DE69710002D1 - Intelligente Laserdiodenanordnung - Google Patents

Intelligente Laserdiodenanordnung

Info

Publication number
DE69710002D1
DE69710002D1 DE69710002T DE69710002T DE69710002D1 DE 69710002 D1 DE69710002 D1 DE 69710002D1 DE 69710002 T DE69710002 T DE 69710002T DE 69710002 T DE69710002 T DE 69710002T DE 69710002 D1 DE69710002 D1 DE 69710002D1
Authority
DE
Germany
Prior art keywords
laser diode
diode arrangement
intelligent laser
intelligent
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69710002T
Other languages
English (en)
Other versions
DE69710002T2 (de
Inventor
Theodore S Mcminn
Dana A Marshall
Michael A Hope
Geoffrey O Heberle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cutting Edge Optronics Inc
Original Assignee
Cutting Edge Optronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cutting Edge Optronics Inc filed Critical Cutting Edge Optronics Inc
Application granted granted Critical
Publication of DE69710002D1 publication Critical patent/DE69710002D1/de
Publication of DE69710002T2 publication Critical patent/DE69710002T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0021—Degradation or life time measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
DE69710002T 1996-08-06 1997-08-04 Intelligente Laserdiodenanordnung Expired - Fee Related DE69710002T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/692,600 US5734672A (en) 1996-08-06 1996-08-06 Smart laser diode array assembly and operating method using same

Publications (2)

Publication Number Publication Date
DE69710002D1 true DE69710002D1 (de) 2002-03-14
DE69710002T2 DE69710002T2 (de) 2002-07-18

Family

ID=24781255

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69710002T Expired - Fee Related DE69710002T2 (de) 1996-08-06 1997-08-04 Intelligente Laserdiodenanordnung

Country Status (5)

Country Link
US (4) US5734672A (de)
EP (1) EP0823759B1 (de)
JP (2) JP3384950B2 (de)
DE (1) DE69710002T2 (de)
IL (1) IL121485A (de)

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5734672A (en) * 1996-08-06 1998-03-31 Cutting Edge Optronics, Inc. Smart laser diode array assembly and operating method using same
US6307871B1 (en) 1998-09-11 2001-10-23 Cutting Edge Optronics, Inc. Laser system using phase change material for thermal control
US6351478B1 (en) 1998-09-11 2002-02-26 Cutting Edge Optronics, Inc. Passively cooled solid-state laser
US6312166B1 (en) * 1998-11-25 2001-11-06 Nuvonyx, Inc. Laser diode arrays and systems including structures for permitting optical power measurement therefrom
US6999491B2 (en) * 1999-10-15 2006-02-14 Jmar Research, Inc. High intensity and high power solid state laser amplifying system and method
US6868099B1 (en) 1999-11-04 2005-03-15 Wisconsin Alumni Research Foundation Frequency-narrowed high power diode laser system with external cavity
DE19963605A1 (de) * 1999-12-23 2001-07-05 Infineon Technologies Ag Kommunikationsmodul mit parallelen Sendedioden
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
DE10018421A1 (de) * 2000-04-13 2001-10-25 Haas Laser Gmbh & Co Kg Diodenlasereinrichtung
AU2001264987A1 (en) * 2000-06-30 2002-01-14 Motorola, Inc., A Corporation Of The State Of Delware Hybrid semiconductor structure and device
JP4714967B2 (ja) * 2000-07-12 2011-07-06 三菱電機株式会社 半導体レーザ励起固体レーザ装置
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6584133B1 (en) 2000-11-03 2003-06-24 Wisconsin Alumni Research Foundation Frequency-narrowed high power diode laser array method and system
US6947456B2 (en) * 2000-12-12 2005-09-20 Agilent Technologies, Inc. Open-loop laser driver having an integrated digital controller
US6666590B2 (en) 2000-12-14 2003-12-23 Northrop Grumman Corporation High brightness laser diode coupling to multimode optical fibers
KR20020081200A (ko) * 2000-12-27 2002-10-26 미쓰비시덴키 가부시키가이샤 고체레이저장치
US7079775B2 (en) 2001-02-05 2006-07-18 Finisar Corporation Integrated memory mapped controller circuit for fiber optics transceiver
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US6822994B2 (en) 2001-06-07 2004-11-23 Northrop Grumman Corporation Solid-state laser using ytterbium-YAG composite medium
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
GB2377838A (en) * 2001-07-21 2003-01-22 Zarlink Semiconductor Ab Programmable EPROM controller for optical transmitter array
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030036217A1 (en) * 2001-08-16 2003-02-20 Motorola, Inc. Microcavity semiconductor laser coupled to a waveguide
US6583926B1 (en) * 2001-08-21 2003-06-24 Onetta, Inc. Optical amplifiers with age-based pump current limiters
US6917637B2 (en) * 2001-10-12 2005-07-12 Fuji Photo Film Co., Ltd. Cooling device for laser diodes
US20030071327A1 (en) * 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
WO2003058827A2 (en) * 2001-12-27 2003-07-17 Ceyx Technologies, Inc. Laser optics integrated control system and method of operation
ITMI20020231A1 (it) * 2002-02-08 2003-08-08 Milano Politecnico Fotorivelatore a semiconduttore organico
US6916717B2 (en) * 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
GB0217273D0 (en) * 2002-07-25 2002-09-04 Diomed Ltd Laser system
EP1389812A1 (de) * 2002-08-13 2004-02-18 Agilent Technologies Inc Montierungsanordnung für hochfrequente Elektrooptische Elemente
US6728275B2 (en) 2002-09-19 2004-04-27 Trw Inc. Fault tolerant laser diode package
US20040070312A1 (en) * 2002-10-10 2004-04-15 Motorola, Inc. Integrated circuit and process for fabricating the same
US6891866B2 (en) * 2003-01-10 2005-05-10 Agilent Technologies, Inc. Calibration of laser systems
WO2004091058A2 (en) * 2003-04-03 2004-10-21 Jmar Research, Inc. Diode-pumped solid state laser system utilizing high power diode bars
US8068739B2 (en) * 2003-06-12 2011-11-29 Finisar Corporation Modular optical device that interfaces with an external controller
US7170919B2 (en) * 2003-06-23 2007-01-30 Northrop Grumman Corporation Diode-pumped solid-state laser gain module
US7495848B2 (en) * 2003-07-24 2009-02-24 Northrop Grumman Corporation Cast laser optical bench
US9065571B2 (en) * 2003-08-29 2015-06-23 Finisar Corporation Modular controller that interfaces with modular optical device
US8891970B2 (en) * 2003-08-29 2014-11-18 Finisar Corporation Modular optical device with mixed signal interface
US8923704B2 (en) 2003-08-29 2014-12-30 Finisar Corporation Computer system with modular optical devices
US20050060114A1 (en) * 2003-08-29 2005-03-17 Finisar Testing and storing tuning information in modular optical devices
KR20060107823A (ko) * 2003-11-28 2006-10-16 오스람 옵토 세미컨덕터스 게엠베하 최적의 열적 시간 상수를 갖는 펄스 레이저 다이오드 바를위한 히트 싱크
US7295590B2 (en) * 2004-11-15 2007-11-13 Intel Corporation Method for measuring VCSEL reverse bias leakage in an optical module
EP1681750A1 (de) * 2005-01-17 2006-07-19 Fanuc Ltd Laseroszillator und Methode zur Abschätzung der Lebensdauer der Pumplichtquelle
JP2006237173A (ja) * 2005-02-23 2006-09-07 Matsushita Electric Works Ltd 光照射装置
US7305016B2 (en) * 2005-03-10 2007-12-04 Northrop Grumman Corporation Laser diode package with an internal fluid cooling channel
JP2006319893A (ja) * 2005-05-16 2006-11-24 Sumitomo Electric Ind Ltd 光モジュール
US7443413B2 (en) * 2005-10-21 2008-10-28 Hewlett-Packard Development Company, L.P. Laser diode modulator and method of controlling laser diode modulator
US7460566B2 (en) * 2006-05-02 2008-12-02 Northrop Grumman Corporation Laser power reduction without mode change
US7656915B2 (en) * 2006-07-26 2010-02-02 Northrop Grumman Space & Missions Systems Corp. Microchannel cooler for high efficiency laser diode heat extraction
US20080056314A1 (en) * 2006-08-31 2008-03-06 Northrop Grumman Corporation High-power laser-diode package system
US7586958B2 (en) 2006-09-29 2009-09-08 Northrop Grumman Corporation Electro-opto switching of unpolarized lasers
CA2679115A1 (en) * 2007-02-26 2008-09-04 Blentech Corporation Continuous food product cooling system
JP2008265149A (ja) * 2007-04-20 2008-11-06 Dainippon Screen Mfg Co Ltd 露光装置およびレーザー制御部用回路基板
JP4902513B2 (ja) * 2007-12-11 2012-03-21 シャープ株式会社 発光装置およびこれを利用した照明装置、表示装置
JP2009147441A (ja) * 2007-12-11 2009-07-02 Hitachi Cable Ltd 光送受信器
US7724791B2 (en) * 2008-01-18 2010-05-25 Northrop Grumman Systems Corporation Method of manufacturing laser diode packages and arrays
US20090259220A1 (en) * 2008-04-09 2009-10-15 Angiodynamics, Inc. Treatment Devices and Methods
JP2010008273A (ja) * 2008-06-27 2010-01-14 Maspro Denkoh Corp ミリ波撮像装置
US8159956B2 (en) 2008-07-01 2012-04-17 Finisar Corporation Diagnostics for serial communication busses
CA2732739C (en) * 2008-08-13 2014-09-09 Institut National D'optique Laser diode illuminator device and method for optically conditioning the light beam emitted by the same
DE102009005999A1 (de) 2009-01-23 2010-09-16 Trumpf Laser Gmbh + Co. Kg Verfahren zur Bestimmung der Degradation und/oder Effizienz von Lasermodulen und Lasereinheit
US8345720B2 (en) * 2009-07-28 2013-01-01 Northrop Grumman Systems Corp. Laser diode ceramic cooler having circuitry for control and feedback of laser diode performance
US8660156B2 (en) * 2009-09-03 2014-02-25 Lawrence Livermore National Security, Llc Method and system for powering and cooling semiconductor lasers
US20110248836A1 (en) * 2010-04-11 2011-10-13 Cree, Inc. Lighting apparatus with encoded information
US8516832B2 (en) * 2010-08-30 2013-08-27 B/E Aerospace, Inc. Control system for a food and beverage compartment thermoelectric cooling system
JP2013545308A (ja) * 2010-11-04 2013-12-19 バイオレイズ，インク． 高強度の先頭サブパルスを有する医療用レーザにおけるランプアップパルスパワーのための始動シーケンス
US9590388B2 (en) 2011-01-11 2017-03-07 Northrop Grumman Systems Corp. Microchannel cooler for a single laser diode emitter based system
US10178723B2 (en) 2011-06-03 2019-01-08 Cree, Inc. Systems and methods for controlling solid state lighting devices and lighting apparatus incorporating such systems and/or methods
US10098197B2 (en) 2011-06-03 2018-10-09 Cree, Inc. Lighting devices with individually compensating multi-color clusters
JP5805417B2 (ja) * 2011-03-30 2015-11-04 パナソニック デバイスＳｕｎｘ株式会社 レーザ加工装置
CA2827467C (en) * 2011-05-10 2014-09-09 Obzerv Technologies Inc. Low inductance laser diode bar mount
US9839083B2 (en) 2011-06-03 2017-12-05 Cree, Inc. Solid state lighting apparatus and circuits including LED segments configured for targeted spectral power distribution and methods of operating the same
EP2550925A1 (de) * 2011-07-28 2013-01-30 Eduardo Antonio Gomez de Diego Tragbares Mehrzwecklaserdepilationsgerät
US10043960B2 (en) 2011-11-15 2018-08-07 Cree, Inc. Light emitting diode (LED) packages and related methods
US8518814B2 (en) 2011-12-02 2013-08-27 Northrop Grumman Systems Corporation Methods of fabrication of high-density laser diode stacks
DE102012006774A1 (de) * 2012-04-04 2013-10-10 Z-Laser Optoelektronik Gmbh Beleuchtungseinrichtung mit mindestens einem, einen Halbleiterchip aufweisenden Halbleiterlaser
DE102012213670A1 (de) 2012-08-02 2014-05-22 Bayerische Motoren Werke Aktiengesellschaft Steuervorrichtung zur Ansteuerung einer Laserdiode
US8937976B2 (en) 2012-08-15 2015-01-20 Northrop Grumman Systems Corp. Tunable system for generating an optical pulse based on a double-pass semiconductor optical amplifier
US10264638B2 (en) 2013-01-15 2019-04-16 Cree, Inc. Circuits and methods for controlling solid state lighting
US10231300B2 (en) 2013-01-15 2019-03-12 Cree, Inc. Systems and methods for controlling solid state lighting during dimming and lighting apparatus incorporating such systems and/or methods
EP2962537B1 (de) 2013-02-28 2020-04-08 Lawrence Livermore National Security, LLC Kompakter und hocheffizienter hochstrom-laserdiodentreiber
CN105703215B (zh) * 2016-04-08 2019-02-05 无锡亮源激光技术有限公司 一种用于固体激光器泵浦源的半导体激光器
JP6328683B2 (ja) * 2016-04-12 2018-05-23 ファナック株式会社 小型チラーが使用可能なレーザ装置
US10215699B2 (en) * 2017-01-03 2019-02-26 Honeywell International Inc. Utilizing updraft flow in a fan-less dust sensor
US9985414B1 (en) 2017-06-16 2018-05-29 Banner Engineering Corp. Open-loop laser power-regulation
US10727649B2 (en) 2018-09-21 2020-07-28 Argo AI, LLC Monolithic series-connected edge-emitting-laser array and method of fabrication
CN113874151B (zh) * 2019-05-30 2023-04-07 松下知识产权经营株式会社 变动主要原因确定方法以及激光加工装置
WO2021024046A1 (ru) * 2020-04-16 2021-02-11 Владимир ВАХ Узел прибора терморегуляции полупроводникового лазера
KR20230042590A (ko) * 2020-08-18 2023-03-28 사이머 엘엘씨 예측성 교정 스케줄링 장치 및 방법
US11609116B2 (en) 2020-08-27 2023-03-21 Banner Engineering Corp Open-loop photodiode gain regulation

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3590248A (en) * 1965-04-13 1971-06-29 Massachusetts Inst Technology Laser arrays
US3339151A (en) * 1966-01-12 1967-08-29 Ibm Beam deflecting lasers
US3771031A (en) * 1973-03-05 1973-11-06 Texas Instruments Inc Header assembly for lasers
GB1458544A (en) * 1974-03-21 1976-12-15 Standard Telephones Cables Ltd Semiconductor laser stacks
US4393393A (en) * 1979-08-13 1983-07-12 Mcdonnell Douglas Corporation Laser diode with double sided heat sink
US4315225A (en) * 1979-08-24 1982-02-09 Mcdonnell Douglas Corporation Heat sink laser diode array
US4454602A (en) * 1982-03-26 1984-06-12 Mcdonnell Douglas Corporation Conductively cooled laser diode array
US4716568A (en) * 1985-05-07 1987-12-29 Spectra Diode Laboratories, Inc. Stacked diode laser array assembly
US4847848A (en) * 1987-02-20 1989-07-11 Sanyo Electric Co., Ltd. Semiconductor laser device
GB2203891A (en) * 1987-04-21 1988-10-26 Plessey Co Plc Semiconductor diode laser array
US4831629A (en) * 1987-09-01 1989-05-16 Xerox Corporation Incoherent, optically coupled laser arrays with increased spectral width
JPH01123493A (ja) * 1987-11-06 1989-05-16 Mitsubishi Electric Corp 半導体レーザ装置
US5256164A (en) * 1988-02-02 1993-10-26 Massachusetts Institute Of Technology Method of fabricating a microchip laser
US4901330A (en) * 1988-07-20 1990-02-13 Amoco Corporation Optically pumped laser
DE3914492A1 (de) * 1989-05-02 1990-11-08 Adlas Gmbh & Co Kg Festkoerperlaser mit pump-laserdioden
JPH0316290A (ja) * 1989-06-14 1991-01-24 Hamamatsu Photonics Kk 半導体レーザ
US5073838A (en) * 1989-12-04 1991-12-17 Ncr Corporation Method and apparatus for preventing damage to a temperature-sensitive semiconductor device
US5040187A (en) * 1990-01-03 1991-08-13 Karpinski Arthur A Monolithic laser diode array
US5284790A (en) * 1990-01-03 1994-02-08 Karpinski Arthur A Method of fabricating monolithic laser diode array
JP2656991B2 (ja) * 1990-05-15 1997-09-24 ファナック株式会社 レーザ制御装置
US5105429A (en) * 1990-07-06 1992-04-14 The United States Of America As Represented By The Department Of Energy Modular package for cooling a laser diode array
JP3035852B2 (ja) * 1990-07-18 2000-04-24 富士通株式会社 半導体レーザモジュール
US5022042A (en) * 1990-09-10 1991-06-04 General Dynamics Corp. High power laser array with stable wavelength
US5019769A (en) 1990-09-14 1991-05-28 Finisar Corporation Semiconductor laser diode controller and laser diode biasing control method
US5216263A (en) * 1990-11-29 1993-06-01 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays
KR940005764B1 (ko) * 1991-02-06 1994-06-23 삼성전자 주식회사 레이저 다이오드 어레이 및 그 제조방법
US5128951A (en) * 1991-03-04 1992-07-07 Karpinski Arthur A Laser diode array and method of fabrication thereof
JP2546080B2 (ja) * 1991-05-10 1996-10-23 富士通株式会社 半導体レーザー制御装置
DE4235891A1 (de) * 1991-10-24 1993-04-29 Mitsubishi Electric Corp Festkoerper-laser mit halbleiterlaseranregung
US5323411A (en) * 1991-11-22 1994-06-21 The Furukawa Electric Co., Ltd. Laser diode array device
US5325384A (en) * 1992-01-09 1994-06-28 Crystallume Structure and method for mounting laser diode arrays
JPH05244097A (ja) * 1992-02-12 1993-09-21 Nec Corp Ｅ／ｏアレイの駆動方式
US5337325A (en) * 1992-05-04 1994-08-09 Photon Imaging Corp Semiconductor, light-emitting devices
US5311535A (en) * 1992-07-28 1994-05-10 Karpinski Arthur A Monolithic laser diode array providing emission from a minor surface thereof
FR2694423B1 (fr) * 1992-07-30 1994-12-23 France Telecom Dispositif de contrôle de la puissance de sortie des diodes laser.
US5394426A (en) * 1992-11-13 1995-02-28 Hughes Aircraft Company Diode laser bar assembly
US5305344A (en) * 1993-04-29 1994-04-19 Opto Power Corporation Laser diode array
US5438580A (en) * 1993-09-24 1995-08-01 Opto Power Corporation Laser package and method of assembly
US5402436A (en) * 1993-12-29 1995-03-28 Xerox Corporation Nonmonolithic array structure of multiple beam diode lasers
US5526373A (en) * 1994-06-02 1996-06-11 Karpinski; Arthur A. Lens support structure for laser diode arrays
FR2724495B3 (fr) * 1994-06-07 1997-05-30 Thomson Csf Semiconducteurs Pile de barrettes de diodes laser, et son procede d'assemblage
US5504762A (en) * 1994-10-11 1996-04-02 Spectra-Physics Lasers, Inc. Laser diode system with feedback control
JPH08172235A (ja) * 1994-12-19 1996-07-02 Miyachi Technos Corp 半導体レーザの温度制御システム
US5663979A (en) * 1995-11-22 1997-09-02 Light Solutions Corporation Fiber stub end-pumped laser
US5734672A (en) * 1996-08-06 1998-03-31 Cutting Edge Optronics, Inc. Smart laser diode array assembly and operating method using same
US6027256A (en) 1997-02-07 2000-02-22 Coherent, Inc. Composite laser diode enclosure and method for making the same
US6061374A (en) 1997-02-07 2000-05-09 Coherent, Inc. Laser diode integrating enclosure and detector

Also Published As

Publication number Publication date
EP0823759A3 (de) 1999-01-07
EP0823759B1 (de) 2002-01-23
IL121485A0 (en) 1998-02-08
JPH10190134A (ja) 1998-07-21
US6385226B2 (en) 2002-05-07
JP2001203418A (ja) 2001-07-27
JP3384950B2 (ja) 2003-03-10
DE69710002T2 (de) 2002-07-18
US20020006146A1 (en) 2002-01-17
US6272164B1 (en) 2001-08-07
US6144684A (en) 2000-11-07
US5734672A (en) 1998-03-31
EP0823759A2 (de) 1998-02-11
IL121485A (en) 2000-07-26

Similar Documents

Publication Publication Date Title
DE69710002D1 (de) Intelligente Laserdiodenanordnung
DE69704000T2 (de) Diodenlaseranordnung mit hohem Wirkungsgrad
DE69817099D1 (de) Laserdrucker
DE69706468T2 (de) Diodenlaservorrichtung
DE69906177D1 (de) Laserdioden-Modul
DE59611062D1 (de) Gleichrichterdiode
DE69701275T2 (de) Lasersysteme
DE59500334D1 (de) Abstimmbare Laserdiode
DE69517039T2 (de) Hochleistungslaserdiode
DE69725783D1 (de) Halbleiterlaser
DE69702675D1 (de) Heterostrukturlaser
DE69728503D1 (de) Halbleiterlaser
DE69402733T2 (de) Diodenlaser
BR9500937A (pt) Acionador de diodo laser
DE69725537D1 (de) Halbleiterdiodenlaser
DE59202955D1 (de) Leistungsdiode.
DE69524693T2 (de) Halbleiterlaserdiode
DE69700830T2 (de) Halbleiterlaser
DE69726412D1 (de) Halbleiterlaser
DE69407448T2 (de) Gewinngeführter Diodenlaser
DE29505195U1 (de) Dioden-Laser
KR970004173A (ko) 고출력 레이저 다이오드
DE9405072U1 (de) Leistungsdiode
DE29621859U1 (de) Diodengepumpter Laser
FR2752100B1 (fr) Laser

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee