DE69615264D1 - Monolitischer gütegeschalteter Mikrolaser mit nichtlinearem Material im Resonator - Google Patents

Monolitischer gütegeschalteter Mikrolaser mit nichtlinearem Material im Resonator

Info

Publication number
DE69615264D1
DE69615264D1 DE69615264T DE69615264T DE69615264D1 DE 69615264 D1 DE69615264 D1 DE 69615264D1 DE 69615264 T DE69615264 T DE 69615264T DE 69615264 T DE69615264 T DE 69615264T DE 69615264 D1 DE69615264 D1 DE 69615264D1
Authority
DE
Germany
Prior art keywords
resonator
monolithic
nonlinear material
switched microlaser
microlaser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69615264T
Other languages
English (en)
Other versions
DE69615264T2 (de
Inventor
Laurent Fulbert
Engin Molva
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE69615264D1 publication Critical patent/DE69615264D1/de
Publication of DE69615264T2 publication Critical patent/DE69615264T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
    • H01S3/113—Q-switching using intracavity saturable absorbers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/0615—Shape of end-face
DE69615264T 1995-05-12 1996-05-10 Monolitischer gütegeschalteter Mikrolaser mit nichtlinearem Material im Resonator Expired - Fee Related DE69615264T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9505650A FR2734092B1 (fr) 1995-05-12 1995-05-12 Microlaser monolithique declenche et materiau non lineaire intracavite

Publications (2)

Publication Number Publication Date
DE69615264D1 true DE69615264D1 (de) 2001-10-25
DE69615264T2 DE69615264T2 (de) 2002-06-27

Family

ID=9478918

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69615264T Expired - Fee Related DE69615264T2 (de) 1995-05-12 1996-05-10 Monolitischer gütegeschalteter Mikrolaser mit nichtlinearem Material im Resonator

Country Status (5)

Country Link
US (1) US5832010A (de)
EP (1) EP0742615B1 (de)
JP (1) JP3782847B2 (de)
DE (1) DE69615264T2 (de)
FR (1) FR2734092B1 (de)

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JPH09260761A (ja) * 1996-03-22 1997-10-03 Nec Corp 光パラメトリック発振器
DE19719901C2 (de) * 1996-06-05 2002-03-21 Reinhard Bruch Festkörperlaser mit einer Longitudinalmode und Frequenztransformation
FR2751795B1 (fr) * 1996-07-26 1998-08-28 Commissariat Energie Atomique Cavite microlaser et microlaser a selection de mode, et procedes de fabrication
SE510442C2 (sv) * 1996-09-05 1999-05-25 Fredrik Laurell Mikrochipslaser
FR2754114B1 (fr) * 1996-09-30 1998-10-30 Commissariat Energie Atomique Microlaser solide a declenchement electrooptique a electrodes independantes, et procede de realisation
USRE38489E1 (en) * 1997-01-30 2004-04-06 Commissariat A L'energie Atomique Solid microlaser passively switched by a saturable absorber and its production process
FR2758915B1 (fr) * 1997-01-30 1999-03-05 Commissariat Energie Atomique Microlaser solide declenche passivement par absorbant saturable et son procede de fabrication
JPH10256638A (ja) * 1997-03-13 1998-09-25 Ricoh Co Ltd 固体レーザ装置
US6078598A (en) * 1997-04-25 2000-06-20 Nikon Corporation Laser apparatus, pulsed laser oscillation method and projection exposure apparatus using the same
US6072815A (en) * 1998-02-27 2000-06-06 Litton Systems, Inc. Microlaser submount assembly and associates packaging method
US6240113B1 (en) 1998-02-27 2001-05-29 Litton Systems, Inc. Microlaser-based electro-optic system and associated fabrication method
FR2777124A1 (fr) * 1998-08-06 1999-10-08 Commissariat Energie Atomique Projecteur d'images a mosaique de microlasers
FR2785099B1 (fr) * 1998-10-27 2001-03-09 Commissariat Energie Atomique Laser a l'etat solide, notamment microlaser, capable d'emettre des impulsions longues
US6219361B1 (en) 1999-06-21 2001-04-17 Litton Systems, Inc. Side pumped, Q-switched microlaser
US6813285B2 (en) 1999-06-21 2004-11-02 Litton Systems, Inc. Q-switched microlaser
US6377593B1 (en) 1999-06-21 2002-04-23 Northrop Grumman Corporation Side pumped Q-switched microlaser and associated fabrication method
DE19946176B4 (de) * 1999-09-21 2016-09-15 Jenoptik Laser Gmbh Diodengepumpter Laser mit interner Frequenzverdopplung
US6539041B1 (en) * 2000-03-30 2003-03-25 The United States Of America As Represented By The Secretary Of The Navy Compact solid state dye laser
US6501772B1 (en) 2000-08-11 2002-12-31 Litton Systems, Inc. Microlaser assembly having a microresonator and aligned electro-optic components
JP2003295244A (ja) * 2002-04-02 2003-10-15 Ngk Insulators Ltd 青色レーザ光発生装置および青色レーザ光の発生方法
DE10219004A1 (de) * 2002-04-27 2003-11-13 Rofin Sinar Laser Gmbh Laserstrahlquelle mit einem eine dünne Kristallscheibe als laseraktives Medium enthaltenden Laserelement
JP2004128139A (ja) * 2002-10-01 2004-04-22 Sony Corp レーザ光発生装置及びその製造方法
FR2864699B1 (fr) * 2003-12-24 2006-02-24 Commissariat Energie Atomique Assemblage d'un composant monte sur une surface de report
WO2006102084A1 (en) * 2005-03-18 2006-09-28 Pavilion Integration Corporation Monolithic microchip laser with intracavity beam combining and sum frequency or difference frequency mixing
JP2006310743A (ja) * 2005-03-31 2006-11-09 Topcon Corp レーザ発振装置
US7535938B2 (en) * 2005-08-15 2009-05-19 Pavilion Integration Corporation Low-noise monolithic microchip lasers capable of producing wavelengths ranging from IR to UV based on efficient and cost-effective frequency conversion
JP2007158020A (ja) * 2005-12-05 2007-06-21 Ricoh Co Ltd 光学素子
JP2009535796A (ja) * 2006-04-27 2009-10-01 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ キャビティ内アップ変換レーザー
US20080020083A1 (en) * 2006-06-06 2008-01-24 Kabushiki Kaisha Topcon Method for joining optical members, structure for integrating optical members and laser oscillation device
US7457330B2 (en) * 2006-06-15 2008-11-25 Pavilion Integration Corporation Low speckle noise monolithic microchip RGB lasers
JP2008028379A (ja) * 2006-06-22 2008-02-07 Fujifilm Corp モードロックレーザ装置
FR2916310B1 (fr) * 2007-05-14 2009-08-28 Centre Nat Rech Scient Laser a puce pulse
DE102007044009A1 (de) * 2007-09-14 2009-03-19 Robert Bosch Gmbh Lasereinrichtung und Betriebsverfahren hierfür
FR2947108B1 (fr) * 2009-06-19 2011-12-02 Centre Nat Rech Scient Generateur et systeme laser a sous-cavites couplees
DE102009054601A1 (de) * 2009-12-14 2011-06-16 Robert Bosch Gmbh Laserzündsystem
CN102169244A (zh) * 2011-06-01 2011-08-31 中国工程物理研究院流体物理研究所 一种低电压驱动的电光开关
DE102011107360A1 (de) * 2011-06-29 2013-01-03 Karlsruher Institut für Technologie Mikrooptisches Element, mikrooptisches Array und optisches Sensorensystem
WO2021106757A1 (ja) * 2019-11-28 2021-06-03 ソニー株式会社 レーザ素子、レーザ素子の製造方法、レーザ装置およびレーザ増幅素子
EP4042528B1 (de) * 2020-09-08 2024-03-27 Trieye Ltd. Neuartiger passiv gütegeschalteter laser

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1566716A (en) * 1977-03-15 1980-05-08 Gen Electric Co Ltd Laser resonators and their manufacture
US4191931A (en) * 1978-02-06 1980-03-04 Sanders Associates, Inc. Cooled laser q-switch
US4953166A (en) * 1988-02-02 1990-08-28 Massachusetts Institute Of Technology Microchip laser
US5265116A (en) * 1988-02-02 1993-11-23 Massachusetts Institute Of Technology Microchip laser
US5256164A (en) * 1988-02-02 1993-10-26 Massachusetts Institute Of Technology Method of fabricating a microchip laser
US4982405A (en) * 1989-09-07 1991-01-01 Massachusette Institute Of Technology Coupled-cavity Q-switched laser
US5048051A (en) * 1990-03-02 1991-09-10 Massachusetts Institute Of Technology Optically-stabilized plano-plano optical resonators
GB9109882D0 (en) * 1991-05-08 1991-07-03 Robinson Donald Climbing equipment
CA2071598C (en) * 1991-06-21 1999-01-19 Akira Eda Optical device and method of manufacturing the same
US5295146A (en) * 1992-04-10 1994-03-15 Polaroid Corporation Solid state gain mediums for optically pumped monolithic laser
JPH06209135A (ja) * 1992-11-06 1994-07-26 Mitsui Petrochem Ind Ltd 固体レーザ装置
US5381431A (en) * 1993-08-13 1995-01-10 Massachusetts Institute Of Technology Picosecond Q-switched microlasers
FR2712742B1 (fr) * 1993-11-15 1995-12-15 Commissariat Energie Atomique Microlaser solide, monolithique, autoaligné, à déclenchement passif par absorbant saturable et son procédé de fabrication.
FR2715514B1 (fr) * 1994-01-21 1996-02-16 Commissariat Energie Atomique Laser à direction de faisceau controlable.
US5394413A (en) * 1994-02-08 1995-02-28 Massachusetts Institute Of Technology Passively Q-switched picosecond microlaser
US5388114A (en) * 1994-03-17 1995-02-07 Polaroid Corporation Miniaturized self-Q-switched frequency-doubled laser
US5488619A (en) * 1994-10-06 1996-01-30 Trw Inc. Ultracompact Q-switched microlasers and related method
ATE217650T1 (de) * 1996-09-20 2002-06-15 Dsm Fine Chem Austria Gmbh Verfahren zur herstellung von z-l-asparaginsäure- dinatriumsalz aus fumarsäure

Also Published As

Publication number Publication date
EP0742615B1 (de) 2001-09-19
FR2734092B1 (fr) 1997-06-06
JPH08316557A (ja) 1996-11-29
JP3782847B2 (ja) 2006-06-07
DE69615264T2 (de) 2002-06-27
EP0742615A1 (de) 1996-11-13
US5832010A (en) 1998-11-03
FR2734092A1 (fr) 1996-11-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee