DE69123727T2 - Elektrischer Kontakt für einen Leistungschip - Google Patents
Elektrischer Kontakt für einen LeistungschipInfo
- Publication number
- DE69123727T2 DE69123727T2 DE1991623727 DE69123727T DE69123727T2 DE 69123727 T2 DE69123727 T2 DE 69123727T2 DE 1991623727 DE1991623727 DE 1991623727 DE 69123727 T DE69123727 T DE 69123727T DE 69123727 T2 DE69123727 T2 DE 69123727T2
- Authority
- DE
- Germany
- Prior art keywords
- electrical contact
- power chip
- chip
- power
- electrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/603,495 US5184206A (en) | 1990-10-26 | 1990-10-26 | Direct thermocompression bonding for thin electronic power chips |
PCT/US1991/007899 WO1992008248A1 (en) | 1990-10-26 | 1991-10-24 | Direct thermocompression bonding for thin electronic power chips |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69123727D1 DE69123727D1 (de) | 1997-01-30 |
DE69123727T2 true DE69123727T2 (de) | 1997-07-03 |
Family
ID=24415689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1991623727 Expired - Fee Related DE69123727T2 (de) | 1990-10-26 | 1991-10-24 | Elektrischer Kontakt für einen Leistungschip |
Country Status (7)
Country | Link |
---|---|
US (2) | US5184206A (de) |
EP (1) | EP0513273B1 (de) |
JP (1) | JP2979086B2 (de) |
KR (1) | KR100201679B1 (de) |
CA (1) | CA2071496C (de) |
DE (1) | DE69123727T2 (de) |
WO (1) | WO1992008248A1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5184206A (en) * | 1990-10-26 | 1993-02-02 | General Electric Company | Direct thermocompression bonding for thin electronic power chips |
JP2553249B2 (ja) * | 1991-03-18 | 1996-11-13 | 株式会社東芝 | 半導体装置 |
JPH07105586B2 (ja) * | 1992-09-15 | 1995-11-13 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 半導体チップ結合構造 |
EP0662708A1 (de) * | 1994-01-06 | 1995-07-12 | Harris Corporation | Thermokompressionsschweissen mit Aluminium-Gold-Zwischenschicht |
JP3437687B2 (ja) * | 1994-12-22 | 2003-08-18 | 株式会社東芝 | 半導体素子の実装構造、及び液晶表示装置 |
US5945732A (en) * | 1997-03-12 | 1999-08-31 | Staktek Corporation | Apparatus and method of manufacturing a warp resistant thermally conductive integrated circuit package |
US6157076A (en) * | 1997-06-30 | 2000-12-05 | Intersil Corporation | Hermetic thin pack semiconductor device |
US5977639A (en) * | 1997-09-30 | 1999-11-02 | Intel Corporation | Metal staples to prevent interlayer delamination |
US6457234B1 (en) | 1999-05-14 | 2002-10-01 | International Business Machines Corporation | Process for manufacturing self-aligned corrosion stop for copper C4 and wirebond |
JP2000340911A (ja) * | 1999-05-25 | 2000-12-08 | Mitsui Mining & Smelting Co Ltd | プリント配線板用銅箔 |
US7692211B1 (en) * | 2001-07-03 | 2010-04-06 | Silicon Power Corporation | Super GTO-based power blocks |
JP4073876B2 (ja) * | 2004-01-14 | 2008-04-09 | 三菱電機株式会社 | 半導体装置 |
US8987875B2 (en) | 2013-03-08 | 2015-03-24 | Delphi Technologies, Inc. | Balanced stress assembly for semiconductor devices |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3840982A (en) * | 1966-12-28 | 1974-10-15 | Westinghouse Electric Corp | Contacts for semiconductor devices, particularly integrated circuits, and methods of making the same |
US3599060A (en) * | 1968-11-25 | 1971-08-10 | Gen Electric | A multilayer metal contact for semiconductor device |
NL7011885A (de) * | 1970-08-12 | 1972-02-15 | ||
US3848261A (en) * | 1972-06-19 | 1974-11-12 | Trw Inc | Mos integrated circuit structure |
US3781596A (en) * | 1972-07-07 | 1973-12-25 | R Galli | Semiconductor chip carriers and strips thereof |
US3922712A (en) * | 1974-05-01 | 1975-11-25 | Gen Motors Corp | Plastic power semiconductor flip chip package |
US4089733A (en) * | 1975-09-12 | 1978-05-16 | Amp Incorporated | Method of forming complex shaped metal-plastic composite lead frames for IC packaging |
JPS5421165A (en) * | 1977-07-18 | 1979-02-17 | Nec Corp | Semiconductor device |
CA1226967A (en) * | 1984-03-08 | 1987-09-15 | Sheldon H. Butt | Tape bonding material and structure for electronic circuit fabrication |
JPS6281744A (ja) * | 1985-10-07 | 1987-04-15 | Mitsui Mining & Smelting Co Ltd | バンプ付フイルムキヤリヤの製造方法 |
JPS62150753A (ja) * | 1985-12-25 | 1987-07-04 | Hitachi Ltd | 電子装置 |
JPS62150728A (ja) * | 1985-12-25 | 1987-07-04 | Hitachi Ltd | テ−プキヤリアおよびそれを用いた半導体装置 |
US4750666A (en) * | 1986-04-17 | 1988-06-14 | General Electric Company | Method of fabricating gold bumps on IC's and power chips |
JPS63119552A (ja) * | 1986-11-07 | 1988-05-24 | Sharp Corp | Lsiチツプ |
US4907734A (en) * | 1988-10-28 | 1990-03-13 | International Business Machines Corporation | Method of bonding gold or gold alloy wire to lead tin solder |
US5135890A (en) * | 1989-06-16 | 1992-08-04 | General Electric Company | Method of forming a hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chip |
US5103290A (en) * | 1989-06-16 | 1992-04-07 | General Electric Company | Hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chip |
US5018002A (en) * | 1989-07-03 | 1991-05-21 | General Electric Company | High current hermetic package including an internal foil and having a lead extending through the package lid and a packaged semiconductor chip |
US5028987A (en) * | 1989-07-03 | 1991-07-02 | General Electric Company | High current hermetic package having a lead extending through the package lid and a packaged semiconductor chip |
US5184206A (en) * | 1990-10-26 | 1993-02-02 | General Electric Company | Direct thermocompression bonding for thin electronic power chips |
-
1990
- 1990-10-26 US US07/603,495 patent/US5184206A/en not_active Expired - Fee Related
-
1991
- 1991-10-24 JP JP51838791A patent/JP2979086B2/ja not_active Expired - Fee Related
- 1991-10-24 WO PCT/US1991/007899 patent/WO1992008248A1/en active IP Right Grant
- 1991-10-24 CA CA 2071496 patent/CA2071496C/en not_active Expired - Fee Related
- 1991-10-24 EP EP19910920068 patent/EP0513273B1/de not_active Expired - Lifetime
- 1991-10-24 DE DE1991623727 patent/DE69123727T2/de not_active Expired - Fee Related
-
1992
- 1992-06-23 KR KR1019920701508A patent/KR100201679B1/ko not_active IP Right Cessation
-
1993
- 1993-01-21 US US08/007,300 patent/US5304847A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR920704353A (ko) | 1992-12-19 |
JP2979086B2 (ja) | 1999-11-15 |
EP0513273A4 (en) | 1993-04-21 |
DE69123727D1 (de) | 1997-01-30 |
US5184206A (en) | 1993-02-02 |
EP0513273B1 (de) | 1996-12-18 |
EP0513273A1 (de) | 1992-11-19 |
CA2071496A1 (en) | 1992-04-27 |
KR100201679B1 (en) | 1999-06-15 |
WO1992008248A1 (en) | 1992-05-14 |
JPH05503397A (ja) | 1993-06-03 |
CA2071496C (en) | 2002-05-14 |
US5304847A (en) | 1994-04-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |