DE60239031D1 - Kristalline Dünnschicht und Verfahren zu deren Herstellung, Dünnfilmelement, Dünnfilmschaltkreis und Vorrichtung unter Verwendung des Elements oder Schaltkreises - Google Patents
Kristalline Dünnschicht und Verfahren zu deren Herstellung, Dünnfilmelement, Dünnfilmschaltkreis und Vorrichtung unter Verwendung des Elements oder SchaltkreisesInfo
- Publication number
- DE60239031D1 DE60239031D1 DE60239031T DE60239031T DE60239031D1 DE 60239031 D1 DE60239031 D1 DE 60239031D1 DE 60239031 T DE60239031 T DE 60239031T DE 60239031 T DE60239031 T DE 60239031T DE 60239031 D1 DE60239031 D1 DE 60239031D1
- Authority
- DE
- Germany
- Prior art keywords
- thin film
- circuit
- making
- same
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
- C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Optics & Photonics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Recrystallisation Techniques (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001164350 | 2001-05-31 | ||
JP2002148604A JP4310076B2 (ja) | 2001-05-31 | 2002-05-23 | 結晶性薄膜の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60239031D1 true DE60239031D1 (de) | 2011-03-10 |
Family
ID=26616069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60239031T Expired - Lifetime DE60239031D1 (de) | 2001-05-31 | 2002-05-31 | Kristalline Dünnschicht und Verfahren zu deren Herstellung, Dünnfilmelement, Dünnfilmschaltkreis und Vorrichtung unter Verwendung des Elements oder Schaltkreises |
Country Status (6)
Country | Link |
---|---|
US (1) | US7115487B2 (de) |
EP (1) | EP1262578B1 (de) |
JP (1) | JP4310076B2 (de) |
KR (1) | KR100541486B1 (de) |
CN (1) | CN1390986A (de) |
DE (1) | DE60239031D1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100493156B1 (ko) * | 2002-06-05 | 2005-06-03 | 삼성전자주식회사 | 나노입자를 이용한 비정질 실리콘의 결정화 방법 |
AU2003283833A1 (en) * | 2002-11-27 | 2004-06-18 | Canon Kabushiki Kaisha | Producing method for crystalline thin film |
JP2005005410A (ja) * | 2003-06-11 | 2005-01-06 | Canon Inc | 結晶性薄膜及びその製造方法、該結晶性薄膜を用いた素子、該素子を用いて構成した回路、並びに該素子もしくは該回路を含む装置 |
AU2003286430A1 (en) * | 2002-12-10 | 2004-06-30 | Canon Kabushiki Kaisha | Process for producing crystalline thin film |
KR100501700B1 (ko) * | 2002-12-16 | 2005-07-18 | 삼성에스디아이 주식회사 | 엘디디/오프셋 구조를 구비하고 있는 박막 트랜지스터 |
JP4867135B2 (ja) * | 2004-03-31 | 2012-02-01 | 大日本印刷株式会社 | 有機半導体構造物の製造方法 |
JP5041255B2 (ja) * | 2007-04-18 | 2012-10-03 | 三菱電機株式会社 | 半導体薄膜の製造方法 |
JP5444342B2 (ja) * | 2008-07-18 | 2014-03-19 | パナソニック株式会社 | 半導体デバイスおよびチャネル形成方法 |
KR20140054465A (ko) * | 2010-09-15 | 2014-05-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 표시 장치 |
US20130081882A1 (en) * | 2011-09-30 | 2013-04-04 | Diamond Innovations, Inc. | Method of characterizing a material using three dimensional reconstruction of spatially referenced characteristics and use of such information |
US11024736B2 (en) * | 2019-08-09 | 2021-06-01 | Micron Technology, Inc. | Transistor and methods of forming integrated circuitry |
EP4010930A4 (de) | 2019-08-09 | 2023-03-01 | Micron Technology, Inc. | Transistor und verfahren zur herstellung von transistoren |
US10964811B2 (en) * | 2019-08-09 | 2021-03-30 | Micron Technology, Inc. | Transistor and methods of forming transistors |
US11637175B2 (en) | 2020-12-09 | 2023-04-25 | Micron Technology, Inc. | Vertical transistors |
Family Cites Families (93)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4564403A (en) | 1984-01-27 | 1986-01-14 | Sony Corporation Research Center | Single-crystal semiconductor devices and method for making them |
GB2183090B (en) * | 1985-10-07 | 1989-09-13 | Canon Kk | Method for selective formation of deposited film |
JPH0782996B2 (ja) * | 1986-03-28 | 1995-09-06 | キヤノン株式会社 | 結晶の形成方法 |
US5324536A (en) * | 1986-04-28 | 1994-06-28 | Canon Kabushiki Kaisha | Method of forming a multilayered structure |
JPH0812906B2 (ja) * | 1986-07-11 | 1996-02-07 | キヤノン株式会社 | 光電変換装置の製造方法 |
JPH0812905B2 (ja) * | 1986-07-11 | 1996-02-07 | キヤノン株式会社 | 光電変換装置及びその製造方法 |
JP2505754B2 (ja) * | 1986-07-11 | 1996-06-12 | キヤノン株式会社 | 光電変換装置の製造方法 |
JP2505767B2 (ja) * | 1986-09-18 | 1996-06-12 | キヤノン株式会社 | 光電変換装置の製造方法 |
JPH07120753B2 (ja) * | 1986-09-18 | 1995-12-20 | キヤノン株式会社 | 半導体メモリ装置及びその製造方法 |
JP2516604B2 (ja) * | 1986-10-17 | 1996-07-24 | キヤノン株式会社 | 相補性mos集積回路装置の製造方法 |
JPH0828470B2 (ja) * | 1986-11-07 | 1996-03-21 | キヤノン株式会社 | 半導体メモリ装置 |
US5155058A (en) * | 1986-11-07 | 1992-10-13 | Canon Kabushiki Kaisha | Method of making semiconductor memory device |
JPS63119218A (ja) * | 1986-11-07 | 1988-05-23 | Canon Inc | 半導体基材とその製造方法 |
US5269876A (en) * | 1987-01-26 | 1993-12-14 | Canon Kabushiki Kaisha | Process for producing crystal article |
JP2596547B2 (ja) * | 1987-01-26 | 1997-04-02 | キヤノン株式会社 | 太陽電池及びその製造方法 |
US5236546A (en) * | 1987-01-26 | 1993-08-17 | Canon Kabushiki Kaisha | Process for producing crystal article |
US5201681A (en) * | 1987-02-06 | 1993-04-13 | Canon Kabushiki Kaisha | Method of emitting electrons |
US5176557A (en) * | 1987-02-06 | 1993-01-05 | Canon Kabushiki Kaisha | Electron emission element and method of manufacturing the same |
EP0281335A3 (de) * | 1987-02-28 | 1988-11-09 | Canon Kabushiki Kaisha | Verfahren zur Herstellung eines Gegenstandes aus Halbleitermaterial |
JP2651146B2 (ja) * | 1987-03-02 | 1997-09-10 | キヤノン株式会社 | 結晶の製造方法 |
US5334864A (en) * | 1987-03-26 | 1994-08-02 | Canon Kabushiki Kaisha | Process for selective formation of II-VI group compound film |
JPS63237517A (ja) * | 1987-03-26 | 1988-10-04 | Canon Inc | 3−5族化合物膜の選択形成方法 |
JPS63237533A (ja) * | 1987-03-26 | 1988-10-04 | Canon Inc | 2−6族化合物膜の選択形成方法 |
CA1332039C (en) * | 1987-03-26 | 1994-09-20 | Takao Yonehara | Ii - vi group compound crystal article and process for producing the same |
US5281283A (en) * | 1987-03-26 | 1994-01-25 | Canon Kabushiki Kaisha | Group III-V compound crystal article using selective epitaxial growth |
CA1321121C (en) * | 1987-03-27 | 1993-08-10 | Hiroyuki Tokunaga | Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same |
US5254211A (en) * | 1987-03-27 | 1993-10-19 | Canon Kabushiki Kaisha | Method for forming crystals |
US5304820A (en) * | 1987-03-27 | 1994-04-19 | Canon Kabushiki Kaisha | Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same |
US5363799A (en) * | 1987-08-08 | 1994-11-15 | Canon Kabushiki Kaisha | Method for growth of crystal |
AU623861B2 (en) * | 1987-08-08 | 1992-05-28 | Canon Kabushiki Kaisha | Crystal article, method for producing the same and semiconductor device utilizing the same |
AU609508B2 (en) * | 1987-08-20 | 1991-05-02 | Canon Kabushiki Kaisha | Photosensor device |
EP0307109A1 (de) * | 1987-08-24 | 1989-03-15 | Canon Kabushiki Kaisha | Verfahren zur Herstellung eines Halbleiterkristalls und dabei hergestellter Halbleiterkristall |
EP0305144A3 (de) * | 1987-08-24 | 1989-03-08 | Canon Kabushiki Kaisha | Verfahren zur Herstellung einer Vebindungshalbleiterkristallschicht |
AU623863B2 (en) * | 1987-08-24 | 1992-05-28 | Canon Kabushiki Kaisha | Method of forming crystals |
US5296087A (en) * | 1987-08-24 | 1994-03-22 | Canon Kabushiki Kaisha | Crystal formation method |
US5255258A (en) * | 1987-09-24 | 1993-10-19 | Canon Kabushiki Kaisha | Microprobe, preparation thereof and electronic device by use of said microprobe |
US5994698A (en) * | 1987-09-24 | 1999-11-30 | Canon Kabushiki Kaisha | Microprobe, preparation thereof and electronic device by use of said microprobe |
EP0309236B1 (de) * | 1987-09-24 | 1994-07-06 | Canon Kabushiki Kaisha | Mikrosonde, deren Herstellung und elektronisches Gerät, das diese Mikrosonde gebraucht |
JP2670453B2 (ja) * | 1988-03-27 | 1997-10-29 | キヤノン株式会社 | 結晶の形成方法 |
JP2603342B2 (ja) * | 1988-10-02 | 1997-04-23 | キヤノン株式会社 | 結晶物品及びその形成方法 |
US5190613A (en) * | 1988-10-02 | 1993-03-02 | Canon Kabushiki Kaisha | Method for forming crystals |
JP2660064B2 (ja) * | 1988-10-02 | 1997-10-08 | キヤノン株式会社 | 結晶物品及びその形成方法 |
JP2746301B2 (ja) * | 1988-10-20 | 1998-05-06 | キヤノン株式会社 | 半導体整流素子 |
US5290712A (en) * | 1989-03-31 | 1994-03-01 | Canon Kabushiki Kaisha | Process for forming crystalline semiconductor film |
EP0390608B1 (de) * | 1989-03-31 | 1999-06-09 | Canon Kabushiki Kaisha | Verfahren zur Herstellung einer Halbleiterdünnschicht und damit hergestellte Halbleiterdünnschicht |
JP2858434B2 (ja) * | 1989-03-31 | 1999-02-17 | キヤノン株式会社 | 結晶の形成方法および結晶物品 |
US5070116A (en) * | 1989-06-02 | 1991-12-03 | Massachusetts Institute Of Technology | Preceramic organosilicon-metal carbonyl polymers |
US5098850A (en) * | 1989-06-16 | 1992-03-24 | Canon Kabushiki Kaisha | Process for producing substrate for selective crystal growth, selective crystal growth process and process for producing solar battery by use of them |
US5094697A (en) * | 1989-06-16 | 1992-03-10 | Canon Kabushiki Kaisha | Photovoltaic device and method for producing the same |
JPH03215391A (ja) * | 1989-06-26 | 1991-09-20 | Canon Inc | 結晶の成長方法 |
US5278092A (en) * | 1989-08-07 | 1994-01-11 | Canon Kabushiki Kaisha | Method of forming crystal semiconductor film |
JPH03278463A (ja) * | 1990-03-27 | 1991-12-10 | Canon Inc | ショットキーダイオードの形成方法 |
US5207863A (en) * | 1990-04-06 | 1993-05-04 | Canon Kabushiki Kaisha | Crystal growth method and crystalline article obtained by said method |
US5363793A (en) * | 1990-04-06 | 1994-11-15 | Canon Kabushiki Kaisha | Method for forming crystals |
JPH0492413A (ja) * | 1990-08-08 | 1992-03-25 | Canon Inc | 結晶薄膜の成長方法 |
DE69127952T2 (de) * | 1990-11-07 | 1998-03-05 | Canon Kk | III-V Verbindungs-Halbleiter-Vorrichtung, Drucker- und Anzeigevorrichtung unter Verwendung derselben, und Verfahren zur Herstellung dieser Vorrichtung |
DE69126949T2 (de) * | 1990-11-15 | 1998-02-12 | Canon Kk | Verfahren zur Herstellung einer einkristallinen Schicht |
JP2900588B2 (ja) * | 1990-11-16 | 1999-06-02 | キヤノン株式会社 | 結晶物品の形成方法 |
JP2744350B2 (ja) * | 1990-11-22 | 1998-04-28 | キヤノン株式会社 | 半導体基板およびその製造方法 |
JP2753153B2 (ja) * | 1991-04-15 | 1998-05-18 | キヤノン株式会社 | 発光素子 |
EP0510587B1 (de) * | 1991-04-22 | 1997-03-12 | Canon Kabushiki Kaisha | Lichtemittierende Vorrichtung unter Verwendung von polykristallinem Halbleitermaterial und Herstellungsverfahren dafür |
JPH0531957A (ja) * | 1991-05-23 | 1993-02-09 | Canon Inc | 発光装置、これを用いた光書き込みプリンターヘツド並びに該光書き込みプリンターヘツドによる光プリンター装置 |
JPH05102035A (ja) | 1991-10-04 | 1993-04-23 | Sony Corp | 半導体結晶の成長方法 |
US5373803A (en) * | 1991-10-04 | 1994-12-20 | Sony Corporation | Method of epitaxial growth of semiconductor |
JP3352118B2 (ja) * | 1992-08-25 | 2002-12-03 | キヤノン株式会社 | 半導体装置及びその製造方法 |
JPH06177034A (ja) * | 1992-12-03 | 1994-06-24 | Sony Corp | 半導体単結晶の成長方法 |
JPH06263595A (ja) * | 1993-03-10 | 1994-09-20 | Canon Inc | ダイヤモンド被覆部材及びその製造方法 |
JPH06267846A (ja) * | 1993-03-10 | 1994-09-22 | Canon Inc | ダイヤモンド電子装置およびその製造法 |
KR100299292B1 (ko) * | 1993-11-02 | 2001-12-01 | 이데이 노부유끼 | 다결정실리콘박막형성방법및그표면처리장치 |
US5496768A (en) | 1993-12-03 | 1996-03-05 | Casio Computer Co., Ltd. | Method of manufacturing polycrystalline silicon thin film |
JP3221473B2 (ja) * | 1994-02-03 | 2001-10-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3067949B2 (ja) | 1994-06-15 | 2000-07-24 | シャープ株式会社 | 電子装置および液晶表示装置 |
US5541523A (en) * | 1994-09-19 | 1996-07-30 | Ford Motor Company | System for detecting operability of an airbag squib resistor |
KR0145897B1 (ko) | 1995-01-20 | 1998-09-15 | 김광호 | 폴리 박막트랜지스터 액정 디스플레이 소자의 패드부 및 그 제조방법 |
US6555449B1 (en) * | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
JP3204986B2 (ja) * | 1996-05-28 | 2001-09-04 | ザ トラスティース オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 基板上の半導体膜領域の結晶化処理及びこの方法により製造されたデバイス |
