DE69411945T2 - Herstellung von quanteninselnpulver gleichmässiger grösse - Google Patents
Herstellung von quanteninselnpulver gleichmässiger grösseInfo
- Publication number
- DE69411945T2 DE69411945T2 DE69411945T DE69411945T DE69411945T2 DE 69411945 T2 DE69411945 T2 DE 69411945T2 DE 69411945 T DE69411945 T DE 69411945T DE 69411945 T DE69411945 T DE 69411945T DE 69411945 T2 DE69411945 T2 DE 69411945T2
- Authority
- DE
- Germany
- Prior art keywords
- metal
- pct
- droplets
- powder
- quantum dots
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
- B22F9/26—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions using gaseous reductors
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/0632—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with gallium, indium or thallium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G11/00—Compounds of cadmium
- C01G11/02—Sulfides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G21/00—Compounds of lead
- C01G21/21—Sulfides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02557—Sulfides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02601—Nanoparticles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/51—Particles with a specific particle size distribution
- C01P2004/52—Particles with a specific particle size distribution highly monodisperse size distribution
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB939323498A GB9323498D0 (en) | 1993-11-15 | 1993-11-15 | Making particles of uniform size |
PCT/GB1994/002514 WO1995013891A1 (en) | 1993-11-15 | 1994-11-15 | Making quantum dot particles of uniform size |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69411945D1 DE69411945D1 (de) | 1998-08-27 |
DE69411945T2 true DE69411945T2 (de) | 1998-11-26 |
Family
ID=10745177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69411945T Expired - Fee Related DE69411945T2 (de) | 1993-11-15 | 1994-11-15 | Herstellung von quanteninselnpulver gleichmässiger grösse |
Country Status (10)
Country | Link |
---|---|
US (1) | US5906670A (de) |
EP (1) | EP0729394B1 (de) |
JP (1) | JPH11514492A (de) |
AT (1) | ATE168605T1 (de) |
AU (1) | AU1031295A (de) |
CA (1) | CA2176569A1 (de) |
DE (1) | DE69411945T2 (de) |
ES (1) | ES2119362T3 (de) |
GB (1) | GB9323498D0 (de) |
WO (1) | WO1995013891A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006060366B4 (de) * | 2006-12-16 | 2012-08-16 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Verfahren zur Herstellung von von einer Matrix abgedeckten Quantenpunkten |
Families Citing this family (68)
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US6116184A (en) * | 1996-05-21 | 2000-09-12 | Symetrix Corporation | Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size |
US5997642A (en) * | 1996-05-21 | 1999-12-07 | Symetrix Corporation | Method and apparatus for misted deposition of integrated circuit quality thin films |
US6607829B1 (en) * | 1997-11-13 | 2003-08-19 | Massachusetts Institute Of Technology | Tellurium-containing nanocrystalline materials |
US6207392B1 (en) | 1997-11-25 | 2001-03-27 | The Regents Of The University Of California | Semiconductor nanocrystal probes for biological applications and process for making and using such probes |
US6426513B1 (en) * | 1998-09-18 | 2002-07-30 | Massachusetts Institute Of Technology | Water-soluble thiol-capped nanocrystals |
US6271130B1 (en) * | 1998-11-25 | 2001-08-07 | The University Of Chicago | Semiconductor assisted metal deposition for nanolithography applications |
DE60027576T2 (de) * | 1999-08-17 | 2007-05-03 | Luminex Corp., Austin | Verkapselung von fluoreszierenden partikeln |
US6585947B1 (en) | 1999-10-22 | 2003-07-01 | The Board Of Trustess Of The University Of Illinois | Method for producing silicon nanoparticles |
US6743406B2 (en) * | 1999-10-22 | 2004-06-01 | The Board Of Trustees Of The University Of Illinois | Family of discretely sized silicon nanoparticles and method for producing the same |
US6984842B1 (en) | 1999-10-25 | 2006-01-10 | The Board Of Trustees Of The University Of Illinois | Silicon nanoparticle field effect transistor and transistor memory device |
US6571028B1 (en) | 2000-03-21 | 2003-05-27 | Evident Technologies | Optical switch having a saturable absorber |
US7465540B2 (en) | 2000-09-21 | 2008-12-16 | Luminex Corporation | Multiple reporter read-out for bioassays |
WO2004026111A2 (en) | 2000-11-16 | 2004-04-01 | Microspherix Llc | Flexible and/or elastic brachytherapy seed or strand |
US6534782B1 (en) * | 2000-11-22 | 2003-03-18 | Battelle Memorial Institute | Structure having spatially separated photo-excitable electron-hole pairs and method of manufacturing same |
US6697548B2 (en) | 2000-12-18 | 2004-02-24 | Evident Technologies | Fabry-perot opitcal switch having a saturable absorber |
US6679938B1 (en) * | 2001-01-26 | 2004-01-20 | University Of Maryland | Method of producing metal particles by spray pyrolysis using a co-solvent and apparatus therefor |
US6410934B1 (en) * | 2001-02-09 | 2002-06-25 | The Board Of Trustees Of The University Of Illinois | Silicon nanoparticle electronic switches |
US7110640B2 (en) | 2001-07-19 | 2006-09-19 | Evident Technologies | Reconfigurable optical add/drop filter |
US6700771B2 (en) * | 2001-08-30 | 2004-03-02 | Micron Technology, Inc. | Decoupling capacitor for high frequency noise immunity |
WO2003021635A2 (en) | 2001-09-05 | 2003-03-13 | Rensselaer Polytechnic Institute | Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles |
US6992298B2 (en) * | 2001-11-21 | 2006-01-31 | The Board Of Trustees Of The University Of Illinois | Coated spherical silicon nanoparticle thin film UV detector with UV response and method of making |
US20030106488A1 (en) * | 2001-12-10 | 2003-06-12 | Wen-Chiang Huang | Manufacturing method for semiconductor quantum particles |
US6623559B2 (en) * | 2001-12-10 | 2003-09-23 | Nanotek Instruments, Inc. | Method for the production of semiconductor quantum particles |
JP3701622B2 (ja) * | 2002-03-27 | 2005-10-05 | 日立ソフトウエアエンジニアリング株式会社 | 半導体ナノ粒子蛍光試薬及び蛍光測定方法 |
DE10214019A1 (de) * | 2002-03-30 | 2003-10-16 | Detlef Mueller-Schulte | Lumineszierende, sphärische, nicht autofluoreszierende Silicagel-Partikel mit veränderbaren Emissionsintensitäten und -frequenzen |
JP3847677B2 (ja) * | 2002-07-23 | 2006-11-22 | 日立ソフトウエアエンジニアリング株式会社 | 半導体ナノ粒子、その製造方法、及び半導体ナノ粒子蛍光試薬 |
JP2004077389A (ja) * | 2002-08-21 | 2004-03-11 | Hitachi Software Eng Co Ltd | 半導体ナノ粒子を含む機能性蛍光試薬 |
JP4263581B2 (ja) * | 2002-10-30 | 2009-05-13 | ハンヤン ハク ウォン カンパニー,リミテッド | 金属薄膜または金属粉末を利用した金属酸化物量子点形成方法 |
JP4133280B2 (ja) * | 2002-12-09 | 2008-08-13 | アルプス電気株式会社 | 機能性多層膜 |
AU2004262253A1 (en) * | 2003-03-06 | 2005-02-10 | Rensselaer Polytechnic Institute | Rapid generation of nanoparticles from bulk solids at room temperature |
EP1738378A4 (de) | 2004-03-18 | 2010-05-05 | Nanosys Inc | Auf nanofaseroberflächen basierende kondensatoren |
US7459015B2 (en) * | 2004-04-16 | 2008-12-02 | Birla Research Institute For Applied Sciences | Process for the preparation of a cellulose solution for spinning of fibres, filaments or films therefrom |
CN1969190A (zh) | 2004-04-20 | 2007-05-23 | 爱默蕾大学 | 多峰性纳米结构,其制造方法以及其使用方法 |
JP2008504676A (ja) * | 2004-06-28 | 2008-02-14 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 湿式化学析出法によって製造された電界効果トランジスタ |
US7405002B2 (en) * | 2004-08-04 | 2008-07-29 | Agency For Science, Technology And Research | Coated water-soluble nanoparticles comprising semiconductor core and silica coating |
US7534489B2 (en) * | 2004-09-24 | 2009-05-19 | Agency For Science, Technology And Research | Coated composites of magnetic material and quantum dots |
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US20060213779A1 (en) * | 2005-03-23 | 2006-09-28 | The Board Of Trustees Of The University Of Illinois And The University Of Jordan | Silicon nanoparticle formation by electrodeposition from silicate |
US7817896B2 (en) * | 2005-04-29 | 2010-10-19 | Corning Incorporated | Optical waveguides containing quantum dot guiding layers and methods of manufacture |
US20070020771A1 (en) * | 2005-06-24 | 2007-01-25 | Applied Nanoworks, Inc. | Nanoparticles and method of making thereof |
KR100742720B1 (ko) | 2006-06-07 | 2007-07-25 | 한양대학교 산학협력단 | 화학적 큐어링에 의한 나노입자의 제조방법 |
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WO2008063652A1 (en) | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Blue emitting semiconductor nanocrystals and compositions and devices including same |
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WO2009145813A1 (en) | 2008-03-04 | 2009-12-03 | Qd Vision, Inc. | Particles including nanoparticles, uses thereof, and methods |
US20100069550A1 (en) * | 2008-03-17 | 2010-03-18 | Washington, University Of | Nanoparticle assemblies and methods for their preparation |
US9525148B2 (en) | 2008-04-03 | 2016-12-20 | Qd Vision, Inc. | Device including quantum dots |
EP2283342B1 (de) | 2008-04-03 | 2018-07-11 | Samsung Research America, Inc. | Verfahren zur herstellung einer lichtemittierende vorrichtung mit quantenpunkten |
US8063131B2 (en) * | 2008-06-18 | 2011-11-22 | University Of Washington | Nanoparticle-amphipol complexes for nucleic acid intracellular delivery and imaging |
DE102008047955A1 (de) * | 2008-09-18 | 2010-04-01 | Otto Hauser | Verfahren und Vorrichtung zur Erzeugung von Halbleiterschichten |
US8412053B2 (en) * | 2008-10-07 | 2013-04-02 | The Boeing Company | Radioisotope powered light modulating communication devices |
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US8164150B1 (en) | 2008-11-10 | 2012-04-24 | The Boeing Company | Quantum dot illumination devices and methods of use |
US8802287B2 (en) * | 2009-01-16 | 2014-08-12 | The Board Of Trustees Of The Leland Stanford Junior University | Quantum dot ultracapacitor and electron battery |
US8524398B2 (en) * | 2009-04-01 | 2013-09-03 | The Board Of Trustees Of The Leland Stanford Junior University | All-electron battery having area-enhanced electrodes |
US8111385B2 (en) * | 2009-01-26 | 2012-02-07 | The Boeing Company | Quantum dot-mediated optical fiber information retrieval systems and methods of use |
US20100264371A1 (en) * | 2009-03-19 | 2010-10-21 | Nick Robert J | Composition including quantum dots, uses of the foregoing, and methods |
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WO2011113054A2 (en) | 2010-03-12 | 2011-09-15 | Aurasense Llc | Crosslinked polynucleotide structure |
US9121065B2 (en) | 2010-08-09 | 2015-09-01 | The Trustees Of The University Of Pennsylvania | Nanoparticle-oligonucleotide hybrid structures and methods of use thereof |
KR101546937B1 (ko) | 2012-04-04 | 2015-08-25 | 삼성전자 주식회사 | 백라이트 유닛용 필름 및 이를 포함하는 백라이트 유닛과 액정 디스플레이 장치 |
CN103489962B (zh) * | 2013-10-07 | 2017-01-04 | 复旦大学 | 大面积制备半导体量子点的方法 |
US9943845B2 (en) * | 2015-10-28 | 2018-04-17 | The Johns Hopkins University | Detector and method for detecting an agent in an aerosol |
CN112657565B (zh) * | 2020-12-17 | 2022-08-19 | 京东方科技集团股份有限公司 | 微流控通道及其控制方法、微流控芯片和分析装置 |
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US5260957A (en) * | 1992-10-29 | 1993-11-09 | The Charles Stark Draper Laboratory, Inc. | Quantum dot Laser |
-
1993
- 1993-11-15 GB GB939323498A patent/GB9323498D0/en active Pending
-
1994
- 1994-11-15 US US08/648,025 patent/US5906670A/en not_active Expired - Fee Related
- 1994-11-15 EP EP95900856A patent/EP0729394B1/de not_active Expired - Lifetime
- 1994-11-15 AT AT95900856T patent/ATE168605T1/de not_active IP Right Cessation
- 1994-11-15 WO PCT/GB1994/002514 patent/WO1995013891A1/en active IP Right Grant
- 1994-11-15 AU AU10312/95A patent/AU1031295A/en not_active Abandoned
- 1994-11-15 JP JP7514293A patent/JPH11514492A/ja not_active Ceased
- 1994-11-15 ES ES95900856T patent/ES2119362T3/es not_active Expired - Lifetime
- 1994-11-15 DE DE69411945T patent/DE69411945T2/de not_active Expired - Fee Related
- 1994-11-15 CA CA002176569A patent/CA2176569A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006060366B4 (de) * | 2006-12-16 | 2012-08-16 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Verfahren zur Herstellung von von einer Matrix abgedeckten Quantenpunkten |
US8334154B2 (en) | 2006-12-16 | 2012-12-18 | Helmholtz-Zentrum Berlin Fuer Materialien Und Energie Gmbh | Method for the production of quantum dots embedded in a matrix, and quantum dots embedded in a matrix produced using the method |
DE102006060366B8 (de) * | 2006-12-16 | 2013-08-01 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Verfahren zur Herstellung von von einer Matrix abgedeckten Quantenpunkten |
Also Published As
Publication number | Publication date |
---|---|
EP0729394A1 (de) | 1996-09-04 |
US5906670A (en) | 1999-05-25 |
CA2176569A1 (en) | 1995-05-26 |
ES2119362T3 (es) | 1998-10-01 |
GB9323498D0 (en) | 1994-01-05 |
ATE168605T1 (de) | 1998-08-15 |
WO1995013891A1 (en) | 1995-05-26 |
EP0729394B1 (de) | 1998-07-22 |
JPH11514492A (ja) | 1999-12-07 |
AU1031295A (en) | 1995-06-06 |
DE69411945D1 (de) | 1998-08-27 |
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