DE68915947T2 - Flüssigkristall-Anzeigevorrichtung. - Google Patents

Flüssigkristall-Anzeigevorrichtung.

Info

Publication number
DE68915947T2
DE68915947T2 DE68915947T DE68915947T DE68915947T2 DE 68915947 T2 DE68915947 T2 DE 68915947T2 DE 68915947 T DE68915947 T DE 68915947T DE 68915947 T DE68915947 T DE 68915947T DE 68915947 T2 DE68915947 T2 DE 68915947T2
Authority
DE
Germany
Prior art keywords
liquid crystal
display device
crystal display
liquid
display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68915947T
Other languages
English (en)
Other versions
DE68915947D1 (de
Inventor
Kouji C O Intellectual Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE68915947D1 publication Critical patent/DE68915947D1/de
Application granted granted Critical
Publication of DE68915947T2 publication Critical patent/DE68915947T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
DE68915947T 1988-11-15 1989-10-24 Flüssigkristall-Anzeigevorrichtung. Expired - Fee Related DE68915947T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28677188 1988-11-15

Publications (2)

Publication Number Publication Date
DE68915947D1 DE68915947D1 (de) 1994-07-14
DE68915947T2 true DE68915947T2 (de) 1994-09-22

Family

ID=17708837

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68915947T Expired - Fee Related DE68915947T2 (de) 1988-11-15 1989-10-24 Flüssigkristall-Anzeigevorrichtung.

Country Status (3)

Country Link
US (1) US5042918A (de)
EP (1) EP0369621B1 (de)
DE (1) DE68915947T2 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5058995A (en) * 1990-03-15 1991-10-22 Thomson Consumer Electronics, Inc. Pixel electrode structure for liquid crystal display devices
JPH06208132A (ja) * 1990-03-24 1994-07-26 Sony Corp 液晶表示装置
JP2622183B2 (ja) * 1990-04-05 1997-06-18 シャープ株式会社 アクティブマトリクス表示装置
JPH0431826A (ja) * 1990-05-29 1992-02-04 Alps Electric Co Ltd 液晶表示素子
US5245450A (en) * 1990-07-23 1993-09-14 Hosiden Corporation Liquid crystal display device with control capacitors for gray-scale
JP2650780B2 (ja) * 1990-11-30 1997-09-03 シャープ株式会社 アクティブマトリクス基板
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US5302987A (en) * 1991-05-15 1994-04-12 Sharp Kabushiki Kaisha Active matrix substrate including connecting electrode with extended portion
JP2753160B2 (ja) * 1991-10-08 1998-05-18 株式会社フロンテック アクティブマトリックス形液晶表示素子の基板
US5576858A (en) * 1991-10-14 1996-11-19 Hosiden Corporation Gray scale LCD control capacitors formed between a control capacitor electrode on one side of an insulating layer and two subpixel electrodes on the other side
JPH05107556A (ja) * 1991-10-14 1993-04-30 Hosiden Corp 液晶表示素子画素
JP2814161B2 (ja) 1992-04-28 1998-10-22 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置およびその駆動方法
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US5707746A (en) * 1992-09-25 1998-01-13 Sharp Kabushiki Kaisha Thin film transistor device with advanced characteristics by improved matching between a glass substrate and a silicon nitride layer
JP2860226B2 (ja) * 1993-06-07 1999-02-24 シャープ株式会社 液晶表示装置およびその製造方法
JP2975844B2 (ja) * 1993-06-24 1999-11-10 三洋電機株式会社 液晶表示装置
US7310072B2 (en) 1993-10-22 2007-12-18 Kopin Corporation Portable communication display device
KR100343376B1 (ko) * 1993-12-31 2002-11-23 고려화학 주식회사 반도체소자봉지용경화제의제조방법및이를함유하는반도체소자봉지용수지조성물
DE19500380C2 (de) * 1994-05-20 2001-05-17 Mitsubishi Electric Corp Aktivmatrix-Flüssigkristallanzeige und Herstellungsverfahren dafür
JPH08201853A (ja) * 1994-11-24 1996-08-09 Toshiba Electron Eng Corp 電極基板および平面表示装置
KR0171092B1 (ko) * 1995-07-06 1999-05-01 구자홍 기판 제조방법
JPH09236826A (ja) * 1995-09-28 1997-09-09 Sharp Corp 液晶表示素子およびその製造方法
US6197209B1 (en) 1995-10-27 2001-03-06 Lg. Philips Lcd Co., Ltd. Method of fabricating a substrate
TW335503B (en) * 1996-02-23 1998-07-01 Semiconductor Energy Lab Kk Semiconductor thin film and manufacturing method and semiconductor device and its manufacturing method
JP3149793B2 (ja) * 1996-07-22 2001-03-26 日本電気株式会社 反射型液晶表示装置及びその製造方法
US7372447B1 (en) 1996-10-31 2008-05-13 Kopin Corporation Microdisplay for portable communication systems
US7321354B1 (en) 1996-10-31 2008-01-22 Kopin Corporation Microdisplay for portable communication systems
US6677936B2 (en) 1996-10-31 2004-01-13 Kopin Corporation Color display system for a camera
US6486862B1 (en) * 1996-10-31 2002-11-26 Kopin Corporation Card reader display system
JP3269787B2 (ja) * 1997-05-27 2002-04-02 シャープ株式会社 液晶表示装置
US6909419B2 (en) 1997-10-31 2005-06-21 Kopin Corporation Portable microdisplay system
US6552704B2 (en) 1997-10-31 2003-04-22 Kopin Corporation Color display with thin gap liquid crystal
US6476784B2 (en) 1997-10-31 2002-11-05 Kopin Corporation Portable display system with memory card reader
KR100357213B1 (ko) * 1998-07-23 2002-10-18 엘지.필립스 엘시디 주식회사 멀티도메인 액정표시소자
TW514757B (en) * 1998-11-26 2002-12-21 Seiko Epson Corp Electro-optical device and production method thereof and electronic equipment
US6469317B1 (en) 1998-12-18 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP3492582B2 (ja) * 2000-03-03 2004-02-03 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置及びその製造方法
TWI225177B (en) * 2001-09-12 2004-12-11 Hannstar Display Corp Manufacturing method of thin film transistor (TFT) liquid crystal display (LCD)
US7359105B2 (en) * 2006-02-07 2008-04-15 Sharp Kabushiki Kaisha Spatial light modulator and a display device
US8294840B2 (en) * 2008-03-19 2012-10-23 Chimei Innolux Corporation Liquid crystal display device with fringe field switching mode

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3862360A (en) * 1973-04-18 1975-01-21 Hughes Aircraft Co Liquid crystal display system with integrated signal storage circuitry
US4103297A (en) * 1976-12-20 1978-07-25 Hughes Aircraft Company Light-insensitive matrix addressed liquid crystal display system
JPS5764776A (en) * 1980-10-09 1982-04-20 Nippon Denshi Kogyo Shinko Liquid crystal display unit
EP0071244B1 (de) * 1981-07-27 1988-11-23 Kabushiki Kaisha Toshiba Dünnschichttransistor und Verfahren zu dessen Herstellung
JPS58205181A (ja) * 1982-05-26 1983-11-30 セイコーインスツルメンツ株式会社 マトリクス液晶表示装置
JPS59119390A (ja) * 1982-12-25 1984-07-10 株式会社東芝 薄膜トランジスタ回路
JPS59119329A (ja) * 1982-12-27 1984-07-10 Toshiba Corp 液晶表示装置
JPS6045219A (ja) * 1983-08-23 1985-03-11 Toshiba Corp アクテイブマトリクス型表示装置
US4715685A (en) * 1985-03-04 1987-12-29 Energy Conversion Devices, Inc. Liquid crystal display having potential source in a diode ring
JPS62100734A (ja) * 1985-10-28 1987-05-11 Seiko Epson Corp 液晶表示装置
JP2520592B2 (ja) * 1985-11-08 1996-07-31 キヤノン株式会社 液晶表示素子
DE3684150D1 (de) * 1986-09-26 1992-04-09 Ibm Halbleiter-integrierte anzeige.
JPH0691252B2 (ja) * 1986-11-27 1994-11-14 日本電気株式会社 薄膜トランジスタアレイ
JPS63175832A (ja) * 1987-01-16 1988-07-20 Hosiden Electronics Co Ltd アクテイブマトリクス液晶表示装置
US4839707A (en) * 1987-08-27 1989-06-13 Hughes Aircraft Company LCMOS displays fabricated with implant treated silicon wafers

Also Published As

Publication number Publication date
EP0369621B1 (de) 1994-06-08
EP0369621A3 (de) 1991-04-10
DE68915947D1 (de) 1994-07-14
EP0369621A2 (de) 1990-05-23
US5042918A (en) 1991-08-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee