DE68909270D1 - Halbleiter-Dünnschicht und Herstellungsverfahren. - Google Patents

Halbleiter-Dünnschicht und Herstellungsverfahren.

Info

Publication number
DE68909270D1
DE68909270D1 DE89301423T DE68909270T DE68909270D1 DE 68909270 D1 DE68909270 D1 DE 68909270D1 DE 89301423 T DE89301423 T DE 89301423T DE 68909270 T DE68909270 T DE 68909270T DE 68909270 D1 DE68909270 D1 DE 68909270D1
Authority
DE
Germany
Prior art keywords
thin film
manufacturing process
semiconductor thin
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89301423T
Other languages
English (en)
Other versions
DE68909270T2 (de
Inventor
Hideaki Horikawa
Masahiro Akiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Application granted granted Critical
Publication of DE68909270D1 publication Critical patent/DE68909270D1/de
Publication of DE68909270T2 publication Critical patent/DE68909270T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/938—Lattice strain control or utilization
DE89301423T 1988-02-16 1989-02-15 Halbleiter-Dünnschicht und Herstellungsverfahren. Expired - Fee Related DE68909270T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63031878A JPH01207920A (ja) 1988-02-16 1988-02-16 ＩｎＰ半導体薄膜の製造方法

Publications (2)

Publication Number Publication Date
DE68909270D1 true DE68909270D1 (de) 1993-10-28
DE68909270T2 DE68909270T2 (de) 1994-02-24

Family

ID=12343294

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89301423T Expired - Fee Related DE68909270T2 (de) 1988-02-16 1989-02-15 Halbleiter-Dünnschicht und Herstellungsverfahren.

Country Status (4)

Country Link
US (2) US4965224A (de)
EP (1) EP0329400B1 (de)
JP (1) JPH01207920A (de)
DE (1) DE68909270T2 (de)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021360A (en) * 1989-09-25 1991-06-04 Gte Laboratories Incorporated Method of farbicating highly lattice mismatched quantum well structures
JP2560562B2 (ja) * 1991-04-30 1996-12-04 住友化学工業株式会社 エピタキシャル成長化合物半導体結晶
JP3286921B2 (ja) * 1992-10-09 2002-05-27 富士通株式会社 シリコン基板化合物半導体装置
JP3093904B2 (ja) * 1993-02-16 2000-10-03 富士通株式会社 化合物半導体結晶の成長方法
JP2550859B2 (ja) * 1993-06-01 1996-11-06 日本電気株式会社 電界効果トランジスタ
JPH0897159A (ja) * 1994-09-29 1996-04-12 Handotai Process Kenkyusho:Kk エピタキシャル成長方法および成長装置
PT796280E (pt) 1994-12-28 2003-08-29 Univ Kentucky Anticorpo monoclonal 3h1 anti-idiotipico dos murinos
US5833749A (en) * 1995-01-19 1998-11-10 Nippon Steel Corporation Compound semiconductor substrate and process of producing same
US6949244B1 (en) 1995-12-20 2005-09-27 The Board Of Trustees Of The University Of Kentucky Murine monoclonal anti-idiotype antibody 11D10 and methods of use thereof
US6010937A (en) * 1995-09-05 2000-01-04 Spire Corporation Reduction of dislocations in a heteroepitaxial semiconductor structure
DK0912738T3 (da) 1996-05-22 2008-11-17 Viventia Biotech Inc Antigen-bindende-fragmenter der specifikt detekterer cancerceller, nukleotider der koder fragmenterne og anvendelse deraf til profylakse og detektion af cancere
JP3268731B2 (ja) 1996-10-09 2002-03-25 沖電気工業株式会社 光電変換素子
US7115722B1 (en) 1997-05-22 2006-10-03 Viventia Biotech, Inc. Antigen binding fragments that specifically detect cancer cells, nucleotides encoding the fragments, and use thereof for the prophylaxis and detection of cancers
US5912481A (en) 1997-09-29 1999-06-15 National Scientific Corp. Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction
US6423990B1 (en) 1997-09-29 2002-07-23 National Scientific Corporation Vertical heterojunction bipolar transistor
US7030228B1 (en) 1999-11-15 2006-04-18 Miltenyi Biotec Gmbh Antigen-binding fragments specific for dendritic cells, compositions and methods of use thereof antigens recognized thereby and cells obtained thereby
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
WO2001075985A1 (fr) * 2000-03-30 2001-10-11 Fujitsu Limited Actionneur piezoelectrique, son procede de fabrication et tete a jet d'encre dotee de cet actionneur
EP1290733A1 (de) 2000-05-31 2003-03-12 Motorola, Inc. Halbleiterbauelement und dessen herstellungsverfahren
WO2002009187A2 (en) 2000-07-24 2002-01-31 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6440764B1 (en) 2000-11-22 2002-08-27 Agere Systems Guardian Corp. Enhancement of carrier concentration in As-containing contact layers
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6872252B2 (en) 2002-03-06 2005-03-29 Agilent Technologies, Inc. Lead-based perovskite buffer for forming indium phosphide on silicon
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
FR2855650B1 (fr) * 2003-05-30 2006-03-03 Soitec Silicon On Insulator Substrats pour systemes contraints et procede de croissance cristalline sur un tel substrat
KR101037793B1 (ko) * 2004-06-30 2011-05-27 삼성전자주식회사 레이저 다이오드의 제조방법
WO2011161545A2 (en) 2010-06-04 2011-12-29 The Netherlands Cancer Institute Non-hydrolyzable protein conjugates, methods and compositions related thereto
RU2643931C2 (ru) 2013-06-28 2018-02-06 Интел Корпорейшн Устройства, основанные на избирательно эпитаксиально выращенных материалах iii-v групп
EP3021352B1 (de) 2014-11-13 2020-10-07 IMEC vzw Verfahren zur Reduzierung des Kontaktwiderstandes in einem Transistor
KR20210124308A (ko) 2019-01-30 2021-10-14 트루바인딩 아이엔씨. 항-gal3 항체 및 이의 용도
CN111681950B (zh) * 2020-07-31 2023-10-24 广东省大湾区集成电路与系统应用研究院 一种半导体结构及其制造方法
CN111668090B (zh) * 2020-07-31 2023-03-14 广东省大湾区集成电路与系统应用研究院 一种半导体结构及其制造方法
CN114134565B (zh) * 2021-11-10 2023-04-25 江苏华兴激光科技有限公司 一种基于GaAs衬底制备InP薄膜的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012724A (ja) * 1983-07-01 1985-01-23 Agency Of Ind Science & Technol 化合物半導体の成長方法
US4591654A (en) * 1983-07-18 1986-05-27 Nippon Telegraph And Telephone Public Corporation Solar cells based on indium phosphide
JPS61212072A (ja) * 1985-03-18 1986-09-20 Nec Corp 半導体受光素子
JPS62130511A (ja) * 1985-12-02 1987-06-12 Hitachi Ltd 半導体素子製造方法
JPS62283899A (ja) * 1986-06-02 1987-12-09 Nippon Telegr & Teleph Corp <Ntt> ＩｎＰ単結晶薄膜の製造方法
US4774554A (en) * 1986-12-16 1988-09-27 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing Ti-doped Group III-V epitaxial layer
CA1274900A (en) * 1987-01-05 1990-10-02 Nec Corporation Field-effect transistor and the same associated with an optical semiconductor device
US5011550A (en) * 1987-05-13 1991-04-30 Sharp Kabushiki Kaisha Laminated structure of compound semiconductors
EP0297867B1 (de) * 1987-07-01 1993-10-06 Nec Corporation Verfahren zur Züchtung eines Halbleiterkristalles aus III-V-Gruppen-Verbindung auf einem Si-Substrat

Also Published As

Publication number Publication date
JPH01207920A (ja) 1989-08-21
US5053835A (en) 1991-10-01
EP0329400B1 (de) 1993-09-22
US4965224A (en) 1990-10-23
DE68909270T2 (de) 1994-02-24
EP0329400A2 (de) 1989-08-23
EP0329400A3 (en) 1990-08-16

Similar Documents

Publication Publication Date Title
DE68909270T2 (de) Halbleiter-Dünnschicht und Herstellungsverfahren.
DE3786031T2 (de) Dünnschicht-Halbleiterbauelement und sein Herstellungsverfahren.
DE68923054D1 (de) Dünnschicht-Transistortafel und Herstellungsverfahren.
DE69014027D1 (de) Dünnfilmkondensatoren und deren Herstellungsverfahren.
KR890015366A (ko) 반도체 박막형성법
KR900019215A (ko) 반도체장치 및 그의 제조방법
DE69017802D1 (de) Dünnfilmkondensator und dessen Herstellungsverfahren.
DE3584915D1 (de) Halbleitermaterial und substrat.
KR910007164A (ko) 반도체장치 및 그 제조방법
DE68925374D1 (de) Halbleiterherstellungsvorrichtung
DE68928448D1 (de) Halbleitervorrichtung und Herstellungsverfahren
KR900008556A (ko) 필름 콘덴서 및 이의 제조방법
DE68920603D1 (de) Gehäuse von integrierten Schaltungen und Herstellungsverfahren.
NO890045D0 (no) Baatskrog og fremgangsmaate for fremstilling og belegging derav.
GB8924601D0 (en) Method for manufacturing organic semiconductor thin film and semiconductor device comprising the thin film
DE3883188D1 (de) Duennfilm-halbleiteranordung.
NO892669L (no) Fremgangsmaate for fremstilling av solcelle-silisium.
KR900008664A (ko) 캐리어기판 및 그 제조방법
DE3871503D1 (de) Halbleiterlaservorrichtung und herstellung derselben.
DE3884502T2 (de) Polydiacetylen-Dünnschicht-Herstellungsverfahren.
DE3884712D1 (de) Halbleiterspeichervorrichtung und Herstellungsverfahren.
DE69016465D1 (de) Organsilikonverbindung und Herstellungsverfahren dafür.
DE68914876T2 (de) Dünnschichtwiderstand und Herstellungsverfahren.
DE3886337D1 (de) Halbleiteranordnungen und Herstellungsverfahren.
KR890015360A (ko) 반도체장치 및 그 제조방법

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee