DE69709680D1 - Mehrfache örtliche oxidation zur mikrobearbeitung der oberfläche - Google Patents

Mehrfache örtliche oxidation zur mikrobearbeitung der oberfläche

Info

Publication number
DE69709680D1
DE69709680D1 DE69709680T DE69709680T DE69709680D1 DE 69709680 D1 DE69709680 D1 DE 69709680D1 DE 69709680 T DE69709680 T DE 69709680T DE 69709680 T DE69709680 T DE 69709680T DE 69709680 D1 DE69709680 D1 DE 69709680D1
Authority
DE
Germany
Prior art keywords
machining
micro
local oxidation
multiple local
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69709680T
Other languages
English (en)
Other versions
DE69709680T2 (de
Inventor
Salleh Ismail
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kavlico Corp
Original Assignee
Kavlico Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kavlico Corp filed Critical Kavlico Corp
Application granted granted Critical
Publication of DE69709680D1 publication Critical patent/DE69709680D1/de
Publication of DE69709680T2 publication Critical patent/DE69709680T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00492—Processes for surface micromachining not provided for in groups B81C1/0046 - B81C1/00484
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
DE69709680T 1996-09-20 1997-09-17 Mehrfache örtliche oxidation zur mikrobearbeitung der oberfläche Expired - Fee Related DE69709680T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/717,024 US5966617A (en) 1996-09-20 1996-09-20 Multiple local oxidation for surface micromachining
PCT/US1997/016129 WO1998012740A1 (en) 1996-09-20 1997-09-17 Multiple local oxidation for surface micromachining

Publications (2)

Publication Number Publication Date
DE69709680D1 true DE69709680D1 (de) 2002-02-21
DE69709680T2 DE69709680T2 (de) 2002-11-14

Family

ID=24880402

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69709680T Expired - Fee Related DE69709680T2 (de) 1996-09-20 1997-09-17 Mehrfache örtliche oxidation zur mikrobearbeitung der oberfläche

Country Status (7)

Country Link
US (1) US5966617A (de)
EP (1) EP0946977B1 (de)
JP (1) JP3355193B2 (de)
KR (1) KR100337231B1 (de)
CN (1) CN1236483A (de)
DE (1) DE69709680T2 (de)
WO (1) WO1998012740A1 (de)

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DE19928297A1 (de) * 1999-06-22 2000-12-28 Bosch Gmbh Robert Verfahren zur Herstellung eines Sensors mit einer Membran
US6617098B1 (en) * 1999-07-13 2003-09-09 Input/Output, Inc. Merged-mask micro-machining process
US7068870B2 (en) * 2000-10-26 2006-06-27 Shipley Company, L.L.C. Variable width waveguide for mode-matching and method for making
US6564642B1 (en) 2000-11-02 2003-05-20 Kavlico Corporation Stable differential pressure measuring system
US7251406B2 (en) * 2000-12-14 2007-07-31 Shipley Company, L.L.C. Optical waveguide termination with vertical and horizontal mode shaping
WO2002095453A2 (en) * 2000-12-14 2002-11-28 Shipley Company, L.L.C. Optical waveguide termination with vertical and horizontal mode shaping
US7158701B2 (en) * 2001-02-21 2007-01-02 Shipley Company, L.L.C. Method for making optical devices with a moving mask and optical devices made thereby
US6581468B2 (en) 2001-03-22 2003-06-24 Kavlico Corporation Independent-excitation cross-coupled differential-pressure transducer
US6912345B2 (en) * 2001-03-30 2005-06-28 Shipley Company, L.L.C. Tapered optical fiber for coupling to diffused optical waveguides
SG112005A1 (en) * 2003-12-29 2005-06-29 Sony Corp A surface treatment for use in the fabrication of mems devices
US8316717B2 (en) 2010-06-29 2012-11-27 Rogue Valley Microdevices, Inc. Wireless self-powered monolithic integrated capacitive sensor and method of manufacture
CN102446766B (zh) * 2010-10-12 2014-03-12 中芯国际集成电路制造(北京)有限公司 Mosfet形成方法
US10167191B2 (en) * 2017-04-04 2019-01-01 Kionix, Inc. Method for manufacturing a micro electro-mechanical system

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US3506502A (en) * 1967-06-05 1970-04-14 Sony Corp Method of making a glass passivated mesa semiconductor device
JPS57186339A (en) * 1981-05-13 1982-11-16 Nec Corp Etching method for silicon
JPS5855732A (ja) * 1981-09-30 1983-04-02 Hitachi Ltd 静電容量型圧力センサ
US4405970A (en) * 1981-10-13 1983-09-20 United Technologies Corporation Silicon-glass-silicon capacitive pressure transducer
US4426768A (en) * 1981-12-28 1984-01-24 United Technologies Corporation Ultra-thin microelectronic pressure sensors
JPS5939045A (ja) * 1982-08-26 1984-03-03 Toko Inc 絶縁分離集積回路用基板の製造方法
JPS6055655A (ja) * 1983-09-07 1985-03-30 Nissan Motor Co Ltd 梁構造体を有する半導体装置
US4658279A (en) * 1983-09-08 1987-04-14 Wisconsin Alumini Research Foundation Velocity saturated strain sensitive semiconductor devices
US4516316A (en) * 1984-03-27 1985-05-14 Advanced Micro Devices, Inc. Method of making improved twin wells for CMOS devices by controlling spatial separation
US4554726A (en) * 1984-04-17 1985-11-26 At&T Bell Laboratories CMOS Integrated circuit technology utilizing dual implantation of slow and fast diffusing donor ions to form the n-well
US4680606A (en) * 1984-06-04 1987-07-14 Tactile Perceptions, Inc. Semiconductor transducer
US4861420A (en) * 1984-06-04 1989-08-29 Tactile Perceptions, Inc. Method of making a semiconductor transducer
US4812888A (en) * 1984-11-11 1989-03-14 Cornell Research Foundation, Inc. Suspended gate field effect semiconductor pressure transducer device
FR2578323B1 (fr) * 1985-03-01 1987-11-20 Metravib Sa Capteur integre de grandeurs mecaniques a effet capacitif et procede de fabrication.
DE3635462A1 (de) * 1985-10-21 1987-04-23 Sharp Kk Feldeffekt-drucksensor
JPS62120051A (ja) * 1985-11-20 1987-06-01 Fuji Electric Co Ltd 半導体装置の製造方法
US4926696A (en) * 1986-11-19 1990-05-22 Massachusetts Institute Of Technology Optical micropressure transducer
US4975390A (en) * 1986-12-18 1990-12-04 Nippondenso Co. Ltd. Method of fabricating a semiconductor pressure sensor
US5095401A (en) * 1989-01-13 1992-03-10 Kopin Corporation SOI diaphragm sensor
JP2532149B2 (ja) * 1990-02-06 1996-09-11 本田技研工業株式会社 半導体センサ
US5126812A (en) * 1990-02-14 1992-06-30 The Charles Stark Draper Laboratory, Inc. Monolithic micromechanical accelerometer
DE4009090A1 (de) * 1990-03-21 1991-09-26 Bosch Gmbh Robert Verfahren zur herstellung von mehrschichtigen siliziumstrukturen
DE4012071A1 (de) * 1990-04-14 1991-10-17 Bosch Gmbh Robert Verfahren zur herstellung mikromechanischer strukturen
US5164328A (en) * 1990-06-25 1992-11-17 Motorola, Inc. Method of bump bonding and sealing an accelerometer chip onto an integrated circuit chip
US5103279A (en) * 1990-10-18 1992-04-07 Motorola, Inc. Field effect transistor with acceleration dependent gain
US5155061A (en) * 1991-06-03 1992-10-13 Allied-Signal Inc. Method for fabricating a silicon pressure sensor incorporating silicon-on-insulator structures
JP2896725B2 (ja) * 1991-12-26 1999-05-31 株式会社山武 静電容量式圧力センサ
KR950001755B1 (en) * 1992-06-10 1995-02-28 Korea Electronics Telecomm Semiconductor device isolation method using polisilicon
US5264693A (en) * 1992-07-01 1993-11-23 The United States Of America As Represented By The Secretary Of The Navy Microelectronic photomultiplier device with integrated circuitry
US5264075A (en) * 1992-11-06 1993-11-23 Ford Motor Company Fabrication methods for silicon/glass capacitive absolute pressure sensors
US5316619A (en) * 1993-02-05 1994-05-31 Ford Motor Company Capacitive surface micromachine absolute pressure sensor and method for processing
EP0619495B1 (de) * 1993-04-05 1997-05-21 Siemens Aktiengesellschaft Verfahren zur Herstellung von Tunneleffekt-Sensoren
US5374583A (en) * 1994-05-24 1994-12-20 United Microelectronic Corporation Technology for local oxidation of silicon
US5578843A (en) * 1994-10-06 1996-11-26 Kavlico Corporation Semiconductor sensor with a fusion bonded flexible structure

Also Published As

Publication number Publication date
KR20000048483A (ko) 2000-07-25
DE69709680T2 (de) 2002-11-14
WO1998012740A1 (en) 1998-03-26
JP2000508479A (ja) 2000-07-04
KR100337231B1 (ko) 2002-05-17
JP3355193B2 (ja) 2002-12-09
US5966617A (en) 1999-10-12
EP0946977B1 (de) 2002-01-16
CN1236483A (zh) 1999-11-24
EP0946977A1 (de) 1999-10-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee