DE69520327D1 - Verfahren zur Herstellung eines Resistmusters - Google Patents

Verfahren zur Herstellung eines Resistmusters

Info

Publication number
DE69520327D1
DE69520327D1 DE69520327T DE69520327T DE69520327D1 DE 69520327 D1 DE69520327 D1 DE 69520327D1 DE 69520327 T DE69520327 T DE 69520327T DE 69520327 T DE69520327 T DE 69520327T DE 69520327 D1 DE69520327 D1 DE 69520327D1
Authority
DE
Germany
Prior art keywords
producing
resist pattern
resist
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69520327T
Other languages
English (en)
Other versions
DE69520327T2 (de
Inventor
Taichi Koizumi
Takahiro Matsuo
Masayuki Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69520327D1 publication Critical patent/DE69520327D1/de
Application granted granted Critical
Publication of DE69520327T2 publication Critical patent/DE69520327T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70658—Electrical testing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70675—Latent image, i.e. measuring the image of the exposed resist prior to development
DE69520327T 1994-11-14 1995-11-14 Verfahren zur Herstellung eines Resistmusters Expired - Fee Related DE69520327T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27913294 1994-11-14

Publications (2)

Publication Number Publication Date
DE69520327D1 true DE69520327D1 (de) 2001-04-19
DE69520327T2 DE69520327T2 (de) 2001-07-12

Family

ID=17606886

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69520327T Expired - Fee Related DE69520327T2 (de) 1994-11-14 1995-11-14 Verfahren zur Herstellung eines Resistmusters

Country Status (4)

Country Link
US (3) US5756242A (de)
EP (1) EP0712047B1 (de)
KR (1) KR100197191B1 (de)
DE (1) DE69520327T2 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5943550A (en) * 1996-03-29 1999-08-24 Advanced Micro Devices, Inc. Method of processing a semiconductor wafer for controlling drive current
KR980005334A (ko) 1996-06-04 1998-03-30 고노 시게오 노광 방법 및 노광 장치
JP3363046B2 (ja) 1997-01-08 2003-01-07 株式会社東芝 プロセス裕度計算方法
US5926690A (en) * 1997-05-28 1999-07-20 Advanced Micro Devices, Inc. Run-to-run control process for controlling critical dimensions
US6331378B1 (en) * 1998-02-25 2001-12-18 Matsushita Electric Industrial Co., Ltd. Pattern forming method
US6413680B1 (en) * 1998-02-26 2002-07-02 Kabushiki Kaisha Toyota Chuo Kenkyusho Optical recording method, optical recording medium, and optical recording system
JP2000077292A (ja) 1998-08-27 2000-03-14 Toshiba Corp レジストパターンの形成方法
US6567717B2 (en) * 2000-01-19 2003-05-20 Advanced Micro Devices, Inc. Feed-forward control of TCI doping for improving mass-production-wise, statistical distribution of critical performance parameters in semiconductor devices
US6350390B1 (en) 2000-02-22 2002-02-26 Taiwan Semiconductor Manufacturing Company, Ltd Plasma etch method for forming patterned layer with enhanced critical dimension (CD) control
US6689519B2 (en) 2000-05-04 2004-02-10 Kla-Tencor Technologies Corp. Methods and systems for lithography process control
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US6500755B2 (en) 2000-12-06 2002-12-31 Advanced Micro Devices, Inc. Resist trim process to define small openings in dielectric layers
US6879400B2 (en) 2000-12-11 2005-04-12 International Business Machines Corporation Single tone process window metrology target and method for lithographic processing
US6632692B1 (en) 2001-01-11 2003-10-14 Advanced Micro Devices, Inc. Automated method of controlling critical dimensions of features by controlling stepper exposure dose, and system for accomplishing same
US6803995B2 (en) 2001-01-17 2004-10-12 International Business Machines Corporation Focus control system
US7382447B2 (en) * 2001-06-26 2008-06-03 Kla-Tencor Technologies Corporation Method for determining lithographic focus and exposure
US6707562B1 (en) 2001-07-02 2004-03-16 Advanced Micro Devices, Inc. Method of using scatterometry measurements to control photoresist etch process
DE10134756A1 (de) * 2001-07-17 2003-04-03 Advanced Micro Devices Inc Ein System und Verfahren zur gesteuerten Strukturierung auf Waferbasis von Strukturelementen mit kritischen Dimensionen
US6975398B2 (en) 2001-10-15 2005-12-13 International Business Machines Corporation Method for determining semiconductor overlay on groundrule devices
US6638671B2 (en) 2001-10-15 2003-10-28 International Business Machines Corporation Combined layer-to-layer and within-layer overlay control system
US7352453B2 (en) * 2003-01-17 2008-04-01 Kla-Tencor Technologies Corporation Method for process optimization and control by comparison between 2 or more measured scatterometry signals
JP4146755B2 (ja) * 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
US6937337B2 (en) * 2003-11-19 2005-08-30 International Business Machines Corporation Overlay target and measurement method using reference and sub-grids
US7388677B2 (en) * 2004-03-22 2008-06-17 Timbre Technologies, Inc. Optical metrology optimization for repetitive structures
FR2869306B1 (fr) * 2004-04-23 2006-09-15 Commissariat Energie Atomique Procede de fabrication de structures periodiques bi-dimensionnelles, en milieu polymere
US20060109463A1 (en) * 2004-11-22 2006-05-25 Asml Netherlands B.V. Latent overlay metrology
US20060187466A1 (en) * 2005-02-18 2006-08-24 Timbre Technologies, Inc. Selecting unit cell configuration for repeating structures in optical metrology
US7439001B2 (en) * 2005-08-18 2008-10-21 International Business Machines Corporation Focus blur measurement and control method
US7474401B2 (en) * 2005-09-13 2009-01-06 International Business Machines Corporation Multi-layer alignment and overlay target and measurement method
US7455939B2 (en) * 2006-07-31 2008-11-25 International Business Machines Corporation Method of improving grating test pattern for lithography monitoring and controlling
US7858276B2 (en) * 2007-07-06 2010-12-28 Advanced Micro Devices, Inc. Method for determining suitability of a resist in semiconductor wafer fabrication
US7879515B2 (en) * 2008-01-21 2011-02-01 International Business Machines Corporation Method to control semiconductor device overlay using post etch image metrology
US8438507B2 (en) * 2008-11-20 2013-05-07 Nikon Corporation Systems and methods for adjusting a lithographic scanner
US9097989B2 (en) 2009-01-27 2015-08-04 International Business Machines Corporation Target and method for mask-to-wafer CD, pattern placement and overlay measurement and control
US9927718B2 (en) 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
US10890436B2 (en) 2011-07-19 2021-01-12 Kla Corporation Overlay targets with orthogonal underlayer dummyfill
EP4099091B1 (de) * 2021-06-02 2024-04-10 IMEC vzw Musterhöhenmetrologie mit verwendung eines e-strahl-systems

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60249327A (ja) * 1984-05-25 1985-12-10 Hitachi Ltd レジストパタ−ン検出方法
JPH03248414A (ja) * 1990-02-26 1991-11-06 Mitsubishi Electric Corp 選択的な表面反応を利用した微細パターンの形成方法
JPH06267824A (ja) * 1993-03-15 1994-09-22 Nikon Corp 露光方法

Also Published As

Publication number Publication date
US5773174A (en) 1998-06-30
DE69520327T2 (de) 2001-07-12
EP0712047A3 (de) 1997-05-28
KR100197191B1 (ko) 1999-06-15
KR960019491A (ko) 1996-06-17
EP0712047A2 (de) 1996-05-15
US5763124A (en) 1998-06-09
US5756242A (en) 1998-05-26
EP0712047B1 (de) 2001-03-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee