DE69219230D1 - Hochauflösender Flüssigkristallbildschirm mit aktiver Matrix - Google Patents

Hochauflösender Flüssigkristallbildschirm mit aktiver Matrix

Info

Publication number
DE69219230D1
DE69219230D1 DE69219230T DE69219230T DE69219230D1 DE 69219230 D1 DE69219230 D1 DE 69219230D1 DE 69219230 T DE69219230 T DE 69219230T DE 69219230 T DE69219230 T DE 69219230T DE 69219230 D1 DE69219230 D1 DE 69219230D1
Authority
DE
Germany
Prior art keywords
liquid crystal
active matrix
crystal screen
resolution liquid
resolution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69219230T
Other languages
English (en)
Other versions
DE69219230T2 (de
Inventor
Francois Morin
Yannick Chouan
Bruno Vinouze
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orange SA
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Application granted granted Critical
Publication of DE69219230D1 publication Critical patent/DE69219230D1/de
Publication of DE69219230T2 publication Critical patent/DE69219230T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
DE69219230T 1991-07-11 1992-07-09 Hochauflösender Flüssigkristallbildschirm mit aktiver Matrix Expired - Fee Related DE69219230T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9108752A FR2679057B1 (fr) 1991-07-11 1991-07-11 Structure d'ecran a cristal liquide, a matrice active et a haute definition.

Publications (2)

Publication Number Publication Date
DE69219230D1 true DE69219230D1 (de) 1997-05-28
DE69219230T2 DE69219230T2 (de) 1997-10-16

Family

ID=9414994

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69219230T Expired - Fee Related DE69219230T2 (de) 1991-07-11 1992-07-09 Hochauflösender Flüssigkristallbildschirm mit aktiver Matrix

Country Status (5)

Country Link
US (1) US5299041A (de)
EP (1) EP0524067B1 (de)
JP (1) JP2799441B2 (de)
DE (1) DE69219230T2 (de)
FR (1) FR2679057B1 (de)

