DE68912640D1 - Ausgangsschaltung für eine integrierte Halbleiterschaltung mit reduziertem Speiseleitungsrauschen. - Google Patents

Ausgangsschaltung für eine integrierte Halbleiterschaltung mit reduziertem Speiseleitungsrauschen.

Info

Publication number
DE68912640D1
DE68912640D1 DE89107943T DE68912640T DE68912640D1 DE 68912640 D1 DE68912640 D1 DE 68912640D1 DE 89107943 T DE89107943 T DE 89107943T DE 68912640 T DE68912640 T DE 68912640T DE 68912640 D1 DE68912640 D1 DE 68912640D1
Authority
DE
Germany
Prior art keywords
semiconductor integrated
feed line
line noise
integrated circuit
reduced feed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89107943T
Other languages
English (en)
Other versions
DE68912640T2 (de
Inventor
Fuminari Intellectual P Tanaka
Satoshi Intellectual Pr Nonaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68912640D1 publication Critical patent/DE68912640D1/de
Publication of DE68912640T2 publication Critical patent/DE68912640T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H03K17/164—Soft switching using parallel switching arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
    • H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
DE89107943T 1988-05-02 1989-05-02 Ausgangsschaltung für eine integrierte Halbleiterschaltung mit reduziertem Speiseleitungsrauschen. Expired - Fee Related DE68912640T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63109312A JPH01279631A (ja) 1988-05-02 1988-05-02 半導体集積回路の出力回路

Publications (2)

Publication Number Publication Date
DE68912640D1 true DE68912640D1 (de) 1994-03-10
DE68912640T2 DE68912640T2 (de) 1994-05-11

Family

ID=14507016

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89107943T Expired - Fee Related DE68912640T2 (de) 1988-05-02 1989-05-02 Ausgangsschaltung für eine integrierte Halbleiterschaltung mit reduziertem Speiseleitungsrauschen.

Country Status (5)

Country Link
US (1) US5128567A (de)
EP (1) EP0340731B1 (de)
JP (1) JPH01279631A (de)
KR (1) KR930000970B1 (de)
DE (1) DE68912640T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3722788A1 (de) * 1987-07-10 1989-01-19 Bayer Ag Chirale 6-hydroxymethylenverzweigte 3-amino-4,5-dihydroxypiperidine, zwischenprodukte zu ihrer herstellung, verfahren zu ihrer herstellung und ihre verwendung
US5231311A (en) * 1989-02-28 1993-07-27 Vlsi Technology, Inc. Digital output buffer and method with slew rate control and reduced crowbar current
US5109166A (en) * 1990-04-30 1992-04-28 International Business Machines Corporation Sinusoidal signal generator
JP2616204B2 (ja) * 1990-10-24 1997-06-04 日本電気株式会社 出力バッファ回路
JPH04165669A (ja) * 1990-10-29 1992-06-11 Mitsubishi Denki Eng Kk 集積化ｃｍｏｓ出力回路
JPH04248192A (ja) * 1991-01-23 1992-09-03 Nec Ic Microcomput Syst Ltd 半導体記憶装置の出力回路
JPH0555881A (ja) * 1991-08-27 1993-03-05 Toshiba Corp 遅延回路
DE4200680A1 (de) * 1992-01-14 1993-07-15 Bosch Gmbh Robert Treiberschaltung
US5287021A (en) * 1992-05-06 1994-02-15 Motorola, Inc. Low noise BICMOS circuit
JPH06261386A (ja) * 1993-03-05 1994-09-16 Pioneer Electron Corp ミューティング制御回路
JP4467622B2 (ja) * 1993-11-17 2010-05-26 株式会社ルネサステクノロジ 出力回路
US5552744A (en) * 1994-08-11 1996-09-03 Ltx Corporation High speed IDDQ monitor circuit
US5694063A (en) * 1994-08-11 1997-12-02 Ltx Corporation High speed IDDQ monitor circuit
US5838177A (en) * 1997-01-06 1998-11-17 Micron Technology, Inc. Adjustable output driver circuit having parallel pull-up and pull-down elements
JPH10290147A (ja) * 1997-04-14 1998-10-27 Mitsubishi Electric Corp 遅延量可変回路
CN1249922C (zh) * 1998-08-28 2006-04-05 松下电器产业株式会社 开关稳压器及应用它的lsi系统
US6177818B1 (en) 1999-04-30 2001-01-23 International Business Machines Corporation Complementary depletion switch body stack off-chip driver
US6564173B1 (en) * 2000-10-17 2003-05-13 Daimlerchrysler Corporation Remote multiplexed diagnostic circuitry and a method of detecting faults in sequentially driven loads
US6525569B1 (en) * 2001-09-21 2003-02-25 International Business Machines Corporation Driver circuit having shapable transition waveforms
JP2004104940A (ja) * 2002-09-11 2004-04-02 Nidec Copal Corp モータ駆動装置
DE10355509A1 (de) * 2003-11-27 2005-07-07 Infineon Technologies Ag Schaltung und Verfahren zum verzögerten Einschalten einer elektrischen Last
DE10358276A1 (de) * 2003-12-11 2005-07-21 Conti Temic Microelectronic Gmbh Verfahren und Schaltungsanordnung zur Ansteuerung eines Lastelements mittels eines elektronischen Schaltelements im Laststromkreis
US7061301B2 (en) 2003-12-19 2006-06-13 Power Integrations, Inc. Method and apparatus switching a semiconductor switch with a multi-state drive circuit
JP2007013916A (ja) * 2005-05-30 2007-01-18 Denso Corp 信号生成装置
FR2900003A1 (fr) * 2006-04-13 2007-10-19 St Microelectronics Sa Circuit tampon comprenant des moyens de controle de la pente du signal de sortie
CN101765973A (zh) * 2007-09-27 2010-06-30 松下电器产业株式会社 半导体集成电路装置、通信装置、信息再生装置、图像显示装置、电子装置、电子控制装置以及移动体
KR100880924B1 (ko) * 2007-12-20 2009-02-04 주식회사 하이닉스반도체 직류 대 직류 전압 변환 장치
CA2759210A1 (en) 2009-05-11 2010-11-18 Ss Sc Ip, Llc Gate driver for enhancement-mode and depletion-mode wide bandgap semiconductor jfets
US10483973B2 (en) * 2017-12-06 2019-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Temperature instability-aware circuit

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60141020A (ja) * 1983-12-28 1985-07-26 Nec Corp Ｃｍｏｓ論理回路
US4700089A (en) * 1984-08-23 1987-10-13 Fujitsu Limited Delay circuit for gate-array LSI
JPS6214520A (ja) * 1985-07-12 1987-01-23 Sony Corp メモリの出力バツフア回路
US4719369A (en) * 1985-08-14 1988-01-12 Hitachi, Ltd. Output circuit having transistor monitor for matching output impedance to load impedance
JPS6248806A (ja) * 1985-08-28 1987-03-03 Nec Corp 出力回路
EP0253914A1 (de) * 1986-07-23 1988-01-27 Deutsche ITT Industries GmbH Isolierschicht-Feldeffekttransistor-Gegentakttreiberstufe mit Kompensierung von Betriebsparameterschwankungen und Fertigungsstreuungen
US4725747A (en) * 1986-08-29 1988-02-16 Texas Instruments Incorporated Integrated circuit distributed geometry to reduce switching noise
US4789793A (en) * 1987-02-24 1988-12-06 Texas Instruments Incorporated Integrated FET circuit to reduce switching noise
JP2633562B2 (ja) * 1987-05-27 1997-07-23 株式会社東芝 半導体集積回路
JPS63299513A (ja) * 1987-05-29 1988-12-07 Toshiba Corp 出力回路
US4820942A (en) * 1988-01-27 1989-04-11 Advanced Micro Devices, Inc. High-speed, high-drive output buffer circuits with reduced ground bounce

Also Published As

Publication number Publication date
DE68912640T2 (de) 1994-05-11
KR930000970B1 (ko) 1993-02-11
EP0340731A3 (en) 1990-05-23
JPH01279631A (ja) 1989-11-09
US5128567A (en) 1992-07-07
EP0340731A2 (de) 1989-11-08
KR890017807A (ko) 1989-12-18
EP0340731B1 (de) 1994-01-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee