DE69028669T2 - Dünnschicht-Transistor und seine Herstellung - Google Patents
Dünnschicht-Transistor und seine HerstellungInfo
- Publication number
- DE69028669T2 DE69028669T2 DE69028669T DE69028669T DE69028669T2 DE 69028669 T2 DE69028669 T2 DE 69028669T2 DE 69028669 T DE69028669 T DE 69028669T DE 69028669 T DE69028669 T DE 69028669T DE 69028669 T2 DE69028669 T2 DE 69028669T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- thin film
- film transistor
- transistor
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
- H01L29/6678—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates on sapphire substrates, e.g. SOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78627—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
- H01L29/78657—SOS transistors
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19826389 | 1989-07-31 | ||
JP21754389 | 1989-08-25 | ||
JP21754289 | 1989-08-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69028669D1 DE69028669D1 (de) | 1996-10-31 |
DE69028669T2 true DE69028669T2 (de) | 1997-02-20 |
Family
ID=27327477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69028669T Expired - Fee Related DE69028669T2 (de) | 1989-07-31 | 1990-07-30 | Dünnschicht-Transistor und seine Herstellung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5410172A (de) |
EP (1) | EP0412701B1 (de) |
JP (1) | JP2941908B2 (de) |
DE (1) | DE69028669T2 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2838318B2 (ja) * | 1990-11-30 | 1998-12-16 | 株式会社半導体エネルギー研究所 | 感光装置及びその作製方法 |
EP0499979A3 (en) | 1991-02-16 | 1993-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
US6713783B1 (en) | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
JP2873632B2 (ja) * | 1991-03-15 | 1999-03-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2845303B2 (ja) | 1991-08-23 | 1999-01-13 | 株式会社 半導体エネルギー研究所 | 半導体装置とその作製方法 |
US6849872B1 (en) | 1991-08-26 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
JP3437863B2 (ja) * | 1993-01-18 | 2003-08-18 | 株式会社半導体エネルギー研究所 | Mis型半導体装置の作製方法 |
FR2709378B1 (fr) * | 1993-01-29 | 1995-11-24 | Mitsubishi Electric Corp | Transistor à effet de champ et procédé pour la fabrication d'un tel transistor. |
US5719065A (en) * | 1993-10-01 | 1998-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with removable spacers |
JPH07335904A (ja) | 1994-06-14 | 1995-12-22 | Semiconductor Energy Lab Co Ltd | 薄膜半導体集積回路 |
JPH07199150A (ja) * | 1993-12-28 | 1995-08-04 | Canon Inc | 液晶表示装置 |
KR100205442B1 (ko) * | 1995-12-26 | 1999-07-01 | 구본준 | 박막트랜지스터 및 그의 제조방법 |
KR0177785B1 (ko) * | 1996-02-03 | 1999-03-20 | 김광호 | 오프셋 구조를 가지는 트랜지스터 및 그 제조방법 |
US5920085A (en) * | 1996-02-03 | 1999-07-06 | Samsung Electronics Co., Ltd. | Multiple floating gate field effect transistors and methods of operating same |
FR2750534B1 (fr) * | 1996-06-27 | 1998-08-28 | Commissariat Energie Atomique | Transistor et procede de realisation d'un transistor a contacts et a isolation de champ auto-alignes |
JP4318768B2 (ja) * | 1997-07-23 | 2009-08-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3701832B2 (ja) * | 2000-02-04 | 2005-10-05 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 薄膜トランジスタ、液晶表示パネル、および薄膜トランジスタの製造方法 |
JP2002185011A (ja) * | 2000-12-19 | 2002-06-28 | Seiko Epson Corp | 半導体装置 |
KR100366923B1 (ko) * | 2001-02-19 | 2003-01-06 | 삼성전자 주식회사 | 에스오아이 기판 및 이의 제조방법 |
US6774486B2 (en) * | 2001-10-10 | 2004-08-10 | Micron Technology, Inc. | Circuit boards containing vias and methods for producing same |
JP4278944B2 (ja) * | 2002-09-24 | 2009-06-17 | 東芝松下ディスプレイテクノロジー株式会社 | 光センサ素子、これを用いた平面表示装置 |
JP2004219261A (ja) * | 2003-01-15 | 2004-08-05 | Fuji Photo Film Co Ltd | 薄膜の解析方法 |
WO2004068541A2 (en) * | 2003-01-17 | 2004-08-12 | General Electric Company | Wafer handling apparatus |
US7531828B2 (en) * | 2003-06-26 | 2009-05-12 | Mears Technologies, Inc. | Semiconductor device including a strained superlattice between at least one pair of spaced apart stress regions |
US20070015344A1 (en) * | 2003-06-26 | 2007-01-18 | Rj Mears, Llc | Method for Making a Semiconductor Device Including a Strained Superlattice Between at Least One Pair of Spaced Apart Stress Regions |
US20060091379A1 (en) * | 2003-11-18 | 2006-05-04 | Hutchens Chriswell G | High-temperature devices on insulator substrates |
JP2006100721A (ja) * | 2004-09-30 | 2006-04-13 | Kobe Steel Ltd | 半導体素子及びその製造方法 |
US7572706B2 (en) * | 2007-02-28 | 2009-08-11 | Freescale Semiconductor, Inc. | Source/drain stressor and method therefor |
JP2016111105A (ja) * | 2014-12-03 | 2016-06-20 | 株式会社Joled | 薄膜トランジスタ及びその製造方法、並びに、表示装置 |
CN109888021A (zh) * | 2019-02-27 | 2019-06-14 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、阵列基板、显示装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0002107A3 (de) * | 1977-11-17 | 1979-09-05 | Rca Corporation | Verfahren zur Herstellung einer planaren Halbleiteranordnung |
DE2948120C2 (de) * | 1978-11-29 | 1983-06-23 | Nippon Electric Co., Ltd., Tokyo | Isolierschicht-Feldeffekttransistor mit einer inselförmigen Halbleiterschicht auf einem isolierenden Substrat und Verfahren zur Herstellung eines derartigen Isolierschicht-Feldeffekttransistors |
JPS5852881A (ja) * | 1981-09-25 | 1983-03-29 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
US4394182A (en) * | 1981-10-14 | 1983-07-19 | Rockwell International Corporation | Microelectronic shadow masking process for reducing punchthrough |
DE3688758T2 (de) * | 1985-04-08 | 1994-02-10 | Hitachi Ltd | Dünnfilmtransistor auf isolierendem Substrat. |
JP2505736B2 (ja) * | 1985-06-18 | 1996-06-12 | キヤノン株式会社 | 半導体装置の製造方法 |
FR2592224B1 (fr) * | 1985-12-20 | 1988-10-07 | Thomson Csf | Transistor a effet de champ, et circuit integre logique comportant un tel transistor |
US4778258A (en) * | 1987-10-05 | 1988-10-18 | General Electric Company | Protective tab structure for use in the fabrication of matrix addressed thin film transistor liquid crystal displays |
-
1990
- 1990-07-30 EP EP90308353A patent/EP0412701B1/de not_active Expired - Lifetime
- 1990-07-30 JP JP20276190A patent/JP2941908B2/ja not_active Expired - Fee Related
- 1990-07-30 DE DE69028669T patent/DE69028669T2/de not_active Expired - Fee Related
-
1992
- 1992-12-23 US US07/996,887 patent/US5410172A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0412701A3 (de) | 1991-04-03 |
US5410172A (en) | 1995-04-25 |
JP2941908B2 (ja) | 1999-08-30 |
DE69028669D1 (de) | 1996-10-31 |
JPH03155676A (ja) | 1991-07-03 |
EP0412701A2 (de) | 1991-02-13 |
EP0412701B1 (de) | 1996-09-25 |
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