DE69704000D1 - Diodenlaseranordnung mit hohem Wirkungsgrad - Google Patents
Diodenlaseranordnung mit hohem WirkungsgradInfo
- Publication number
- DE69704000D1 DE69704000D1 DE69704000T DE69704000T DE69704000D1 DE 69704000 D1 DE69704000 D1 DE 69704000D1 DE 69704000 T DE69704000 T DE 69704000T DE 69704000 T DE69704000 T DE 69704000T DE 69704000 D1 DE69704000 D1 DE 69704000D1
- Authority
- DE
- Germany
- Prior art keywords
- high efficiency
- diode laser
- laser arrangement
- arrangement
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
- H01S5/405—Two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/91—Diode arrays, e.g. diode read-only memory array
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/641,235 US5898211A (en) | 1996-04-30 | 1996-04-30 | Laser diode package with heat sink |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69704000D1 true DE69704000D1 (de) | 2001-03-08 |
DE69704000T2 DE69704000T2 (de) | 2001-05-31 |
Family
ID=24571532
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69704000T Expired - Fee Related DE69704000T2 (de) | 1996-04-30 | 1997-04-23 | Diodenlaseranordnung mit hohem Wirkungsgrad |
Country Status (5)
Country | Link |
---|---|
US (2) | US5898211A (de) |
EP (1) | EP0805527B1 (de) |
JP (1) | JP3306335B2 (de) |
DE (1) | DE69704000T2 (de) |
IL (1) | IL120719A (de) |
Families Citing this family (82)
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US6268653B1 (en) * | 1999-03-04 | 2001-07-31 | Opto Power Corporation | Semiconductor laser diode multi-chip module |
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US6481874B2 (en) | 2001-03-29 | 2002-11-19 | Gelcore Llc | Heat dissipation system for high power LED lighting system |
US6600633B2 (en) | 2001-05-10 | 2003-07-29 | Seagate Technology Llc | Thermally conductive overmold for a disc drive actuator assembly |
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US7364565B2 (en) | 2001-07-27 | 2008-04-29 | Ramot At Tel Aviv University Ltd. | Controlled enzymatic removal and retrieval of cells |
US6667999B2 (en) * | 2001-08-17 | 2003-12-23 | Textron Corporation | Cooling of high power laser systems |
US6922422B2 (en) * | 2001-11-02 | 2005-07-26 | Frank H. Peters | Heat isolation and dissipation structures for optical components in photonic integrated circuits (PICs) and an optical transport network using the same |
DE10209374A1 (de) * | 2002-03-02 | 2003-07-31 | Rofin Sinar Laser Gmbh | Diodenlaseranordnung mit einer Mehrzahl von elektrisch in Reihe geschalteten Diodenlasern |
US6728275B2 (en) * | 2002-09-19 | 2004-04-27 | Trw Inc. | Fault tolerant laser diode package |
KR100893974B1 (ko) * | 2003-02-19 | 2009-04-20 | 허니웰 인터내셔날 인코포레이티드 | 열적 상호접속 시스템, 그 제조 방법 및 사용법 |
EP1616337A2 (de) * | 2003-04-02 | 2006-01-18 | Honeywell International, Inc. | Thermische verbindungs- und grenzflächensysteme, herstellungsverfahren und verwendungen davon |
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DE102004057454B4 (de) | 2004-11-25 | 2009-10-22 | Jenoptik Laserdiode Gmbh | Diodenlasermodul und Verfahren zu dessen Herstellung |
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US7305016B2 (en) * | 2005-03-10 | 2007-12-04 | Northrop Grumman Corporation | Laser diode package with an internal fluid cooling channel |
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JP4659565B2 (ja) * | 2005-09-02 | 2011-03-30 | 浜松ホトニクス株式会社 | 半導体レーザモジュール及び半導体レーザスタック |
JP4659564B2 (ja) * | 2005-09-02 | 2011-03-30 | 浜松ホトニクス株式会社 | 半導体レーザモジュール、半導体レーザスタック及び半導体レーザモジュールの製造方法 |
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-
1996
- 1996-04-30 US US08/641,235 patent/US5898211A/en not_active Expired - Fee Related
-
1997
- 1997-04-23 EP EP97106741A patent/EP0805527B1/de not_active Expired - Lifetime
- 1997-04-23 DE DE69704000T patent/DE69704000T2/de not_active Expired - Fee Related
- 1997-04-24 IL IL12071997A patent/IL120719A/xx not_active IP Right Cessation
- 1997-04-30 JP JP11291097A patent/JP3306335B2/ja not_active Expired - Fee Related
-
1999
- 1999-04-05 US US09/286,145 patent/US5985684A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3306335B2 (ja) | 2002-07-24 |
EP0805527A3 (de) | 1999-01-07 |
US5898211A (en) | 1999-04-27 |
IL120719A (en) | 2001-01-11 |
JPH1041580A (ja) | 1998-02-13 |
EP0805527B1 (de) | 2001-01-31 |
EP0805527A2 (de) | 1997-11-05 |
IL120719A0 (en) | 1997-08-14 |
US5985684A (en) | 1999-11-16 |
DE69704000T2 (de) | 2001-05-31 |
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