DE69604089D1 - Verfahren zur herstellung von metallquanteninseln - Google Patents

Verfahren zur herstellung von metallquanteninseln

Info

Publication number
DE69604089D1
DE69604089D1 DE69604089T DE69604089T DE69604089D1 DE 69604089 D1 DE69604089 D1 DE 69604089D1 DE 69604089 T DE69604089 T DE 69604089T DE 69604089 T DE69604089 T DE 69604089T DE 69604089 D1 DE69604089 D1 DE 69604089D1
Authority
DE
Germany
Prior art keywords
producing metal
metal quantum
quantum islands
islands
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69604089T
Other languages
English (en)
Other versions
DE69604089T2 (de
Inventor
Peter Dobson
Oleg Viktorovich Salata
Peter Hull
John Hutchison
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxford University Innovation Ltd
Original Assignee
Oxford University Innovation Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxford University Innovation Ltd filed Critical Oxford University Innovation Ltd
Application granted granted Critical
Publication of DE69604089D1 publication Critical patent/DE69604089D1/de
Publication of DE69604089T2 publication Critical patent/DE69604089T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/16—Making metallic powder or suspensions thereof using chemical processes
    • B22F9/30—Making metallic powder or suspensions thereof using chemical processes with decomposition of metal compounds, e.g. by pyrolysis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/3556—Semiconductor materials, e.g. quantum wells
DE69604089T 1995-07-27 1996-07-29 Verfahren zur herstellung von metallquanteninseln Expired - Fee Related DE69604089T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9515439.9A GB9515439D0 (en) 1995-07-27 1995-07-27 Method of producing metal quantum dots
PCT/GB1996/001853 WO1997004906A1 (en) 1995-07-27 1996-07-29 Method of producing metal quantum dots

Publications (2)

Publication Number Publication Date
DE69604089D1 true DE69604089D1 (de) 1999-10-07
DE69604089T2 DE69604089T2 (de) 1999-12-23

Family

ID=10778372

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69604089T Expired - Fee Related DE69604089T2 (de) 1995-07-27 1996-07-29 Verfahren zur herstellung von metallquanteninseln

Country Status (7)

Country Link
US (1) US5965212A (de)
EP (1) EP0871557B1 (de)
JP (1) JPH11510314A (de)
DE (1) DE69604089T2 (de)
ES (1) ES2137720T3 (de)
GB (1) GB9515439D0 (de)
WO (1) WO1997004906A1 (de)

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JP3012547B2 (ja) * 1997-02-25 2000-02-21 日本ビクター株式会社 光記録媒体及びその製造方法
US7045015B2 (en) 1998-09-30 2006-05-16 Optomec Design Company Apparatuses and method for maskless mesoscale material deposition
US20050156991A1 (en) * 1998-09-30 2005-07-21 Optomec Design Company Maskless direct write of copper using an annular aerosol jet
US7294366B2 (en) * 1998-09-30 2007-11-13 Optomec Design Company Laser processing for heat-sensitive mesoscale deposition
US8110247B2 (en) 1998-09-30 2012-02-07 Optomec Design Company Laser processing for heat-sensitive mesoscale deposition of oxygen-sensitive materials
US20040197493A1 (en) * 1998-09-30 2004-10-07 Optomec Design Company Apparatus, methods and precision spray processes for direct write and maskless mesoscale material deposition
US7108894B2 (en) 1998-09-30 2006-09-19 Optomec Design Company Direct Write™ System
US7938079B2 (en) 1998-09-30 2011-05-10 Optomec Design Company Annular aerosol jet deposition using an extended nozzle
US6179912B1 (en) * 1999-12-20 2001-01-30 Biocrystal Ltd. Continuous flow process for production of semiconductor nanocrystals
US20030106488A1 (en) * 2001-12-10 2003-06-12 Wen-Chiang Huang Manufacturing method for semiconductor quantum particles
KR100682886B1 (ko) 2003-12-18 2007-02-15 삼성전자주식회사 나노입자의 제조방법
US7405002B2 (en) * 2004-08-04 2008-07-29 Agency For Science, Technology And Research Coated water-soluble nanoparticles comprising semiconductor core and silica coating
US7534489B2 (en) * 2004-09-24 2009-05-19 Agency For Science, Technology And Research Coated composites of magnetic material and quantum dots
US20060280866A1 (en) * 2004-10-13 2006-12-14 Optomec Design Company Method and apparatus for mesoscale deposition of biological materials and biomaterials
TWI287255B (en) * 2004-10-21 2007-09-21 Hoya Corp Apparatus and method for depositing fine particles, and manufacturing method of light-emitting element
US20060127931A1 (en) * 2004-11-15 2006-06-15 Bradley Schmidt Particle detector with waveguide light confinement
US7674671B2 (en) 2004-12-13 2010-03-09 Optomec Design Company Aerodynamic jetting of aerosolized fluids for fabrication of passive structures
US7938341B2 (en) 2004-12-13 2011-05-10 Optomec Design Company Miniature aerosol jet and aerosol jet array
US7309642B2 (en) * 2005-11-09 2007-12-18 Hewlett-Packard Development Company, L.P. Metallic quantum dots fabricated by a superlattice structure
US8167972B2 (en) 2006-06-30 2012-05-01 N.E. Chemcat Corporation Process for producing metal nanoparticle and metal nanoparticle produced by the process
DE102006033037A1 (de) * 2006-07-14 2008-01-24 Universität Bielefeld Einstufiges Verfahren zur Aufbringung einer Metallschicht auf ein Substrat
US7829162B2 (en) 2006-08-29 2010-11-09 international imagining materials, inc Thermal transfer ribbon
WO2008063653A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063658A2 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
WO2008063652A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
DE102006060366B8 (de) * 2006-12-16 2013-08-01 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Verfahren zur Herstellung von von einer Matrix abgedeckten Quantenpunkten
TWI482662B (zh) 2007-08-30 2015-05-01 Optomec Inc 機械上一體式及緊密式耦合之列印頭以及噴霧源
TWI538737B (zh) 2007-08-31 2016-06-21 阿普托麥克股份有限公司 材料沉積總成
US8887658B2 (en) 2007-10-09 2014-11-18 Optomec, Inc. Multiple sheath multiple capillary aerosol jet
KR100981309B1 (ko) 2007-12-06 2010-09-10 한국세라믹기술원 양자점 재료 증착박막 형성방법 및 그 생성물
CN101279373B (zh) * 2007-12-28 2010-05-19 天津大学 一种二次库仑分裂制备纳米颗粒的装置
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
KR101995370B1 (ko) 2008-04-03 2019-07-02 삼성 리서치 아메리카 인코포레이티드 양자점들을 포함하는 발광 소자
US8816479B2 (en) 2008-06-17 2014-08-26 National Research Council Of Canada Atomistic quantum dot
US8064059B2 (en) * 2008-11-04 2011-11-22 Alipasha Vaziri Optical pulse duration measurement
US10994473B2 (en) 2015-02-10 2021-05-04 Optomec, Inc. Fabrication of three dimensional structures by in-flight curing of aerosols
CN111655382B (zh) 2017-11-13 2022-05-31 奥普托美克公司 气溶胶流的阻挡
CN111826636B (zh) * 2020-08-21 2022-12-13 南京工程学院 一种同腔制造氧化锌、氧化钛或氧化镍量子点的方法及设备
CN116510756B (zh) * 2023-04-28 2023-10-03 广东工业大学 一种高熵氟化物量子点纳米酶、制备方法及其生化检测应用

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4844736A (en) * 1986-11-04 1989-07-04 Idemitsu Kosan Co., Ltd. Method for the preparation of finely divided metal particles
GB2215122A (en) * 1988-02-12 1989-09-13 Philips Electronic Associated A method of forming a quantum dot structure

Also Published As

Publication number Publication date
WO1997004906A1 (en) 1997-02-13
JPH11510314A (ja) 1999-09-07
EP0871557B1 (de) 1999-09-01
DE69604089T2 (de) 1999-12-23
EP0871557A1 (de) 1998-10-21
GB9515439D0 (en) 1995-09-27
ES2137720T3 (es) 1999-12-16
US5965212A (en) 1999-10-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee