DE69513782D1 - Dielektrischer Dünnfilm aus Barium und/oder Strontium-Titanat mit Erbium und Herstellungsverfahren - Google Patents

Dielektrischer Dünnfilm aus Barium und/oder Strontium-Titanat mit Erbium und Herstellungsverfahren

Info

Publication number
DE69513782D1
DE69513782D1 DE69513782T DE69513782T DE69513782D1 DE 69513782 D1 DE69513782 D1 DE 69513782D1 DE 69513782 T DE69513782 T DE 69513782T DE 69513782 T DE69513782 T DE 69513782T DE 69513782 D1 DE69513782 D1 DE 69513782D1
Authority
DE
Germany
Prior art keywords
erbium
barium
thin film
manufacturing process
film made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69513782T
Other languages
English (en)
Other versions
DE69513782T2 (de
Inventor
Robert Yung-Hsi Tsu
Bernard M Kulwicki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69513782D1 publication Critical patent/DE69513782D1/de
Publication of DE69513782T2 publication Critical patent/DE69513782T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
DE69513782T 1994-09-30 1995-09-25 Dielektrischer Dünnfilm aus Barium und/oder Strontium-Titanat mit Erbium und Herstellungsverfahren Expired - Lifetime DE69513782T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/315,725 US5635741A (en) 1994-09-30 1994-09-30 Barium strontium titanate (BST) thin films by erbium donor doping

Publications (2)

Publication Number Publication Date
DE69513782D1 true DE69513782D1 (de) 2000-01-13
DE69513782T2 DE69513782T2 (de) 2000-06-29

Family

ID=23225775

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69513782T Expired - Lifetime DE69513782T2 (de) 1994-09-30 1995-09-25 Dielektrischer Dünnfilm aus Barium und/oder Strontium-Titanat mit Erbium und Herstellungsverfahren

Country Status (6)

Country Link
US (2) US5635741A (de)
EP (1) EP0709355B1 (de)
JP (1) JPH08198669A (de)
KR (1) KR960012511A (de)
DE (1) DE69513782T2 (de)
TW (1) TW376562B (de)

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Also Published As

Publication number Publication date
KR960012511A (ko) 1996-04-20
TW376562B (en) 1999-12-11
US5731220A (en) 1998-03-24
DE69513782T2 (de) 2000-06-29
JPH08198669A (ja) 1996-08-06
US5635741A (en) 1997-06-03
EP0709355A1 (de) 1996-05-01
EP0709355B1 (de) 1999-12-08

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