DE69409257D1 - Integrierte silizium-vakuum-mikropackung für infrarot-geräte - Google Patents

Integrierte silizium-vakuum-mikropackung für infrarot-geräte

Info

Publication number
DE69409257D1
DE69409257D1 DE69409257T DE69409257T DE69409257D1 DE 69409257 D1 DE69409257 D1 DE 69409257D1 DE 69409257 T DE69409257 T DE 69409257T DE 69409257 T DE69409257 T DE 69409257T DE 69409257 D1 DE69409257 D1 DE 69409257D1
Authority
DE
Germany
Prior art keywords
micropack
integrated silicon
infrared devices
silicon vacuum
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69409257T
Other languages
English (en)
Other versions
DE69409257T2 (de
Inventor
Robert Higashi
Jeffrey Ridley
Thomas Stratton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22603539&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69409257(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Honeywell Inc filed Critical Honeywell Inc
Application granted granted Critical
Publication of DE69409257D1 publication Critical patent/DE69409257D1/de
Publication of DE69409257T2 publication Critical patent/DE69409257T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE69409257T 1993-12-13 1994-12-12 Integrierte silizium-vakuum-mikropackung für infrarot-geräte Expired - Lifetime DE69409257T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16649293A 1993-12-13 1993-12-13
PCT/US1994/014335 WO1995017014A1 (en) 1993-12-13 1994-12-12 Integrated silicon vacuum micropackage for infrared devices

Publications (2)

Publication Number Publication Date
DE69409257D1 true DE69409257D1 (de) 1998-04-30
DE69409257T2 DE69409257T2 (de) 1998-09-10

Family

ID=22603539

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69409257T Expired - Lifetime DE69409257T2 (de) 1993-12-13 1994-12-12 Integrierte silizium-vakuum-mikropackung für infrarot-geräte

Country Status (6)

Country Link
US (1) US5895233A (de)
EP (1) EP0734589B1 (de)
JP (1) JPH09506712A (de)
CA (1) CA2179052C (de)
DE (1) DE69409257T2 (de)
WO (1) WO1995017014A1 (de)

Families Citing this family (147)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0773435A3 (de) * 1995-07-21 1998-03-11 Texas Instruments Incorporated Verfahren und Vorrichtungen zur Strahlungsmessung
US5914488A (en) * 1996-03-05 1999-06-22 Mitsubishi Denki Kabushiki Kaisha Infrared detector
US6322670B2 (en) 1996-12-31 2001-11-27 Honeywell International Inc. Flexible high performance microbolometer detector material fabricated via controlled ion beam sputter deposition process
US6359333B1 (en) * 1998-03-31 2002-03-19 Honeywell International Inc. Wafer-pair having deposited layer sealed chambers
US6036872A (en) * 1998-03-31 2000-03-14 Honeywell Inc. Method for making a wafer-pair having sealed chambers
DE69911218D1 (de) * 1998-07-07 2003-10-16 Goodyear Tire & Rubber Kapazitive auswerteschaltung mit zwei ausgängen
US6252229B1 (en) * 1998-07-10 2001-06-26 Boeing North American, Inc. Sealed-cavity microstructure and microbolometer and associated fabrication methods
US6303986B1 (en) 1998-07-29 2001-10-16 Silicon Light Machines Method of and apparatus for sealing an hermetic lid to a semiconductor die
FR2791811B1 (fr) 1999-03-31 2002-06-14 Sofradir Composant electrique ou electronique encapsule de maniere etanche
US6222454B1 (en) * 1999-07-01 2001-04-24 Goal Electronics Inc. Non-contacting temperature sensing device
US6770503B1 (en) * 1999-10-21 2004-08-03 The Charles Stark Draper Laboratory, Inc. Integrated packaging of micromechanical sensors and associated control circuits
US6652452B1 (en) 1999-10-25 2003-11-25 Advanced Medical Electronics Corporation Infrared endoscope with sensor array at the distal tip
US6514789B2 (en) * 1999-10-26 2003-02-04 Motorola, Inc. Component and method for manufacture
DE10004216C2 (de) * 2000-02-01 2002-09-19 Siemens Ag Vorrichtung zur Detektion von Wärmestrahlung und Verwendung der Vorrichtung
US6521477B1 (en) 2000-02-02 2003-02-18 Raytheon Company Vacuum package fabrication of integrated circuit components
US6479320B1 (en) * 2000-02-02 2002-11-12 Raytheon Company Vacuum package fabrication of microelectromechanical system devices with integrated circuit components
US6441481B1 (en) * 2000-04-10 2002-08-27 Analog Devices, Inc. Hermetically sealed microstructure package
US6690014B1 (en) 2000-04-25 2004-02-10 Raytheon Company Microbolometer and method for forming
US6686653B2 (en) 2000-06-28 2004-02-03 Institut National D'optique Miniature microdevice package and process for making thereof
CA2312646A1 (en) * 2000-06-28 2001-12-28 Institut National D'optique Hybrid micropackaging of microdevices
JP2002094082A (ja) 2000-07-11 2002-03-29 Seiko Epson Corp 光素子及びその製造方法並びに電子機器
US6569754B2 (en) 2000-08-24 2003-05-27 The Regents Of The University Of Michigan Method for making a module including a microplatform
FR2816447B1 (fr) 2000-11-07 2003-01-31 Commissariat Energie Atomique Dispositif de detection de rayonnements electromagnetiques tridimensionnel et procede de realisation de ce dispositif
US6657197B2 (en) 2000-12-22 2003-12-02 Honeywell International Inc. Small profile spectrometer
US7365326B2 (en) * 2000-12-26 2008-04-29 Honeywell International Inc. Camera having distortion correction
US6559447B2 (en) 2000-12-26 2003-05-06 Honeywell International Inc. Lightweight infrared camera
US6541772B2 (en) 2000-12-26 2003-04-01 Honeywell International Inc. Microbolometer operating system
US6627892B2 (en) 2000-12-29 2003-09-30 Honeywell International Inc. Infrared detector packaged with improved antireflection element
US6387723B1 (en) 2001-01-19 2002-05-14 Silicon Light Machines Reduced surface charging in silicon-based devices
FR2822541B1 (fr) * 2001-03-21 2003-10-03 Commissariat Energie Atomique Procedes et dispositifs de fabrication de detecteurs de rayonnement
US6707591B2 (en) 2001-04-10 2004-03-16 Silicon Light Machines Angled illumination for a single order light modulator based projection system
US6777681B1 (en) 2001-04-25 2004-08-17 Raytheon Company Infrared detector with amorphous silicon detector elements, and a method of making it
US6890834B2 (en) 2001-06-11 2005-05-10 Matsushita Electric Industrial Co., Ltd. Electronic device and method for manufacturing the same
US6747781B2 (en) 2001-06-25 2004-06-08 Silicon Light Machines, Inc. Method, apparatus, and diffuser for reducing laser speckle
US6782205B2 (en) 2001-06-25 2004-08-24 Silicon Light Machines Method and apparatus for dynamic equalization in wavelength division multiplexing
TW583049B (en) * 2001-07-20 2004-04-11 Getters Spa Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices
TW533188B (en) * 2001-07-20 2003-05-21 Getters Spa Support for microelectronic, microoptoelectronic or micromechanical devices
US6646778B2 (en) 2001-08-01 2003-11-11 Silicon Light Machines Grating light valve with encapsulated dampening gas
US6829092B2 (en) 2001-08-15 2004-12-07 Silicon Light Machines, Inc. Blazed grating light valve
US6856007B2 (en) * 2001-08-28 2005-02-15 Tessera, Inc. High-frequency chip packages
US6930364B2 (en) * 2001-09-13 2005-08-16 Silicon Light Machines Corporation Microelectronic mechanical system and methods
JP2003106895A (ja) 2001-10-01 2003-04-09 Nec Corp 熱型赤外線検出素子及びその製造方法
EP1310380A1 (de) * 2001-11-07 2003-05-14 SensoNor asa Eine mikro-mechanische Vorrichtung und Verfahren zu seiner Herstellung
FR2834282B1 (fr) 2001-12-28 2004-02-27 Commissariat Energie Atomique Procede de renforcement d'une microstructure mecanique
US6800238B1 (en) 2002-01-15 2004-10-05 Silicon Light Machines, Inc. Method for domain patterning in low coercive field ferroelectrics
WO2003062773A1 (en) * 2002-01-24 2003-07-31 Pei Electronics, Inc. Compact integrated infrared scene projector
US6844606B2 (en) * 2002-02-04 2005-01-18 Delphi Technologies, Inc. Surface-mount package for an optical sensing device and method of manufacture
US6762072B2 (en) * 2002-03-06 2004-07-13 Robert Bosch Gmbh SI wafer-cap wafer bonding method using local laser energy, device produced by the method, and system used in the method
CA2485022A1 (en) * 2002-04-15 2003-10-23 Schott Ag Method for connecting substrates and composite element
JP2003309271A (ja) 2002-04-18 2003-10-31 Matsushita Electric Ind Co Ltd 集積回路素子の実装構造および実装方法
US7276798B2 (en) * 2002-05-23 2007-10-02 Honeywell International Inc. Integral topside vacuum package
EP1369929B1 (de) * 2002-05-27 2016-08-03 STMicroelectronics Srl Herstellungsverfahren von verkapselten optischen Sensoren und so hergestellter verkapselter optischer Sensor
US6728023B1 (en) 2002-05-28 2004-04-27 Silicon Light Machines Optical device arrays with optimized image resolution
US6767751B2 (en) 2002-05-28 2004-07-27 Silicon Light Machines, Inc. Integrated driver process flow
US6822797B1 (en) 2002-05-31 2004-11-23 Silicon Light Machines, Inc. Light modulator structure for producing high-contrast operation using zero-order light
US7308314B2 (en) * 2002-06-06 2007-12-11 Advanced Medical Electronics Method and apparatus for sensory substitution, vision prosthesis, or low-vision enhancement utilizing thermal sensing
US6829258B1 (en) 2002-06-26 2004-12-07 Silicon Light Machines, Inc. Rapidly tunable external cavity laser
US6714337B1 (en) 2002-06-28 2004-03-30 Silicon Light Machines Method and device for modulating a light beam and having an improved gamma response
US6813059B2 (en) 2002-06-28 2004-11-02 Silicon Light Machines, Inc. Reduced formation of asperities in contact micro-structures
FR2842022B1 (fr) * 2002-07-03 2005-05-06 Commissariat Energie Atomique Dispositif de maintien d'un objet sous vide et procedes de fabrication de ce dispositif, application aux detecteurs intrarouges non refroidis
US6723579B2 (en) * 2002-07-12 2004-04-20 Analog Devices, Inc. Semiconductor wafer comprising micro-machined components and a method for fabricating the semiconductor wafer
DE10232190A1 (de) * 2002-07-16 2004-02-05 Austriamicrosystems Ag Verfahren zur Herstellung eines Bauelements mit tiefliegenden Anschlußflächen
US6801354B1 (en) 2002-08-20 2004-10-05 Silicon Light Machines, Inc. 2-D diffraction grating for substantially eliminating polarization dependent losses
US20040108588A1 (en) * 2002-09-24 2004-06-10 Cookson Electronics, Inc. Package for microchips
US6712480B1 (en) 2002-09-27 2004-03-30 Silicon Light Machines Controlled curvature of stressed micro-structures
US7115893B1 (en) * 2002-12-19 2006-10-03 Honeywell International Inc. Chemical agent sensor having a stationary linear fringe interferometer
US6946644B2 (en) * 2002-12-19 2005-09-20 Honeywell International Inc. Sensor for multi-band radiation detection within a field of view
JP4342174B2 (ja) * 2002-12-27 2009-10-14 新光電気工業株式会社 電子デバイス及びその製造方法
US20040147056A1 (en) * 2003-01-29 2004-07-29 Mckinnell James C. Micro-fabricated device and method of making
US6829077B1 (en) 2003-02-28 2004-12-07 Silicon Light Machines, Inc. Diffractive light modulator with dynamically rotatable diffraction plane
US6806997B1 (en) 2003-02-28 2004-10-19 Silicon Light Machines, Inc. Patterned diffractive light modulator ribbon for PDL reduction
US6958478B2 (en) 2003-05-19 2005-10-25 Indigo Systems Corporation Microbolometer detector with high fill factor and transducers having enhanced thermal isolation
KR101078621B1 (ko) * 2003-07-03 2011-11-01 테쎄라 테크놀로지스 아일랜드 리미티드 집적회로 디바이스를 패키징하기 위한 방법 및 장치
US20050012212A1 (en) * 2003-07-17 2005-01-20 Cookson Electronics, Inc. Reconnectable chip interface and chip package
US7012326B1 (en) 2003-08-25 2006-03-14 Xilinx, Inc. Lid and method of employing a lid on an integrated circuit
US20050085016A1 (en) * 2003-09-26 2005-04-21 Tessera, Inc. Structure and method of making capped chips using sacrificial layer
US20050067681A1 (en) * 2003-09-26 2005-03-31 Tessera, Inc. Package having integral lens and wafer-scale fabrication method therefor
US7084010B1 (en) 2003-10-17 2006-08-01 Raytheon Company Integrated package design and method for a radiation sensing device
US7871660B2 (en) * 2003-11-14 2011-01-18 Saes Getters, S.P.A. Preparation of getter surfaces using caustic chemicals
US20050139984A1 (en) * 2003-12-19 2005-06-30 Tessera, Inc. Package element and packaged chip having severable electrically conductive ties
EP1695054A1 (de) * 2003-12-20 2006-08-30 Honeywell International Inc. Mehrbandsensor
JP2005241457A (ja) * 2004-02-26 2005-09-08 Hamamatsu Photonics Kk 赤外線センサ及びその製造方法
EP1720794A2 (de) * 2004-03-01 2006-11-15 Tessera, Inc. Verkapselung von akustischen und elektromagnetischen wandlerchips
US7332411B2 (en) * 2004-08-12 2008-02-19 Hewlett-Packard Development Company, Lp Systems and methods for wafer bonding by localized induction heating
US7204737B2 (en) 2004-09-23 2007-04-17 Temic Automotive Of North America, Inc. Hermetically sealed microdevice with getter shield
GB0424934D0 (en) * 2004-11-12 2004-12-15 Qinetiq Ltd Infrared detector
CN100388448C (zh) * 2005-02-01 2008-05-14 探微科技股份有限公司 晶片级封装的方法
US20060183270A1 (en) * 2005-02-14 2006-08-17 Tessera, Inc. Tools and methods for forming conductive bumps on microelectronic elements
US8143095B2 (en) * 2005-03-22 2012-03-27 Tessera, Inc. Sequential fabrication of vertical conductive interconnects in capped chips
ITMI20050616A1 (it) * 2005-04-12 2006-10-13 Getters Spa Processo per la formazione di depositi getter miniaturizzati e depositi getrter cosi'ottenuti
DE102005024512B3 (de) * 2005-05-26 2007-02-08 Jenoptik Laser, Optik, Systeme Gmbh Verfahren zur Herstellung von in ein Gehäuse hermetisch dicht einlötbaren Fensterelementen
US7485956B2 (en) * 2005-08-16 2009-02-03 Tessera, Inc. Microelectronic package optionally having differing cover and device thermal expansivities
US7388284B1 (en) 2005-10-14 2008-06-17 Xilinx, Inc. Integrated circuit package and method of attaching a lid to a substrate of an integrated circuit
US20070114643A1 (en) * 2005-11-22 2007-05-24 Honeywell International Inc. Mems flip-chip packaging
US7491567B2 (en) * 2005-11-22 2009-02-17 Honeywell International Inc. MEMS device packaging methods
ITMI20052343A1 (it) 2005-12-06 2007-06-07 Getters Spa Processo per la produzione di dispositivi micromeccanici contenenti un materiale getter e dispositivi cosi'prodotti
