DE60326200D1 - Leiterplatte und ihr Herstellungsverfahren - Google Patents

Leiterplatte und ihr Herstellungsverfahren

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Publication number
DE60326200D1
DE60326200D1 DE60326200T DE60326200T DE60326200D1 DE 60326200 D1 DE60326200 D1 DE 60326200D1 DE 60326200 T DE60326200 T DE 60326200T DE 60326200 T DE60326200 T DE 60326200T DE 60326200 D1 DE60326200 D1 DE 60326200D1
Authority
DE
Germany
Prior art keywords
circuit board
printed circuit
manufacturing process
printed
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60326200T
Other languages
English (en)
Inventor
Mutsumi Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DE60326200D1 publication Critical patent/DE60326200D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • H05K3/20Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
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    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4611Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4614Manufacturing multilayer circuits by laminating two or more circuit boards the electrical connections between the circuit boards being made during lamination
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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    • Y10T29/49002Electrical device making
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49126Assembling bases
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49128Assembling formed circuit to base
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155Manufacturing circuit on or in base
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Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4411598B2 (ja) * 2004-09-30 2010-02-10 セイコーエプソン株式会社 転写元基板及び半導体装置の製造方法
JP2006196712A (ja) * 2005-01-13 2006-07-27 Toshiba Corp 薄膜素子の製造方法
JP4692268B2 (ja) * 2005-12-22 2011-06-01 パナソニック株式会社 電子部品実装システムおよび電子部品実装方法
JP2008003577A (ja) * 2006-05-25 2008-01-10 Canon Inc 画像表示装置の製造方法および分断方法
US20080122119A1 (en) * 2006-08-31 2008-05-29 Avery Dennison Corporation Method and apparatus for creating rfid devices using masking techniques
KR100867924B1 (ko) * 2007-03-07 2008-11-10 삼성에스디아이 주식회사 도너기판, 그의 제조방법 및 유기전계발광소자
US7807520B2 (en) * 2007-06-29 2010-10-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8034663B2 (en) 2008-09-24 2011-10-11 Eastman Kodak Company Low cost die release wafer
US20100072490A1 (en) * 2008-09-24 2010-03-25 Kerr Roger S Low cost flexible display sheet
JP5390832B2 (ja) * 2008-11-04 2014-01-15 キヤノン株式会社 機能性領域の移設方法、ledアレイ、ledプリンタヘッド、及びledプリンタ
US8279145B2 (en) * 2009-02-17 2012-10-02 Global Oled Technology Llc Chiplet driver pairs for two-dimensional display
JP5258666B2 (ja) * 2009-04-22 2013-08-07 株式会社半導体エネルギー研究所 発光装置の作製方法および成膜用基板
US9209059B2 (en) * 2009-12-17 2015-12-08 Cooledge Lighting, Inc. Method and eletrostatic transfer stamp for transferring semiconductor dice using electrostatic transfer printing techniques
US20110151114A1 (en) * 2009-12-18 2011-06-23 Cooledge Lighting, Inc. Composite patterning device and method for removing elements from host substrate by establishing conformal contact between device and a contact surface
US11325828B2 (en) * 2013-02-22 2022-05-10 Vibrant Composites Inc. High-volume millimeter scale manufacturing
CN110047760A (zh) 2013-12-02 2019-07-23 株式会社半导体能源研究所 显示装置及其制造方法
CN110379715A (zh) * 2014-08-26 2019-10-25 株式会社尼康 转印基板
CN106158848B (zh) * 2015-04-07 2019-03-22 群创光电股份有限公司 显示面板
WO2016183844A1 (en) * 2015-05-21 2016-11-24 Goertek.Inc Transferring method, manufacturing method, device and electronic apparatus of micro-led
WO2017008251A1 (en) * 2015-07-14 2017-01-19 Goertek. Inc Assembling method, manufacturing method, device and electronic apparatus of flip-die
US10586817B2 (en) 2016-03-24 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and separation apparatus
JP2017207744A (ja) 2016-05-11 2017-11-24 株式会社半導体エネルギー研究所 表示装置、モジュール、及び電子機器
KR20230106750A (ko) 2016-07-29 2023-07-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 표시 모듈, 및 전자 기기
KR102638304B1 (ko) * 2016-08-02 2024-02-20 삼성디스플레이 주식회사 표시장치
TW201808628A (zh) 2016-08-09 2018-03-16 Semiconductor Energy Lab 半導體裝置的製造方法
DE102016124646A1 (de) 2016-12-16 2018-06-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements
KR102448482B1 (ko) * 2017-12-29 2022-09-27 엘지디스플레이 주식회사 마이크로 칩을 포함하는 표시장치
CN108807265B (zh) * 2018-07-09 2020-01-31 厦门乾照光电股份有限公司 Micro-LED巨量转移方法、显示装置及制作方法
CN113540156A (zh) * 2020-04-15 2021-10-22 深圳市柔宇科技有限公司 显示面板及其制备方法、电子装置
CN112967987B (zh) * 2020-10-30 2022-03-01 重庆康佳光电技术研究院有限公司 芯片转移基板和芯片转移方法
CN113257978A (zh) * 2021-05-12 2021-08-13 华南理工大学 芯片转移装置和芯片转移方法
CN113257979A (zh) * 2021-05-12 2021-08-13 华南理工大学 芯片转移基板、芯片转移装置和芯片转移方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8402654D0 (en) * 1984-02-01 1984-03-07 Secr Defence Flatpanel display
JP2833111B2 (ja) * 1989-03-09 1998-12-09 日立化成工業株式会社 回路の接続方法及びそれに用いる接着剤フィルム
DE4032397A1 (de) * 1990-10-12 1992-04-16 Bosch Gmbh Robert Verfahren zur herstellung einer hybriden halbleiterstruktur und nach dem verfahren hergestellte halbleiterstruktur
US5250843A (en) * 1991-03-27 1993-10-05 Integrated System Assemblies Corp. Multichip integrated circuit modules
WO1992017901A1 (en) * 1991-03-27 1992-10-15 Integrated System Assemblies Corporation Multichip integrated circuit module and method of fabrication
US5384691A (en) * 1993-01-08 1995-01-24 General Electric Company High density interconnect multi-chip modules including embedded distributed power supply elements
TW406207B (en) * 1994-09-30 2000-09-21 Nippon Electric Co A method to manufacture an anisotropic conductive film used in liquid crystal display means and a method to meanufacture a liquid crystal panel
US20020004320A1 (en) * 1995-05-26 2002-01-10 David V. Pedersen Attaratus for socketably receiving interconnection elements of an electronic component
US5566448A (en) * 1995-06-06 1996-10-22 International Business Machines Corporation Method of construction for multi-tiered cavities used in laminate carriers
JPH1041349A (ja) * 1996-07-24 1998-02-13 Hitachi Chem Co Ltd 回路板
JP4619462B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
JP2000323534A (ja) * 1999-05-13 2000-11-24 Sony Corp 半導体素子の実装構造及び実装方法
JP3447619B2 (ja) * 1999-06-25 2003-09-16 株式会社東芝 アクティブマトリクス基板の製造方法、中間転写基板
WO2001015228A1 (fr) * 1999-08-19 2001-03-01 Seiko Epson Corporation Panneau de cablage, procede de fabrication d'un panneau de cablage, dispositif semiconducteur, procede de fabrication d'un dispositif semiconducteur, carte a circuit imprime et appareil electronique
JP2001168339A (ja) * 1999-12-08 2001-06-22 Sharp Corp 表示用トランジスタアレイパネルの形成方法
JP3906653B2 (ja) 2000-07-18 2007-04-18 ソニー株式会社 画像表示装置及びその製造方法
JP4655368B2 (ja) 2000-12-12 2011-03-23 日本電気株式会社 移動体端末
JP2002244576A (ja) * 2001-02-21 2002-08-30 Sony Corp 表示装置の製造方法、表示装置及び液晶表示装置
JP3994681B2 (ja) 2001-04-11 2007-10-24 ソニー株式会社 素子の配列方法及び画像表示装置の製造方法
JP3890921B2 (ja) 2001-06-05 2007-03-07 ソニー株式会社 素子の配列方法及び画像表示装置の製造方法
JP2002314123A (ja) 2001-04-18 2002-10-25 Sony Corp 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
JP3608615B2 (ja) 2001-04-19 2005-01-12 ソニー株式会社 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
JP2002343944A (ja) 2001-05-14 2002-11-29 Sony Corp 電子部品の転写方法及び素子の配列方法、画像表示装置の製造方法

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US7726013B2 (en) 2010-06-01
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