DE60328492D1 - Verfahren zur erzeugung von nanoteilchen - Google Patents

Verfahren zur erzeugung von nanoteilchen

Info

Publication number
DE60328492D1
DE60328492D1 DE60328492T DE60328492T DE60328492D1 DE 60328492 D1 DE60328492 D1 DE 60328492D1 DE 60328492 T DE60328492 T DE 60328492T DE 60328492 T DE60328492 T DE 60328492T DE 60328492 D1 DE60328492 D1 DE 60328492D1
Authority
DE
Germany
Prior art keywords
nanoteiles
producing
producing nanoteiles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60328492T
Other languages
English (en)
Inventor
Ichiro Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Application granted granted Critical
Publication of DE60328492D1 publication Critical patent/DE60328492D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54—Organic compounds
    • C30B29/58—Macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
DE60328492T 2002-05-28 2003-05-28 Verfahren zur erzeugung von nanoteilchen Expired - Lifetime DE60328492D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002154778 2002-05-28
PCT/JP2003/006637 WO2003099708A1 (fr) 2002-05-28 2003-05-28 Procede de production de nanoparticules et nanoparticules produites selon ce procede

Publications (1)

Publication Number Publication Date
DE60328492D1 true DE60328492D1 (de) 2009-09-03

Family

ID=29561382

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60328492T Expired - Lifetime DE60328492D1 (de) 2002-05-28 2003-05-28 Verfahren zur erzeugung von nanoteilchen

Country Status (6)

Country Link
US (1) US7129058B2 (de)
EP (1) EP1514838B1 (de)
JP (1) JP3683265B2 (de)
AU (1) AU2003241813A1 (de)
DE (1) DE60328492D1 (de)
WO (1) WO2003099708A1 (de)

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GB0409877D0 (en) 2004-04-30 2004-06-09 Univ Manchester Preparation of nanoparticle materials
US7588828B2 (en) 2004-04-30 2009-09-15 Nanoco Technologies Limited Preparation of nanoparticle materials
US7968273B2 (en) * 2004-06-08 2011-06-28 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7776758B2 (en) 2004-06-08 2010-08-17 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US8709892B2 (en) * 2005-05-23 2014-04-29 Darpa Nanoparticles in a flash memory using chaperonin proteins
WO2006132050A1 (ja) * 2005-06-07 2006-12-14 Matsushita Electric Industrial Co., Ltd. 酸化亜鉛－タンパク質複合体の製造方法
KR100756320B1 (ko) * 2005-06-29 2007-09-07 한국화학연구원 단백질 나노입자를 이용한 탄소나노튜브 트랜지스터 및이의 제조 방법
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7989290B2 (en) 2005-08-04 2011-08-02 Micron Technology, Inc. Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge traps
US7575978B2 (en) 2005-08-04 2009-08-18 Micron Technology, Inc. Method for making conductive nanoparticle charge storage element
GB2429838B (en) 2005-08-12 2011-03-09 Nanoco Technologies Ltd Nanoparticles
US7897408B2 (en) 2005-09-12 2011-03-01 Japan Science And Technology Agency Method for producing CdS-apoferritin and ZnS-apoferritin complexes
GB0522027D0 (en) 2005-10-28 2005-12-07 Nanoco Technologies Ltd Controlled preparation of nanoparticle materials
GB0606845D0 (en) 2006-04-05 2006-05-17 Nanoco Technologies Ltd Labelled beads
CN101652469B (zh) * 2006-12-06 2014-04-16 米纳瓦生物技术公司 用于鉴定和操作细胞的方法
JP4149504B2 (ja) * 2006-12-07 2008-09-10 松下電器産業株式会社 フェリチンを基板上に二次元配列させる方法
JP5306604B2 (ja) * 2007-02-28 2013-10-02 富士通株式会社 二値半導体記憶装置
EP2139813A4 (de) * 2007-03-23 2010-03-31 Univ Columbia Quantenpunktmarkierte stammzellen zur verwendung bei der bereitstellung von schrittmacherfunktion
US8563348B2 (en) 2007-04-18 2013-10-22 Nanoco Technologies Ltd. Fabrication of electrically active films based on multiple layers
US20080264479A1 (en) * 2007-04-25 2008-10-30 Nanoco Technologies Limited Hybrid Photovoltaic Cells and Related Methods
US8367506B2 (en) 2007-06-04 2013-02-05 Micron Technology, Inc. High-k dielectrics with gold nano-particles
CN101096687B (zh) * 2007-07-11 2012-08-29 武汉大学 一种利用微生物细胞制备硒化镉量子点的方法
ATE513890T1 (de) * 2007-09-28 2011-07-15 Nanoco Technologies Ltd Kern-hülle-nanopartikel und herstellungsverfahren dafür
US8784701B2 (en) 2007-11-30 2014-07-22 Nanoco Technologies Ltd. Preparation of nanoparticle material
EP2250212A1 (de) 2008-02-25 2010-11-17 Nanoco Technologies Limited Verkappungsmittel für halbleiternanopartikel
GB0813273D0 (en) 2008-07-19 2008-08-27 Nanoco Technologies Ltd Method for producing aqueous compatible nanoparticles
GB0814458D0 (en) 2008-08-07 2008-09-10 Nanoco Technologies Ltd Surface functionalised nanoparticles
EP2344632B1 (de) 2008-10-09 2022-12-28 Minerva Biotechnologies Corporation Verfahren zur herbeiführung von pluripotenzen in zellen
GB0820101D0 (en) 2008-11-04 2008-12-10 Nanoco Technologies Ltd Surface functionalised nanoparticles
GB0821122D0 (en) 2008-11-19 2008-12-24 Nanoco Technologies Ltd Semiconductor nanoparticle - based light emitting devices and associated materials and methods
GB0901857D0 (en) * 2009-02-05 2009-03-11 Nanoco Technologies Ltd Encapsulated nanoparticles
CN104293732A (zh) * 2009-06-11 2015-01-21 米纳瓦生物技术公司 用于培养干细胞和祖细胞的方法
GB0916700D0 (en) 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
GB0916699D0 (en) 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
WO2011062791A2 (en) * 2009-11-17 2011-05-26 3M Innovative Properties Company Texturing surface of light-absorbing substrate
US8808558B2 (en) * 2010-02-04 2014-08-19 National Sun Yat-Sen University System and method for alignment of nanoparticles on substrate
TWI455868B (zh) * 2010-02-04 2014-10-11 Univ Nat Sun Yat Sen 排列奈米粒子於基板上之系統
GB201005601D0 (en) 2010-04-01 2010-05-19 Nanoco Technologies Ltd Ecapsulated nanoparticles
EP2626367A1 (de) * 2012-02-10 2013-08-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Verfahren zur Herstellung von dreidimensional Actin Struktur und Verwendung davon
JP5989442B2 (ja) * 2012-07-30 2016-09-07 京セラ株式会社 量子ドット粒子およびその製造方法、ならびに太陽電池
JP6919243B2 (ja) * 2016-03-17 2021-08-18 味の素株式会社 複合体ナノ粒子の製造方法
KR102225790B1 (ko) * 2016-07-08 2021-03-11 나가세 상교오 가부시키가이샤 금속 내포 바구니형 단백질의 제조 방법
US20220344606A1 (en) * 2019-10-02 2022-10-27 Sharp Kabushiki Kaisha Display device and method of manufacturing display device
WO2021064909A1 (ja) * 2019-10-02 2021-04-08 シャープ株式会社 表示装置、および表示装置の製造方法

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EP0881691B1 (de) 1997-05-30 2004-09-01 Matsushita Electric Industrial Co., Ltd. Anordnung mit Quanten-Schachteln
ATE536550T1 (de) * 2000-10-06 2011-12-15 Life Technologies Corp Halbleiter nanokristalle enthaltende transfektibare mizellen
US7147687B2 (en) * 2001-05-25 2006-12-12 Nanosphere, Inc. Non-alloying core shell nanoparticles

Also Published As

Publication number Publication date
EP1514838A4 (de) 2008-06-25
AU2003241813A1 (en) 2003-12-12
EP1514838B1 (de) 2009-07-22
EP1514838A1 (de) 2005-03-16
WO2003099708A1 (fr) 2003-12-04
JPWO2003099708A1 (ja) 2005-09-22
US7129058B2 (en) 2006-10-31
JP3683265B2 (ja) 2005-08-17
US20040110347A1 (en) 2004-06-10

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Legal Events

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