DE69535849D1 - Lichtemittierende Vorrichtung aus einer Nitridverbindung - Google Patents

Lichtemittierende Vorrichtung aus einer Nitridverbindung

Info

Publication number
DE69535849D1
DE69535849D1 DE69535849T DE69535849T DE69535849D1 DE 69535849 D1 DE69535849 D1 DE 69535849D1 DE 69535849 T DE69535849 T DE 69535849T DE 69535849 T DE69535849 T DE 69535849T DE 69535849 D1 DE69535849 D1 DE 69535849D1
Authority
DE
Germany
Prior art keywords
light emitting
emitting device
device made
nitride compound
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69535849T
Other languages
English (en)
Inventor
Shuji Nakamura
Shinichi Nagahama
Naruhito Iwasa
Hiroyuki Kiyoku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Application granted granted Critical
Publication of DE69535849D1 publication Critical patent/DE69535849D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
DE69535849T 1994-12-02 1995-12-01 Lichtemittierende Vorrichtung aus einer Nitridverbindung Expired - Lifetime DE69535849D1 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP29944794 1994-12-02
JP29944694 1994-12-02
JP32010094 1994-12-22
JP3492495 1995-02-23
JP5705195 1995-03-16
JP5705095 1995-03-16
JP8910295 1995-04-14

Publications (1)

Publication Number Publication Date
DE69535849D1 true DE69535849D1 (de) 2008-11-06

Family

ID=27564389

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69535849T Expired - Lifetime DE69535849D1 (de) 1994-12-02 1995-12-01 Lichtemittierende Vorrichtung aus einer Nitridverbindung

Country Status (5)

Country Link
US (2) US5777350A (de)
EP (1) EP0716457B1 (de)
KR (1) KR100291450B1 (de)
CN (2) CN1106045C (de)
DE (1) DE69535849D1 (de)

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CN1426119A (zh) 2003-06-25
CN1106045C (zh) 2003-04-16
KR100291450B1 (ko) 2001-09-17
US6580099B2 (en) 2003-06-17
US5777350A (en) 1998-07-07
CN1260833C (zh) 2006-06-21
US20020167019A1 (en) 2002-11-14
EP0716457A3 (de) 1998-11-04
CN1132942A (zh) 1996-10-09
EP0716457B1 (de) 2008-09-24
EP0716457A2 (de) 1996-06-12

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