DE60206008D1 - Verteilter Bragg-Reflektor und Herstellungsverfahren - Google Patents

Verteilter Bragg-Reflektor und Herstellungsverfahren

Info

Publication number
DE60206008D1
DE60206008D1 DE60206008T DE60206008T DE60206008D1 DE 60206008 D1 DE60206008 D1 DE 60206008D1 DE 60206008 T DE60206008 T DE 60206008T DE 60206008 T DE60206008 T DE 60206008T DE 60206008 D1 DE60206008 D1 DE 60206008D1
Authority
DE
Germany
Prior art keywords
manufacturing process
bragg reflector
distributed bragg
distributed
reflector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60206008T
Other languages
English (en)
Other versions
DE60206008T2 (de
Inventor
Scott W Corzine
Michael Renne Ty Tan
Chao Kun Lin
Jintian Zhu
Michael H Leary
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Application granted granted Critical
Publication of DE60206008D1 publication Critical patent/DE60206008D1/de
Publication of DE60206008T2 publication Critical patent/DE60206008T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
DE60206008T 2001-12-14 2002-09-30 Verteilter Bragg-Reflektor und Herstellungsverfahren Expired - Lifetime DE60206008T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22757 2001-12-14
US10/022,757 US6947217B2 (en) 2001-12-14 2001-12-14 Distributed Bragg reflector and method of fabrication

Publications (2)

Publication Number Publication Date
DE60206008D1 true DE60206008D1 (de) 2005-10-13
DE60206008T2 DE60206008T2 (de) 2006-06-22

Family

ID=21811269

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60206008T Expired - Lifetime DE60206008T2 (de) 2001-12-14 2002-09-30 Verteilter Bragg-Reflektor und Herstellungsverfahren

Country Status (3)

Country Link
US (2) US6947217B2 (de)
EP (1) EP1320157B1 (de)
DE (1) DE60206008T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7155403B2 (en) 2001-03-22 2006-12-26 International Business Machines Corporation System and method for leveraging procurement across companies and company groups
US7573931B2 (en) * 2002-01-09 2009-08-11 Avago Technologies General Ip (Singapore) Pte. Ltd. Vertical-cavity surface-emitting laser including a supported airgap distributed bragg reflector
US6809753B2 (en) * 2002-10-25 2004-10-26 Xiang Zheng Tu Optical microswitch printer heads
DE10331586B4 (de) * 2003-07-09 2006-08-31 Universität Kassel Mikrolaser-Bauelement und Verfahren zu dessen Herstellung
US20050226283A1 (en) * 2004-04-05 2005-10-13 Lightip Technologies Inc. Single-mode semiconductor laser with integrated optical waveguide filter
US7372886B2 (en) * 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
US20060285211A1 (en) * 2005-05-04 2006-12-21 Corzine Scott W Distributed bragg reflector and method of fabrication
TWI447441B (zh) 2010-11-08 2014-08-01 Ind Tech Res Inst 紅外光阻隔多層膜結構
CN113206173A (zh) * 2021-04-20 2021-08-03 三明学院 一种GaN基DBR及其制备方法
EP4334763A1 (de) * 2021-05-03 2024-03-13 Yale University Mehrschichtstrukturen aus indiumphosphid oder galliumarsenid

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0475714B1 (de) * 1990-09-10 1995-12-27 Sharp Kabushiki Kaisha Halbleiterlaser mit verteilter Rückkopplung und Verfahren zu seiner Herstellung
US6324192B1 (en) * 1995-09-29 2001-11-27 Coretek, Inc. Electrically tunable fabry-perot structure utilizing a deformable multi-layer mirror and method of making the same
KR100413792B1 (ko) * 1997-07-24 2004-02-14 삼성전자주식회사 질화갈륨 층과 공기층이 반복 적층된 분산브래그 반사기를구비한 단파장 면발광 반도체 레이저장치 및 그 제조 방법
US6233267B1 (en) * 1998-01-21 2001-05-15 Brown University Research Foundation Blue/ultraviolet/green vertical cavity surface emitting laser employing lateral edge overgrowth (LEO) technique
JPH11307863A (ja) 1998-04-22 1999-11-05 Furukawa Electric Co Ltd:The 面発光半導体レーザ素子及びその製作方法
US6150190A (en) * 1999-05-27 2000-11-21 Motorola Inc. Method of formation of buried mirror semiconductive device
JP2000353858A (ja) 1999-06-14 2000-12-19 Nippon Telegr & Teleph Corp <Ntt> 面発光レーザとその作製方法
US6326646B1 (en) * 1999-11-24 2001-12-04 Lucent Technologies, Inc. Mounting technology for intersubband light emitters
US6751395B1 (en) * 2001-11-09 2004-06-15 Active Optical Networks, Inc. Micro-electro-mechanical variable optical attenuator

Also Published As

Publication number Publication date
EP1320157A3 (de) 2004-05-06
US7116483B2 (en) 2006-10-03
EP1320157A2 (de) 2003-06-18
US6947217B2 (en) 2005-09-20
EP1320157B1 (de) 2005-09-07
US20050219703A1 (en) 2005-10-06
US20030112517A1 (en) 2003-06-19
DE60206008T2 (de) 2006-06-22

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD.,

8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: SCHOPPE, ZIMMERMANN, STOECKELER & ZINKLER, 82049 PU

8328 Change in the person/name/address of the agent

Representative=s name: DILG HAEUSLER SCHINDELMANN PATENTANWALTSGESELLSCHA