DE69332164D1 - Anodische Verbindungsverfahren - Google Patents

Anodische Verbindungsverfahren

Info

Publication number
DE69332164D1
DE69332164D1 DE69332164T DE69332164T DE69332164D1 DE 69332164 D1 DE69332164 D1 DE 69332164D1 DE 69332164 T DE69332164 T DE 69332164T DE 69332164 T DE69332164 T DE 69332164T DE 69332164 D1 DE69332164 D1 DE 69332164D1
Authority
DE
Germany
Prior art keywords
connection method
anodic connection
anodic
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69332164T
Other languages
English (en)
Other versions
DE69332164T2 (de
Inventor
Masatake Akaike
Takayuki Yagi
Masahiro Fushimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69332164D1 publication Critical patent/DE69332164D1/de
Publication of DE69332164T2 publication Critical patent/DE69332164T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/093—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by photoelectric pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
DE69332164T 1992-10-22 1993-10-21 Anodische Verbindungsverfahren Expired - Fee Related DE69332164T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28434192A JP3300060B2 (ja) 1992-10-22 1992-10-22 加速度センサー及びその製造方法

Publications (2)

Publication Number Publication Date
DE69332164D1 true DE69332164D1 (de) 2002-09-05
DE69332164T2 DE69332164T2 (de) 2002-12-12

Family

ID=17677325

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69332164T Expired - Fee Related DE69332164T2 (de) 1992-10-22 1993-10-21 Anodische Verbindungsverfahren

Country Status (4)

Country Link
US (1) US5673476A (de)
EP (1) EP0594182B1 (de)
JP (1) JP3300060B2 (de)
DE (1) DE69332164T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4426288C2 (de) * 1994-07-26 2003-05-28 Suss Microtec Test Sys Gmbh Elektrode zum anodischen Bonden
DE19616970B4 (de) * 1996-04-27 2012-04-12 Robert Bosch Gmbh Verfahren zur Herstellung von mikromechanische Strukturen aufweisenden Halbleiterbauelementen
US5936294A (en) * 1996-05-28 1999-08-10 Motorola, Inc. Optical semiconductor component and method of fabrication
IL122947A (en) * 1998-01-15 2001-03-19 Armament Dev Authority State O Micro-electro-opto-mechanical inertial sensor with integrative optical sensing
DE19810756A1 (de) * 1998-03-12 1999-09-23 Fraunhofer Ges Forschung Sensoranordnung zur Messung von Druck, Kraft oder Meßgrößen, die sich auf Druck oder Kraft zurückführen lassen, Verfahren zur Herstellung der Sensoranordnung, Sensorelement und Verfahren zur Herstellung des Sensorelements
US6506087B1 (en) * 1998-05-01 2003-01-14 Canon Kabushiki Kaisha Method and manufacturing an image forming apparatus having improved spacers
JP2000035396A (ja) 1998-07-16 2000-02-02 Canon Inc 微小突起を有するプローブ、及びその製造方法
JP3489551B2 (ja) * 2000-09-08 2004-01-19 株式会社村田製作所 真空容器の製造方法
FR2822817B1 (fr) * 2001-03-28 2003-05-30 Commissariat Energie Atomique Procede de fabrication d'une structure a membrane micro-usinee
JP2004301554A (ja) * 2003-03-28 2004-10-28 Canon Inc 電位測定装置及び画像形成装置
KR100490756B1 (ko) * 2003-06-10 2005-05-24 전자부품연구원 캡을 이용한 양극 접합 방법
FR2857502B1 (fr) * 2003-07-10 2006-02-24 Soitec Silicon On Insulator Substrats pour systemes contraints
DE10354132A1 (de) * 2003-11-19 2005-06-23 Daimlerchrysler Ag Verfahren zur Herstellung und zum Betreiben eines Sensors
JP2007057349A (ja) 2005-08-24 2007-03-08 Seiko Epson Corp 圧力センサ
JP4817287B2 (ja) * 2005-09-12 2011-11-16 セイコーインスツル株式会社 力学量センサの製造方法
JP4813246B2 (ja) * 2006-04-28 2011-11-09 ユニヴァーシティ オブ サウサンプトン ガラス物品への部材の接合方法
US8062956B2 (en) * 2009-08-26 2011-11-22 Corning Incorporated Semiconductor on insulator and methods of forming same using temperature gradient in an anodic bonding process

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1138401A (en) * 1965-05-06 1969-01-01 Mallory & Co Inc P R Bonding
JPS54131892A (en) * 1978-04-05 1979-10-13 Hitachi Ltd Semiconductor pressure converter
US4400869A (en) * 1981-02-12 1983-08-30 Becton Dickinson And Company Process for producing high temperature pressure transducers and semiconductors
US4384899A (en) * 1981-11-09 1983-05-24 Motorola Inc. Bonding method adaptable for manufacturing capacitive pressure sensing elements
US4452624A (en) * 1982-12-21 1984-06-05 The United States Of America As Represented By The Secretary Of The Navy Method for bonding insulator to insulator
GB2146566B (en) * 1983-09-16 1986-11-26 Standard Telephones Cables Ltd Electrostatic bonding
US4643532A (en) * 1985-06-24 1987-02-17 At&T Bell Laboratories Field-assisted bonding method and articles produced thereby
JPS62248264A (ja) * 1986-04-21 1987-10-29 Nippon Denso Co Ltd 半導体式加速度センサの製造方法
DE3702412A1 (de) * 1987-01-28 1988-08-18 Philips Patentverwaltung Druckaufnehmer mit einem siliziumkoerper
FI78784C (fi) * 1988-01-18 1989-09-11 Vaisala Oy Tryckgivarkonstruktion och foerfarande foer framstaellning daerav.
DE4009090A1 (de) * 1990-03-21 1991-09-26 Bosch Gmbh Robert Verfahren zur herstellung von mehrschichtigen siliziumstrukturen
JP2527834B2 (ja) * 1990-07-20 1996-08-28 三菱電機株式会社 陽極接合法
US5295395A (en) * 1991-02-07 1994-03-22 Hocker G Benjamin Diaphragm-based-sensors
ATE231287T1 (de) * 1991-09-30 2003-02-15 Canon Kk Verfahren für anodische bindung mit lichtstrahlung

Also Published As

Publication number Publication date
US5673476A (en) 1997-10-07
EP0594182A3 (en) 1997-09-24
EP0594182B1 (de) 2002-07-31
DE69332164T2 (de) 2002-12-12
JPH06132544A (ja) 1994-05-13
EP0594182A2 (de) 1994-04-27
JP3300060B2 (ja) 2002-07-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee