DE60328492D1 - Verfahren zur erzeugung von nanoteilchen - Google Patents

Verfahren zur erzeugung von nanoteilchen

Info

Publication number
DE60328492D1
DE60328492D1 DE60328492T DE60328492T DE60328492D1 DE 60328492 D1 DE60328492 D1 DE 60328492D1 DE 60328492 T DE60328492 T DE 60328492T DE 60328492 T DE60328492 T DE 60328492T DE 60328492 D1 DE60328492 D1 DE 60328492D1
Authority
DE
Germany
Prior art keywords
nanoteiles
producing
producing nanoteiles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60328492T
Other languages
English (en)
Inventor
Ichiro Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Application granted granted Critical
Publication of DE60328492D1 publication Critical patent/DE60328492D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54—Organic compounds
    • C30B29/58—Macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
DE60328492T 2002-05-28 2003-05-28 Verfahren zur erzeugung von nanoteilchen Expired - Lifetime DE60328492D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002154778 2002-05-28
PCT/JP2003/006637 WO2003099708A1 (fr) 2002-05-28 2003-05-28 Procede de production de nanoparticules et nanoparticules produites selon ce procede

Publications (1)

Publication Number Publication Date
DE60328492D1 true DE60328492D1 (de) 2009-09-03

Family

ID=29561382

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60328492T Expired - Lifetime DE60328492D1 (de) 2002-05-28 2003-05-28 Verfahren zur erzeugung von nanoteilchen

Country Status (6)

Country Link
US (1) US7129058B2 (de)
EP (1) EP1514838B1 (de)
JP (1) JP3683265B2 (de)
AU (1) AU2003241813A1 (de)
DE (1) DE60328492D1 (de)
WO (1) WO2003099708A1 (de)

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GB0409877D0 (en) 2004-04-30 2004-06-09 Univ Manchester Preparation of nanoparticle materials
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US7776758B2 (en) * 2004-06-08 2010-08-17 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7968273B2 (en) 2004-06-08 2011-06-28 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US8709892B2 (en) * 2005-05-23 2014-04-29 Darpa Nanoparticles in a flash memory using chaperonin proteins
WO2006132050A1 (ja) 2005-06-07 2006-12-14 Matsushita Electric Industrial Co., Ltd. 酸化亜鉛－タンパク質複合体の製造方法
KR100756320B1 (ko) * 2005-06-29 2007-09-07 한국화학연구원 단백질 나노입자를 이용한 탄소나노튜브 트랜지스터 및이의 제조 방법
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7989290B2 (en) 2005-08-04 2011-08-02 Micron Technology, Inc. Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge traps
US7575978B2 (en) 2005-08-04 2009-08-18 Micron Technology, Inc. Method for making conductive nanoparticle charge storage element
GB2429838B (en) 2005-08-12 2011-03-09 Nanoco Technologies Ltd Nanoparticles
JP5071854B2 (ja) * 2005-09-12 2012-11-14 独立行政法人科学技術振興機構 微粒子−タンパク質複合体およびその作製方法、半導体装置、蛍光標識方法
GB0522027D0 (en) 2005-10-28 2005-12-07 Nanoco Technologies Ltd Controlled preparation of nanoparticle materials
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US20090075926A1 (en) * 2006-12-06 2009-03-19 Bamdad Cynthia C Method for identifying and manipulating cells
JP4149504B2 (ja) * 2006-12-07 2008-09-10 松下電器産業株式会社 フェリチンを基板上に二次元配列させる方法
JP5306604B2 (ja) * 2007-02-28 2013-10-02 富士通株式会社 二値半導体記憶装置
WO2008118410A2 (en) * 2007-03-23 2008-10-02 The Trustees Of Columbia University In The City Of New York Quantum dot labeled stem cells for use in providing pacemaker function
US8563348B2 (en) * 2007-04-18 2013-10-22 Nanoco Technologies Ltd. Fabrication of electrically active films based on multiple layers
US20080264479A1 (en) 2007-04-25 2008-10-30 Nanoco Technologies Limited Hybrid Photovoltaic Cells and Related Methods
US8367506B2 (en) 2007-06-04 2013-02-05 Micron Technology, Inc. High-k dielectrics with gold nano-particles
CN101096687B (zh) * 2007-07-11 2012-08-29 武汉大学 一种利用微生物细胞制备硒化镉量子点的方法
CN101815774B (zh) * 2007-09-28 2014-03-12 纳米技术有限公司 核壳纳米粒子及其制备方法
US8784701B2 (en) 2007-11-30 2014-07-22 Nanoco Technologies Ltd. Preparation of nanoparticle material
KR101735575B1 (ko) 2008-02-25 2017-05-15 나노코 테크놀로지스 리미티드 반도체 나노입자 캐핑물질
GB0813273D0 (en) 2008-07-19 2008-08-27 Nanoco Technologies Ltd Method for producing aqueous compatible nanoparticles
GB0814458D0 (en) 2008-08-07 2008-09-10 Nanoco Technologies Ltd Surface functionalised nanoparticles
KR20170110740A (ko) 2008-10-09 2017-10-11 미네르바 바이오테크놀로지 코포레이션 세포내에서 다능성을 유도하기 위한 방법
GB0820101D0 (en) 2008-11-04 2008-12-10 Nanoco Technologies Ltd Surface functionalised nanoparticles
GB0821122D0 (en) 2008-11-19 2008-12-24 Nanoco Technologies Ltd Semiconductor nanoparticle - based light emitting devices and associated materials and methods
GB0901857D0 (en) * 2009-02-05 2009-03-11 Nanoco Technologies Ltd Encapsulated nanoparticles
WO2010144887A1 (en) * 2009-06-11 2010-12-16 Minerva Biotechnologies Corporation Methods for culturing stem and progenitor cells
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WO2011062791A2 (en) * 2009-11-17 2011-05-26 3M Innovative Properties Company Texturing surface of light-absorbing substrate
TWI455868B (zh) * 2010-02-04 2014-10-11 Univ Nat Sun Yat Sen 排列奈米粒子於基板上之系統
US8808558B2 (en) * 2010-02-04 2014-08-19 National Sun Yat-Sen University System and method for alignment of nanoparticles on substrate
GB201005601D0 (en) 2010-04-01 2010-05-19 Nanoco Technologies Ltd Ecapsulated nanoparticles
EP2626367A1 (de) * 2012-02-10 2013-08-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Verfahren zur Herstellung von dreidimensional Actin Struktur und Verwendung davon
JP5989442B2 (ja) * 2012-07-30 2016-09-07 京セラ株式会社 量子ドット粒子およびその製造方法、ならびに太陽電池
JP6919243B2 (ja) * 2016-03-17 2021-08-18 味の素株式会社 複合体ナノ粒子の製造方法
JP6757408B2 (ja) 2016-07-08 2020-09-16 長瀬産業株式会社 金属内包かご状タンパク質の製造方法
US20220344606A1 (en) * 2019-10-02 2022-10-27 Sharp Kabushiki Kaisha Display device and method of manufacturing display device
WO2021064909A1 (ja) * 2019-10-02 2021-04-08 シャープ株式会社 表示装置、および表示装置の製造方法

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EP1154493A3 (de) * 1997-05-30 2003-10-15 Matsushita Electric Industrial Co., Ltd. Lichtemittierende Halbleiteranordnung mit Quantenpunkten
DE60137953D1 (de) * 2000-10-06 2009-04-23 Life Technologies Corp Zellen mit spektraler signatur sowie verfahren zu ihrer herstellung und nutzung
US7147687B2 (en) * 2001-05-25 2006-12-12 Nanosphere, Inc. Non-alloying core shell nanoparticles

Also Published As

Publication number Publication date
US7129058B2 (en) 2006-10-31
AU2003241813A1 (en) 2003-12-12
EP1514838B1 (de) 2009-07-22
WO2003099708A1 (fr) 2003-12-04
EP1514838A4 (de) 2008-06-25
JP3683265B2 (ja) 2005-08-17
EP1514838A1 (de) 2005-03-16
JPWO2003099708A1 (ja) 2005-09-22
US20040110347A1 (en) 2004-06-10

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