DE69326630T2 - Beleuchtungsvorrichtung für einen Projektionsbelichtungsapparat - Google Patents
Beleuchtungsvorrichtung für einen ProjektionsbelichtungsapparatInfo
- Publication number
- DE69326630T2 DE69326630T2 DE69326630T DE69326630T DE69326630T2 DE 69326630 T2 DE69326630 T2 DE 69326630T2 DE 69326630 T DE69326630 T DE 69326630T DE 69326630 T DE69326630 T DE 69326630T DE 69326630 T2 DE69326630 T2 DE 69326630T2
- Authority
- DE
- Germany
- Prior art keywords
- light source
- illumination device
- secondary light
- ring
- exposure apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10863292A JP3278896B2 (ja) | 1992-03-31 | 1992-03-31 | 照明装置及びそれを用いた投影露光装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69326630D1 DE69326630D1 (de) | 1999-11-11 |
| DE69326630T2 true DE69326630T2 (de) | 2000-04-06 |
Family
ID=14489725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69326630T Expired - Lifetime DE69326630T2 (de) | 1992-03-31 | 1993-03-31 | Beleuchtungsvorrichtung für einen Projektionsbelichtungsapparat |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US5345292A (de) |
| EP (1) | EP0564264B1 (de) |
| JP (1) | JP3278896B2 (de) |
| AT (1) | ATE185429T1 (de) |
| DE (1) | DE69326630T2 (de) |
Families Citing this family (85)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6411377B1 (en) * | 1991-04-02 | 2002-06-25 | Hitachi, Ltd. | Optical apparatus for defect and particle size inspection |
| US5424803A (en) * | 1991-08-09 | 1995-06-13 | Canon Kabushiki Kaisha | Projection exposure apparatus and semiconductor device manufacturing method |
| JPH0567558A (ja) * | 1991-09-06 | 1993-03-19 | Nikon Corp | 露光方法 |
| US6078380A (en) * | 1991-10-08 | 2000-06-20 | Nikon Corporation | Projection exposure apparatus and method involving variation and correction of light intensity distributions, detection and control of imaging characteristics, and control of exposure |
| JP3278896B2 (ja) * | 1992-03-31 | 2002-04-30 | キヤノン株式会社 | 照明装置及びそれを用いた投影露光装置 |
| NL194929C (nl) * | 1992-10-20 | 2003-07-04 | Samsung Electronics Co Ltd | Projectiebelichtingssysteem. |
| JP3316937B2 (ja) * | 1992-11-24 | 2002-08-19 | 株式会社ニコン | 照明光学装置、露光装置、及び該露光装置を用いた転写方法 |
| JP2894922B2 (ja) * | 1993-05-14 | 1999-05-24 | 日本電気株式会社 | 投影露光方法および装置 |
| US5552856A (en) * | 1993-06-14 | 1996-09-03 | Nikon Corporation | Projection exposure apparatus |
| JP3291849B2 (ja) * | 1993-07-15 | 2002-06-17 | 株式会社ニコン | 露光方法、デバイス形成方法、及び露光装置 |
| JP3275575B2 (ja) * | 1993-10-27 | 2002-04-15 | キヤノン株式会社 | 投影露光装置及び該投影露光装置を用いたデバイスの製造方法 |
| JP3057998B2 (ja) * | 1994-02-16 | 2000-07-04 | キヤノン株式会社 | 照明装置及びそれを用いた投影露光装置 |
| JP3456597B2 (ja) * | 1994-04-14 | 2003-10-14 | 株式会社ニコン | 露光装置 |
| EP0687956B2 (de) | 1994-06-17 | 2005-11-23 | Carl Zeiss SMT AG | Beleuchtungseinrichtung |
| JP3060357B2 (ja) * | 1994-06-22 | 2000-07-10 | キヤノン株式会社 | 走査型露光装置及び該走査型露光装置を用いてデバイスを製造する方法 |
| JP3458549B2 (ja) | 1994-08-26 | 2003-10-20 | ソニー株式会社 | パターン形成方法および該方法を用いた半導体デバイス製造方法と装置 |
| KR100210569B1 (ko) * | 1995-09-29 | 1999-07-15 | 미따라이 하지메 | 노광방법 및 노광장치, 그리고 이를 이용한 디바이스제조방법 |
| JPH10153866A (ja) * | 1996-11-22 | 1998-06-09 | Nikon Corp | 照明装置および該照明装置を備えた露光装置 |
| US6259513B1 (en) * | 1996-11-25 | 2001-07-10 | Svg Lithography Systems, Inc. | Illumination system with spatially controllable partial coherence |
| US6628370B1 (en) | 1996-11-25 | 2003-09-30 | Mccullough Andrew W. | Illumination system with spatially controllable partial coherence compensating for line width variances in a photolithographic system |
| US7130129B2 (en) | 1996-12-21 | 2006-10-31 | Carl Zeiss Smt Ag | Reticle-masking objective with aspherical lenses |
| DE19653983A1 (de) * | 1996-12-21 | 1998-06-25 | Zeiss Carl Fa | REMA-Objektiv für Mikrolithographie-Projektionsbelichtungsanlagen |
| US5981954A (en) * | 1997-01-16 | 1999-11-09 | Canon Kabushiki Kaisha | Electron beam exposure apparatus |
| JP3689516B2 (ja) * | 1997-01-29 | 2005-08-31 | キヤノン株式会社 | 電子ビーム露光装置 |
| JPH10214779A (ja) * | 1997-01-31 | 1998-08-11 | Canon Inc | 電子ビーム露光方法及び該方法を用いたデバイス製造方法 |
| US6107636A (en) * | 1997-02-07 | 2000-08-22 | Canon Kabushiki Kaisha | Electron beam exposure apparatus and its control method |
| US6027865A (en) * | 1997-02-10 | 2000-02-22 | Texas Instruments Incorporated | Method for accurate patterning of photoresist during lithography process |
| EP0874283B1 (de) * | 1997-04-23 | 2003-09-03 | Nikon Corporation | Optischer Belichtungsapparat und optisches Reinigungsverfahren |
| JP3787417B2 (ja) * | 1997-06-11 | 2006-06-21 | キヤノン株式会社 | 電子ビーム露光方法及び電子ビーム露光装置 |
| AU8356298A (en) * | 1997-07-22 | 1999-02-16 | Nikon Corporation | Projection exposure method, projection aligner, and methods of manufacturing andoptically cleaning the aligner |
| JP3264224B2 (ja) | 1997-08-04 | 2002-03-11 | キヤノン株式会社 | 照明装置及びそれを用いた投影露光装置 |
| AU1262799A (en) * | 1997-12-05 | 1999-06-28 | Nikon Corporation | Exposure method and exposure device |
| DE69931690T2 (de) * | 1998-04-08 | 2007-06-14 | Asml Netherlands B.V. | Lithographischer Apparat |
| EP0949541B1 (de) * | 1998-04-08 | 2006-06-07 | ASML Netherlands B.V. | Lithographischer Apparat |
| DE19830438A1 (de) * | 1998-07-08 | 2000-01-13 | Zeiss Carl Fa | Verfahren zur Dekontamination von Mikrolithographie-Projektionsbelichtungsanlagen |
| US6480263B1 (en) * | 1998-10-22 | 2002-11-12 | Asml Netherlands B.V. | Apparatus and method for phase shift photomasking |
| US6563567B1 (en) | 1998-12-17 | 2003-05-13 | Nikon Corporation | Method and apparatus for illuminating a surface using a projection imaging apparatus |
| US6392742B1 (en) | 1999-06-01 | 2002-05-21 | Canon Kabushiki Kaisha | Illumination system and projection exposure apparatus |
| US6600550B1 (en) * | 1999-06-03 | 2003-07-29 | Nikon Corporation | Exposure apparatus, a photolithography method, and a device manufactured by the same |
| JP2000356741A (ja) | 1999-06-14 | 2000-12-26 | Canon Inc | 投影光学系 |
| JP3359302B2 (ja) | 1999-06-14 | 2002-12-24 | キヤノン株式会社 | 投影露光装置 |
| US6867922B1 (en) | 1999-06-14 | 2005-03-15 | Canon Kabushiki Kaisha | Projection optical system and projection exposure apparatus using the same |
| JP4717974B2 (ja) | 1999-07-13 | 2011-07-06 | 株式会社ニコン | 反射屈折光学系及び該光学系を備える投影露光装置 |
