DE69123727D1 - Elektrischer Kontakt für einen Leistungschip - Google Patents

Elektrischer Kontakt für einen Leistungschip

Info

Publication number
DE69123727D1
DE69123727D1 DE69123727T DE69123727T DE69123727D1 DE 69123727 D1 DE69123727 D1 DE 69123727D1 DE 69123727 T DE69123727 T DE 69123727T DE 69123727 T DE69123727 T DE 69123727T DE 69123727 D1 DE69123727 D1 DE 69123727D1
Authority
DE
Germany
Prior art keywords
electrical contact
power chip
chip
power
electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69123727T
Other languages
English (en)
Other versions
DE69123727T2 (de
Inventor
Constantine Neugebauer
Homer Glascock
Kyung Paik
James Mcmullen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harris Corp
Original Assignee
Harris Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harris Corp filed Critical Harris Corp
Application granted granted Critical
Publication of DE69123727D1 publication Critical patent/DE69123727D1/de
Publication of DE69123727T2 publication Critical patent/DE69123727T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4827—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
DE1991623727 1990-10-26 1991-10-24 Elektrischer Kontakt für einen Leistungschip Expired - Fee Related DE69123727T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/603,495 US5184206A (en) 1990-10-26 1990-10-26 Direct thermocompression bonding for thin electronic power chips
PCT/US1991/007899 WO1992008248A1 (en) 1990-10-26 1991-10-24 Direct thermocompression bonding for thin electronic power chips

Publications (2)

Publication Number Publication Date
DE69123727D1 true DE69123727D1 (de) 1997-01-30
DE69123727T2 DE69123727T2 (de) 1997-07-03

Family

ID=24415689

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1991623727 Expired - Fee Related DE69123727T2 (de) 1990-10-26 1991-10-24 Elektrischer Kontakt für einen Leistungschip

Country Status (7)

Country Link
US (2) US5184206A (de)
EP (1) EP0513273B1 (de)
JP (1) JP2979086B2 (de)
KR (1) KR100201679B1 (de)
CA (1) CA2071496C (de)
DE (1) DE69123727T2 (de)
WO (1) WO1992008248A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5184206A (en) * 1990-10-26 1993-02-02 General Electric Company Direct thermocompression bonding for thin electronic power chips
JP2553249B2 (ja) * 1991-03-18 1996-11-13 株式会社東芝 半導体装置
JPH07105586B2 (ja) * 1992-09-15 1995-11-13 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体チップ結合構造
EP0662708A1 (de) * 1994-01-06 1995-07-12 Harris Corporation Thermokompressionsschweissen mit Aluminium-Gold-Zwischenschicht
JP3437687B2 (ja) * 1994-12-22 2003-08-18 株式会社東芝 半導体素子の実装構造、及び液晶表示装置
US5945732A (en) * 1997-03-12 1999-08-31 Staktek Corporation Apparatus and method of manufacturing a warp resistant thermally conductive integrated circuit package
US6157076A (en) * 1997-06-30 2000-12-05 Intersil Corporation Hermetic thin pack semiconductor device
US5977639A (en) * 1997-09-30 1999-11-02 Intel Corporation Metal staples to prevent interlayer delamination
US6457234B1 (en) 1999-05-14 2002-10-01 International Business Machines Corporation Process for manufacturing self-aligned corrosion stop for copper C4 and wirebond
JP2000340911A (ja) * 1999-05-25 2000-12-08 Mitsui Mining & Smelting Co Ltd プリント配線板用銅箔
US7692211B1 (en) 2001-07-03 2010-04-06 Silicon Power Corporation Super GTO-based power blocks
JP4073876B2 (ja) * 2004-01-14 2008-04-09 三菱電機株式会社 半導体装置
US8987875B2 (en) 2013-03-08 2015-03-24 Delphi Technologies, Inc. Balanced stress assembly for semiconductor devices

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3840982A (en) * 1966-12-28 1974-10-15 Westinghouse Electric Corp Contacts for semiconductor devices, particularly integrated circuits, and methods of making the same
US3599060A (en) * 1968-11-25 1971-08-10 Gen Electric A multilayer metal contact for semiconductor device
NL7011885A (de) * 1970-08-12 1972-02-15
US3848261A (en) * 1972-06-19 1974-11-12 Trw Inc Mos integrated circuit structure
US3781596A (en) * 1972-07-07 1973-12-25 R Galli Semiconductor chip carriers and strips thereof
US3922712A (en) * 1974-05-01 1975-11-25 Gen Motors Corp Plastic power semiconductor flip chip package
US4089733A (en) * 1975-09-12 1978-05-16 Amp Incorporated Method of forming complex shaped metal-plastic composite lead frames for IC packaging
JPS5421165A (en) * 1977-07-18 1979-02-17 Nec Corp Semiconductor device
CA1226967A (en) * 1984-03-08 1987-09-15 Sheldon H. Butt Tape bonding material and structure for electronic circuit fabrication
JPS6281744A (ja) * 1985-10-07 1987-04-15 Mitsui Mining & Smelting Co Ltd バンプ付フイルムキヤリヤの製造方法
JPS62150728A (ja) * 1985-12-25 1987-07-04 Hitachi Ltd テ−プキヤリアおよびそれを用いた半導体装置
JPS62150753A (ja) * 1985-12-25 1987-07-04 Hitachi Ltd 電子装置
US4750666A (en) * 1986-04-17 1988-06-14 General Electric Company Method of fabricating gold bumps on IC's and power chips
JPS63119552A (ja) * 1986-11-07 1988-05-24 Sharp Corp Ｌｓｉチツプ
US4907734A (en) * 1988-10-28 1990-03-13 International Business Machines Corporation Method of bonding gold or gold alloy wire to lead tin solder
US5103290A (en) * 1989-06-16 1992-04-07 General Electric Company Hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chip
US5135890A (en) * 1989-06-16 1992-08-04 General Electric Company Method of forming a hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chip
US5028987A (en) * 1989-07-03 1991-07-02 General Electric Company High current hermetic package having a lead extending through the package lid and a packaged semiconductor chip
US5018002A (en) * 1989-07-03 1991-05-21 General Electric Company High current hermetic package including an internal foil and having a lead extending through the package lid and a packaged semiconductor chip
US5184206A (en) * 1990-10-26 1993-02-02 General Electric Company Direct thermocompression bonding for thin electronic power chips

Also Published As

Publication number Publication date
JPH05503397A (ja) 1993-06-03
WO1992008248A1 (en) 1992-05-14
DE69123727T2 (de) 1997-07-03
EP0513273A1 (de) 1992-11-19
EP0513273B1 (de) 1996-12-18
CA2071496C (en) 2002-05-14
US5184206A (en) 1993-02-02
CA2071496A1 (en) 1992-04-27
US5304847A (en) 1994-04-19
KR100201679B1 (en) 1999-06-15
JP2979086B2 (ja) 1999-11-15
KR920704353A (ko) 1992-12-19
EP0513273A4 (en) 1993-04-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee