DE69305955D1 - Beschleunigungssensor und seine herstellung - Google Patents
Beschleunigungssensor und seine herstellungInfo
- Publication number
- DE69305955D1 DE69305955D1 DE69305955T DE69305955T DE69305955D1 DE 69305955 D1 DE69305955 D1 DE 69305955D1 DE 69305955 T DE69305955 T DE 69305955T DE 69305955 T DE69305955 T DE 69305955T DE 69305955 D1 DE69305955 D1 DE 69305955D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- acceleration sensor
- acceleration
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
- G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
- G01P2015/0817—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for pivoting movement of the mass, e.g. in-plane pendulum
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10802092A JP3367113B2 (ja) | 1992-04-27 | 1992-04-27 | 加速度センサ |
PCT/JP1993/000535 WO1993022690A1 (en) | 1992-04-27 | 1993-04-23 | Acceleration sensor and its manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69305955D1 true DE69305955D1 (de) | 1996-12-19 |
DE69305955T2 DE69305955T2 (de) | 1997-06-12 |
Family
ID=14473945
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69305955T Expired - Lifetime DE69305955T2 (de) | 1992-04-27 | 1993-04-23 | Beschleunigungssensor und seine herstellung |
Country Status (5)
Country | Link |
---|---|
US (9) | US6227049B1 (de) |
EP (1) | EP0591554B1 (de) |
JP (1) | JP3367113B2 (de) |
DE (1) | DE69305955T2 (de) |
WO (1) | WO1993022690A1 (de) |
Families Citing this family (67)
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US5461916A (en) | 1992-08-21 | 1995-10-31 | Nippondenso Co., Ltd. | Mechanical force sensing semiconductor device |
DE4332057A1 (de) * | 1993-09-21 | 1995-03-30 | Siemens Ag | Integrierte mikromechanische Sensorvorrichtung und Verfahren zu deren Herstellung |
DE4332843C2 (de) * | 1993-09-27 | 1997-04-24 | Siemens Ag | Verfahren zur Herstellung einer mikromechanischen Vorrichtung und mikromechanische Vorrichtung |
US5654031A (en) * | 1994-09-06 | 1997-08-05 | Minnesota Mining And Manufacturing Company | Web coating apparatus |
DE4439238A1 (de) * | 1994-11-03 | 1996-05-09 | Telefunken Microelectron | Kapazitiver Beschleunigungssensor |
GB2295894A (en) * | 1994-12-07 | 1996-06-12 | Viper Security Ltd | Shock sensor |
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JP3430771B2 (ja) * | 1996-02-05 | 2003-07-28 | 株式会社デンソー | 半導体力学量センサの製造方法 |
JP3198922B2 (ja) | 1996-07-03 | 2001-08-13 | 株式会社村田製作所 | 静電容量型センサの製造方法 |
DE19630553A1 (de) * | 1996-07-18 | 1998-01-29 | Reiner Ruehle | Beschleunigungsabhängige Ansteuerung für einen Elektromotor |
DE69626972T2 (de) * | 1996-07-31 | 2004-01-08 | Stmicroelectronics S.R.L., Agrate Brianza | Integrierter kapazitiver Halbleiter-Beschleunigungsmessaufnehmer sowie Verfahren zu seiner Herstellung |
DE69729753T2 (de) | 1996-10-07 | 2005-08-04 | Lucas Novasensor Inc., Fremont | 5 Mikrometer tiefer spitzer Kanalhohlraum durch oxidierendes Fusion Bonding von Silizium Substraten und Stop Ätzung |
KR20000057143A (ko) * | 1996-11-22 | 2000-09-15 | 칼 하인쯔 호르닝어 | 마이크로 공학적 기능 엘리먼트의 제조 방법 |
US6048774A (en) * | 1997-06-26 | 2000-04-11 | Denso Corporation | Method of manufacturing dynamic amount semiconductor sensor |
DE19732250A1 (de) * | 1997-07-26 | 1999-01-28 | Bosch Gmbh Robert | Verfahren zur Herstellung metallischer Mikrostrukturen |
JP3846094B2 (ja) | 1998-03-17 | 2006-11-15 | 株式会社デンソー | 半導体装置の製造方法 |
GB9819821D0 (en) | 1998-09-12 | 1998-11-04 | Secr Defence | Improvements relating to micro-machining |
DE69831075D1 (de) * | 1998-10-21 | 2005-09-08 | St Microelectronics Srl | Herstellungsverfahren von integrierten Vorrichtungen, die Mikrostrukturen mit elektrischen schwebenden Zwischenverbindungen enthalten |
JP2000206142A (ja) * | 1998-11-13 | 2000-07-28 | Denso Corp | 半導体力学量センサおよびその製造方法 |
US6417098B1 (en) * | 1999-12-09 | 2002-07-09 | Intel Corporation | Enhanced surface modification of low K carbon-doped oxide |
US7381630B2 (en) * | 2001-01-02 | 2008-06-03 | The Charles Stark Draper Laboratory, Inc. | Method for integrating MEMS device and interposer |
CA2433738C (en) * | 2001-01-02 | 2012-07-24 | The Charles Stark Draper Laboratory, Inc. | Method for microfabricating structures using silicon-on-insulator material |
US6946314B2 (en) | 2001-01-02 | 2005-09-20 | The Charles Stark Draper Laboratory, Inc. | Method for microfabricating structures using silicon-on-insulator material |
JP2002228680A (ja) | 2001-02-02 | 2002-08-14 | Denso Corp | 容量式力学量センサ |
US6461888B1 (en) | 2001-06-14 | 2002-10-08 | Institute Of Microelectronics | Lateral polysilicon beam process |
WO2004068591A1 (ja) * | 2003-01-29 | 2004-08-12 | Mitsubishi Denki Kabushiki Kaisha | 半導体装置の製造方法及び加速度センサ |
JP2004271464A (ja) | 2003-03-12 | 2004-09-30 | Denso Corp | 半導体力学量センサ |
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US7068125B2 (en) | 2004-03-04 | 2006-06-27 | Robert Bosch Gmbh | Temperature controlled MEMS resonator and method for controlling resonator frequency |
US7102467B2 (en) * | 2004-04-28 | 2006-09-05 | Robert Bosch Gmbh | Method for adjusting the frequency of a MEMS resonator |
JP4386002B2 (ja) * | 2004-07-06 | 2009-12-16 | 株式会社デンソー | 半導体力学量センサの製造方法 |
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US7311009B2 (en) * | 2004-11-17 | 2007-12-25 | Lawrence Livermore National Security, Llc | Microelectromechanical systems contact stress sensor |
US8109149B2 (en) | 2004-11-17 | 2012-02-07 | Lawrence Livermore National Security, Llc | Contact stress sensor |
JP4633574B2 (ja) * | 2005-08-08 | 2011-02-16 | 三菱電機株式会社 | 薄膜構造体およびその製造方法 |
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CN100422071C (zh) * | 2005-10-27 | 2008-10-01 | 中国科学院上海微系统与信息技术研究所 | 微机械加速度计器件的圆片级封装工艺 |
US20070170528A1 (en) | 2006-01-20 | 2007-07-26 | Aaron Partridge | Wafer encapsulated microelectromechanical structure and method of manufacturing same |
JP5092462B2 (ja) * | 2006-06-13 | 2012-12-05 | 株式会社デンソー | 力学量センサ |
FR2905457B1 (fr) * | 2006-09-01 | 2008-10-17 | Commissariat Energie Atomique | Microsysteme, plus particulierement microgyrometre, avec element de detection a electrodes capacitives. |
JP4645656B2 (ja) * | 2008-02-07 | 2011-03-09 | 株式会社デンソー | 半導体力学量センサ |
JP4783914B2 (ja) * | 2008-03-21 | 2011-09-28 | 株式会社デンソー | 半導体力学量センサおよび半導体力学量センサの製造方法 |
JP4783915B2 (ja) * | 2008-06-04 | 2011-09-28 | 株式会社デンソー | 半導体力学量センサ |
FR2932789B1 (fr) * | 2008-06-23 | 2011-04-15 | Commissariat Energie Atomique | Procede de fabrication d'une structure electromecanique comportant au moins un pilier de renfort mecanique. |
US7943525B2 (en) * | 2008-12-19 | 2011-05-17 | Freescale Semiconductor, Inc. | Method of producing microelectromechanical device with isolated microstructures |
DE102009006822B4 (de) * | 2009-01-29 | 2011-09-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Mikrostruktur, Verfahren zu deren Herstellung, Vorrichtung zum Bonden einer Mikrostruktur und Mikrosystem |
JP5260342B2 (ja) * | 2009-01-30 | 2013-08-14 | ローム株式会社 | Memsセンサ |
JP5592087B2 (ja) * | 2009-08-06 | 2014-09-17 | ローム株式会社 | 半導体装置及び半導体装置の製造方法 |
US8946786B2 (en) | 2010-07-01 | 2015-02-03 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing same |
JP2012045697A (ja) * | 2010-08-30 | 2012-03-08 | Toyota Motor Corp | 半導体装置の製造方法 |
JP5750867B2 (ja) | 2010-11-04 | 2015-07-22 | セイコーエプソン株式会社 | 機能素子、機能素子の製造方法、物理量センサーおよび電子機器 |
JP5790297B2 (ja) | 2011-08-17 | 2015-10-07 | セイコーエプソン株式会社 | 物理量センサー及び電子機器 |
US8991251B1 (en) | 2011-11-21 | 2015-03-31 | Western Digital (Fremont), Llc | Hybrid capacitive and piezoelectric motion sensing transducer |
JP5983912B2 (ja) | 2012-02-09 | 2016-09-06 | セイコーエプソン株式会社 | 電子デバイスおよびその製造方法、並びに電子機器 |
JP5999302B2 (ja) | 2012-02-09 | 2016-09-28 | セイコーエプソン株式会社 | 電子デバイスおよびその製造方法、並びに電子機器 |
JP6056177B2 (ja) | 2012-04-11 | 2017-01-11 | セイコーエプソン株式会社 | ジャイロセンサー、電子機器 |
JP2014021037A (ja) | 2012-07-23 | 2014-02-03 | Seiko Epson Corp | Memsデバイス、電子モジュール、電子機器、及び移動体 |
US10703627B2 (en) * | 2013-06-27 | 2020-07-07 | Soitec | Methods of fabricating semiconductor structures including cavities filled with a sacrificial material |
JP6206651B2 (ja) | 2013-07-17 | 2017-10-04 | セイコーエプソン株式会社 | 機能素子、電子機器、および移動体 |
JP2016042074A (ja) | 2014-08-13 | 2016-03-31 | セイコーエプソン株式会社 | 物理量センサー、電子機器および移動体 |
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US5511420A (en) * | 1994-12-01 | 1996-04-30 | Analog Devices, Inc. | Electric field attraction minimization circuit |
US5922212A (en) * | 1995-06-08 | 1999-07-13 | Nippondenso Co., Ltd | Semiconductor sensor having suspended thin-film structure and method for fabricating thin-film structure body |
JP3555388B2 (ja) * | 1997-06-30 | 2004-08-18 | 株式会社デンソー | 半導体ヨーレートセンサ |
-
1992
- 1992-04-27 JP JP10802092A patent/JP3367113B2/ja not_active Expired - Lifetime
-
1993
- 1993-04-23 WO PCT/JP1993/000535 patent/WO1993022690A1/ja active IP Right Grant
- 1993-04-23 EP EP93909418A patent/EP0591554B1/de not_active Expired - Lifetime
- 1993-04-23 DE DE69305955T patent/DE69305955T2/de not_active Expired - Lifetime
-
1995
- 1995-12-04 US US08/566,600 patent/US6227049B1/en not_active Ceased
-
1999
- 1999-12-09 US US09/457,350 patent/US6244112B1/en not_active Expired - Lifetime
- 1999-12-09 US US09/457,349 patent/US6171881B1/en not_active Expired - Lifetime
-
2001
- 2001-06-19 US US09/883,203 patent/US20010032509A1/en not_active Abandoned
-
2002
- 2002-04-17 US US10/123,220 patent/USRE40347E1/en not_active Expired - Lifetime
- 2002-12-10 US US10/315,859 patent/USRE41213E1/en not_active Expired - Lifetime
- 2002-12-10 US US10/315,566 patent/USRE41047E1/en not_active Expired - Lifetime
- 2002-12-10 US US10/315,861 patent/USRE40561E1/en not_active Expired - Lifetime
- 2002-12-10 US US10/315,827 patent/USRE42083E1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20010032509A1 (en) | 2001-10-25 |
USRE41213E1 (en) | 2010-04-13 |
USRE40347E1 (en) | 2008-06-03 |
EP0591554A1 (de) | 1994-04-13 |
JP3367113B2 (ja) | 2003-01-14 |
EP0591554A4 (en) | 1994-10-05 |
USRE41047E1 (en) | 2009-12-22 |
USRE42083E1 (en) | 2011-02-01 |
DE69305955T2 (de) | 1997-06-12 |
EP0591554B1 (de) | 1996-11-13 |
USRE40561E1 (en) | 2008-11-04 |
US6227049B1 (en) | 2001-05-08 |
WO1993022690A1 (en) | 1993-11-11 |
US6171881B1 (en) | 2001-01-09 |
JPH05304303A (ja) | 1993-11-16 |
US6244112B1 (en) | 2001-06-12 |
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