DE69706590D1 - Anzeigevorrichtung mit Kaltkathoden - Google Patents

Anzeigevorrichtung mit Kaltkathoden

Info

Publication number
DE69706590D1
DE69706590D1 DE69706590T DE69706590T DE69706590D1 DE 69706590 D1 DE69706590 D1 DE 69706590D1 DE 69706590 T DE69706590 T DE 69706590T DE 69706590 T DE69706590 T DE 69706590T DE 69706590 D1 DE69706590 D1 DE 69706590D1
Authority
DE
Germany
Prior art keywords
display device
cold cathodes
cathodes
cold
display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69706590T
Other languages
English (en)
Other versions
DE69706590T2 (de
Inventor
Kiyohide Ogasawara
Takamasa Yoshikawa
Nobuyoshi Koshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=13407559&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69706590(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Publication of DE69706590D1 publication Critical patent/DE69706590D1/de
Application granted granted Critical
Publication of DE69706590T2 publication Critical patent/DE69706590T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of Metal-Insulator-Metal [MIM] type
DE69706590T 1996-03-26 1997-03-17 Anzeigevorrichtung mit Kaltkathoden Expired - Lifetime DE69706590T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06960296A JP3281533B2 (ja) 1996-03-26 1996-03-26 冷電子放出表示装置及び半導体冷電子放出素子

Publications (2)

Publication Number Publication Date
DE69706590D1 true DE69706590D1 (de) 2001-10-18
DE69706590T2 DE69706590T2 (de) 2002-07-11

Family

ID=13407559

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69706590T Expired - Lifetime DE69706590T2 (de) 1996-03-26 1997-03-17 Anzeigevorrichtung mit Kaltkathoden

Country Status (4)

