DE69604389T2 - Schaltung zur isolierten bitleitungsmodulation eines srams während prüfmodus - Google Patents
Schaltung zur isolierten bitleitungsmodulation eines srams während prüfmodusInfo
- Publication number
- DE69604389T2 DE69604389T2 DE69604389T DE69604389T DE69604389T2 DE 69604389 T2 DE69604389 T2 DE 69604389T2 DE 69604389 T DE69604389 T DE 69604389T DE 69604389 T DE69604389 T DE 69604389T DE 69604389 T2 DE69604389 T2 DE 69604389T2
- Authority
- DE
- Germany
- Prior art keywords
- bitline
- fet
- test mode
- modulation
- sram
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000012360 testing method Methods 0.000 title abstract 5
- 230000005540 biological transmission Effects 0.000 abstract 1
- 230000014759 maintenance of location Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/46—Test trigger logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5004—Voltage
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/421,506 US5568435A (en) | 1995-04-12 | 1995-04-12 | Circuit for SRAM test mode isolated bitline modulation |
PCT/US1996/003382 WO1996032728A1 (en) | 1995-04-12 | 1996-03-12 | Circuit for sram test mode isolated bitline modulation |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69604389D1 DE69604389D1 (de) | 1999-10-28 |
DE69604389T2 true DE69604389T2 (de) | 2000-02-17 |
Family
ID=23670810
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69604389T Expired - Lifetime DE69604389T2 (de) | 1995-04-12 | 1996-03-12 | Schaltung zur isolierten bitleitungsmodulation eines srams während prüfmodus |
Country Status (8)
Country | Link |
---|---|
US (3) | US5568435A (de) |
EP (1) | EP0820631B1 (de) |
JP (1) | JP2912022B2 (de) |
KR (1) | KR100273186B1 (de) |
AT (1) | ATE185018T1 (de) |
DE (1) | DE69604389T2 (de) |
TW (1) | TW358994B (de) |
WO (1) | WO1996032728A1 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5894434A (en) * | 1995-12-22 | 1999-04-13 | Texas Instruments Incorporated | MOS static memory array |
US6103579A (en) | 1996-01-31 | 2000-08-15 | Micron Technology, Inc. | Method of isolating a SRAM cell |
US6750107B1 (en) * | 1996-01-31 | 2004-06-15 | Micron Technology, Inc. | Method and apparatus for isolating a SRAM cell |
US5818750A (en) * | 1996-07-31 | 1998-10-06 | Micron Technology, Inc. | Static memory cell |
JP3223817B2 (ja) * | 1996-11-08 | 2001-10-29 | 日本電気株式会社 | 半導体メモリ装置及びその駆動方法 |
US5996106A (en) | 1997-02-04 | 1999-11-30 | Micron Technology, Inc. | Multi bank test mode for memory devices |
US5913928A (en) | 1997-05-09 | 1999-06-22 | Micron Technology, Inc. | Data compression test mode independent of redundancy |
US6174764B1 (en) | 1997-05-12 | 2001-01-16 | Micron Technology, Inc. | Process for manufacturing integrated circuit SRAM |
FR2772970B1 (fr) * | 1997-12-24 | 2003-09-26 | Sgs Thomson Microelectronics | Procede de test d'une memoire dynamique |
US5999466A (en) * | 1998-01-13 | 1999-12-07 | Micron Technology, Inc. | Method, apparatus and system for voltage screening of integrated circuits |
TW442886B (en) * | 1998-01-15 | 2001-06-23 | Winbond Electronics Corp | Method for testing sub-threshold leakage of pull-down transistor in SRAM |
US5959913A (en) * | 1998-02-19 | 1999-09-28 | Micron Technology, Inc. | Device and method for stress testing a semiconductor memory |
US5995423A (en) * | 1998-02-27 | 1999-11-30 | Micron Technology, Inc. | Method and apparatus for limiting bitline current |
KR100295055B1 (ko) * | 1998-09-25 | 2001-07-12 | 윤종용 | 전압조정이가능한내부전원회로를갖는반도체메모리장치 |
JP2000322900A (ja) * | 1999-05-12 | 2000-11-24 | Mitsubishi Electric Corp | 半導体記録装置 |
US6198670B1 (en) * | 1999-06-22 | 2001-03-06 | Micron Technology, Inc. | Bias generator for a four transistor load less memory cell |
US6172901B1 (en) * | 1999-12-30 | 2001-01-09 | Stmicroelectronics, S.R.L. | Low power static random access memory and method for writing to same |
DE10064478B4 (de) * | 2000-12-22 | 2005-02-24 | Atmel Germany Gmbh | Verfahren zur Prüfung einer integrierten Schaltung und Schaltungsanordnung |
US6950355B2 (en) * | 2001-08-17 | 2005-09-27 | Broadcom Corporation | System and method to screen defect related reliability failures in CMOS SRAMS |
US6707707B2 (en) * | 2001-12-21 | 2004-03-16 | Micron Technology, Inc. | SRAM power-up system and method |
KR100471168B1 (ko) * | 2002-05-27 | 2005-03-08 | 삼성전자주식회사 | 반도체 메모리 장치의 불량 셀을 스크린하는 회로, 그스크린 방법 및 그 스크린을 위한 배치 방법 |
US6781907B2 (en) | 2002-06-06 | 2004-08-24 | Micron Technology, Inc. | Temperature compensated T-RAM memory device and method |
JP2004199763A (ja) * | 2002-12-18 | 2004-07-15 | Renesas Technology Corp | 半導体集積回路装置 |
KR100505430B1 (ko) * | 2003-11-21 | 2005-08-04 | 주식회사 하이닉스반도체 | 에스램의 불량분석 방법 |
US7519877B2 (en) * | 2004-08-10 | 2009-04-14 | Micron Technology, Inc. | Memory with test mode output |
US7495979B2 (en) * | 2005-03-25 | 2009-02-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for in-situ parametric SRAM diagnosis |
US7385864B2 (en) * | 2006-09-12 | 2008-06-10 | Texas Instruments Incorporated | SRAM static noise margin test structure suitable for on chip parametric measurements |
US11295995B2 (en) | 2019-09-17 | 2022-04-05 | International Business Machines Corporation | Testing SRAM structures |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4502140A (en) * | 1983-07-25 | 1985-02-26 | Mostek Corporation | GO/NO GO margin test circuit for semiconductor memory |
JPH01166399A (ja) * | 1987-12-23 | 1989-06-30 | Toshiba Corp | スタティック型ランダムアクセスメモリ |
JPH01166391A (ja) * | 1987-12-23 | 1989-06-30 | Toshiba Corp | スタティック型ランダムアクセスメモリ |
JP3050326B2 (ja) * | 1990-11-30 | 2000-06-12 | 日本電気株式会社 | 半導体集積回路 |
US5222066A (en) * | 1990-12-26 | 1993-06-22 | Motorola, Inc. | Modular self-test for embedded SRAMS |
US5166608A (en) * | 1991-11-07 | 1992-11-24 | Advanced Micro Devices, Inc. | Arrangement for high speed testing of field-effect transistors and memory cells employing the same |
US5255230A (en) * | 1991-12-31 | 1993-10-19 | Intel Corporation | Method and apparatus for testing the continuity of static random access memory cells |
US5212442A (en) * | 1992-03-20 | 1993-05-18 | Micron Technology, Inc. | Forced substrate test mode for packaged integrated circuits |
KR950014099B1 (ko) * | 1992-06-12 | 1995-11-21 | 가부시기가이샤 도시바 | 반도체 기억장치 |
JPH0612878A (ja) * | 1992-06-25 | 1994-01-21 | Mitsubishi Electric Corp | 半導体メモリ装置 |
US5424988A (en) * | 1992-09-30 | 1995-06-13 | Sgs-Thomson Microelectronics, Inc. | Stress test for memory arrays in integrated circuits |
KR950004870B1 (ko) * | 1992-11-24 | 1995-05-15 | 삼성전자 주식회사 | 번인 모드에서 분리게이트의 신뢰성 개선회로 |
JPH06233000A (ja) * | 1993-02-08 | 1994-08-19 | Matsushita Electric Ind Co Ltd | ファクシミリ装置 |
-
1995
- 1995-04-12 US US08/421,506 patent/US5568435A/en not_active Expired - Lifetime
-
1996
- 1996-02-15 TW TW085101895A patent/TW358994B/zh not_active IP Right Cessation
- 1996-03-12 KR KR1019970707223A patent/KR100273186B1/ko not_active IP Right Cessation
- 1996-03-12 JP JP8531004A patent/JP2912022B2/ja not_active Expired - Fee Related
- 1996-03-12 WO PCT/US1996/003382 patent/WO1996032728A1/en active IP Right Grant
- 1996-03-12 EP EP96911291A patent/EP0820631B1/de not_active Expired - Lifetime
- 1996-03-12 DE DE69604389T patent/DE69604389T2/de not_active Expired - Lifetime
- 1996-03-12 AT AT96911291T patent/ATE185018T1/de not_active IP Right Cessation
- 1996-10-18 US US08/734,064 patent/US5745415A/en not_active Expired - Lifetime
-
1997
- 1997-08-14 US US08/911,498 patent/US6081464A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0820631B1 (de) | 1999-09-22 |
US5568435A (en) | 1996-10-22 |
TW358994B (en) | 1999-05-21 |
EP0820631A1 (de) | 1998-01-28 |
US5745415A (en) | 1998-04-28 |
JP2912022B2 (ja) | 1999-06-28 |
JPH10506218A (ja) | 1998-06-16 |
DE69604389D1 (de) | 1999-10-28 |
KR19980703823A (ko) | 1998-12-05 |
KR100273186B1 (ko) | 2001-01-15 |
ATE185018T1 (de) | 1999-10-15 |
US6081464A (en) | 2000-06-27 |
WO1996032728A1 (en) | 1996-10-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: ANWALTSKANZLEI GULDE HENGELHAUPT ZIEBIG & SCHNEIDE |