523B2
(en)
|
2009-12-30 |
2012-06-05 |
Intel Corporation |
Germanium-based quantum well devices
|
CN101819996B
(zh)
*
|
2010-04-16 |
2011-10-26 |
清华大学 |
半导体结构
|
CN101986435B
(zh)
*
|
2010-06-25 |
2012-12-19 |
中国科学院上海微系统与信息技术研究所 |
防止浮体及自加热效应的mos器件结构的制造方法
|
CN102569082B
(zh)
*
|
2010-12-24 |
2015-05-20 |
中芯国际集成电路制造(上海)有限公司 |
用于制作嵌入式锗硅应变pmos器件结构的方法
|
US8432002B2
(en)
*
|
2011-06-28 |
2013-04-30 |
International Business Machines Corporation |
Method and structure for low resistive source and drain regions in a replacement metal gate process flow
|
KR20130008281A
(ko)
*
|
2011-07-12 |
2013-01-22 |
삼성전자주식회사 |
파워소자의 제조방법
|
US8669590B2
(en)
*
|
2011-07-26 |
2014-03-11 |
Applied Materials, Inc. |
Methods and apparatus for forming silicon germanium-carbon semiconductor structures
|
US9184100B2
(en)
*
|
2011-08-10 |
2015-11-10 |
United Microelectronics Corp. |
Semiconductor device having strained fin structure and method of making the same
|
CN102956445A
(zh)
*
|
2011-08-24 |
2013-03-06 |
中芯国际集成电路制造(上海)有限公司 |
一种锗硅外延层生长方法
|
US8785291B2
(en)
*
|
2011-10-20 |
2014-07-22 |
International Business Machines Corporation |
Post-gate shallow trench isolation structure formation
|
KR101898027B1
(ko)
|
2011-11-23 |
2018-09-12 |
아콘 테크놀로지스 인코포레이티드 |
계면 원자 단일층의 삽입에 의한 ⅳ족 반도체에 대한 금속 접점의 개선
|
US8883598B2
(en)
*
|
2012-03-05 |
2014-11-11 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Thin capped channel layers of semiconductor devices and methods of forming the same
|
US8828813B2
(en)
*
|
2012-04-13 |
2014-09-09 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Replacement channels
|
CN102664166B
(zh)
*
|
2012-05-31 |
2013-11-27 |
中国科学院上海微系统与信息技术研究所 |
一种cmos器件及其制作方法
|
CN102810568B
(zh)
*
|
2012-07-16 |
2014-12-31 |
西安电子科技大学 |
一种应变Si垂直沟道PMOS集成器件及制备方法
|
CN103579308B
(zh)
*
|
2012-07-27 |
2016-08-10 |
中芯国际集成电路制造(上海)有限公司 |
Mos晶体管器件及其制造方法
|
KR101927411B1
(ko)
*
|
2012-09-28 |
2018-12-10 |
삼성전자주식회사 |
2deg와 2dhg를 이용한 반도체 소자 및 제조방법
|
CN103855001A
(zh)
*
|
2012-12-04 |
2014-06-11 |
中芯国际集成电路制造(上海)有限公司 |
晶体管及其制造方法
|
GB2530194B
(en)
*
|
2013-06-28 |
2019-12-04 |
Intel Corp |
Integrating VLSI-compatible fin structures with selective epitaxial growth and fabricating devices thereon
|
US9224822B2
(en)
|
2013-09-10 |
2015-12-29 |
Globalfoundries Inc. |
High percentage silicon germanium alloy fin formation
|
US9466670B2
(en)
*
|
2014-03-12 |
2016-10-11 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Sandwich epi channel for device enhancement
|
US9209301B1
(en)
|
2014-09-18 |
2015-12-08 |
Soitec |
Method for fabricating semiconductor layers including transistor channels having different strain states, and related semiconductor layers
|
US9219150B1
(en)
|
2014-09-18 |
2015-12-22 |
Soitec |
Method for fabricating semiconductor structures including fin structures with different strain states, and related semiconductor structures
|
US9741622B2
(en)
*
|
2015-01-29 |
2017-08-22 |
Globalfoundries Inc. |
Methods of forming NMOS and PMOS FinFET devices and the resulting product
|
WO2017111874A1
(en)
*
|
2015-12-23 |
2017-06-29 |
Intel Corporation |
Dual threshold voltage (vt) channel devices and their methods of fabrication
|
US9666486B1
(en)
|
2016-05-18 |
2017-05-30 |
International Business Machines Corporation |
Contained punch through stopper for CMOS structures on a strain relaxed buffer substrate
|
US9620611B1
(en)
|
2016-06-17 |
2017-04-11 |
Acorn Technology, Inc. |
MIS contact structure with metal oxide conductor
|
US10879240B2
(en)
*
|
2016-11-18 |
2020-12-29 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Fin field effect transistor (FinFET) device structure
|
US10170627B2
(en)
|
2016-11-18 |
2019-01-01 |
Acorn Technologies, Inc. |
Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height
|
US10056498B2
(en)
*
|
2016-11-29 |
2018-08-21 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
TWI660465B
(zh)
*
|
2017-07-28 |
2019-05-21 |
新唐科技股份有限公司 |
半導體元件及其製造方法
|
CN108766967B
(zh)
*
|
2018-05-23 |
2021-05-28 |
燕山大学 |
一种平面复合应变Si/SiGe CMOS器件及制备方法
|
US10680065B2
(en)
*
|
2018-08-01 |
2020-06-09 |
Globalfoundries Inc. |
Field-effect transistors with a grown silicon-germanium channel
|
CN113035934B
(zh)
*
|
2021-03-12 |
2022-07-05 |
浙江集迈科微电子有限公司 |
GaN基HEMT器件及其制备方法
|
CN113611743B
(zh)
*
|
2021-06-11 |
2022-06-07 |
联芯集成电路制造(厦门)有限公司 |
半导体晶体管结构及其制作方法
|
US11952268B2
(en)
*
|
2021-06-14 |
2024-04-09 |
Lawrence Semiconductor Research Laboratory, Inc. |
Engineered substrates, free-standing semiconductor microstructures, and related systems and methods
|