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JPH06194687A (ja) * 1992-10-30 1994-07-15 Nec Corp 透過型アクティブマトリクス型液晶素子
FR2693005B1 (fr) * 1992-06-26 1995-03-31 Thomson Lcd Disposition d'encapsulation et de passivation de circuit pour écrans plats.
JPH06167705A (ja) * 1992-11-30 1994-06-14 Sanyo Electric Co Ltd 単板式液晶プロジェクター
US7297471B1 (en) 2003-04-15 2007-11-20 Idc, Llc Method for manufacturing an array of interferometric modulators
US7550794B2 (en) * 2002-09-20 2009-06-23 Idc, Llc Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer
FR2721428B1 (fr) * 1994-06-17 1996-09-13 France Telecom Ecran d'affichage à matrice active à commande multiplexée.
US6061110A (en) * 1994-10-18 2000-05-09 Kabushiki Kaisha Toshiba Reflection type liquid crystal display device and method of manufacturing the same
FR2733342B1 (fr) * 1995-04-20 1997-05-23 France Telecom Procede de fabrication d'une plaque d'un ecran d'affichage a cristaux liquides et a matrice active, et plaque obtenue par ce procede
US5936694A (en) * 1995-04-26 1999-08-10 Canon Kabushiki Kaisha Liquid crystal device and process for producing same
JP3242304B2 (ja) * 1995-10-03 2001-12-25 シャープ株式会社 マトリクス型表示装置
JP3149793B2 (ja) * 1996-07-22 2001-03-26 日本電気株式会社 反射型液晶表示装置及びその製造方法
JP2798066B2 (ja) * 1996-08-05 1998-09-17 日本電気株式会社 薄膜トランジスター、その製造方法および表示装置
JPH11142863A (ja) 1997-11-13 1999-05-28 Nec Corp 液晶表示パネルおよびその製造方法
US6211934B1 (en) 1997-12-24 2001-04-03 Honeywell Inc. Method of and apparatuses for reducing infrared loading on display devices
KR100313949B1 (ko) * 1998-11-11 2002-09-17 엘지.필립스 엘시디 주식회사 멀티도메인액정표시소자
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JP3911929B2 (ja) * 1999-10-25 2007-05-09 セイコーエプソン株式会社 液晶表示装置の製造方法
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KR100820104B1 (ko) * 2001-07-25 2008-04-07 엘지.필립스 엘시디 주식회사 액정 표시 장치 및 그의 제조 방법
US6794119B2 (en) * 2002-02-12 2004-09-21 Iridigm Display Corporation Method for fabricating a structure for a microelectromechanical systems (MEMS) device
US7781850B2 (en) * 2002-09-20 2010-08-24 Qualcomm Mems Technologies, Inc. Controlling electromechanical behavior of structures within a microelectromechanical systems device
KR20040089286A (ko) * 2003-04-11 2004-10-21 삼성전자주식회사 액정표시장치
TW594360B (en) * 2003-04-21 2004-06-21 Prime View Int Corp Ltd A method for fabricating an interference display cell
TW570896B (en) 2003-05-26 2004-01-11 Prime View Int Co Ltd A method for fabricating an interference display cell
US7221495B2 (en) 2003-06-24 2007-05-22 Idc Llc Thin film precursor stack for MEMS manufacturing
TWI231865B (en) * 2003-08-26 2005-05-01 Prime View Int Co Ltd An interference display cell and fabrication method thereof
TWI232333B (en) * 2003-09-03 2005-05-11 Prime View Int Co Ltd Display unit using interferometric modulation and manufacturing method thereof
TW593126B (en) 2003-09-30 2004-06-21 Prime View Int Co Ltd A structure of a micro electro mechanical system and manufacturing the same
KR20050041010A (ko) * 2003-10-29 2005-05-04 삼성전자주식회사 박막 다이오드 표시판 및 그 제조 방법
US7720148B2 (en) * 2004-03-26 2010-05-18 The Hong Kong University Of Science And Technology Efficient multi-frame motion estimation for video compression
US7420728B2 (en) * 2004-09-27 2008-09-02 Idc, Llc Methods of fabricating interferometric modulators by selectively removing a material
US7553684B2 (en) * 2004-09-27 2009-06-30 Idc, Llc Method of fabricating interferometric devices using lift-off processing techniques
US7161730B2 (en) 2004-09-27 2007-01-09 Idc, Llc System and method for providing thermal compensation for an interferometric modulator display
US7349136B2 (en) * 2004-09-27 2008-03-25 Idc, Llc Method and device for a display having transparent components integrated therein
US20060065366A1 (en) * 2004-09-27 2006-03-30 Cummings William J Portable etch chamber
US20060065622A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and system for xenon fluoride etching with enhanced efficiency
US7492502B2 (en) * 2004-09-27 2009-02-17 Idc, Llc Method of fabricating a free-standing microstructure
US7369296B2 (en) * 2004-09-27 2008-05-06 Idc, Llc Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator
US20060067650A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of making a reflective display device using thin film transistor production techniques
US7684104B2 (en) * 2004-09-27 2010-03-23 Idc, Llc MEMS using filler material and method
US7405861B2 (en) * 2004-09-27 2008-07-29 Idc, Llc Method and device for protecting interferometric modulators from electrostatic discharge
US7373026B2 (en) * 2004-09-27 2008-05-13 Idc, Llc MEMS device fabricated on a pre-patterned substrate
US7417783B2 (en) * 2004-09-27 2008-08-26 Idc, Llc Mirror and mirror layer for optical modulator and method
KR101090250B1 (ko) * 2004-10-15 2011-12-06 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
TW200628877A (en) * 2005-02-04 2006-08-16 Prime View Int Co Ltd Method of manufacturing optical interference type color display
KR101133767B1 (ko) * 2005-03-09 2012-04-09 삼성전자주식회사 유기 박막 트랜지스터 표시판 및 그 제조 방법
JP2009503564A (ja) * 2005-07-22 2009-01-29 クアルコム，インコーポレイテッド Ｍｅｍｓデバイスのための支持構造、およびその方法
US7630114B2 (en) * 2005-10-28 2009-12-08 Idc, Llc Diffusion barrier layer for MEMS devices
US7795061B2 (en) 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7382515B2 (en) * 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7547568B2 (en) * 2006-02-22 2009-06-16 Qualcomm Mems Technologies, Inc. Electrical conditioning of MEMS device and insulating layer thereof
US7450295B2 (en) * 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
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US20070249078A1 (en) * 2006-04-19 2007-10-25 Ming-Hau Tung Non-planar surface structures and process for microelectromechanical systems
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JP5250944B2 (ja) * 2006-04-28 2013-07-31 凸版印刷株式会社 構造体、透過型液晶表示装置、半導体回路の製造方法および透過型液晶表示装置の製造方法
JP2007298602A (ja) * 2006-04-28 2007-11-15 Toppan Printing Co Ltd 構造体、透過型液晶表示装置、半導体回路の製造方法および透過型液晶表示装置の製造方法
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KR101549963B1 (ko) * 2008-11-28 2015-09-04 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101541794B1 (ko) 2008-12-09 2015-08-04 삼성디스플레이 주식회사 액정 표시 장치
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CN102654665B (zh) * 2011-12-14 2014-02-26 京东方科技集团股份有限公司 液晶透镜型调光装置及显示器
DE112013007566B3 (de) 2012-08-03 2018-02-22 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
DE102013216824A1 (de) 2012-08-28 2014-03-06 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
TWI575663B (zh) 2012-08-31 2017-03-21 半導體能源研究所股份有限公司 半導體裝置
CN111477634B (zh) 2012-09-13 2023-11-14 株式会社半导体能源研究所 半导体装置
KR20220145922A (ko) 2012-12-25 2022-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9905585B2 (en) 2012-12-25 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising capacitor
US9231002B2 (en) 2013-05-03 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
TWI679772B (zh) 2013-05-16 2019-12-11 日商半導體能源研究所股份有限公司 半導體裝置
TWI511200B (zh) * 2013-07-25 2015-12-01 Ye Xin Technology Consulting Co Ltd 顯示面板製作方法
CN103943660B (zh) 2014-04-02 2017-10-27 上海中航光电子有限公司 一种显示装置

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JPS5910988A (ja) * 1982-07-12 1984-01-20 ホシデン株式会社 カラ−液晶表示器
JPS5987491A (ja) * 1982-11-11 1984-05-21 セイコーインスツルメンツ株式会社 マトリクス・カラ−液晶表示装置
JPS6045219A (ja) * 1983-08-23 1985-03-11 Toshiba Corp アクテイブマトリクス型表示装置
JPS60207116A (ja) * 1984-03-31 1985-10-18 Toshiba Corp 表示電極アレイ
JPS60247603A (ja) * 1984-05-24 1985-12-07 Toppan Printing Co Ltd カラ−フイルタ−
JPS61138285A (ja) * 1984-12-10 1986-06-25 ホシデン株式会社 液晶表示素子
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JP2508503B2 (ja) * 1985-09-28 1996-06-19 ソニー株式会社 光電変換装置
JPS6280626A (ja) * 1985-10-04 1987-04-14 Hosiden Electronics Co Ltd 液晶表示素子
JPS62105123A (ja) * 1985-10-31 1987-05-15 Nec Corp アクテイブマトリクス液晶カラ−表示パネル
DE3786152T2 (de) * 1986-12-08 1993-09-23 Sharp Kk Fluessigkristallanzeigevorrichtung.
FR2638880B1 (fr) * 1988-11-08 1990-12-14 France Etat Procede de fabrication d'un ecran d'affichage a matrice de transistors pourvus d'un masque optique
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JPH03116853A (ja) * 1989-09-29 1991-05-17 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JPH05210119A (ja) 1993-08-20
JP2799441B2 (ja) 1998-09-17
FR2679057B1 (fr) 1995-10-20
DE69219230T2 (de) 1997-10-16
FR2679057A1 (fr) 1993-01-15
US5299041A (en) 1994-03-29
EP0524067B1 (de) 1997-04-23
EP0524067A1 (de) 1993-01-20

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Legal Events

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8339 Ceased/non-payment of the annual fee