US7936062B2 (en) * 2006-01-23 2011-05-03 Tessera Technologies Ireland Limited Wafer level chip packaging
US20070190747A1 (en) * 2006-01-23 2007-08-16 Tessera Technologies Hungary Kft. Wafer level packaging to lidded chips
US7462831B2 (en) 2006-01-26 2008-12-09 L-3 Communications Corporation Systems and methods for bonding
US7459686B2 (en) * 2006-01-26 2008-12-02 L-3 Communications Corporation Systems and methods for integrating focal plane arrays
US7655909B2 (en) * 2006-01-26 2010-02-02 L-3 Communications Corporation Infrared detector elements and methods of forming same
US20080029879A1 (en) * 2006-03-01 2008-02-07 Tessera, Inc. Structure and method of making lidded chips
US7470904B1 (en) * 2006-03-20 2008-12-30 Flir Systems, Inc. Infrared camera packaging
DE102006019080B3 (de) * 2006-04-25 2007-08-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Herstellungsverfahren für ein gehäustes Bauelement
US7501626B2 (en) * 2006-06-02 2009-03-10 Honeywell International Inc. Micromechanical thermal sensor
US7718965B1 (en) 2006-08-03 2010-05-18 L-3 Communications Corporation Microbolometer infrared detector elements and methods for forming same
US8153980B1 (en) 2006-11-30 2012-04-10 L-3 Communications Corp. Color correction for radiation detectors
US20080128620A1 (en) * 2006-12-04 2008-06-05 Krellner Theodore J Method of making a thermopile detector and package
US8604605B2 (en) 2007-01-05 2013-12-10 Invensas Corp. Microelectronic assembly with multi-layer support structure
DE102007024902B8 (de) * 2007-05-29 2010-12-30 Pyreos Ltd. Vorrichtung mit Membranstruktur zur Detektion von Wärmestrahlung, Verfahren zum Herstellen und Verwendung der Vorrichtung
US7713786B2 (en) * 2007-07-19 2010-05-11 Innovative Micro Technology Etching/bonding chamber for encapsulated devices and method of use
US7750301B1 (en) 2007-10-02 2010-07-06 Flir Systems, Inc. Microbolometer optical cavity tuning and calibration systems and methods
US8981296B2 (en) 2007-11-06 2015-03-17 Honeywell International Inc. Terahertz dispersive spectrometer system
US20090114822A1 (en) * 2007-11-06 2009-05-07 Honeywell International Inc. Terahertz dispersive spectrometer system
US7898498B2 (en) * 2008-03-20 2011-03-01 Honeywell International Inc. Transducer for high-frequency antenna coupling and related apparatus and method
WO2010023654A1 (en) * 2008-08-28 2010-03-04 Opgal Optronic Industries Ltd. Method for detecting changes in a vacuum state in a detector of a thermal camera
FR2936868B1 (fr) 2008-10-07 2011-02-18 Ulis Detecteur thermique a micro-encapsulation.
JP2010127892A (ja) * 2008-12-01 2010-06-10 Seiko Instruments Inc 赤外線センサ
JP5123223B2 (ja) * 2009-01-27 2013-01-23 パナソニック株式会社 赤外線センサ素子のパッケージ
US8451176B2 (en) * 2009-06-11 2013-05-28 Honeywell International Inc. Method for achieving intrinsic safety compliance in wireless devices using isolated overlapping grounds and related apparatus
FR2946777B1 (fr) * 2009-06-12 2011-07-22 Commissariat Energie Atomique Dispositif de detection et/ou d'emission de rayonnement electromagnetique et procede de fabrication d'un tel dispositif
EP2264765A1 (de) 2009-06-19 2010-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gehäuse für eine Infrarot-Mikrovorrichtung und Verfahren zur Herstellung eines solchen Gehäuses
US8471206B1 (en) * 2009-07-14 2013-06-25 Flir Systems, Inc. Infrared detector vacuum test systems and methods
US8729474B1 (en) 2009-10-09 2014-05-20 Flir Systems, Inc. Microbolometer contact systems and methods
US9658111B2 (en) 2009-10-09 2017-05-23 Flir Systems, Inc. Microbolometer contact systems and methods
US8362609B1 (en) 2009-10-27 2013-01-29 Xilinx, Inc. Integrated circuit package and method of forming an integrated circuit package
US8796798B2 (en) * 2010-01-27 2014-08-05 Ricoh Company, Ltd. Imaging module, fabricating method therefor, and imaging device
US8810028B1 (en) 2010-06-30 2014-08-19 Xilinx, Inc. Integrated circuit packaging devices and methods
US8765514B1 (en) 2010-11-12 2014-07-01 L-3 Communications Corp. Transitioned film growth for conductive semiconductor materials
US8608894B2 (en) * 2010-11-23 2013-12-17 Raytheon Company Wafer level packaged focal plane array
US8878071B2 (en) 2011-01-20 2014-11-04 International Business Machines Corporation Integrated device with defined heat flow
US8395229B2 (en) 2011-03-11 2013-03-12 Institut National D'optique MEMS-based getter microdevice
US9748214B2 (en) 2011-10-21 2017-08-29 Santa Barbara Infrared, Inc. Techniques for tiling arrays of pixel elements and fabricating hybridized tiles
EP2769407B1 (de) 2011-10-21 2017-05-10 Santa Barbara Infrared Inc. Verfahren zur kachelung von pixelelementanordnungen
WO2013139403A1 (en) 2012-03-23 2013-09-26 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Electromagnetic radiation micro device, wafer element and method for manufacturing such a micro device
CN102723345B (zh) * 2012-05-31 2015-04-01 苏州晶方半导体科技股份有限公司 红外传感器封装结构及其封装方法
US9427776B2 (en) * 2012-08-23 2016-08-30 Raytheon Company Method of stress relief in anti-reflective coated cap wafers for wafer level packaged infrared focal plane arrays
FR2999803B1 (fr) 2012-12-17 2018-02-02 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif de detection infrarouge
FR2999805B1 (fr) 2012-12-17 2017-12-22 Commissariat Energie Atomique Procede de realisation d'un dispositif de detection infrarouge
US9771258B2 (en) * 2015-06-24 2017-09-26 Raytheon Company Wafer level MEMS package including dual seal ring
US9570321B1 (en) 2015-10-20 2017-02-14 Raytheon Company Use of an external getter to reduce package pressure
FR3047842B1 (fr) * 2016-02-12 2018-05-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Composant electronique a resistance metallique suspendue dans une cavite fermee
FR3066044B1 (fr) * 2017-05-02 2020-02-21 Commissariat A L'energie Atomique Et Aux Energies Alternatives Detecteur de rayonnement electromagnetique, encapsule par report de couche mince.
JP7292077B2 (ja) * 2018-07-11 2023-06-16 三菱電機株式会社 パッケージ素子の製造方法およびパッケージ素子
FR3099953B1 (fr) * 2019-08-14 2021-07-30 Elichens Procédé de fabrication collective d'un détecteur pyroélectrique
EP3971543B1 (de) 2020-09-17 2024-02-07 Lynred Verfahren zur herstellung eines infrarotdetektors und zugehöriger infrarotdetektor
WO2022254838A1 (ja) * 2021-06-03 2022-12-08 三菱電機株式会社 半導体センサ及びその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577037A (en) * 1968-07-05 1971-05-04 Ibm Diffused electrical connector apparatus and method of making same
US3973146A (en) * 1974-03-18 1976-08-03 North American Philips Corporation Signal detector comprising field effect transistors
US4122479A (en) * 1975-01-31 1978-10-24 Hitachi, Ltd. Optoelectronic device having control circuit for light emitting element and circuit for light receiving element integrated in a semiconductor body
US4369458A (en) * 1980-07-01 1983-01-18 Westinghouse Electric Corp. Self-aligned, flip-chip focal plane array configuration
GB2116363B (en) * 1982-03-03 1985-10-16 Philips Electronic Associated Multi-level infra-red detectors and their manufacture
GB2121598A (en) * 1982-04-27 1983-12-21 Marconi Co Ltd Sealing optoelectronic packages
US4784970A (en) * 1987-11-18 1988-11-15 Grumman Aerospace Corporation Process for making a double wafer moated signal processor
JPH0298965A (ja) * 1988-10-05 1990-04-11 Fujitsu Ltd 多素子赤外線検知センサ
AU631734B2 (en) * 1990-04-18 1992-12-03 Terumo Kabushiki Kaisha Infrared ray sensor and method of manufacturing the same
DE69313337T2 (de) * 1992-04-17 1998-01-02 Terumo Corp Infrarotsensor und Verfahren für dessen Herstellung
US5318666A (en) * 1993-04-19 1994-06-07 Texas Instruments Incorporated Method for via formation and type conversion in group II and group VI materials

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CA2179052A1 (en) 1995-06-22
DE69409257T2 (de) 1998-09-10
EP0734589B1 (de) 1998-03-25
EP0734589A1 (de) 1996-10-02
WO1995017014A1 (en) 1995-06-22
JPH09506712A (ja) 1997-06-30
CA2179052C (en) 2001-02-13
US5895233A (en) 1999-04-20

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