US6326286B1 (en) | 1998-06-09 | 2001-12-04 | Lg. Philips Lcd Co., Ltd. | Method for crystallizing amorphous silicon layer |
US6322626B1 (en) * | 1999-06-08 | 2001-11-27 | Micron Technology, Inc. | Apparatus for controlling a temperature of a microelectronics substrate |
KR100327087B1 (ko) * | 1999-06-28 | 2002-03-13 | 구본준, 론 위라하디락사 | 레이저 어닐링 방법 |
JP4272778B2 (ja) | 1999-11-04 | 2009-06-03 | キヤノン株式会社 | 結晶薄膜の製造方法 |
US6368945B1 (en) * | 2000-03-16 | 2002-04-09 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification |
US6334864B1 (en) * | 2000-05-17 | 2002-01-01 | Aga Medical Corp. | Alignment member for delivering a non-symmetric device with a predefined orientation |
US6737672B2 (en) * | 2000-08-25 | 2004-05-18 | Fujitsu Limited | Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus |
JP4384850B2 (ja) * | 2000-12-27 | 2009-12-16 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 情報を記録する方法及び装置 |
US6692999B2 (en) * | 2001-06-26 | 2004-02-17 | Fujitsu Limited | Polysilicon film forming method |
JP4784955B2 (ja) * | 2001-07-18 | 2011-10-05 | 株式会社 液晶先端技術開発センター | 薄膜半導体装置の製造方法 |
WO2003010804A1 (en) * | 2001-07-25 | 2003-02-06 | Seiko Epson Corporation | Method of producing semiconductor thin film, method of producing semiconductor device, semiconductor device, integrated circuit, electrooptical device and electronic apparatus |
JP4558262B2 (ja) * | 2001-08-30 | 2010-10-06 | シャープ株式会社 | 半導体装置の製造方法 |
JP2003124230A (ja) * | 2001-10-12 | 2003-04-25 | Hitachi Ltd | 薄膜トランジスタ装置、その製造方法及びこの装置を用いた画像表示装置 |
JP2003168645A (ja) * | 2001-12-03 | 2003-06-13 | Hitachi Ltd | 半導体薄膜装置、その製造方法及び画像表示装置 |
JP2003179068A (ja) * | 2001-12-12 | 2003-06-27 | Hitachi Ltd | 画像表示装置およびその製造方法 |
JP2003197526A (ja) * | 2001-12-28 | 2003-07-11 | Seiko Epson Corp | 半導体装置の製造方法、半導体装置、表示装置、および電子機器 |
AU2002335883A1 (en) * | 2002-02-06 | 2003-09-02 | Parker Hannifin Corporation | Thermal management materials having a phase change dispersion |
-
2002
- 2002-05-23 JP JP2002148604A patent/JP4310076B2/ja not_active Expired - Fee Related
- 2002-05-29 US US10/156,124 patent/US7115487B2/en not_active Expired - Fee Related
- 2002-05-31 EP EP02012126A patent/EP1262578B1/de not_active Expired - Lifetime
- 2002-05-31 CN CN02122161A patent/CN1390986A/zh active Pending
- 2002-05-31 DE DE60239031T patent/DE60239031D1/de not_active Expired - Lifetime
- 2002-05-31 KR KR1020020030591A patent/KR100541486B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100541486B1 (ko) | 2006-01-16 |
US20030003766A1 (en) | 2003-01-02 |
JP2003059834A (ja) | 2003-02-28 |
EP1262578B1 (de) | 2011-01-26 |
JP4310076B2 (ja) | 2009-08-05 |
CN1390986A (zh) | 2003-01-15 |
KR20020092243A (ko) | 2002-12-11 |
US7115487B2 (en) | 2006-10-03 |
EP1262578A1 (de) | 2002-12-04 |
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