DE69623720T2 - Verfahren zum Aufräumen eines Flash-Speichers mit Übersetzungsschicht - Google Patents

Verfahren zum Aufräumen eines Flash-Speichers mit Übersetzungsschicht

Info

Publication number
DE69623720T2
DE69623720T2 DE69623720T DE69623720T DE69623720T2 DE 69623720 T2 DE69623720 T2 DE 69623720T2 DE 69623720 T DE69623720 T DE 69623720T DE 69623720 T DE69623720 T DE 69623720T DE 69623720 T2 DE69623720 T2 DE 69623720T2
Authority
DE
Germany
Prior art keywords
cleaning
flash memory
translation layer
translation
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69623720T
Other languages
English (en)
Other versions
DE69623720D1 (de
Inventor
Detlef Jenett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SCM Microsystems Inc
Original Assignee
SCM Microsystems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SCM Microsystems Inc filed Critical SCM Microsystems Inc
Publication of DE69623720D1 publication Critical patent/DE69623720D1/de
Application granted granted Critical
Publication of DE69623720T2 publication Critical patent/DE69623720T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/0223User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023Free address space management
    • G06F12/0238Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72Details relating to flash memory management
    • G06F2212/7205Cleaning, compaction, garbage collection, erase control

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
DE69623720T 1995-10-27 1996-10-21 Verfahren zum Aufräumen eines Flash-Speichers mit Übersetzungsschicht Expired - Fee Related DE69623720T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/549,476 US5867641A (en) 1995-10-27 1995-10-27 Flash translation layer cleanup system and method

Publications (2)

Publication Number Publication Date
DE69623720D1 DE69623720D1 (de) 2002-10-24
DE69623720T2 true DE69623720T2 (de) 2003-04-30

Family

ID=24193177

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69623720T Expired - Fee Related DE69623720T2 (de) 1995-10-27 1996-10-21 Verfahren zum Aufräumen eines Flash-Speichers mit Übersetzungsschicht

Country Status (3)

Country Link
US (1) US5867641A (de)
EP (1) EP0770959B1 (de)
DE (1) DE69623720T2 (de)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2317720A (en) * 1996-09-30 1998-04-01 Nokia Mobile Phones Ltd Managing Flash memory
US6260102B1 (en) * 1996-12-26 2001-07-10 Intel Corporation Interface for flash EEPROM memory arrays
US6279069B1 (en) 1996-12-26 2001-08-21 Intel Corporation Interface for flash EEPROM memory arrays
US5937425A (en) * 1997-10-16 1999-08-10 M-Systems Flash Disk Pioneers Ltd. Flash file system optimized for page-mode flash technologies
US6795890B1 (en) * 1999-02-19 2004-09-21 Mitsubishi Denki Kabushiki Kaisha Data storage method, and data processing device using an erasure block buffer and write buffer for writing and erasing data in memory
US6571312B1 (en) * 1999-02-19 2003-05-27 Mitsubishi Denki Kabushiki Kaisha Data storage method and data processing device using an erasure block buffer and write buffer for writing and erasing data in memory
KR100577380B1 (ko) * 1999-09-29 2006-05-09 삼성전자주식회사 플래시 메모리와 그 제어 방법
US6578054B1 (en) 1999-10-04 2003-06-10 Microsoft Corporation Method and system for supporting off-line mode of operation and synchronization using resource state information
BR0007239B1 (pt) * 1999-10-21 2014-03-18 Panasonic Corp Aparelho de acesso á placa de memória semicondutora, placa de memória semicondutora e método de inicialização.
US6643731B2 (en) * 1999-12-31 2003-11-04 Texas Instruments Incorporated Low cost memory management that resists power interruption
US20020091965A1 (en) * 2000-12-22 2002-07-11 Mark Moshayedi System and method for early detection of impending failure of a data storage system
KR100365725B1 (ko) 2000-12-27 2002-12-26 한국전자통신연구원 플래시 메모리를 이용한 파일 시스템에서 등급별 지움정책 및 오류 복구 방법
US6760805B2 (en) * 2001-09-05 2004-07-06 M-Systems Flash Disk Pioneers Ltd. Flash management system for large page size
US6909910B2 (en) * 2002-02-01 2005-06-21 Microsoft Corporation Method and system for managing changes to a contact database
US6621746B1 (en) 2002-02-27 2003-09-16 Microsoft Corporation Monitoring entropic conditions of a flash memory device as an indicator for invoking erasure operations
US7010662B2 (en) * 2002-02-27 2006-03-07 Microsoft Corporation Dynamic data structures for tracking file system free space in a flash memory device
US7085879B2 (en) * 2002-02-27 2006-08-01 Microsoft Corporation Dynamic data structures for tracking data stored in a flash memory device
US7533214B2 (en) * 2002-02-27 2009-05-12 Microsoft Corporation Open architecture flash driver
US6901499B2 (en) * 2002-02-27 2005-05-31 Microsoft Corp. System and method for tracking data stored in a flash memory device
US7093101B2 (en) * 2002-11-21 2006-08-15 Microsoft Corporation Dynamic data structures for tracking file system free space in a flash memory device
JP3587842B2 (ja) * 2002-12-17 2004-11-10 沖電気工業株式会社 データ書き換え装置およびデータ書き換え方法ならびにフラッシュメモリ装置
US7644376B2 (en) * 2003-10-23 2010-01-05 Microsoft Corporation Flexible architecture for notifying applications of state changes
JP3942612B2 (ja) * 2004-09-10 2007-07-11 東京エレクトロンデバイス株式会社 記憶装置、メモリ管理方法及びプログラム
KR100650839B1 (ko) * 2004-10-25 2006-11-27 에스티마이크로일렉트로닉스 엔.브이. 플래시 메모리 시스템 및 그 소거방법
US7246195B2 (en) * 2004-12-30 2007-07-17 Intel Corporation Data storage management for flash memory devices
US7457909B2 (en) * 2005-01-14 2008-11-25 Angelo Di Sena Controlling operation of flash memories
US20060184718A1 (en) * 2005-02-16 2006-08-17 Sinclair Alan W Direct file data programming and deletion in flash memories
US9104315B2 (en) * 2005-02-04 2015-08-11 Sandisk Technologies Inc. Systems and methods for a mass data storage system having a file-based interface to a host and a non-file-based interface to secondary storage
US20060184719A1 (en) * 2005-02-16 2006-08-17 Sinclair Alan W Direct data file storage implementation techniques in flash memories
US7877539B2 (en) * 2005-02-16 2011-01-25 Sandisk Corporation Direct data file storage in flash memories
US7627733B2 (en) * 2005-08-03 2009-12-01 Sandisk Corporation Method and system for dual mode access for storage devices
ATE493707T1 (de) * 2005-08-03 2011-01-15 Sandisk Corp Nichtflüchtiger speicher mit blockverwaltung
US7669003B2 (en) * 2005-08-03 2010-02-23 Sandisk Corporation Reprogrammable non-volatile memory systems with indexing of directly stored data files
US7949845B2 (en) * 2005-08-03 2011-05-24 Sandisk Corporation Indexing of file data in reprogrammable non-volatile memories that directly store data files
US7558906B2 (en) * 2005-08-03 2009-07-07 Sandisk Corporation Methods of managing blocks in nonvolatile memory
US7480766B2 (en) * 2005-08-03 2009-01-20 Sandisk Corporation Interfacing systems operating through a logical address space and on a direct data file basis
US7409489B2 (en) * 2005-08-03 2008-08-05 Sandisk Corporation Scheduling of reclaim operations in non-volatile memory
US7552271B2 (en) * 2005-08-03 2009-06-23 Sandisk Corporation Nonvolatile memory with block management
KR100739722B1 (ko) * 2005-08-20 2007-07-13 삼성전자주식회사 플래시 메모리 관리 방법 및 플래시 메모리 시스템
US7529905B2 (en) * 2005-10-13 2009-05-05 Sandisk Corporation Method of storing transformed units of data in a memory system having fixed sized storage blocks
US7814262B2 (en) * 2005-10-13 2010-10-12 Sandisk Corporation Memory system storing transformed units of data in fixed sized storage blocks
US7877540B2 (en) * 2005-12-13 2011-01-25 Sandisk Corporation Logically-addressed file storage methods
US7747837B2 (en) * 2005-12-21 2010-06-29 Sandisk Corporation Method and system for accessing non-volatile storage devices
US7793068B2 (en) * 2005-12-21 2010-09-07 Sandisk Corporation Dual mode access for non-volatile storage devices
US7769978B2 (en) * 2005-12-21 2010-08-03 Sandisk Corporation Method and system for accessing non-volatile storage devices
KR100706808B1 (ko) * 2006-02-03 2007-04-12 삼성전자주식회사 쓰기 버퍼로서 동작하는 불 휘발성 메모리를 구비한 데이터저장 장치 및 그것의 블록 회수 방법
US7564721B2 (en) * 2006-05-25 2009-07-21 Micron Technology, Inc. Method and apparatus for improving storage performance using a background erase
US9207876B2 (en) 2007-04-19 2015-12-08 Microsoft Technology Licensing, Llc Remove-on-delete technologies for solid state drive optimization
JP4410271B2 (ja) * 2007-04-25 2010-02-03 株式会社東芝 メモリ制御装置
US20080282024A1 (en) * 2007-05-09 2008-11-13 Sudeep Biswas Management of erase operations in storage devices based on flash memories
US7991942B2 (en) * 2007-05-09 2011-08-02 Stmicroelectronics S.R.L. Memory block compaction method, circuit, and system in storage devices based on flash memories
US8041883B2 (en) 2007-05-09 2011-10-18 Stmicroelectronics S.R.L. Restoring storage devices based on flash memories and related circuit, system, and method
US7882301B2 (en) * 2007-05-09 2011-02-01 Stmicroelectronics S.R.L. Wear leveling in storage devices based on flash memories and related circuit, system, and method
US8156392B2 (en) * 2008-04-05 2012-04-10 Fusion-Io, Inc. Apparatus, system, and method for bad block remapping
US20090271564A1 (en) * 2008-04-25 2009-10-29 Hitachi, Ltd. Storage system
US9070453B2 (en) 2010-04-15 2015-06-30 Ramot At Tel Aviv University Ltd. Multiple programming of flash memory without erase
JP2012203443A (ja) * 2011-03-23 2012-10-22 Toshiba Corp メモリシステムおよびメモリシステムの制御方法
US9195578B2 (en) 2012-08-24 2015-11-24 International Business Machines Corporation Systems, methods and computer program products memory space management for storage class memory
US8812744B1 (en) 2013-03-14 2014-08-19 Microsoft Corporation Assigning priorities to data for hybrid drives
US9478271B2 (en) * 2013-03-14 2016-10-25 Seagate Technology Llc Nonvolatile memory data recovery after power failure
US9626126B2 (en) 2013-04-24 2017-04-18 Microsoft Technology Licensing, Llc Power saving mode hybrid drive access management
US9946495B2 (en) 2013-04-25 2018-04-17 Microsoft Technology Licensing, Llc Dirty data management for hybrid drives
TWI548991B (zh) * 2014-02-14 2016-09-11 群聯電子股份有限公司 記憶體管理方法、記憶體控制電路單元與記憶體儲存裝置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5535328A (en) * 1989-04-13 1996-07-09 Sandisk Corporation Non-volatile memory system card with flash erasable sectors of EEprom cells including a mechanism for substituting defective cells
DE4215063C2 (de) * 1991-05-10 1999-11-25 Intel Corp Einrichtung und Verfahren zum Seitenwechsel bei einem nicht-flüchtigen Speicher
JP3178909B2 (ja) * 1992-01-10 2001-06-25 株式会社東芝 半導体メモリ装置
US5422855A (en) * 1992-03-31 1995-06-06 Intel Corporation Flash memory card with all zones chip enable circuitry
US5375222A (en) * 1992-03-31 1994-12-20 Intel Corporation Flash memory card with a ready/busy mask register
US5428579A (en) * 1992-03-31 1995-06-27 Intel Corporation Flash memory card with power control register and jumpers
JPH06119230A (ja) * 1992-10-06 1994-04-28 Fujitsu Ltd 半導体記憶装置
JP3641280B2 (ja) * 1992-10-30 2005-04-20 インテル・コーポレーション フラッシュeepromアレイのクリーン・アップすべきブロックを決定する方法
US5341330A (en) * 1992-10-30 1994-08-23 Intel Corporation Method for writing to a flash memory array during erase suspend intervals
US5404485A (en) * 1993-03-08 1995-04-04 M-Systems Flash Disk Pioneers Ltd. Flash file system
JP3078946B2 (ja) * 1993-03-11 2000-08-21 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 一括消去型不揮発性メモリの管理方法及び半導体ディスク装置

Also Published As

Publication number Publication date
EP0770959B1 (de) 2002-09-18
DE69623720D1 (de) 2002-10-24
US5867641A (en) 1999-02-02
EP0770959A1 (de) 1997-05-02

Similar Documents

Publication Publication Date Title
DE69623720T2 (de) Verfahren zum Aufräumen eines Flash-Speichers mit Übersetzungsschicht
DE69623407D1 (de) Verfahren zur Überprüfung der Blockzuordnung eines Flash-Speichers mit Übersetzungsschicht
DE69735734D1 (de) Verfahren zum Auftragen einer Sperrschicht auf einem Kunststoffsubstrat
DE69706205D1 (de) Verfahren zum Zementieren eines Bohrlochs
DE69517591D1 (de) Verfahren zum einbringen einer leckerfassungsflüssigkeit
DE69710225T2 (de) Verfahren zum erwärmen eines sitzes
DE59811457D1 (de) Verfahren zum aufspulen eines anlaufenden fadens
DE69635530D1 (de) Verfahren zum Trocknen eines Substrats
DE69813888T2 (de) Verfahren zum auftragen ferroelektrischer dünnschichten
ATA21698A (de) Verfahren zum behandeln eines gutes
DE60041789D1 (de) Verfahren zum Versiegeln mit Kunststoff
DE69623949D1 (de) Verfahren zum mehrschichtbeschichten
DE69417508T2 (de) Verfahren zum Aufbringen einer reibungsreduzierenden Schicht
DE69508526T2 (de) Verfahren zum Innenbeschichten eines Rohres
DE69612091T2 (de) Verfahren zum beschichten mit einem fotokatalytischen halbleiter
DE69817521D1 (de) Verfahren zum Beschichten eines Schneckenextruder
DE69608571D1 (de) Verfahren zum behandeln eines korkstopfens
DE69702178T2 (de) Verfahren zum umhüllen eines gegenstands mit einer transparenten kapsel
DE69731255D1 (de) Verfahren zum Löschen eines nichtflüchtigen Speichers
ATA20898A (de) Verfahren zum bestrahlen eines gutes
DE69421410T2 (de) Verfahren zum abscheiden monomolekularer schichten
DE59604614D1 (de) Verfahren zum ausbessern von beschichtungsfehlern
DE59306040D1 (de) Verfahren zum reinigen von glycerinwasser
DE69525035D1 (de) Verfahren zum testen einer speicheradressen-dekodierschaltung
DE59603717D1 (de) Verfahren zum ummanteln eines kunststoffrohres mit einer metallummantelung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee