DE602004021392D1 - Weiteres verfahren zur strukturierung eines substrats - Google Patents

Weiteres verfahren zur strukturierung eines substrats

Info

Publication number
DE602004021392D1
DE602004021392D1 DE602004021392T DE602004021392T DE602004021392D1 DE 602004021392 D1 DE602004021392 D1 DE 602004021392D1 DE 602004021392 T DE602004021392 T DE 602004021392T DE 602004021392 T DE602004021392 T DE 602004021392T DE 602004021392 D1 DE602004021392 D1 DE 602004021392D1
Authority
DE
Germany
Prior art keywords
structuring
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004021392T
Other languages
English (en)
Inventor
Jonathan Walford
Per Askebjer
Robert Eklund
Hans Fosshaug
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micronic Laser Systems AB
Original Assignee
Micronic Laser Systems AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micronic Laser Systems AB filed Critical Micronic Laser Systems AB
Publication of DE602004021392D1 publication Critical patent/DE602004021392D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
DE602004021392T 2003-08-04 2004-08-04 Weiteres verfahren zur strukturierung eines substrats Active DE602004021392D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/634,152 US7186486B2 (en) 2003-08-04 2003-08-04 Method to pattern a substrate
US55387404P 2004-03-17 2004-03-17
PCT/SE2004/001161 WO2005013007A1 (en) 2003-08-04 2004-08-04 Further method to pattern a substrate

Publications (1)

Publication Number Publication Date
DE602004021392D1 true DE602004021392D1 (de) 2009-07-16

Family

ID=34119184

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004021392T Active DE602004021392D1 (de) 2003-08-04 2004-08-04 Weiteres verfahren zur strukturierung eines substrats

Country Status (6)

Country Link
US (2) US7186486B2 (de)
EP (1) EP1652007B1 (de)
JP (1) JP2007501431A (de)
KR (1) KR20060129155A (de)
DE (1) DE602004021392D1 (de)
WO (1) WO2005013007A1 (de)

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JP6909374B2 (ja) 2016-05-13 2021-07-28 東京エレクトロン株式会社 光増感化学又は感光性化学増幅レジストを用いた限界寸法制御
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Also Published As

Publication number Publication date
US7150949B2 (en) 2006-12-19
JP2007501431A (ja) 2007-01-25
US7186486B2 (en) 2007-03-06
EP1652007A1 (de) 2006-05-03
US20050032002A1 (en) 2005-02-10
KR20060129155A (ko) 2006-12-15
US20050053850A1 (en) 2005-03-10
EP1652007B1 (de) 2009-06-03
WO2005013007A1 (en) 2005-02-10

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