DE60312961D1 - Multi-level speicherzelle - Google Patents

Multi-level speicherzelle

Info

Publication number
DE60312961D1
DE60312961D1 DE60312961T DE60312961T DE60312961D1 DE 60312961 D1 DE60312961 D1 DE 60312961D1 DE 60312961 T DE60312961 T DE 60312961T DE 60312961 T DE60312961 T DE 60312961T DE 60312961 D1 DE60312961 D1 DE 60312961D1
Authority
DE
Germany
Prior art keywords
memory cell
layer
electrode layers
electrode
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60312961T
Other languages
English (en)
Other versions
DE60312961T2 (de
Inventor
Terry L Gilton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE60312961D1 publication Critical patent/DE60312961D1/de
Publication of DE60312961T2 publication Critical patent/DE60312961T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Data Exchanges In Wide-Area Networks (AREA)
  • Static Random-Access Memory (AREA)
DE60312961T 2002-02-20 2003-02-05 Multi-level speicherzelle Expired - Lifetime DE60312961T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US81594 1979-10-03
US10/081,594 US6809362B2 (en) 2002-02-20 2002-02-20 Multiple data state memory cell
PCT/US2003/003226 WO2003073428A1 (en) 2002-02-20 2003-02-05 Multiple data state memory cell

Publications (2)

Publication Number Publication Date
DE60312961D1 true DE60312961D1 (de) 2007-05-16
DE60312961T2 DE60312961T2 (de) 2007-12-13

Family

ID=27733281

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60312961T Expired - Lifetime DE60312961T2 (de) 2002-02-20 2003-02-05 Multi-level speicherzelle

Country Status (10)

Country Link
US (4) US6809362B2 (de)
EP (1) EP1476876B1 (de)
JP (1) JP2005518671A (de)
KR (1) KR100635366B1 (de)
CN (2) CN100449644C (de)
AT (1) ATE358876T1 (de)
AU (1) AU2003212907A1 (de)
DE (1) DE60312961T2 (de)
TW (1) TW587347B (de)
WO (1) WO2003073428A1 (de)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6864521B2 (en) * 2002-08-29 2005-03-08 Micron Technology, Inc. Method to control silver concentration in a resistance variable memory element
US7227170B2 (en) * 2003-03-10 2007-06-05 Energy Conversion Devices, Inc. Multiple bit chalcogenide storage device
US7471552B2 (en) * 2003-08-04 2008-12-30 Ovonyx, Inc. Analog phase change memory
US7381611B2 (en) * 2003-08-04 2008-06-03 Intel Corporation Multilayered phase change memory
US7529123B2 (en) * 2003-09-08 2009-05-05 Ovonyx, Inc. Method of operating a multi-terminal electronic device
JP4608875B2 (ja) * 2003-12-03 2011-01-12 ソニー株式会社 記憶装置
US7326950B2 (en) 2004-07-19 2008-02-05 Micron Technology, Inc. Memory device with switching glass layer
US7190048B2 (en) 2004-07-19 2007-03-13 Micron Technology, Inc. Resistance variable memory device and method of fabrication
WO2006132813A1 (en) * 2004-07-19 2006-12-14 Micron Technology, Inc. Memory device with switching glass layer
US20060045974A1 (en) * 2004-08-25 2006-03-02 Campbell Kristy A Wet chemical method to form silver-rich silver-selenide
EP1643508B1 (de) * 2004-10-01 2013-05-22 International Business Machines Corporation Nichtflüchtiges Speicherelement mit programmierbarem Widerstand
JP2006108645A (ja) * 2004-10-08 2006-04-20 Ind Technol Res Inst マルチレベル相変化メモリ、及びその動作方法並びに製造方法
TWI254443B (en) * 2004-10-08 2006-05-01 Ind Tech Res Inst Multilevel phase-change memory, manufacture method and status transferring method thereof
DE102004052645A1 (de) * 2004-10-29 2006-05-04 Infineon Technologies Ag Speicherzelle und Verfahren zu deren Herstellung
US7138290B2 (en) * 2004-12-03 2006-11-21 Micron Technology, Inc. Methods of depositing silver onto a metal selenide-comprising surface and methods of depositing silver onto a selenium-comprising surface
US8193606B2 (en) * 2005-02-28 2012-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a memory element
KR100657956B1 (ko) * 2005-04-06 2006-12-14 삼성전자주식회사 다치 저항체 메모리 소자와 그 제조 및 동작 방법
US7427770B2 (en) * 2005-04-22 2008-09-23 Micron Technology, Inc. Memory array for increased bit density
US20070009821A1 (en) * 2005-07-08 2007-01-11 Charlotte Cutler Devices containing multi-bit data
US20080042119A1 (en) * 2005-08-09 2008-02-21 Ovonyx, Inc. Multi-layered chalcogenide and related devices having enhanced operational characteristics
US7723712B2 (en) * 2006-03-17 2010-05-25 Micron Technology, Inc. Reduced power consumption phase change memory and methods for forming the same
US20080037324A1 (en) * 2006-08-14 2008-02-14 Geoffrey Wen-Tai Shuy Electrical thin film memory
US7560723B2 (en) 2006-08-29 2009-07-14 Micron Technology, Inc. Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
US7479671B2 (en) * 2006-08-29 2009-01-20 International Business Machines Corporation Thin film phase change memory cell formed on silicon-on-insulator substrate
US20080152792A1 (en) * 2006-12-21 2008-06-26 Motorola, Inc. Method of manufacturing a bistable microelectronic switch stack
US7705707B2 (en) * 2006-12-21 2010-04-27 Motorola, Inc. Bistable microelectronic switch stack
US20080165569A1 (en) * 2007-01-04 2008-07-10 Chieh-Fang Chen Resistance Limited Phase Change Memory Material
KR100810617B1 (ko) 2007-02-09 2008-03-06 삼성전자주식회사 멀티 비트 상전이 메모리소자 및 그 제조방법
KR20080088776A (ko) * 2007-03-30 2008-10-06 삼성전자주식회사 비휘발성 기억 장치의 스토리지 및 그 형성 방법
KR100941514B1 (ko) 2007-04-06 2010-02-12 삼성전자주식회사 멀티 비트 상전이 메모리소자 및 그 제조방법
US7813158B2 (en) * 2007-05-14 2010-10-12 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Recordable electrical memory
DE102007032865A1 (de) * 2007-07-13 2009-01-15 Qimonda Ag Integrierte Schaltung, Verfahren zum Betreiben einer integrierten Schaltung, Speicherzellenarray sowie Speichermodul
KR101390340B1 (ko) * 2007-09-11 2014-05-07 삼성전자주식회사 다중 레벨 메모리 장치 및 그 동작 방법
US20090135640A1 (en) * 2007-11-28 2009-05-28 International Business Machines Corporation Electromigration-programmable semiconductor device with bidirectional resistance change
US7977722B2 (en) * 2008-05-20 2011-07-12 Seagate Technology Llc Non-volatile memory with programmable capacitance
US7786463B2 (en) * 2008-05-20 2010-08-31 Seagate Technology Llc Non-volatile multi-bit memory with programmable capacitance
US8742387B2 (en) * 2008-06-25 2014-06-03 Qimonda Ag Resistive memory devices with improved resistive changing elements
US7825479B2 (en) 2008-08-06 2010-11-02 International Business Machines Corporation Electrical antifuse having a multi-thickness dielectric layer
US8487291B2 (en) 2009-01-30 2013-07-16 Seagate Technology Llc Programmable metallization memory cell with layered solid electrolyte structure
US8331168B2 (en) 2009-04-30 2012-12-11 International Business Machines Corporation Increased capacity heterogeneous storage elements
US8134139B2 (en) * 2010-01-25 2012-03-13 Macronix International Co., Ltd. Programmable metallization cell with ion buffer layer
JP2011204744A (ja) * 2010-03-24 2011-10-13 Toshiba Corp 半導体記憶装置
US8828788B2 (en) * 2010-05-11 2014-09-09 Micron Technology, Inc. Forming electrodes for chalcogenide containing devices
US8520425B2 (en) 2010-06-18 2013-08-27 Sandisk 3D Llc Resistive random access memory with low current operation
US8724369B2 (en) 2010-06-18 2014-05-13 Sandisk 3D Llc Composition of memory cell with resistance-switching layers
US8395927B2 (en) * 2010-06-18 2013-03-12 Sandisk 3D Llc Memory cell with resistance-switching layers including breakdown layer
JP5364739B2 (ja) * 2011-02-18 2013-12-11 株式会社東芝 不揮発性抵抗変化素子
JP2012199336A (ja) * 2011-03-18 2012-10-18 Sony Corp 記憶素子および記憶装置
JP5687978B2 (ja) * 2011-09-14 2015-03-25 ルネサスエレクトロニクス株式会社 抵抗変化型不揮発記憶装置、半導体装置及び抵抗変化型不揮発記憶装置の動作方法
CN102306705A (zh) 2011-09-16 2012-01-04 北京大学 一种大容量多值阻变存储器
CN103078053A (zh) * 2012-12-21 2013-05-01 北京大学 一种多值阻变存储器及其制备方法
US9416949B2 (en) * 2013-01-25 2016-08-16 Field Controls, Llc Adjustable bracket assembly for an ultraviolet lamp
US20160005965A1 (en) * 2014-07-01 2016-01-07 Micron Technology, Inc. Memory cells having a first selecting chalcogenide material and a second selecting chalcogenide material and methods therof
US9406881B1 (en) 2015-04-24 2016-08-02 Micron Technology, Inc. Memory cells having a heater electrode formed between a first storage material and a second storage material and methods of forming the same
US10008665B1 (en) * 2016-12-27 2018-06-26 Intel Corporation Doping of selector and storage materials of a memory cell
US11444125B2 (en) * 2020-06-17 2022-09-13 Globalfoundries Singapore Pte. Ltd. Memory devices and methods of forming memory devices

Family Cites Families (193)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US47772A (en) * 1865-05-16 Improvement in grain-separators
US32254A (en) * 1861-05-07 Improvement in methods of distillation
US190289A (en) * 1877-05-01 Improvement in sewing-machine shuttles
US160551A (en) * 1875-03-09 Improvement in revolving fire-arfvls
US47773A (en) * 1865-05-16 Chakles k
US38301A (en) * 1863-04-28 Improved alloys of aluminum
US137869A (en) * 1873-04-15 Improvement in stilts
US47765A (en) * 1865-05-16 Improved metallic thill-holder
US3271591A (en) 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3622319A (en) 1966-10-20 1971-11-23 Western Electric Co Nonreflecting photomasks and methods of making same
US3868651A (en) 1970-08-13 1975-02-25 Energy Conversion Devices Inc Method and apparatus for storing and reading data in a memory having catalytic material to initiate amorphous to crystalline change in memory structure
US3743847A (en) 1971-06-01 1973-07-03 Motorola Inc Amorphous silicon film as a uv filter
US4267261A (en) 1971-07-15 1981-05-12 Energy Conversion Devices, Inc. Method for full format imaging
US3961314A (en) 1974-03-05 1976-06-01 Energy Conversion Devices, Inc. Structure and method for producing an image
US3966317A (en) 1974-04-08 1976-06-29 Energy Conversion Devices, Inc. Dry process production of archival microform records from hard copy
US4177474A (en) 1977-05-18 1979-12-04 Energy Conversion Devices, Inc. High temperature amorphous semiconductor member and method of making the same
US4269395A (en) * 1978-07-23 1981-05-26 Newman James L Portable hydraulic rig for performing workover, drilling and other operations on a well
JPS5565365A (en) 1978-11-07 1980-05-16 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method
DE2901303C2 (de) 1979-01-15 1984-04-19 Max Planck Gesellschaft Zur Foerderung Der Wissenschaften E.V., 3400 Goettingen Festes Ionenleitermaterial, seine Verwendung und Verfahren zu dessen Herstellung
US4312938A (en) 1979-07-06 1982-01-26 Drexler Technology Corporation Method for making a broadband reflective laser recording and data storage medium with absorptive underlayer
US4269935A (en) 1979-07-13 1981-05-26 Ionomet Company, Inc. Process of doping silver image in chalcogenide layer
US4316946A (en) 1979-12-03 1982-02-23 Ionomet Company, Inc. Surface sensitized chalcogenide product and process for making and using the same
US4499557A (en) 1980-10-28 1985-02-12 Energy Conversion Devices, Inc. Programmable cell for use in programmable electronic arrays
US4405710A (en) 1981-06-22 1983-09-20 Cornell Research Foundation, Inc. Ion beam exposure of (g-Gex -Se1-x) inorganic resists
US4737379A (en) 1982-09-24 1988-04-12 Energy Conversion Devices, Inc. Plasma deposited coatings, and low temperature plasma method of making same
US4545111A (en) 1983-01-18 1985-10-08 Energy Conversion Devices, Inc. Method for making, parallel preprogramming or field programming of electronic matrix arrays
US4608296A (en) 1983-12-06 1986-08-26 Energy Conversion Devices, Inc. Superconducting films and devices exhibiting AC to DC conversion
US4795657A (en) 1984-04-13 1989-01-03 Energy Conversion Devices, Inc. Method of fabricating a programmable array
US4670763A (en) 1984-05-14 1987-06-02 Energy Conversion Devices, Inc. Thin film field effect transistor
US4673957A (en) 1984-05-14 1987-06-16 Energy Conversion Devices, Inc. Integrated circuit compatible thin film field effect transistor and method of making same
US4668968A (en) 1984-05-14 1987-05-26 Energy Conversion Devices, Inc. Integrated circuit compatible thin film field effect transistor and method of making same
US4769338A (en) 1984-05-14 1988-09-06 Energy Conversion Devices, Inc. Thin film field effect transistor and method of making same
US4843443A (en) 1984-05-14 1989-06-27 Energy Conversion Devices, Inc. Thin film field effect transistor and method of making same
US4678679A (en) 1984-06-25 1987-07-07 Energy Conversion Devices, Inc. Continuous deposition of activated process gases
US4646266A (en) 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
US4664939A (en) 1985-04-01 1987-05-12 Energy Conversion Devices, Inc. Vertical semiconductor processor
US4637895A (en) 1985-04-01 1987-01-20 Energy Conversion Devices, Inc. Gas mixtures for the vapor deposition of semiconductor material
US4710899A (en) 1985-06-10 1987-12-01 Energy Conversion Devices, Inc. Data storage medium incorporating a transition metal for increased switching speed
US4671618A (en) 1986-05-22 1987-06-09 Wu Bao Gang Liquid crystalline-plastic material having submillisecond switch times and extended memory
US4766471A (en) 1986-01-23 1988-08-23 Energy Conversion Devices, Inc. Thin film electro-optical devices
US4818717A (en) 1986-06-27 1989-04-04 Energy Conversion Devices, Inc. Method for making electronic matrix arrays
US4728406A (en) 1986-08-18 1988-03-01 Energy Conversion Devices, Inc. Method for plasma - coating a semiconductor body
US4845533A (en) 1986-08-22 1989-07-04 Energy Conversion Devices, Inc. Thin film electrical devices with amorphous carbon electrodes and method of making same
US4809044A (en) 1986-08-22 1989-02-28 Energy Conversion Devices, Inc. Thin film overvoltage protection devices
US4788594A (en) 1986-10-15 1988-11-29 Energy Conversion Devices, Inc. Solid state electronic camera including thin film matrix of photosensors
US4853785A (en) 1986-10-15 1989-08-01 Energy Conversion Devices, Inc. Electronic camera including electronic signal storage cartridge
US4847674A (en) 1987-03-10 1989-07-11 Advanced Micro Devices, Inc. High speed interconnect system with refractory non-dogbone contacts and an active electromigration suppression mechanism
US4800526A (en) 1987-05-08 1989-01-24 Gaf Corporation Memory element for information storage and retrieval system and associated process
US4775425A (en) 1987-07-27 1988-10-04 Energy Conversion Devices, Inc. P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same
US4891330A (en) 1987-07-27 1990-01-02 Energy Conversion Devices, Inc. Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements
US5272359A (en) 1988-04-07 1993-12-21 California Institute Of Technology Reversible non-volatile switch based on a TCNQ charge transfer complex
GB8910854D0 (en) 1989-05-11 1989-06-28 British Petroleum Co Plc Semiconductor device
US5159661A (en) 1990-10-05 1992-10-27 Energy Conversion Devices, Inc. Vertically interconnected parallel distributed processor
US5314772A (en) 1990-10-09 1994-05-24 Arizona Board Of Regents High resolution, multi-layer resist for microlithography and method therefor
JPH0770731B2 (ja) 1990-11-22 1995-07-31 松下電器産業株式会社 電気可塑性素子
US5414271A (en) 1991-01-18 1995-05-09 Energy Conversion Devices, Inc. Electrically erasable memory elements having improved set resistance stability
US5296716A (en) 1991-01-18 1994-03-22 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5536947A (en) 1991-01-18 1996-07-16 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom
US5166758A (en) 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
US5534711A (en) 1991-01-18 1996-07-09 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5534712A (en) 1991-01-18 1996-07-09 Energy Conversion Devices, Inc. Electrically erasable memory elements characterized by reduced current and improved thermal stability
US5335219A (en) 1991-01-18 1994-08-02 Ovshinsky Stanford R Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements
US5341328A (en) 1991-01-18 1994-08-23 Energy Conversion Devices, Inc. Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life
US5596522A (en) 1991-01-18 1997-01-21 Energy Conversion Devices, Inc. Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements
US5406509A (en) 1991-01-18 1995-04-11 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5128099A (en) 1991-02-15 1992-07-07 Energy Conversion Devices, Inc. Congruent state changeable optical memory material and device
US5219788A (en) 1991-02-25 1993-06-15 Ibm Corporation Bilayer metallization cap for photolithography
US5177567A (en) 1991-07-19 1993-01-05 Energy Conversion Devices, Inc. Thin-film structure for chalcogenide electrical switching devices and process therefor
US5359205A (en) 1991-11-07 1994-10-25 Energy Conversion Devices, Inc. Electrically erasable memory elements characterized by reduced current and improved thermal stability
US5238862A (en) 1992-03-18 1993-08-24 Micron Technology, Inc. Method of forming a stacked capacitor with striated electrode
US5512328A (en) 1992-08-07 1996-04-30 Hitachi, Ltd. Method for forming a pattern and forming a thin film used in pattern formation
US5350484A (en) 1992-09-08 1994-09-27 Intel Corporation Method for the anisotropic etching of metal films in the fabrication of interconnects
EP0617312B1 (de) * 1993-03-26 2002-10-02 Matsushita Electric Industrial Co., Ltd. Räumlicher Lichtmodulator und Ansteuerungsverfahren
US5818749A (en) 1993-08-20 1998-10-06 Micron Technology, Inc. Integrated circuit memory device
BE1007902A3 (nl) 1993-12-23 1995-11-14 Philips Electronics Nv Schakelelement met geheugen voorzien van schottky tunnelbarriere.
DE4408330A1 (de) 1994-03-11 1995-09-14 Cherry Mikroschalter Gmbh Ergonomische Tastatur
US5500532A (en) 1994-08-18 1996-03-19 Arizona Board Of Regents Personal electronic dosimeter
JP2643870B2 (ja) 1994-11-29 1997-08-20 日本電気株式会社 半導体記憶装置の製造方法
US5543737A (en) 1995-02-10 1996-08-06 Energy Conversion Devices, Inc. Logical operation circuit employing two-terminal chalcogenide switches
US5879955A (en) 1995-06-07 1999-03-09 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
JP3363154B2 (ja) 1995-06-07 2003-01-08 ミクロン テクノロジー、インコーポレイテッド 不揮発性メモリセル内のマルチステート材料と共に使用するスタック／トレンチダイオード
US6420725B1 (en) 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
US5789758A (en) 1995-06-07 1998-08-04 Micron Technology, Inc. Chalcogenide memory cell with a plurality of chalcogenide electrodes
US5751012A (en) 1995-06-07 1998-05-12 Micron Technology, Inc. Polysilicon pillar diode for use in a non-volatile memory cell
US5869843A (en) 1995-06-07 1999-02-09 Micron Technology, Inc. Memory array having a multi-state element and method for forming such array or cells thereof
US5714768A (en) 1995-10-24 1998-02-03 Energy Conversion Devices, Inc. Second-layer phase change memory array on top of a logic device
US5694054A (en) 1995-11-28 1997-12-02 Energy Conversion Devices, Inc. Integrated drivers for flat panel displays employing chalcogenide logic elements
US5591501A (en) 1995-12-20 1997-01-07 Energy Conversion Devices, Inc. Optical recording medium having a plurality of discrete phase change data recording points
US6653733B1 (en) 1996-02-23 2003-11-25 Micron Technology, Inc. Conductors in semiconductor devices
US5687112A (en) 1996-04-19 1997-11-11 Energy Conversion Devices, Inc. Multibit single cell memory element having tapered contact
US5852870A (en) 1996-04-24 1998-12-29 Amkor Technology, Inc. Method of making grid array assembly
US5851882A (en) 1996-05-06 1998-12-22 Micron Technology, Inc. ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask
US5761115A (en) 1996-05-30 1998-06-02 Axon Technologies Corporation Programmable metallization cell structure and method of making same
US5789277A (en) 1996-07-22 1998-08-04 Micron Technology, Inc. Method of making chalogenide memory device
US5814527A (en) 1996-07-22 1998-09-29 Micron Technology, Inc. Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories
US5998244A (en) 1996-08-22 1999-12-07 Micron Technology, Inc. Memory cell incorporating a chalcogenide element and method of making same
US6147395A (en) 1996-10-02 2000-11-14 Micron Technology, Inc. Method for fabricating a small area of contact between electrodes
US5825046A (en) 1996-10-28 1998-10-20 Energy Conversion Devices, Inc. Composite memory material comprising a mixture of phase-change memory material and dielectric material
US6087674A (en) 1996-10-28 2000-07-11 Energy Conversion Devices, Inc. Memory element with memory material comprising phase-change material and dielectric material
US5846889A (en) 1997-03-14 1998-12-08 The United States Of America As Represented By The Secretary Of The Navy Infrared transparent selenide glasses
US5998066A (en) 1997-05-16 1999-12-07 Aerial Imaging Corporation Gray scale mask and depth pattern transfer technique using inorganic chalcogenide glass
US6031287A (en) * 1997-06-18 2000-02-29 Micron Technology, Inc. Contact structure and memory element incorporating the same
US5933365A (en) 1997-06-19 1999-08-03 Energy Conversion Devices, Inc. Memory element with energy control mechanism
US6005527A (en) 1997-07-10 1999-12-21 Andrew Corporation RF coupler for concealed mobile telecommunications systems utilizing window-mounted antennas and systems using same
US6051511A (en) 1997-07-31 2000-04-18 Micron Technology, Inc. Method and apparatus for reducing isolation stress in integrated circuits
NO309500B1 (no) * 1997-08-15 2001-02-05 Thin Film Electronics Asa Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme
GB9722149D0 (en) * 1997-10-22 1997-12-17 Philips Electronics Nv Semiconductior memory devices
KR100371102B1 (ko) 1997-12-04 2003-02-06 엑손 테크놀로지스 코포레이션 프로그램형 표면하 군집 금속화 구조체 및 그 제조 방법
US6011757A (en) 1998-01-27 2000-01-04 Ovshinsky; Stanford R. Optical recording media having increased erasability
US6297170B1 (en) 1998-06-23 2001-10-02 Vlsi Technology, Inc. Sacrificial multilayer anti-reflective coating for mos gate formation
US5912839A (en) 1998-06-23 1999-06-15 Energy Conversion Devices, Inc. Universal memory element and method of programming same
US6141241A (en) 1998-06-23 2000-10-31 Energy Conversion Devices, Inc. Universal memory element with systems employing same and apparatus and method for reading, writing and programming same
US6388324B2 (en) 1998-08-31 2002-05-14 Arizona Board Of Regents Self-repairing interconnections for electrical circuits
US6469364B1 (en) 1998-08-31 2002-10-22 Arizona Board Of Regents Programmable interconnection system for electrical circuits
US6034882A (en) * 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6825489B2 (en) 2001-04-06 2004-11-30 Axon Technologies Corporation Microelectronic device, structure, and system, including a memory structure having a variable programmable property and method of forming the same
US6985378B2 (en) 1998-12-04 2006-01-10 Axon Technologies Corporation Programmable microelectronic device, structure, and system and method of forming the same
US6635914B2 (en) 2000-09-08 2003-10-21 Axon Technologies Corp. Microelectronic programmable device and methods of forming and programming the same
US6487106B1 (en) 1999-01-12 2002-11-26 Arizona Board Of Regents Programmable microelectronic devices and method of forming and programming same
US6177338B1 (en) 1999-02-08 2001-01-23 Taiwan Semiconductor Manufacturing Company Two step barrier process
JP2002536840A (ja) * 1999-02-11 2002-10-29 アリゾナ ボード オブ リージェンツ プログラマブルマイクロエレクトロニックデバイスおよびその形成およびプログラミング方法
US6072716A (en) 1999-04-14 2000-06-06 Massachusetts Institute Of Technology Memory structures and methods of making same
US6143604A (en) 1999-06-04 2000-11-07 Taiwan Semiconductor Manufacturing Company Method for fabricating small-size two-step contacts for word-line strapping on dynamic random access memory (DRAM)
US6350679B1 (en) 1999-08-03 2002-02-26 Micron Technology, Inc. Methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry
US20030107105A1 (en) 1999-08-31 2003-06-12 Kozicki Michael N. Programmable chip-to-substrate interconnect structure and device and method of forming same
US6423628B1 (en) 1999-10-22 2002-07-23 Lsi Logic Corporation Method of forming integrated circuit structure having low dielectric constant material and having silicon oxynitride caps over closely spaced apart metal lines
JP2001189431A (ja) * 1999-12-28 2001-07-10 Seiko Epson Corp メモリのセル構造及びメモリデバイス
US6914802B2 (en) 2000-02-11 2005-07-05 Axon Technologies Corporation Microelectronic photonic structure and device and method of forming the same
US6865117B2 (en) 2000-02-11 2005-03-08 Axon Technologies Corporation Programming circuit for a programmable microelectronic device, system including the circuit, and method of forming the same
US6501111B1 (en) 2000-06-30 2002-12-31 Intel Corporation Three-dimensional (3D) programmable device
WO2002021542A1 (en) * 2000-09-08 2002-03-14 Axon Technologies Corporation Microelectronic programmable device and methods of forming and programming the same
US6555860B2 (en) 2000-09-29 2003-04-29 Intel Corporation Compositionally modified resistive electrode
US6429064B1 (en) 2000-09-29 2002-08-06 Intel Corporation Reduced contact area of sidewall conductor
US6339544B1 (en) 2000-09-29 2002-01-15 Intel Corporation Method to enhance performance of thermal resistor device
US6563164B2 (en) 2000-09-29 2003-05-13 Ovonyx, Inc. Compositionally modified resistive electrode
US6404665B1 (en) 2000-09-29 2002-06-11 Intel Corporation Compositionally modified resistive electrode
US6567293B1 (en) 2000-09-29 2003-05-20 Ovonyx, Inc. Single level metal memory cell using chalcogenide cladding
US6653193B2 (en) * 2000-12-08 2003-11-25 Micron Technology, Inc. Resistance variable device
US6649928B2 (en) 2000-12-13 2003-11-18 Intel Corporation Method to selectively remove one side of a conductive bottom electrode of a phase-change memory cell and structure obtained thereby
US6696355B2 (en) 2000-12-14 2004-02-24 Ovonyx, Inc. Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory
US6437383B1 (en) 2000-12-21 2002-08-20 Intel Corporation Dual trench isolation for a phase-change memory cell and method of making same
US6569705B2 (en) 2000-12-21 2003-05-27 Intel Corporation Metal structure for a phase-change memory device
US6646297B2 (en) 2000-12-26 2003-11-11 Ovonyx, Inc. Lower electrode isolation in a double-wide trench
US6534781B2 (en) 2000-12-26 2003-03-18 Ovonyx, Inc. Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact
US6531373B2 (en) 2000-12-27 2003-03-11 Ovonyx, Inc. Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elements
US6687427B2 (en) 2000-12-29 2004-02-03 Intel Corporation Optic switch
US6638820B2 (en) 2001-02-08 2003-10-28 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices
JP3884266B2 (ja) * 2001-02-19 2007-02-21 株式会社東芝 半導体メモリ装置及びその製造方法
US6727192B2 (en) 2001-03-01 2004-04-27 Micron Technology, Inc. Methods of metal doping a chalcogenide material
US6348365B1 (en) 2001-03-02 2002-02-19 Micron Technology, Inc. PCRAM cell manufacturing
US6818481B2 (en) 2001-03-07 2004-11-16 Micron Technology, Inc. Method to manufacture a buried electrode PCRAM cell
US6734455B2 (en) * 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US6473332B1 (en) 2001-04-04 2002-10-29 The University Of Houston System Electrically variable multi-state resistance computing
WO2002082452A2 (en) * 2001-04-06 2002-10-17 Axon Technologies Corporation Microelectronic device, structure, and system, including a memory structure having a variable programmable property and method of forming the same
JP4886160B2 (ja) 2001-05-07 2012-02-29 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド セルフアセンブリによるポリマーフィルムを用いた記憶装置およびその製造方法
US6480438B1 (en) 2001-06-12 2002-11-12 Ovonyx, Inc. Providing equal cell programming conditions across a large and high density array of phase-change memory cells
US6613604B2 (en) 2001-08-02 2003-09-02 Ovonyx, Inc. Method for making small pore for use in programmable resistance memory element
US6589714B2 (en) 2001-06-26 2003-07-08 Ovonyx, Inc. Method for making programmable resistance memory element using silylated photoresist
US6487113B1 (en) 2001-06-29 2002-11-26 Ovonyx, Inc. Programming a phase-change memory with slow quench time
US6462984B1 (en) 2001-06-29 2002-10-08 Intel Corporation Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory array
US6570784B2 (en) 2001-06-29 2003-05-27 Ovonyx, Inc. Programming a phase-change material memory
US6642102B2 (en) 2001-06-30 2003-11-04 Intel Corporation Barrier material encapsulation of programmable material
US6511867B2 (en) 2001-06-30 2003-01-28 Ovonyx, Inc. Utilizing atomic layer deposition for programmable device
US6605527B2 (en) 2001-06-30 2003-08-12 Intel Corporation Reduced area intersection between electrode and programming element
US6514805B2 (en) 2001-06-30 2003-02-04 Intel Corporation Trench sidewall profile for device isolation
US6673700B2 (en) 2001-06-30 2004-01-06 Ovonyx, Inc. Reduced area intersection between electrode and programming element
US6511862B2 (en) 2001-06-30 2003-01-28 Ovonyx, Inc. Modified contact for programmable devices
US6951805B2 (en) 2001-08-01 2005-10-04 Micron Technology, Inc. Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry
US6590807B2 (en) 2001-08-02 2003-07-08 Intel Corporation Method for reading a structural phase-change memory
US6737312B2 (en) * 2001-08-27 2004-05-18 Micron Technology, Inc. Method of fabricating dual PCRAM cells sharing a common electrode
US6881623B2 (en) * 2001-08-29 2005-04-19 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device
US6784018B2 (en) * 2001-08-29 2004-08-31 Micron Technology, Inc. Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry
US6955940B2 (en) * 2001-08-29 2005-10-18 Micron Technology, Inc. Method of forming chalcogenide comprising devices
US6646902B2 (en) * 2001-08-30 2003-11-11 Micron Technology, Inc. Method of retaining memory state in a programmable conductor RAM
US20030047765A1 (en) * 2001-08-30 2003-03-13 Campbell Kristy A. Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
US6709958B2 (en) * 2001-08-30 2004-03-23 Micron Technology, Inc. Integrated circuit device and fabrication using metal-doped chalcogenide materials
US6507061B1 (en) 2001-08-31 2003-01-14 Intel Corporation Multiple layer phase-change memory
WO2003021589A1 (en) 2001-09-01 2003-03-13 Energy Conversion Devices, Inc. Increased data storage in optical data storage and retrieval systems using blue lasers and/or plasmon lenses
US6586761B2 (en) 2001-09-07 2003-07-01 Intel Corporation Phase change material memory device
US6545287B2 (en) * 2001-09-07 2003-04-08 Intel Corporation Using selective deposition to form phase-change memory cells
US6690026B2 (en) 2001-09-28 2004-02-10 Intel Corporation Method of fabricating a three-dimensional array of active media
US6566700B2 (en) 2001-10-11 2003-05-20 Ovonyx, Inc. Carbon-containing interfacial layer for phase-change memory
AU2002340314A1 (en) 2001-10-26 2003-05-06 Axon Technologies Corp. Tunable cantilever apparatus and method for making same
US6545907B1 (en) 2001-10-30 2003-04-08 Ovonyx, Inc. Technique and apparatus for performing write operations to a phase change material memory device
US6576921B2 (en) 2001-11-08 2003-06-10 Intel Corporation Isolating phase change material memory cells
US6815818B2 (en) * 2001-11-19 2004-11-09 Micron Technology, Inc. Electrode structure for use in an integrated circuit
US6791859B2 (en) * 2001-11-20 2004-09-14 Micron Technology, Inc. Complementary bit PCRAM sense amplifier and method of operation
US6625054B2 (en) 2001-12-28 2003-09-23 Intel Corporation Method and apparatus to program a phase change memory
US6667900B2 (en) 2001-12-28 2003-12-23 Ovonyx, Inc. Method and apparatus to operate a memory cell
US6512241B1 (en) 2001-12-31 2003-01-28 Intel Corporation Phase change material memory device
WO2003079463A2 (en) 2002-03-15 2003-09-25 Axon Technologies Corporation Programmable structure, an array including the structure, and methods of forming the same
US6671710B2 (en) 2002-05-10 2003-12-30 Energy Conversion Devices, Inc. Methods of computing with digital multistate phase change materials
US6918382B2 (en) 2002-08-26 2005-07-19 Energy Conversion Devices, Inc. Hydrogen powered scooter

Also Published As

Publication number Publication date
JP2005518671A (ja) 2005-06-23
CN101414659B (zh) 2010-11-03
EP1476876A1 (de) 2004-11-17
CN101414659A (zh) 2009-04-22
US20050157567A1 (en) 2005-07-21
US6908808B2 (en) 2005-06-21
WO2003073428A1 (en) 2003-09-04
US20070128792A1 (en) 2007-06-07
ATE358876T1 (de) 2007-04-15
US7498231B2 (en) 2009-03-03
TW587347B (en) 2004-05-11
CN100449644C (zh) 2009-01-07
DE60312961T2 (de) 2007-12-13
KR20040083457A (ko) 2004-10-01
CN1647209A (zh) 2005-07-27
US20030156452A1 (en) 2003-08-21
US7202520B2 (en) 2007-04-10
TW200304235A (en) 2003-09-16
AU2003212907A1 (en) 2003-09-09
US20040223357A1 (en) 2004-11-11
KR100635366B1 (ko) 2006-10-17
EP1476876B1 (de) 2007-04-04
US6809362B2 (en) 2004-10-26

Similar Documents

Publication Publication Date Title
DE60312961D1 (de) Multi-level speicherzelle
TW200735331A (en) Electrically rewritable non-volatile memory element and method of manufacturing the same
TW200943488A (en) Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
ATE525750T1 (de) Nichtflüchtiger speicher
TW200733102A (en) Non-volatile memory element and method of manufacturing the same
DE602006016864D1 (de) Vertikale phasenwechsel-speicherzelle und herstellungsverfahren dafür
TW200737502A (en) Phase-change memory device and methods of fabricating the same
TW200802806A (en) Semiconductor device and manufacturing method thereof
ATE472157T1 (de) Nichtflüchtiger programmierbarer speicher
TW200701222A (en) Thin film fuse phase change ram and manufacturing method
WO2003079443A3 (en) Manufacturing methods for resistance variable material cells
WO2006052846A3 (en) Programmable matrix array with chalcogenide material
TW200719437A (en) Method of manufacturing a pipe shaped phase change memory
EP1265286A3 (de) Integrierte Schaltkreisstruktur
GB0522685D0 (en) Cross-point nonvolatile memory device using binary metal oxide layer as data storage material layer and methods of fabricating the same
WO2003094170A3 (en) Layout for thermally selected cross-point mram cell
TW200711120A (en) Phase change memory with reduced programming current
ATE547814T1 (de) Phasenänderungsstromdichte-steuerstruktur
TW200516759A (en) Damascene conductive line for contacting an underlying memory element
TW200723508A (en) Phase-change memory device and method of manufacturing same
EP1265287A3 (de) Nichtflüchtiger Speicher
TW200625604A (en) Phase change memory and fabricating method thereof
TW200735282A (en) Phase-change memory device and method of manufacturing same
WO2002029902A1 (fr) Dispositif de stockage de semi-conducteur non volatil et son procede de production
TW200503183A (en) Planar polymer memory device

Legal Events

Date Code Title Description
8364 No opposition during term of opposition