Country Link
US (1) US5894189A (de)
EP (1) EP0798761B1 (de)
JP (1) JP3281533B2 (de)
DE (1) DE69706590T2 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10308166A (ja) * 1997-03-04 1998-11-17 Pioneer Electron Corp 電子放出素子及びこれを用いた表示装置
US6130503A (en) * 1997-03-04 2000-10-10 Pioneer Electronic Corporation Electron emission device and display using the same
JPH10308165A (ja) * 1997-03-04 1998-11-17 Pioneer Electron Corp 電子放出素子及びこれを用いた表示装置
JPH10312739A (ja) * 1997-03-10 1998-11-24 Pioneer Electron Corp 電子放出素子及びこれを用いた表示装置
US5990605A (en) * 1997-03-25 1999-11-23 Pioneer Electronic Corporation Electron emission device and display device using the same
US5969363A (en) * 1997-04-11 1999-10-19 Hitachi, Ltd. Method for processing electron beam sources
JPH1167063A (ja) * 1997-08-08 1999-03-09 Pioneer Electron Corp 電子放出素子及びこれを用いた表示装置
JPH1167065A (ja) * 1997-08-08 1999-03-09 Pioneer Electron Corp 電子放出素子及びこれを用いた表示装置
EP0935274B1 (de) * 1997-08-27 2003-10-01 Matsushita Electric Industrial Co., Ltd. Elektronen emittierende vorrichtung, feldemissionsanzeigevorrichtung und herstellungsverfahren derselben
TW391022B (en) 1997-10-29 2000-05-21 Mitsubishi Rayon Co Field emission electron source, method of producing the same, and use of the same
EP0926698A3 (de) * 1997-12-25 2001-10-17 Pioneer Electronic Corporation Flacher Bildschirm mit Elektronenemittern
US6794805B1 (en) 1998-05-26 2004-09-21 Matsushita Electric Works, Ltd. Field emission electron source, method of producing the same, and use of the same
US6351254B2 (en) * 1998-07-06 2002-02-26 The Regents Of The University Of California Junction-based field emission structure for field emission display
JP3698390B2 (ja) * 1998-07-29 2005-09-21 パイオニア株式会社 電子放出表示装置及び電子放出装置
JP3765671B2 (ja) * 1998-08-10 2006-04-12 パイオニア株式会社 電子放出素子及びこれを用いた電子放出表示装置
JP2000057935A (ja) * 1998-08-10 2000-02-25 Pioneer Electron Corp 電子放出発光素子及びこれを用いた表示装置
KR100338140B1 (ko) 1998-09-25 2002-05-24 이마이 기요스케 전계 방사형 전자원
TW436837B (en) * 1998-11-16 2001-05-28 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof and display using the electron source
JP2000294122A (ja) 1999-04-08 2000-10-20 Nec Corp 電界放出型冷陰極及び平面ディスプレイの製造方法
US6498426B1 (en) * 1999-04-23 2002-12-24 Matsushita Electric Works, Ltd. Field emission-type electron source and manufacturing method thereof
US6765342B1 (en) 1999-10-18 2004-07-20 Matsushita Electric Work, Ltd. Field emission-type electron source and manufacturing method thereof
JP3688970B2 (ja) * 2000-02-29 2005-08-31 株式会社日立製作所 薄膜型電子源を用いた表示装置及びその製造方法
JP2001257368A (ja) * 2000-03-09 2001-09-21 Matsushita Research Institute Tokyo Inc 光電子材料及び応用素子、並びに光電子材料の製造方法
TW497278B (en) * 2000-03-24 2002-08-01 Japan Science & Tech Corp Method for generating trajectory electron, trajectory electron solid state semiconductor element
JP3806751B2 (ja) * 2000-05-23 2006-08-09 独立行政法人科学技術振興機構 量子サイズ効果型微小電子銃の製造方法
TWI286773B (en) * 2000-10-26 2007-09-11 Matsushita Electric Works Ltd Field emission type electron source
KR100769158B1 (ko) 2000-12-04 2007-10-23 엘지.필립스 엘시디 주식회사 면 발광용 플랫램프 및 이를 구비한 액정표시장치
JP2002203499A (ja) * 2000-12-28 2002-07-19 Pioneer Electronic Corp 電子放出素子フラットパネル表示装置
US6643248B2 (en) * 2001-04-16 2003-11-04 Hewlett-Packard Development Company, L.P. Data storage device
WO2002089166A1 (fr) 2001-04-24 2002-11-07 Matsushita Electric Works, Ltd. Source d'electrons a emission de champ et son procede de production
US6771010B2 (en) 2001-04-30 2004-08-03 Hewlett-Packard Development Company, L.P. Silicon emitter with low porosity heavily doped contact layer
US6672925B2 (en) * 2001-08-17 2004-01-06 Motorola, Inc. Vacuum microelectronic device and method
GB0313317D0 (en) * 2003-06-10 2003-07-16 Tavkhelidze Avto Multiple tunnel junction thermotunnel device on the basis of ballistic electrons
US20050017624A1 (en) * 2003-07-23 2005-01-27 Thomas Novet Electron emitter with epitaxial layers
US6872964B2 (en) 2003-08-20 2005-03-29 Hewlett-Packard Development Company, L.P. Data storage device
KR100982329B1 (ko) * 2004-02-20 2010-09-15 삼성에스디아이 주식회사 전계 방출 표시 소자와 이의 제조 방법
KR100670351B1 (ko) * 2005-08-24 2007-01-16 삼성에스디아이 주식회사 플라즈마 디스플레이 패널

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5430300A (en) * 1991-07-18 1995-07-04 The Texas A&M University System Oxidized porous silicon field emission devices
GB9216647D0 (en) * 1992-08-05 1992-09-16 Isis Innovation Cold cathodes
JP3243471B2 (ja) * 1994-09-16 2002-01-07 三菱電機株式会社 電子放出素子の製造方法
JP3226745B2 (ja) * 1995-03-09 2001-11-05 科学技術振興事業団 半導体冷電子放出素子及びこれを用いた装置

Also Published As

Publication number Publication date
EP0798761B1 (de) 2001-09-12
EP0798761A1 (de) 1997-10-01
DE69706590T2 (de) 2002-07-11
US5894189A (en) 1999-04-13
JP3281533B2 (ja) 2002-05-13
JPH09259795A (ja) 1997-10-03

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Legal Events

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8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)