DE69130909T2 - Plasmabehandlungsverfahren eines Resists unter Verwendung von Wasserstoffgas - Google Patents

Plasmabehandlungsverfahren eines Resists unter Verwendung von Wasserstoffgas

Info

Publication number
DE69130909T2
DE69130909T2 DE69130909T DE69130909T DE69130909T2 DE 69130909 T2 DE69130909 T2 DE 69130909T2 DE 69130909 T DE69130909 T DE 69130909T DE 69130909 T DE69130909 T DE 69130909T DE 69130909 T2 DE69130909 T2 DE 69130909T2
Authority
DE
Germany
Prior art keywords
resist
hydrogen gas
treatment method
plasma treatment
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69130909T
Other languages
English (en)
Other versions
DE69130909D1 (de
Inventor
Shuzo Fujimura
Tatsuya Takeuchi
Yoshimasa Nakano
Takeshi Miyanaga
Yuuji Matoba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69130909D1 publication Critical patent/DE69130909D1/de
Publication of DE69130909T2 publication Critical patent/DE69130909T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02085—Cleaning of diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
DE69130909T 1990-06-26 1991-06-26 Plasmabehandlungsverfahren eines Resists unter Verwendung von Wasserstoffgas Expired - Fee Related DE69130909T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16890590 1990-06-26

Publications (2)

Publication Number Publication Date
DE69130909D1 DE69130909D1 (de) 1999-04-01
DE69130909T2 true DE69130909T2 (de) 1999-06-24

Family

ID=15876738

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69130909T Expired - Fee Related DE69130909T2 (de) 1990-06-26 1991-06-26 Plasmabehandlungsverfahren eines Resists unter Verwendung von Wasserstoffgas

Country Status (4)

Country Link
US (1) US5403436A (de)
EP (1) EP0463870B1 (de)
KR (1) KR940005287B1 (de)
DE (1) DE69130909T2 (de)

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JPH07243064A (ja) * 1994-01-03 1995-09-19 Xerox Corp 基板清掃方法
US5900351A (en) * 1995-01-17 1999-05-04 International Business Machines Corporation Method for stripping photoresist
US5908565A (en) * 1995-02-03 1999-06-01 Sharp Kabushiki Kaisha Line plasma vapor phase deposition apparatus and method
US5958799A (en) * 1995-04-13 1999-09-28 North Carolina State University Method for water vapor enhanced charged-particle-beam machining
US5651860A (en) * 1996-03-06 1997-07-29 Micron Technology, Inc. Ion-implanted resist removal method
JPH09270421A (ja) * 1996-04-01 1997-10-14 Mitsubishi Electric Corp 表面処理装置および表面処理方法
US6010949A (en) * 1996-10-21 2000-01-04 Micron Technology, Inc. Method for removing silicon nitride in the fabrication of semiconductor devices
US6149828A (en) 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
WO1999026277A1 (en) * 1997-11-17 1999-05-27 Mattson Technology, Inc. Systems and methods for plasma enhanced processing of semiconductor wafers
US6413874B1 (en) 1997-12-26 2002-07-02 Canon Kabushiki Kaisha Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same
US6291868B1 (en) 1998-02-26 2001-09-18 Micron Technology, Inc. Forming a conductive structure in a semiconductor device
US6149829A (en) 1998-03-17 2000-11-21 James W. Mitzel Plasma surface treatment method and resulting device
US7014788B1 (en) 1998-06-10 2006-03-21 Jim Mitzel Surface treatment method and equipment
JP2000021870A (ja) * 1998-06-30 2000-01-21 Tokyo Electron Ltd プラズマ処理装置
US6242165B1 (en) 1998-08-28 2001-06-05 Micron Technology, Inc. Supercritical compositions for removal of organic material and methods of using same
US6291361B1 (en) 1999-03-24 2001-09-18 Conexant Systems, Inc. Method and apparatus for high-resolution in-situ plasma etching of inorganic and metal films
US6414307B1 (en) 1999-07-09 2002-07-02 Fei Company Method and apparatus for enhancing yield of secondary ions
US6805139B1 (en) 1999-10-20 2004-10-19 Mattson Technology, Inc. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US20050022839A1 (en) * 1999-10-20 2005-02-03 Savas Stephen E. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US20010024769A1 (en) * 2000-02-08 2001-09-27 Kevin Donoghue Method for removing photoresist and residues from semiconductor device surfaces
KR100360399B1 (ko) 2000-03-07 2002-11-13 삼성전자 주식회사 반구형입자(ｈｓｇ)막을 구비한 반도체소자의 제조방법
US6921708B1 (en) * 2000-04-13 2005-07-26 Micron Technology, Inc. Integrated circuits having low resistivity contacts and the formation thereof using an in situ plasma doping and clean
US6440864B1 (en) 2000-06-30 2002-08-27 Applied Materials Inc. Substrate cleaning process
US7253124B2 (en) * 2000-10-20 2007-08-07 Texas Instruments Incorporated Process for defect reduction in electrochemical plating
US6692903B2 (en) 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
US7270724B2 (en) 2000-12-13 2007-09-18 Uvtech Systems, Inc. Scanning plasma reactor
US6773683B2 (en) * 2001-01-08 2004-08-10 Uvtech Systems, Inc. Photocatalytic reactor system for treating flue effluents
US6991739B2 (en) * 2001-10-15 2006-01-31 Applied Materials, Inc. Method of photoresist removal in the presence of a dielectric layer having a low k-value
US20030183245A1 (en) * 2002-04-01 2003-10-02 Min-Shyan Sheu Surface silanization
US7473377B2 (en) * 2002-06-27 2009-01-06 Tokyo Electron Limited Plasma processing method
JP2006507667A (ja) * 2002-09-18 2006-03-02 マットソン テクノロジイ インコーポレイテッド 材料を除去するためのシステムおよび方法
US7799685B2 (en) * 2003-10-13 2010-09-21 Mattson Technology, Inc. System and method for removal of photoresist in transistor fabrication for integrated circuit manufacturing
WO2005072211A2 (en) * 2004-01-20 2005-08-11 Mattson Technology, Inc. System and method for removal of photoresist and residues following contact etch with a stop layer present
US20110061679A1 (en) * 2004-06-17 2011-03-17 Uvtech Systems, Inc. Photoreactive Removal of Ion Implanted Resist
US20070054492A1 (en) * 2004-06-17 2007-03-08 Elliott David J Photoreactive removal of ion implanted resist
US20070186953A1 (en) * 2004-07-12 2007-08-16 Savas Stephen E Systems and Methods for Photoresist Strip and Residue Treatment in Integrated Circuit Manufacturing
US7981307B2 (en) * 2007-10-02 2011-07-19 Lam Research Corporation Method and apparatus for shaping gas profile near bevel edge
US8664729B2 (en) * 2011-12-14 2014-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for reduced gate resistance finFET
US8962469B2 (en) 2012-02-16 2015-02-24 Infineon Technologies Ag Methods of stripping resist after metal deposition
US9001463B2 (en) 2012-08-31 2015-04-07 International Business Machines Corporaton Magnetic recording head having protected reader sensors and near zero recessed write poles
US9349395B2 (en) 2012-08-31 2016-05-24 International Business Machines Corporation System and method for differential etching
CN107924833B (zh) * 2015-08-17 2021-11-09 株式会社爱发科 基板处理方法及基板处理装置

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Also Published As

Publication number Publication date
US5403436A (en) 1995-04-04
DE69130909D1 (de) 1999-04-01
EP0463870A1 (de) 1992-01-02
KR940005287B1 (ko) 1994-06-15
EP0463870B1 (de) 1999-02-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE

8339 Ceased/non-payment of the annual fee