DE69032597D1 - Bipolartransistor mit Heteroübergang - Google Patents

Bipolartransistor mit Heteroübergang

Info

Publication number
DE69032597D1
DE69032597D1 DE69032597T DE69032597T DE69032597D1 DE 69032597 D1 DE69032597 D1 DE 69032597D1 DE 69032597 T DE69032597 T DE 69032597T DE 69032597 T DE69032597 T DE 69032597T DE 69032597 D1 DE69032597 D1 DE 69032597D1
Authority
DE
Germany
Prior art keywords
heterojunction
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69032597T
Other languages
English (en)
Other versions
DE69032597T2 (de
Inventor
Takahiko Endo
Riichi Katoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3905490A external-priority patent/JP2941335B2/ja
Priority claimed from JP14255090A external-priority patent/JPH0435037A/ja
Priority claimed from JP23136590A external-priority patent/JP3183882B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69032597D1 publication Critical patent/DE69032597D1/de
Publication of DE69032597T2 publication Critical patent/DE69032597T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
DE69032597T 1990-02-20 1990-12-31 Bipolartransistor mit Heteroübergang Expired - Fee Related DE69032597T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP3905490A JP2941335B2 (ja) 1990-02-20 1990-02-20 ヘテロ接合バイボーラトランジスタ
JP7667790 1990-03-28
JP14255090A JPH0435037A (ja) 1990-05-31 1990-05-31 ヘテロ接合バイポーラトランジスタ
JP23136590A JP3183882B2 (ja) 1990-03-28 1990-08-31 ヘテロ接合バイポーラトランジスタ

Publications (2)

Publication Number Publication Date
DE69032597D1 true DE69032597D1 (de) 1998-10-01
DE69032597T2 DE69032597T2 (de) 1999-03-25

Family

ID=27460699

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69032597T Expired - Fee Related DE69032597T2 (de) 1990-02-20 1990-12-31 Bipolartransistor mit Heteroübergang

Country Status (3)

Country Link
US (1) US5177583A (de)
EP (1) EP0445475B1 (de)
DE (1) DE69032597T2 (de)

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JP2600485B2 (ja) * 1990-11-28 1997-04-16 日本電気株式会社 半導体装置
JP3130545B2 (ja) * 1991-03-06 2001-01-31 株式会社東芝 半導体装置および半導体装置の製造方法
US5132764A (en) * 1991-03-21 1992-07-21 Texas Instruments Incorporated Multilayer base heterojunction bipolar transistor
US5270223A (en) * 1991-06-28 1993-12-14 Texas Instruments Incorporated Multiple layer wide bandgap collector structure for bipolar transistors
JP2855908B2 (ja) * 1991-09-05 1999-02-10 日本電気株式会社 半導体装置及びその製造方法
JPH05182980A (ja) * 1992-01-07 1993-07-23 Toshiba Corp ヘテロ接合バイポーラトランジスタ
US5304816A (en) * 1992-11-25 1994-04-19 At&T Bell Laboratories Article comprising a "ballistic" heterojunction bipolar transistor
JPH0793315B2 (ja) * 1992-11-27 1995-10-09 日本電気株式会社 半導体装置およびその製造方法
JP3156436B2 (ja) * 1993-04-05 2001-04-16 日本電気株式会社 ヘテロ接合バイポーラトランジスタ
US5382815A (en) * 1993-12-23 1995-01-17 International Business Machines Corporation Carrier conduction conductor-insulator semiconductor (CIS) transistor
US5461245A (en) * 1994-08-24 1995-10-24 At&T Corp. Article comprising a bipolar transistor with floating base
JPH08115921A (ja) * 1994-10-17 1996-05-07 Mitsubishi Electric Corp ヘテロ接合バイポーラトランジスタ，及びその製造方法
DE19617030C2 (de) * 1996-04-27 1999-11-18 Daimler Chrysler Ag Si/SiGe-Heterobipolartransistor mit hochdotiertem SiGe-Spacer
KR100400808B1 (ko) * 1997-06-24 2003-10-08 매사츄세츠 인스티튜트 오브 테크놀러지 그레이드된 ＧｅＳｉ층 및 평탄화를 사용한 Ｓｉ상의 Ｇｅ의 쓰레딩 전위 밀도 제어
US7227176B2 (en) 1998-04-10 2007-06-05 Massachusetts Institute Of Technology Etch stop layer system
DE19824110A1 (de) * 1998-05-29 1999-12-09 Daimler Chrysler Ag Resonanz Phasen Transistor mit Laufzeitverzögerung
JP3658745B2 (ja) * 1998-08-19 2005-06-08 株式会社ルネサステクノロジ バイポーラトランジスタ
US6602613B1 (en) 2000-01-20 2003-08-05 Amberwave Systems Corporation Heterointegration of materials using deposition and bonding
WO2001054175A1 (en) * 2000-01-20 2001-07-26 Amberwave Systems Corporation Low threading dislocation density relaxed mismatched epilayers without high temperature growth
US6531369B1 (en) * 2000-03-01 2003-03-11 Applied Micro Circuits Corporation Heterojunction bipolar transistor (HBT) fabrication using a selectively deposited silicon germanium (SiGe)
TW512529B (en) * 2000-06-14 2002-12-01 Infineon Technologies Ag Silicon bipolar transistor, circuit arrangement and method for producing a silicon bipolar transistor
JP2004507084A (ja) * 2000-08-16 2004-03-04 マサチューセッツ　インスティテュート　オブ　テクノロジー グレーデッドエピタキシャル成長を用いた半導体品の製造プロセス
US20020163013A1 (en) * 2000-09-11 2002-11-07 Kenji Toyoda Heterojunction bipolar transistor
US6649480B2 (en) * 2000-12-04 2003-11-18 Amberwave Systems Corporation Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
US20020100942A1 (en) * 2000-12-04 2002-08-01 Fitzgerald Eugene A. CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
US6724008B2 (en) 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6830976B2 (en) * 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6723661B2 (en) * 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6703688B1 (en) * 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
WO2002082514A1 (en) * 2001-04-04 2002-10-17 Massachusetts Institute Of Technology A method for semiconductor device fabrication
AU2002322581A1 (en) * 2001-07-20 2003-03-03 Microlink Devices, Inc. Graded base gaassb for high speed gaas hbt
WO2003009396A2 (en) * 2001-07-20 2003-01-30 Microlink Devices, Inc. Algaas or ingap low turn-on voltage gaas-based heterojunction bipolar transistor
WO2003025984A2 (en) 2001-09-21 2003-03-27 Amberwave Systems Corporation Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
AU2002341803A1 (en) 2001-09-24 2003-04-07 Amberwave Systems Corporation Rf circuits including transistors having strained material layers
JP3565274B2 (ja) * 2002-02-25 2004-09-15 住友電気工業株式会社 バイポーラトランジスタ
US7060632B2 (en) 2002-03-14 2006-06-13 Amberwave Systems Corporation Methods for fabricating strained layers on semiconductor substrates
US7615829B2 (en) * 2002-06-07 2009-11-10 Amberwave Systems Corporation Elevated source and drain elements for strained-channel heterojuntion field-effect transistors
US7307273B2 (en) * 2002-06-07 2007-12-11 Amberwave Systems Corporation Control of strain in device layers by selective relaxation
US7074623B2 (en) * 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
US7335545B2 (en) * 2002-06-07 2008-02-26 Amberwave Systems Corporation Control of strain in device layers by prevention of relaxation
US20030227057A1 (en) * 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
US6995430B2 (en) * 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US6946371B2 (en) * 2002-06-10 2005-09-20 Amberwave Systems Corporation Methods of fabricating semiconductor structures having epitaxially grown source and drain elements
US6982474B2 (en) * 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
EP1530800B1 (de) * 2002-08-23 2016-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. Halbleiter-heterostrukturen mit reduzierter anhäufung von versetzungen und entsprechende herstellungsverfahren
US7594967B2 (en) * 2002-08-30 2009-09-29 Amberwave Systems Corporation Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
EP2337062A3 (de) * 2003-01-27 2016-05-04 Taiwan Semiconductor Manufacturing Company, Limited Herstellungsverfahren von HALBLEITERSTRUKTUREN MIT STRUKTURHOMOGENITÄT
US7019383B2 (en) * 2003-02-26 2006-03-28 Skyworks Solutions, Inc. Gallium arsenide HBT having increased performance and method for its fabrication
CN100437970C (zh) * 2003-03-07 2008-11-26 琥珀波系统公司 一种结构及用于形成半导体结构的方法
WO2005052997A2 (en) * 2003-11-21 2005-06-09 Wisconsin Alumni Resarch Foundation Solid-state high power device and method
US7317215B2 (en) * 2004-09-21 2008-01-08 International Business Machines Corporation SiGe heterojunction bipolar transistor (HBT)
US7393733B2 (en) * 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
US20060113603A1 (en) * 2004-12-01 2006-06-01 Amberwave Systems Corporation Hybrid semiconductor-on-insulator structures and related methods
US20080050883A1 (en) * 2006-08-25 2008-02-28 Atmel Corporation Hetrojunction bipolar transistor (hbt) with periodic multilayer base
US20070102834A1 (en) * 2005-11-07 2007-05-10 Enicks Darwin G Strain-compensated metastable compound base heterojunction bipolar transistor
US8530934B2 (en) 2005-11-07 2013-09-10 Atmel Corporation Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto
US20070148890A1 (en) * 2005-12-27 2007-06-28 Enicks Darwin G Oxygen enhanced metastable silicon germanium film layer
US7846806B1 (en) * 2007-05-25 2010-12-07 National Semiconductor Corporation System and method for providing a self aligned silicon germanium (SiGe) heterojunction bipolar transistor using a mesa emitter-base architecture
US7795605B2 (en) * 2007-06-29 2010-09-14 International Business Machines Corporation Phase change material based temperature sensor
US9425260B2 (en) * 2014-03-13 2016-08-23 International Business Machines Corporation Application of super lattice films on insulator to lateral bipolar transistors
JP7094082B2 (ja) * 2017-06-14 2022-07-01 日本ルメンタム株式会社 光半導体素子、光サブアセンブリ、及び光モジュール
US11171210B2 (en) 2019-10-11 2021-11-09 Globalpoundries U.S. Inc. Double mesa heterojunction bipolar transistor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4593305A (en) * 1983-05-17 1986-06-03 Kabushiki Kaisha Toshiba Heterostructure bipolar transistor
JPS59211266A (ja) * 1983-05-17 1984-11-30 Toshiba Corp ヘテロ接合バイポ−ラトランジスタ
JP2542676B2 (ja) * 1987-07-02 1996-10-09 株式会社東芝 ヘテロ接合バイポ―ラトランジスタ
JP2623635B2 (ja) * 1988-02-16 1997-06-25 ソニー株式会社 バイポーラトランジスタ及びその製造方法

Also Published As

Publication number Publication date
EP0445475B1 (de) 1998-08-26
DE69032597T2 (de) 1999-03-25
US5177583A (en) 1993-01-05
EP0445475A3 (en) 1991-11-27
EP0445475A2 (de) 1991-09-11

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