DE69123269D1 - Überzugsschicht für mikroelektronische Anordnungen und Substrate - Google Patents

Überzugsschicht für mikroelektronische Anordnungen und Substrate

Info

Publication number
DE69123269D1
DE69123269D1 DE69123269T DE69123269T DE69123269D1 DE 69123269 D1 DE69123269 D1 DE 69123269D1 DE 69123269 T DE69123269 T DE 69123269T DE 69123269 T DE69123269 T DE 69123269T DE 69123269 D1 DE69123269 D1 DE 69123269D1
Authority
DE
Germany
Prior art keywords
substrates
coating layer
microelectronic devices
microelectronic
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69123269T
Other languages
English (en)
Other versions
DE69123269T2 (de
Inventor
Loren Andrew Haluska
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of DE69123269D1 publication Critical patent/DE69123269D1/de
Application granted granted Critical
Publication of DE69123269T2 publication Critical patent/DE69123269T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/481—Insulating layers on insulating parts, with or without metallisation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
    • C04B41/455—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction
    • C04B41/4554—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction the coating or impregnating material being an organic or organo-metallic precursor of an inorganic material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/934—Electrical process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/938—Vapor deposition or gas diffusion
DE69123269T 1990-02-15 1991-01-30 Überzugsschicht für mikroelektronische Anordnungen und Substrate Expired - Fee Related DE69123269T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/480,399 US4973526A (en) 1990-02-15 1990-02-15 Method of forming ceramic coatings and resulting articles

Publications (2)

Publication Number Publication Date
DE69123269D1 true DE69123269D1 (de) 1997-01-09
DE69123269T2 DE69123269T2 (de) 1997-06-05

Family

ID=23907816

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69123269T Expired - Fee Related DE69123269T2 (de) 1990-02-15 1991-01-30 Überzugsschicht für mikroelektronische Anordnungen und Substrate

Country Status (6)

Country Link
US (2) US4973526A (de)
EP (1) EP0442632B1 (de)
JP (1) JP2591863B2 (de)
CA (1) CA2034908A1 (de)
DE (1) DE69123269T2 (de)
ES (1) ES2096619T3 (de)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5059448A (en) * 1990-06-18 1991-10-22 Dow Corning Corporation Rapid thermal process for obtaining silica coatings
US5396052A (en) * 1990-12-14 1995-03-07 The Rubbright Group, Inc. Ceramic utensil for microwave cooking
US5380553A (en) * 1990-12-24 1995-01-10 Dow Corning Corporation Reverse direction pyrolysis processing
US5173367A (en) * 1991-01-15 1992-12-22 Ethyl Corporation Ceramic composites
US5140498A (en) * 1991-04-19 1992-08-18 Westinghouse Electric Corp. Method of producing a wound thin film capacitor
US5445894A (en) * 1991-04-22 1995-08-29 Dow Corning Corporation Ceramic coatings
US5312684A (en) * 1991-05-02 1994-05-17 Dow Corning Corporation Threshold switching device
JP3047256B2 (ja) * 1991-06-13 2000-05-29 株式会社豊田中央研究所 誘電体薄膜
CA2100277A1 (en) * 1992-07-20 1994-01-21 Loren Andrew Haluska Sealing porous electronic substrates
US5310583A (en) * 1992-11-02 1994-05-10 Dow Corning Corporation Vapor phase deposition of hydrogen silsesquioxane resin in the presence of nitrous oxide
JPH06244426A (ja) * 1993-02-04 1994-09-02 Toagosei Chem Ind Co Ltd 薄膜形成用ガラス基板の製造方法
US5387480A (en) * 1993-03-08 1995-02-07 Dow Corning Corporation High dielectric constant coatings
US5912047A (en) * 1993-03-25 1999-06-15 Dow Corning Corporation Borosilicate electronic coatings
JP3724592B2 (ja) * 1993-07-26 2005-12-07 ハイニックス セミコンダクター アメリカ インコーポレイテッド 半導体基板の平坦化方法
US5320868A (en) * 1993-09-13 1994-06-14 Dow Corning Corporation Method of forming SI-O containing coatings
JPH0789779A (ja) * 1993-09-20 1995-04-04 Hitachi Ltd 自己修復機能被覆材およびその製法
JP2739902B2 (ja) * 1993-09-30 1998-04-15 東京応化工業株式会社 酸化ケイ素系被膜形成用塗布液
US5436084A (en) * 1994-04-05 1995-07-25 Dow Corning Corporation Electronic coatings using filled borosilazanes
US5656555A (en) * 1995-02-17 1997-08-12 Texas Instruments Incorporated Modified hydrogen silsesquioxane spin-on glass
AU6973296A (en) * 1995-09-12 1997-04-01 Gelest, Inc. Beta-substituted organosilsesquioxanes and use thereof
US6770726B1 (en) 1995-09-12 2004-08-03 Gelest, Inc. β-substituted organosilsesquioxane polymers
DE69606942T2 (de) * 1995-09-25 2000-10-05 Dow Corning Verwendung von präkeramischen Polymeren als Klebstoffe für Elektronik
US6319740B1 (en) * 1995-10-27 2001-11-20 Honeywell International Inc. Multilayer protective coating for integrated circuits and multichip modules and method of applying same
EP0771023A3 (de) * 1995-10-27 1999-03-24 Honeywell Inc. Verfahren zum Aufbringen einer Schutzschicht auf einer integrierten Halbleiteranordnung
TW328971B (en) 1995-10-30 1998-04-01 Dow Corning Method for depositing Si-O containing coatings
TW362118B (en) 1995-10-30 1999-06-21 Dow Corning Method for depositing amorphous SiNC coatings
US5780163A (en) * 1996-06-05 1998-07-14 Dow Corning Corporation Multilayer coating for microelectronic devices
US5863595A (en) * 1996-10-04 1999-01-26 Dow Corning Corporation Thick ceramic coatings for electronic devices
US5807611A (en) * 1996-10-04 1998-09-15 Dow Corning Corporation Electronic coatings
US5711987A (en) * 1996-10-04 1998-01-27 Dow Corning Corporation Electronic coatings
US5762711A (en) * 1996-11-15 1998-06-09 Honeywell Inc. Coating delicate circuits
US5855962A (en) * 1997-01-09 1999-01-05 International Business Machines Corporation Flowable spin-on insulator
US5707681A (en) * 1997-02-07 1998-01-13 Dow Corning Corporation Method of producing coatings on electronic substrates
US6743856B1 (en) 1997-04-21 2004-06-01 Honeywell International Inc. Synthesis of siloxane resins
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US6143855A (en) * 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6015457A (en) * 1997-04-21 2000-01-18 Alliedsignal Inc. Stable inorganic polymers
US5866197A (en) * 1997-06-06 1999-02-02 Dow Corning Corporation Method for producing thick crack-free coating from hydrogen silsequioxane resin
TW392288B (en) 1997-06-06 2000-06-01 Dow Corning Thermally stable dielectric coatings
US6018002A (en) * 1998-02-06 2000-01-25 Dow Corning Corporation Photoluminescent material from hydrogen silsesquioxane resin
US6218020B1 (en) 1999-01-07 2001-04-17 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with high organic content
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
US5935638A (en) * 1998-08-06 1999-08-10 Dow Corning Corporation Silicon dioxide containing coating
EP1190277B1 (de) * 1999-06-10 2009-10-07 AlliedSignal Inc. Spin-on-glass antireflektionsbeschichtungen aufweisender halbleiter für photolithographie
US6593653B2 (en) 1999-09-30 2003-07-15 Novellus Systems, Inc. Low leakage current silicon carbonitride prepared using methane, ammonia and silane for copper diffusion barrier, etchstop and passivation applications
US6440550B1 (en) 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
US6472076B1 (en) 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
DE19953946A1 (de) * 1999-11-09 2001-05-10 Starck H C Gmbh Co Kg Kondensatorpulver
US6572974B1 (en) 1999-12-06 2003-06-03 The Regents Of The University Of Michigan Modification of infrared reflectivity using silicon dioxide thin films derived from silsesquioxane resins
US6368400B1 (en) * 2000-07-17 2002-04-09 Honeywell International Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
US6537733B2 (en) * 2001-02-23 2003-03-25 Applied Materials, Inc. Method of depositing low dielectric constant silicon carbide layers
BR0102414B1 (pt) * 2001-03-12 2014-09-30 Coppe Ufrj Composição de revestimento à base de nióbio
US6861164B2 (en) * 2001-03-23 2005-03-01 Honeywell International, Inc. Environmental and thermal barrier coating for ceramic components
US6737117B2 (en) 2002-04-05 2004-05-18 Dow Corning Corporation Hydrosilsesquioxane resin compositions having improved thin film properties
SE521977C2 (sv) * 2002-06-20 2003-12-23 Mobile Media Group Stockholm A Metod och apparat för att formatera en webbtjänst
US20040166692A1 (en) * 2003-02-26 2004-08-26 Loboda Mark Jon Method for producing hydrogenated silicon oxycarbide films
US7297731B2 (en) * 2003-03-11 2007-11-20 3M Innovative Properties Company Coating dispersions for optical fibers
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
CN100544836C (zh) * 2003-12-18 2009-09-30 杂混复合塑料公司 作为涂料、复合材料和添加剂的多面体低聚倍半硅氧烷和金属化的多面体低聚倍半硅氧烷
DE602004021085D1 (de) * 2004-03-11 2009-06-25 Corning Inc Keramikzusammensetzung mit einem Silsesquioxanpolymer
US7638178B2 (en) 2004-11-05 2009-12-29 Honeywell International Inc. Protective coating for ceramic components
EP1984173A2 (de) * 2006-01-25 2008-10-29 Ceramatec, Inc. Umgebungs- und wärmesperrbeschichtung für den schutz eines vorbeschichteten substrats
US20080026248A1 (en) * 2006-01-27 2008-01-31 Shekar Balagopal Environmental and Thermal Barrier Coating to Provide Protection in Various Environments
US8026040B2 (en) * 2007-02-20 2011-09-27 Az Electronic Materials Usa Corp. Silicone coating composition
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
JP4513912B2 (ja) 2008-03-21 2010-07-28 富士ゼロックス株式会社 画像形成装置用ベルト、ベルト張架装置及び画像形成装置
JP5513864B2 (ja) * 2008-12-12 2014-06-04 株式会社東芝 原子炉炉内構造物およびその製造方法
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8349985B2 (en) 2009-07-28 2013-01-08 Cheil Industries, Inc. Boron-containing hydrogen silsesquioxane polymer, integrated circuit device formed using the same, and associated methods
DE102010045035A1 (de) * 2010-09-10 2012-03-15 Siemens Aktiengesellschaft Verkapselung und Herstellen einer verkapselten bestückten Leiterplatte
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
EP3194502A4 (de) 2015-04-13 2018-05-16 Honeywell International Inc. Polysiloxanformulierungen und beschichtungen für optoelektronische anwendungen
CN115380013A (zh) * 2020-04-06 2022-11-22 盖列斯特有限公司 梯度玻璃状陶瓷结构及其自下而上的制备方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615272A (en) * 1968-11-04 1971-10-26 Dow Corning Condensed soluble hydrogensilsesquioxane resin
US3640093A (en) * 1969-03-10 1972-02-08 Owens Illinois Inc Process of converting metalorganic compounds and high purity products obtained therefrom
US3859126A (en) * 1970-10-27 1975-01-07 Owens Illinois Inc Ceramic substrates hermetically sealed with vitreous coatings
US3811918A (en) * 1971-12-20 1974-05-21 Owens Illinois Inc Process for producing protective glass coatings
JPS5921579A (ja) * 1982-07-29 1984-02-03 大森　守 炭化珪素焼結成形体とその製造方法
US4472510A (en) * 1982-12-23 1984-09-18 Dow Corning Corporation Carbon-containing monolithic glasses and ceramics prepared by a sol-gel process
US4460640A (en) * 1983-04-06 1984-07-17 Dow Corning Corporation Fiber reinforced glass matrix composites
JPS61155261A (ja) * 1984-04-27 1986-07-14 住友特殊金属株式会社 磁気ヘツドスライダ用材料及びその製造方法
JPS6237378A (ja) * 1985-08-08 1987-02-18 ウエスチングハウス　エレクトリック　コ−ポレ−ション 金属基体上に防食塗膜を形成する方法
US4754012A (en) * 1986-10-03 1988-06-28 Ppg Industries, Inc. Multi-component sol-gel protective coating composition
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US4822697A (en) * 1986-12-03 1989-04-18 Dow Corning Corporation Platinum and rhodium catalysis of low temperature formation multilayer ceramics
US4753855A (en) * 1986-12-04 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from metal oxides for protection of electronic devices
US4911992A (en) * 1986-12-04 1990-03-27 Dow Corning Corporation Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides
US4753856A (en) * 1987-01-02 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from silicate esters and metal oxides
JP2624254B2 (ja) * 1987-05-22 1997-06-25 東京応化工業株式会社 シリカ系被膜の膜質改善方法
JPS63293178A (ja) * 1987-05-25 1988-11-30 Hakusui Kagaku Kogyo Kk 金属材料の高温酸化防止用金属含有組成物およびその製造法
US4849140A (en) * 1987-08-05 1989-07-18 Southwest Research Institute Method for producing monosized ceramic particle through organometallic swollen latex particles
US4849296A (en) * 1987-12-28 1989-07-18 Dow Corning Corporation Multilayer ceramic coatings from metal oxides and hydrogen silsesquioxane resin ceramified in ammonia
US4847162A (en) * 1987-12-28 1989-07-11 Dow Corning Corporation Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia
US4929575A (en) * 1988-03-21 1990-05-29 The Dow Chemical Company Melt processable, green, ceramic precursor powder
US4842888A (en) * 1988-04-07 1989-06-27 Dow Corning Corporation Ceramic coatings from the pyrolysis in ammonia of mixtures of silicate esters and other metal oxide precursors
JPH0222475A (ja) * 1988-07-08 1990-01-25 Nec Corp 絶縁膜形成溶液および半導体装置の製造方法
US4885186A (en) * 1988-12-29 1989-12-05 Bell Communications Research, Inc. Method for preparation of silicate glasses of controlled index of refraction
US4970097A (en) * 1989-03-16 1990-11-13 Owens-Corning Fiberglas Corporation Method for forming abrasion resistant coating on fibrous glass substrate

Also Published As

Publication number Publication date
CA2034908A1 (en) 1991-08-16
EP0442632A3 (en) 1992-04-01
JPH05106054A (ja) 1993-04-27
US5290354A (en) 1994-03-01
EP0442632A2 (de) 1991-08-21
US4973526A (en) 1990-11-27
ES2096619T3 (es) 1997-03-16
DE69123269T2 (de) 1997-06-05
EP0442632B1 (de) 1996-11-27
JP2591863B2 (ja) 1997-03-19

Similar Documents

Publication Publication Date Title
DE69123269T2 (de) Überzugsschicht für mikroelektronische Anordnungen und Substrate
DE69132826D1 (de) Heizgerät für Halbleiterwafers oder Substrate
NO953298D0 (no) Belagt substrat og fremgangsmåte for dannelse derav
DE69529858D1 (de) Oberflächenbehandlung für Halbleitersubstrat
DE69404778D1 (de) Thermische Behandlungsmodul für Beschichtungs/Entwicklungseinrichtung für Substrat
DE59403364D1 (de) Metallbeschichtetes Substrat
DE69601697T2 (de) Glaszusammensetzung für Magnetplatten-Substrate und Magnetplatten-Substrat
DE69508816T2 (de) Substrat für integrierte Bauelemente mit einer Dünnschicht und Herstellungsverfahren
SG74107A1 (en) Semiconductor substrate and thin film semiconductor device method of manufacturing the same and anodizing apparatus
DE69604132T2 (de) Beschichtetes Substrat
FI952257A0 (fi) Hopeapinnoituksen muodostaminen lasimaiselle alustalle
DE69416881T2 (de) Beschichtung von elektronischen Substraten mit Silika aus Polysilazanen
DE69628505D1 (de) Halbleitendes Substrat und dessen Herstellungsverfahren
DE69111487T2 (de) Beschichtete Substrate.
DE69127515T2 (de) Substratvorspannungsgenerator für Halbleiteranordnungen
DE69513361T2 (de) Trägerbehälter für Substratscheiben
BR9611102A (pt) Composição de revestimento e substrato revestido
NO20022268D0 (no) Beleggingsmiddel og fremgangsmåte for belegging av overflaten av et substrat
DE69107170D1 (de) Trocknungsverfahren und -vorrichtungen für ein beschichtetes Substrat.
GB2249670B (en) Semiconductor device using insulation coated metal substrate
DE3379522D1 (en) Coated ceramic substrates for mounting integrated circuits and methods of coating such substrates
DE69223874T2 (de) Gläser für elektronische Substrate und daraus hergestellte Produkte
DE69301851T2 (de) Phosphatierungsbehandlung für metallische Substrate
BR9508713A (pt) Composição de revestimento e substrato revestido
DE69325034D1 (de) Unterdruckhaltevorrichtung für substrate mit keramischer vakuumspannplatte

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee