DE69704000D1 - Diodenlaseranordnung mit hohem Wirkungsgrad - Google Patents

Diodenlaseranordnung mit hohem Wirkungsgrad

Info

Publication number
DE69704000D1
DE69704000D1 DE69704000T DE69704000T DE69704000D1 DE 69704000 D1 DE69704000 D1 DE 69704000D1 DE 69704000 T DE69704000 T DE 69704000T DE 69704000 T DE69704000 T DE 69704000T DE 69704000 D1 DE69704000 D1 DE 69704000D1
Authority
DE
Germany
Prior art keywords
high efficiency
diode laser
laser arrangement
arrangement
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69704000T
Other languages
English (en)
Other versions
DE69704000T2 (de
Inventor
Dana A Marshall
Herbert G Koenig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cutting Edge Optronics Inc
Original Assignee
Cutting Edge Optronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cutting Edge Optronics Inc filed Critical Cutting Edge Optronics Inc
Application granted granted Critical
Publication of DE69704000D1 publication Critical patent/DE69704000D1/de
Publication of DE69704000T2 publication Critical patent/DE69704000T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • H01S5/4043Edge-emitting structures with vertically stacked active layers
    • H01S5/405Two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02476Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02355Fixing laser chips on mounts
    • H01S5/0237Fixing laser chips on mounts by soldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02469Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018Lasers electrically in series
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/91Diode arrays, e.g. diode read-only memory array
DE69704000T 1996-04-30 1997-04-23 Diodenlaseranordnung mit hohem Wirkungsgrad Expired - Fee Related DE69704000T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/641,235 US5898211A (en) 1996-04-30 1996-04-30 Laser diode package with heat sink

Publications (2)

Publication Number Publication Date
DE69704000D1 true DE69704000D1 (de) 2001-03-08
DE69704000T2 DE69704000T2 (de) 2001-05-31

Family

ID=24571532

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69704000T Expired - Fee Related DE69704000T2 (de) 1996-04-30 1997-04-23 Diodenlaseranordnung mit hohem Wirkungsgrad

Country Status (5)

Country Link
US (2) US5898211A (de)
EP (1) EP0805527B1 (de)
JP (1) JP3306335B2 (de)
DE (1) DE69704000T2 (de)
IL (1) IL120719A (de)

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2130221C1 (ru) * 1996-04-23 1999-05-10 Акционерное общество закрытого типа "Энергомаштехника" Матрица лазерных диодов
US6229831B1 (en) * 1997-12-08 2001-05-08 Coherent, Inc. Bright diode-laser light-source
US5913108A (en) 1998-04-30 1999-06-15 Cutting Edge Optronics, Inc. Laser diode packaging
US6181530B1 (en) * 1998-07-31 2001-01-30 Seagate Technology Llc Heat sink for a voice coil motor
US6268653B1 (en) * 1999-03-04 2001-07-31 Opto Power Corporation Semiconductor laser diode multi-chip module
US6636538B1 (en) * 1999-03-29 2003-10-21 Cutting Edge Optronics, Inc. Laser diode packaging
US6449295B1 (en) 1999-11-23 2002-09-10 Litton Systems, Inc. Method and system for generating laser light
US6508595B1 (en) 2000-05-11 2003-01-21 International Business Machines Corporation Assembly of opto-electronic module with improved heat sink
US20020110165A1 (en) * 2001-02-14 2002-08-15 Filgas David M. Method and system for cooling at least one laser diode with a cooling fluid
US6481874B2 (en) 2001-03-29 2002-11-19 Gelcore Llc Heat dissipation system for high power LED lighting system
US6600633B2 (en) 2001-05-10 2003-07-29 Seagate Technology Llc Thermally conductive overmold for a disc drive actuator assembly
US6636539B2 (en) * 2001-05-25 2003-10-21 Novalux, Inc. Method and apparatus for controlling thermal variations in an optical device
US6822994B2 (en) 2001-06-07 2004-11-23 Northrop Grumman Corporation Solid-state laser using ytterbium-YAG composite medium
US7364565B2 (en) 2001-07-27 2008-04-29 Ramot At Tel Aviv University Ltd. Controlled enzymatic removal and retrieval of cells
US6667999B2 (en) * 2001-08-17 2003-12-23 Textron Corporation Cooling of high power laser systems
US6922422B2 (en) * 2001-11-02 2005-07-26 Frank H. Peters Heat isolation and dissipation structures for optical components in photonic integrated circuits (PICs) and an optical transport network using the same
DE10209374A1 (de) * 2002-03-02 2003-07-31 Rofin Sinar Laser Gmbh Diodenlaseranordnung mit einer Mehrzahl von elektrisch in Reihe geschalteten Diodenlasern
US6728275B2 (en) * 2002-09-19 2004-04-27 Trw Inc. Fault tolerant laser diode package
KR100893974B1 (ko) * 2003-02-19 2009-04-20 허니웰 인터내셔날 인코포레이티드 열적 상호접속 시스템, 그 제조 방법 및 사용법
EP1616337A2 (de) * 2003-04-02 2006-01-18 Honeywell International, Inc. Thermische verbindungs- und grenzflächensysteme, herstellungsverfahren und verwendungen davon
EP1636839A2 (de) * 2003-06-06 2006-03-22 Honeywell International Inc. Thermisches verbindungssystem und verfahren zu seiner herstellung
US7170919B2 (en) * 2003-06-23 2007-01-30 Northrop Grumman Corporation Diode-pumped solid-state laser gain module
US7495848B2 (en) * 2003-07-24 2009-02-24 Northrop Grumman Corporation Cast laser optical bench
JP4177192B2 (ja) * 2003-08-05 2008-11-05 株式会社日立ハイテクノロジーズ プラズマエッチング装置およびプラズマエッチング方法
JP4037815B2 (ja) 2003-09-29 2008-01-23 オムロンレーザーフロント株式会社 レーザダイオードモジュール、レーザ装置、及びレーザ加工装置
US7189292B2 (en) 2003-10-31 2007-03-13 International Business Machines Corporation Self-encapsulated silver alloys for interconnects
CN1300903C (zh) * 2004-03-23 2007-02-14 中国科学院长春光学精密机械与物理研究所 复合热沉半导体激光器结构及制备方法
US7352785B2 (en) * 2004-04-30 2008-04-01 Richard L. Fork Solid state laser medium and laser medium heat transfer method
JP4811629B2 (ja) * 2004-07-12 2011-11-09 ソニー株式会社 半導体レーザ装置
US7590155B2 (en) * 2004-08-05 2009-09-15 Jian Liu Hybrid high power laser to achieve high repetition rate and high pulse energy
DE102004057454B4 (de) 2004-11-25 2009-10-22 Jenoptik Laserdiode Gmbh Diodenlasermodul und Verfahren zu dessen Herstellung
CN1300902C (zh) * 2005-01-28 2007-02-14 中国科学院长春光学精密机械与物理研究所 半导体激光线阵及迭阵条双面烧结方法及装置
US7305016B2 (en) * 2005-03-10 2007-12-04 Northrop Grumman Corporation Laser diode package with an internal fluid cooling channel
EP1889342A2 (de) * 2005-05-13 2008-02-20 Lasag Ag Eine laservorrichtung bildender laserdiodenstapel
US20060285571A1 (en) * 2005-06-20 2006-12-21 Yunlong Sun Diode-pumped, solid-state laser with chip-shaped laser medium and heat sink
JP4659565B2 (ja) * 2005-09-02 2011-03-30 浜松ホトニクス株式会社 半導体レーザモジュール及び半導体レーザスタック
JP4659564B2 (ja) * 2005-09-02 2011-03-30 浜松ホトニクス株式会社 半導体レーザモジュール、半導体レーザスタック及び半導体レーザモジュールの製造方法
US20070217467A1 (en) * 2006-03-20 2007-09-20 Nlight Photonics Corporation Laser diode package utilizing a laser diode stack
US20070116071A1 (en) * 2005-11-22 2007-05-24 Nlight Photonics Corporation Modular diode laser assembly
US7586963B2 (en) * 2005-11-22 2009-09-08 Nlight Photonics Corporation Modular diode laser assembly
US20070116077A1 (en) * 2005-11-22 2007-05-24 Nlight Photonics Corporation Vertically displaced stack of multi-mode single emitter laser diodes
US20070217471A1 (en) * 2006-03-20 2007-09-20 Nlight Photonics Corporation Laser diode stack utilizing a non-conductive submount
US20070217468A1 (en) * 2006-03-20 2007-09-20 Nlight Photonics Corporation Laser diode package utilizing a laser diode stack
US20070115617A1 (en) * 2005-11-22 2007-05-24 Nlight Photonics Corporation Modular assembly utilizing laser diode subassemblies with winged mounting blocks
EP1811617A1 (de) 2006-01-18 2007-07-25 JENOPTIK Laserdiode GmbH Träger für eine vertikale Anordnung von Laserdiodenbarren mit Anschlag
US20070217470A1 (en) * 2006-03-20 2007-09-20 Nlight Photonics Corporation Laser diode stack end-pumped solid state laser
US20070217469A1 (en) * 2006-03-20 2007-09-20 Nlight Photonics Corporation Laser diode stack side-pumped solid state laser
US7949022B2 (en) * 2006-04-27 2011-05-24 Lockheed Martin Corporation Diode pumping of a laser gain medium
US7460566B2 (en) * 2006-05-02 2008-12-02 Northrop Grumman Corporation Laser power reduction without mode change
US7656915B2 (en) * 2006-07-26 2010-02-02 Northrop Grumman Space & Missions Systems Corp. Microchannel cooler for high efficiency laser diode heat extraction
US20080056314A1 (en) * 2006-08-31 2008-03-06 Northrop Grumman Corporation High-power laser-diode package system
US7586958B2 (en) 2006-09-29 2009-09-08 Northrop Grumman Corporation Electro-opto switching of unpolarized lasers
NZ575900A (en) 2006-10-02 2012-04-27 Labtec Gmbh Non-mucoadhesive film dosage forms
WO2009036919A2 (de) * 2007-09-13 2009-03-26 Dirk Lorenzen Verfahren zur herstellung wenigstens einer strahlungsquelle
US7841509B2 (en) * 2007-10-23 2010-11-30 Gm Global Technology Operations, Inc. Method of brazing with two different braze compositions
US7724791B2 (en) * 2008-01-18 2010-05-25 Northrop Grumman Systems Corporation Method of manufacturing laser diode packages and arrays
US8345720B2 (en) 2009-07-28 2013-01-01 Northrop Grumman Systems Corp. Laser diode ceramic cooler having circuitry for control and feedback of laser diode performance
JP5566268B2 (ja) * 2010-11-19 2014-08-06 新光電気工業株式会社 発光装置及びパッケージ部品
US20120160958A1 (en) * 2010-12-24 2012-06-28 Stewart Gregory D Power and cooling arrangement
US9590388B2 (en) 2011-01-11 2017-03-07 Northrop Grumman Systems Corp. Microchannel cooler for a single laser diode emitter based system
RU2475363C2 (ru) * 2011-03-22 2013-02-20 Анатолий Петрович Бесплеменнов Принтер на линейке лазерных кристаллов для этикеток и упаковки
WO2012135314A1 (en) 2011-03-29 2012-10-04 Rolls-Royce North American Technologies Inc. Vehicle system
JP2012248812A (ja) * 2011-05-31 2012-12-13 Sumitomo Electric Ind Ltd 半導体光集積素子の製造方法
US8518814B2 (en) 2011-12-02 2013-08-27 Northrop Grumman Systems Corporation Methods of fabrication of high-density laser diode stacks
US8891579B1 (en) 2011-12-16 2014-11-18 Nlight Photonics Corporation Laser diode apparatus utilizing reflecting slow axis collimators
US8937976B2 (en) 2012-08-15 2015-01-20 Northrop Grumman Systems Corp. Tunable system for generating an optical pulse based on a double-pass semiconductor optical amplifier
RU2544875C2 (ru) * 2013-07-23 2015-03-20 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") Матрица лазерных диодов и способ ее изготовления
US9705289B2 (en) 2014-03-06 2017-07-11 Nlight, Inc. High brightness multijunction diode stacking
WO2015134931A1 (en) 2014-03-06 2015-09-11 Nlight Photonics Corporation High brightness multijunction diode stacking
US10761276B2 (en) 2015-05-15 2020-09-01 Nlight, Inc. Passively aligned crossed-cylinder objective assembly
DE102015013511B3 (de) * 2015-10-15 2017-03-16 Jenoptik Laser Gmbh Laserstrahlungsquelle und Verfahren zur Herstellung einer Laserstrahlungsquelle und Verwendung eines Lötprozesses
US20170117683A1 (en) * 2015-10-22 2017-04-27 Northrup Grumman Space and Mission Systems Corp. Thermally conductive, current carrying, electrically isolated submount for laser diode arrays
EP3417340A1 (de) 2016-02-16 2018-12-26 NLIGHT, Inc. Passiv ausgerichtetes einzelelementteleskop für verbesserte pakethelligkeit
CN109075524B (zh) 2016-03-18 2021-09-03 恩耐公司 用以提高亮度的光谱复用二极管泵浦模块
JP6928440B2 (ja) * 2016-11-24 2021-09-01 浜松ホトニクス株式会社 半導体レーザ装置
EP3560048B1 (de) 2016-12-23 2023-08-09 NLIGHT, Inc. Günstiges gehäuse für einen optischen pumplaser
CN106684707A (zh) * 2017-03-13 2017-05-17 西安炬光科技股份有限公司 一种粘接型半导体激光器叠阵及其制备方法
WO2018200587A1 (en) 2017-04-24 2018-11-01 Nlight, Inc. Low swap two-phase cooled diode laser package
WO2019157092A1 (en) 2018-02-06 2019-08-15 Nlight, Inc. Diode laser apparatus with fac lens out-of-plane beam steering
DE102019113714A1 (de) * 2019-05-23 2020-11-26 Rogers Germany Gmbh Adapterelement zum Anbinden eines Elektronikbauteils an ein Kühlkörperelement, System mit einem solchen Adapterelement und Verfahren zum Herstellen eines solchen Adapterelements
US11557874B2 (en) * 2021-05-18 2023-01-17 Trumpf Photonics, Inc. Double-sided cooling of laser diodes
US11876343B2 (en) 2021-05-18 2024-01-16 Trumpf Photonics, Inc. Laser diode packaging platforms

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3590248A (en) * 1965-04-13 1971-06-29 Massachusetts Inst Technology Laser arrays
US3339151A (en) * 1966-01-12 1967-08-29 Ibm Beam deflecting lasers
US3771031A (en) * 1973-03-05 1973-11-06 Texas Instruments Inc Header assembly for lasers
GB1458544A (en) * 1974-03-21 1976-12-15 Standard Telephones Cables Ltd Semiconductor laser stacks
DE2542174C3 (de) * 1974-09-21 1980-02-14 Nippon Electric Co., Ltd., Tokio Halbleiterlaservorrichtung
JPS5565450A (en) * 1978-11-10 1980-05-16 Hitachi Ltd Resin-mold type semiconductor device
US4393393A (en) * 1979-08-13 1983-07-12 Mcdonnell Douglas Corporation Laser diode with double sided heat sink
US4315225A (en) * 1979-08-24 1982-02-09 Mcdonnell Douglas Corporation Heat sink laser diode array
US4383270A (en) * 1980-07-10 1983-05-10 Rca Corporation Structure for mounting a semiconductor chip to a metal core substrate
US4573067A (en) * 1981-03-02 1986-02-25 The Board Of Trustees Of The Leland Stanford Junior University Method and means for improved heat removal in compact semiconductor integrated circuits
US4454602A (en) * 1982-03-26 1984-06-12 Mcdonnell Douglas Corporation Conductively cooled laser diode array
JPS58209147A (ja) * 1982-05-31 1983-12-06 Toshiba Corp 樹脂封止型半導体装置
JPS5967639A (ja) * 1982-10-12 1984-04-17 Toshiba Corp 半導体樹脂封止用金型
JPS60211992A (ja) * 1984-04-06 1985-10-24 Hitachi Ltd 半導体レ−ザ装置
US4716568A (en) * 1985-05-07 1987-12-29 Spectra Diode Laboratories, Inc. Stacked diode laser array assembly
US4730324A (en) * 1986-10-02 1988-03-08 General Electric Company Method and apparatus for compensating for wave front distortion in a slab laser
US4847848A (en) * 1987-02-20 1989-07-11 Sanyo Electric Co., Ltd. Semiconductor laser device
GB2203891A (en) * 1987-04-21 1988-10-26 Plessey Co Plc Semiconductor diode laser array
US4831629A (en) * 1987-09-01 1989-05-16 Xerox Corporation Incoherent, optically coupled laser arrays with increased spectral width
US4782222A (en) * 1987-09-03 1988-11-01 Power Spectra Bulk avalanche semiconductor switch using partial light penetration and inducing field compression
DE3732433A1 (de) * 1987-09-26 1989-04-06 Standard Elektrik Lorenz Ag Lasermodul und verfahren zum ankoppeln einer glasfaser
US4899204A (en) * 1987-12-01 1990-02-06 General Electric Company High voltage switch structure with light responsive diode stack
US5256164A (en) * 1988-02-02 1993-10-26 Massachusetts Institute Of Technology Method of fabricating a microchip laser
US5115445A (en) * 1988-02-02 1992-05-19 Massachusetts Institute Of Technology Microchip laser array
US4877641A (en) * 1988-05-31 1989-10-31 Olin Corporation Process for plasma depositing silicon nitride and silicon dioxide films onto a substrate
US4901330A (en) * 1988-07-20 1990-02-13 Amoco Corporation Optically pumped laser
US4881237A (en) * 1988-08-26 1989-11-14 Massachusetts Institute Of Technology Hybrid two-dimensional surface-emitting laser arrays
DE3914492A1 (de) * 1989-05-02 1990-11-08 Adlas Gmbh & Co Kg Festkoerperlaser mit pump-laserdioden
JPH036875A (ja) * 1989-06-05 1991-01-14 Matsushita Electric Ind Co Ltd 半導体レーザ
US4949346A (en) * 1989-08-14 1990-08-14 Allied-Signal Inc. Conductively cooled, diode-pumped solid-state slab laser
US5099214A (en) * 1989-09-27 1992-03-24 General Electric Company Optically activated waveguide type phase shifter and attenuator
US5073838A (en) * 1989-12-04 1991-12-17 Ncr Corporation Method and apparatus for preventing damage to a temperature-sensitive semiconductor device
JPH03203386A (ja) * 1989-12-29 1991-09-05 Hoya Corp コンポジット・スラブ型レーザ媒体
US5284790A (en) * 1990-01-03 1994-02-08 Karpinski Arthur A Method of fabricating monolithic laser diode array
US5040187A (en) * 1990-01-03 1991-08-13 Karpinski Arthur A Monolithic laser diode array
US5031187A (en) * 1990-02-14 1991-07-09 Bell Communications Research, Inc. Planar array of vertical-cavity, surface-emitting lasers
JP2750196B2 (ja) * 1990-03-20 1998-05-13 トキコ株式会社 容積式流量計
EP0458469A1 (de) * 1990-05-24 1991-11-27 Nippon Steel Corporation Verbundleiterrahmen und ihn verwendende Halbleitervorrichtung
US5156999A (en) * 1990-06-08 1992-10-20 Wai-Hon Lee Packaging method for semiconductor laser/detector devices
US5105429A (en) * 1990-07-06 1992-04-14 The United States Of America As Represented By The Department Of Energy Modular package for cooling a laser diode array
JP3035852B2 (ja) * 1990-07-18 2000-04-24 富士通株式会社 半導体レーザモジュール
US5022042A (en) * 1990-09-10 1991-06-04 General Dynamics Corp. High power laser array with stable wavelength
US5216263A (en) * 1990-11-29 1993-06-01 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays
KR940005764B1 (ko) * 1991-02-06 1994-06-23 삼성전자 주식회사 레이저 다이오드 어레이 및 그 제조방법
US5128951A (en) * 1991-03-04 1992-07-07 Karpinski Arthur A Laser diode array and method of fabrication thereof
US5099488A (en) * 1991-03-27 1992-03-24 Spectra Diode Laboratories, Inc. Ribbed submounts for two dimensional stacked laser array
JPH04359207A (ja) * 1991-06-05 1992-12-11 Hitachi Ltd レーザダイオード結合装置及びその組立方法
US5351259A (en) * 1991-10-24 1994-09-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser-pumped solid-state laser with plural beam output
US5323411A (en) * 1991-11-22 1994-06-21 The Furukawa Electric Co., Ltd. Laser diode array device
US5325384A (en) * 1992-01-09 1994-06-28 Crystallume Structure and method for mounting laser diode arrays
JPH05244097A (ja) * 1992-02-12 1993-09-21 Nec Corp E/oアレイの駆動方式
US5337325A (en) * 1992-05-04 1994-08-09 Photon Imaging Corp Semiconductor, light-emitting devices
US5311535A (en) * 1992-07-28 1994-05-10 Karpinski Arthur A Monolithic laser diode array providing emission from a minor surface thereof
US5311536A (en) * 1992-09-22 1994-05-10 Xerox Corporation Vertically stacked, accurately positioned diode lasers
US5394426A (en) * 1992-11-13 1995-02-28 Hughes Aircraft Company Diode laser bar assembly
US5305344A (en) * 1993-04-29 1994-04-19 Opto Power Corporation Laser diode array
US5513198A (en) * 1993-07-14 1996-04-30 Corning Incorporated Packaging of high power semiconductor lasers
US5438580A (en) * 1993-09-24 1995-08-01 Opto Power Corporation Laser package and method of assembly
US5485482A (en) * 1993-12-08 1996-01-16 Selker; Mark D. Method for design and construction of efficient, fundamental transverse mode selected, diode pumped, solid state lasers
US5402436A (en) * 1993-12-29 1995-03-28 Xerox Corporation Nonmonolithic array structure of multiple beam diode lasers
US5388755A (en) * 1994-01-28 1995-02-14 Polaroid Corp. Apparatus and method of bonding isolation grooves of a ridge wave-guide laser diode
US5394427A (en) * 1994-04-29 1995-02-28 Cutting Edge Optronics, Inc. Housing for a slab laser pumped by a close-coupled light source
US5526373A (en) * 1994-06-02 1996-06-11 Karpinski; Arthur A. Lens support structure for laser diode arrays
US5764675A (en) * 1994-06-30 1998-06-09 Juhala; Roland E. Diode laser array
US5663979A (en) * 1995-11-22 1997-09-02 Light Solutions Corporation Fiber stub end-pumped laser
US5781573A (en) * 1996-12-05 1998-07-14 Northrop Grumman Corporation High power solid state laser and method of increasing power using same
US5835518A (en) * 1997-01-31 1998-11-10 Star Medical Technologies, Inc. Laser diode array packaging

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JP3306335B2 (ja) 2002-07-24
EP0805527A3 (de) 1999-01-07
US5898211A (en) 1999-04-27
IL120719A (en) 2001-01-11
JPH1041580A (ja) 1998-02-13
EP0805527B1 (de) 2001-01-31
EP0805527A2 (de) 1997-11-05
IL120719A0 (en) 1997-08-14
US5985684A (en) 1999-11-16
DE69704000T2 (de) 2001-05-31

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