| TW587199B (en) | 1999-09-29 | 2004-05-11 | Asml Netherlands Bv | Lithographic method and apparatus |
| JP2001343589A (ja) * | 2000-03-31 | 2001-12-14 | Canon Inc | 投影光学系、および該投影光学系による投影露光装置、デバイス製造方法 |
| JP3927753B2 (ja) | 2000-03-31 | 2007-06-13 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| JP4545874B2 (ja) * | 2000-04-03 | 2010-09-15 | キヤノン株式会社 | 照明光学系、および該照明光学系を備えた露光装置と該露光装置によるデバイスの製造方法 |
| JP2001326171A (ja) * | 2000-05-18 | 2001-11-22 | Canon Inc | 照明装置 |
| US6879390B1 (en) * | 2000-08-10 | 2005-04-12 | Kla-Tencor Technologies Corporation | Multiple beam inspection apparatus and method |
| AU2002357241A1 (en) * | 2001-12-17 | 2003-06-30 | Cyberoptics Semiconductor, Inc. | Semiconductor wafer carrier mapping sensor |
| US6888615B2 (en) * | 2002-04-23 | 2005-05-03 | Asml Holding N.V. | System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position |
| JP3950732B2 (ja) * | 2002-04-23 | 2007-08-01 | キヤノン株式会社 | 照明光学系、照明方法及び露光装置 |
| JP3950731B2 (ja) * | 2002-04-23 | 2007-08-01 | キヤノン株式会社 | 照明光学系、当該照明光学系を有する露光装置及びデバイス製造方法 |
| JP4235410B2 (ja) | 2002-08-01 | 2009-03-11 | キヤノン株式会社 | 露光方法 |
| KR101124179B1 (ko) | 2003-04-09 | 2012-03-27 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
| JP2004343082A (ja) * | 2003-04-17 | 2004-12-02 | Asml Netherlands Bv | 凹面および凸面を含む集光器を備えたリトグラフ投影装置 |
| EP1469347A1 (de) * | 2003-04-17 | 2004-10-20 | ASML Netherlands B.V. | Lithographischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung |
| DE10322375A1 (de) * | 2003-05-13 | 2004-12-02 | Carl Zeiss Smt Ag | Polarisationsoptimiertes Axiconsystem und Beleuchtungssystem mit einem solchen Axiconsystem |
| US7511886B2 (en) | 2003-05-13 | 2009-03-31 | Carl Zeiss Smt Ag | Optical beam transformation system and illumination system comprising an optical beam transformation system |
| JP2004347777A (ja) * | 2003-05-21 | 2004-12-09 | Olympus Corp | 全反射蛍光顕微鏡 |
| JP3977311B2 (ja) | 2003-10-10 | 2007-09-19 | キヤノン株式会社 | 照明装置及び当該照明装置を有する露光装置 |
| TWI474132B (zh) * | 2003-10-28 | 2015-02-21 | 尼康股份有限公司 | 照明光學裝置、投影曝光裝置、曝光方法以及元件製造方法 |
| TWI612338B (zh) | 2003-11-20 | 2018-01-21 | 尼康股份有限公司 | 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法 |
| US7542217B2 (en) * | 2003-12-19 | 2009-06-02 | Carl Zeiss Smt Ag | Beam reshaping unit for an illumination system of a microlithographic projection exposure apparatus |
| KR101165862B1 (ko) | 2004-01-16 | 2012-07-17 | 칼 짜이스 에스엠티 게엠베하 | 편광변조 광학소자 |
| US20070019179A1 (en) | 2004-01-16 | 2007-01-25 | Damian Fiolka | Polarization-modulating optical element |
| US8270077B2 (en) | 2004-01-16 | 2012-09-18 | Carl Zeiss Smt Gmbh | Polarization-modulating optical element |
| TWI395068B (zh) | 2004-01-27 | 2013-05-01 | 尼康股份有限公司 | 光學系統、曝光裝置以及曝光方法 |
| TWI360837B (en) | 2004-02-06 | 2012-03-21 | Nikon Corp | Polarization changing device, optical illumination |
| US7324280B2 (en) * | 2004-05-25 | 2008-01-29 | Asml Holding N.V. | Apparatus for providing a pattern of polarization |
| US7274434B2 (en) * | 2004-11-24 | 2007-09-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2006303196A (ja) * | 2005-04-20 | 2006-11-02 | Canon Inc | 測定装置及びそれを有する露光装置 |
| KR101455551B1 (ko) | 2005-05-12 | 2014-10-27 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
| JP2006324311A (ja) * | 2005-05-17 | 2006-11-30 | Canon Inc | 波面収差測定装置及びそれを有する露光装置 |
| WO2007022922A2 (de) | 2005-08-23 | 2007-03-01 | Carl Zeiss Smt Ag | Austauschvorrichtung für ein optisches element |
| US20070109520A1 (en) * | 2005-11-17 | 2007-05-17 | Whitney Theodore R | Modular illuminator for a scanning printer |
| JP2008181980A (ja) | 2007-01-23 | 2008-08-07 | Canon Inc | 照明装置の光強度分布の調整方法及び評価方法、照明装置、露光装置及びデバイス製造方法 |
| TWM324785U (en) * | 2007-04-16 | 2008-01-01 | Young Optics Inc | Illumination system |
| JP5267029B2 (ja) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | 照明光学装置、露光装置及びデバイスの製造方法 |
| US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
| US20090257043A1 (en) * | 2008-04-14 | 2009-10-15 | Nikon Corporation | Illumination optical system, exposure apparatus, device manufacturing method, and exposure optical system |
| JP2010087388A (ja) * | 2008-10-02 | 2010-04-15 | Ushio Inc | 露光装置 |
| US9235134B2 (en) * | 2010-08-16 | 2016-01-12 | Micron Technology, Inc. | Lens heating compensation in photolithography |
| JP2014056139A (ja) * | 2012-09-13 | 2014-03-27 | Ricoh Co Ltd | 画像投影装置 |
Family Cites Families (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT939738B (it) * | 1970-08-12 | 1973-02-10 | Rank Organisation Ltd | Dispositivo di illuminazione per la stampa fotolitografica dei componenti di microcircuiti |
| US3887816A (en) * | 1973-04-26 | 1975-06-03 | Litton Medical Products | Optical system for x-ray scanning equipment |
| DE2835363A1 (de) * | 1978-08-11 | 1980-03-13 | Siemens Ag | Verfahren zum uebertragen von strukturen fuer halbleiterschaltungen |
| JPS5681813A (en) * | 1979-12-08 | 1981-07-04 | Nippon Telegr & Teleph Corp <Ntt> | Mask lighting optical system |
| JPS5825638A (ja) * | 1981-08-08 | 1983-02-15 | Canon Inc | 露光装置 |
| US4498742A (en) * | 1981-09-10 | 1985-02-12 | Nippon Kogaku K.K. | Illumination optical arrangement |
| JPS5843416A (ja) * | 1981-09-10 | 1983-03-14 | Nippon Kogaku Kk <Nikon> | ミラ−集光型逆エキスパンドアフオ−カル照明光学系 |
| JPS58160914A (ja) * | 1982-03-18 | 1983-09-24 | Nippon Kogaku Kk <Nikon> | ミラ−集光型照明光学系 |
| JPS58147708A (ja) * | 1982-02-26 | 1983-09-02 | Nippon Kogaku Kk <Nikon> | 照明用光学装置 |
| JPS59100805A (ja) * | 1982-12-01 | 1984-06-11 | Canon Inc | 物体観察装置 |
| JPS59141226A (ja) * | 1983-02-02 | 1984-08-13 | Canon Inc | 観察装置 |
| JPS59143146A (ja) * | 1983-02-07 | 1984-08-16 | Nippon Kogaku Kk <Nikon> | ミラ−集光型照明光学系 |
| US5091744A (en) * | 1984-02-13 | 1992-02-25 | Canon Kabushiki Kaisha | Illumination optical system |
| US4619508A (en) * | 1984-04-28 | 1986-10-28 | Nippon Kogaku K. K. | Illumination optical arrangement |
| JPH0682598B2 (ja) * | 1984-10-11 | 1994-10-19 | 日本電信電話株式会社 | 投影露光装置 |
| FR2572515B1 (fr) * | 1984-10-25 | 1993-06-18 | Canon Kk | Dispositif de detection de position |
| JPH0782981B2 (ja) * | 1986-02-07 | 1995-09-06 | 株式会社ニコン | 投影露光方法及び装置 |
| US4939630A (en) * | 1986-09-09 | 1990-07-03 | Nikon Corporation | Illumination optical apparatus |
| DE3750174T2 (de) * | 1986-10-30 | 1994-11-17 | Canon Kk | Belichtungseinrichtung. |
| JPH0786647B2 (ja) * | 1986-12-24 | 1995-09-20 | 株式会社ニコン | 照明装置 |
| US4902899A (en) * | 1987-06-01 | 1990-02-20 | International Business Machines Corporation | Lithographic process having improved image quality |
| JPS6461716A (en) * | 1987-08-31 | 1989-03-08 | Canon Kk | Illuminator |
| DE68924303T2 (de) * | 1988-06-14 | 1996-02-29 | Nec Corp | Optische Kopfanordnung. |
| JP2699433B2 (ja) * | 1988-08-12 | 1998-01-19 | 株式会社ニコン | 投影型露光装置及び投影露光方法 |
| US4924257A (en) * | 1988-10-05 | 1990-05-08 | Kantilal Jain | Scan and repeat high resolution projection lithography system |
| JPH0812843B2 (ja) * | 1989-03-15 | 1996-02-07 | 日本精工株式会社 | 光学結像装置及び方法 |
| US5153773A (en) * | 1989-06-08 | 1992-10-06 | Canon Kabushiki Kaisha | Illumination device including amplitude-division and beam movements |
| EP0730200A3 (de) * | 1990-01-12 | 1997-01-22 | Sony Corp | Phasenverschiebungsmaske und Verfahren zur Herstellung |
| US5144362A (en) * | 1990-11-14 | 1992-09-01 | Mitsubishi Denki Kabushiki Kaisha | Projection aligner |
| JP3360686B2 (ja) * | 1990-12-27 | 2002-12-24 | 株式会社ニコン | 照明光学装置および投影露光装置並びに露光方法および素子製造方法 |
| US5305054A (en) * | 1991-02-22 | 1994-04-19 | Canon Kabushiki Kaisha | Imaging method for manufacture of microdevices |
| JP2673915B2 (ja) * | 1991-05-24 | 1997-11-05 | 日本電信電話株式会社 | 微細パタン投影露光装置 |
| JPH0541342A (ja) * | 1991-08-05 | 1993-02-19 | Nippon Telegr & Teleph Corp <Ntt> | 微細パタン投影露光装置 |
| JPH04369209A (ja) * | 1991-06-17 | 1992-12-22 | Nikon Corp | 露光用照明装置 |
| JP3230264B2 (ja) * | 1992-02-03 | 2001-11-19 | 株式会社ニコン | 投影露光装置及び方法、並びに素子製造方法 |
| JP3243818B2 (ja) * | 1992-02-14 | 2002-01-07 | 株式会社ニコン | 投影露光装置及び方法、並びに素子製造方法 |
| JP2803934B2 (ja) * | 1991-12-10 | 1998-09-24 | 三菱電機株式会社 | 投影露光装置及び露光方法 |
| JP2677731B2 (ja) * | 1991-12-17 | 1997-11-17 | 三菱電機株式会社 | 投影露光装置 |
| JP3075381B2 (ja) * | 1992-02-17 | 2000-08-14 | 株式会社ニコン | 投影露光装置及び転写方法 |
| US5309198A (en) * | 1992-02-25 | 1994-05-03 | Nikon Corporation | Light exposure system |
| JP3295956B2 (ja) * | 1992-03-05 | 2002-06-24 | 株式会社ニコン | 露光装置及び半導体素子の製造方法 |
| JP3278896B2 (ja) * | 1992-03-31 | 2002-04-30 | キヤノン株式会社 | 照明装置及びそれを用いた投影露光装置 |
| US5333035A (en) * | 1992-05-15 | 1994-07-26 | Nikon Corporation | Exposing method |
-
1992
- 1992-03-31 JP JP10863292A patent/JP3278896B2/ja not_active Expired - Fee Related
-
1993
- 1993-03-31 DE DE69326630T patent/DE69326630T2/de not_active Expired - Lifetime
- 1993-03-31 US US08/040,991 patent/US5345292A/en not_active Expired - Lifetime
- 1993-03-31 EP EP93302508A patent/EP0564264B1/de not_active Expired - Lifetime
- 1993-03-31 AT AT93302508T patent/ATE185429T1/de not_active IP Right Cessation
-
1995
- 1995-06-05 US US08/461,751 patent/US5726740A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69326630D1 (de) | 1999-11-11 |
| JP3278896B2 (ja) | 2002-04-30 |
| ATE185429T1 (de) | 1999-10-15 |
| EP0564264B1 (de) | 1999-10-06 |
| JPH05283317A (ja) | 1993-10-29 |
| EP0564264A1 (de) | 1993-10-06 |
| US5726740A (en) | 1998-03-10 |
| US5345292A (en) | 1994-09-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |