DE602004005862D1 - Verfahren zum trennen einer nützlichen schicht und durch das verfahren erhaltene komponente - Google Patents
Verfahren zum trennen einer nützlichen schicht und durch das verfahren erhaltene komponenteInfo
- Publication number
- DE602004005862D1 DE602004005862D1 DE602004005862T DE602004005862T DE602004005862D1 DE 602004005862 D1 DE602004005862 D1 DE 602004005862D1 DE 602004005862 T DE602004005862 T DE 602004005862T DE 602004005862 T DE602004005862 T DE 602004005862T DE 602004005862 D1 DE602004005862 D1 DE 602004005862D1
- Authority
- DE
- Germany
- Prior art keywords
- sacrificial layer
- disconnecting
- useful layer
- component obtained
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
- B81B3/001—Structures having a reduced contact area, e.g. with bumps or with a textured surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/11—Treatments for avoiding stiction of elastic or moving parts of MEMS
- B81C2201/115—Roughening a surface
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Micromachines (AREA)
- Drying Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0308157 | 2003-07-04 | ||
FR0308157A FR2857002B1 (fr) | 2003-07-04 | 2003-07-04 | Procede de desolidarisation d'une couche utile et composant obtenu par ce procede |
PCT/FR2004/001699 WO2005012160A2 (fr) | 2003-07-04 | 2004-07-01 | Procede de desolidarisation d’une couche utile et composant obtenu par ce procede |
Publications (2)
Publication Number | Publication Date |
---|---|
DE602004005862D1 true DE602004005862D1 (de) | 2007-05-24 |
DE602004005862T2 DE602004005862T2 (de) | 2008-01-17 |
Family
ID=33522751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004005862T Active DE602004005862T2 (de) | 2003-07-04 | 2004-07-01 | Verfahren zum trennen einer nützlichen schicht und durch das verfahren erhaltene komponente |
Country Status (7)
Country | Link |
---|---|
US (1) | US7569152B2 (de) |
EP (1) | EP1641709B1 (de) |
JP (1) | JP2007525330A (de) |
AT (1) | ATE359230T1 (de) |
DE (1) | DE602004005862T2 (de) |
FR (1) | FR2857002B1 (de) |
WO (1) | WO2005012160A2 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4559273B2 (ja) * | 2005-03-30 | 2010-10-06 | シチズンファインテックミヨタ株式会社 | アクチュエータの製造方法 |
JP5178026B2 (ja) * | 2006-03-10 | 2013-04-10 | 株式会社半導体エネルギー研究所 | 微小構造体、半導体装置、及び微小構造体の作製方法 |
FR2925889B1 (fr) * | 2007-12-27 | 2010-01-29 | Commissariat Energie Atomique | Procede de realisation d'un dispositif micromecanique et/ou nanomecanique a butees anti-collage |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4783237A (en) * | 1983-12-01 | 1988-11-08 | Harry E. Aine | Solid state transducer and method of making same |
US4662746A (en) * | 1985-10-30 | 1987-05-05 | Texas Instruments Incorporated | Spatial light modulator and method |
EP0456029B1 (de) * | 1990-05-10 | 1994-12-14 | Yokogawa Electric Corporation | Druckaufnehmer mit schwingendem Element |
FR2700065B1 (fr) * | 1992-12-28 | 1995-02-10 | Commissariat Energie Atomique | Procédé de fabrication d'accéléromètres utilisant la technologie silicium sur isolant. |
FR2700003B1 (fr) * | 1992-12-28 | 1995-02-10 | Commissariat Energie Atomique | Procédé de fabrication d'un capteur de pression utilisant la technologie silicium sur isolant et capteur obtenu. |
DE4331798B4 (de) * | 1993-09-18 | 2004-08-26 | Robert Bosch Gmbh | Verfahren zur Herstellung von mikromechanischen Bauelementen |
US5914507A (en) * | 1994-05-11 | 1999-06-22 | Regents Of The University Of Minnesota | PZT microdevice |
US5489556A (en) * | 1994-06-29 | 1996-02-06 | United Microelectronics Corp. | Method for the fabrication of electrostatic microswitches |
US5619476A (en) * | 1994-10-21 | 1997-04-08 | The Board Of Trustees Of The Leland Stanford Jr. Univ. | Electrostatic ultrasonic transducer |
JP3489273B2 (ja) * | 1995-06-27 | 2004-01-19 | 株式会社デンソー | 半導体力学量センサの製造方法 |
FR2736934B1 (fr) * | 1995-07-21 | 1997-08-22 | Commissariat Energie Atomique | Procede de fabrication d'une structure avec une couche utile maintenue a distance d'un substrat par des butees, et de desolidarisation d'une telle couche |
US5771321A (en) * | 1996-01-04 | 1998-06-23 | Massachusetts Institute Of Technology | Micromechanical optical switch and flat panel display |
US5898515A (en) * | 1996-11-21 | 1999-04-27 | Eastman Kodak Company | Light reflecting micromachined cantilever |
US6181460B1 (en) * | 1998-11-18 | 2001-01-30 | Trw Inc. | Electromagnetic force controlled micromirror array |
US7083997B2 (en) * | 2000-08-03 | 2006-08-01 | Analog Devices, Inc. | Bonded wafer optical MEMS process |
US6774010B2 (en) * | 2001-01-25 | 2004-08-10 | International Business Machines Corporation | Transferable device-containing layer for silicon-on-insulator applications |
JP2002323513A (ja) * | 2001-02-23 | 2002-11-08 | Fuji Electric Co Ltd | 半導体デバイスおよびその製造方法 |
US6930364B2 (en) * | 2001-09-13 | 2005-08-16 | Silicon Light Machines Corporation | Microelectronic mechanical system and methods |
CA2473836A1 (en) * | 2002-02-14 | 2003-08-21 | Silex Microsystems Ab | Deflectable microstructure and method of manufacturing the same through bonding of wafers |
US7018877B1 (en) * | 2004-09-28 | 2006-03-28 | Palo Alto Research Center | Selective delamination of thin-films by interface adhesion energy contrasts and thin film transistor devices formed thereby |
US7410882B2 (en) * | 2004-09-28 | 2008-08-12 | Palo Alto Research Center Incorporated | Method of manufacturing and structure of polycrystalline semiconductor thin-film heterostructures on dissimilar substrates |
US7956428B2 (en) * | 2005-08-16 | 2011-06-07 | Robert Bosch Gmbh | Microelectromechanical devices and fabrication methods |
EP1760037A1 (de) * | 2005-09-06 | 2007-03-07 | Infineon Technologies SensoNor AS | Verfahren zum Herstellen von mikromechanischen Strukturen |
-
2003
- 2003-07-04 FR FR0308157A patent/FR2857002B1/fr not_active Expired - Fee Related
-
2004
- 2004-07-01 EP EP04767542A patent/EP1641709B1/de not_active Not-in-force
- 2004-07-01 US US10/562,931 patent/US7569152B2/en not_active Expired - Fee Related
- 2004-07-01 AT AT04767542T patent/ATE359230T1/de not_active IP Right Cessation
- 2004-07-01 WO PCT/FR2004/001699 patent/WO2005012160A2/fr active IP Right Grant
- 2004-07-01 JP JP2006518273A patent/JP2007525330A/ja not_active Ceased
- 2004-07-01 DE DE602004005862T patent/DE602004005862T2/de active Active
Also Published As
Publication number | Publication date |
---|---|
JP2007525330A (ja) | 2007-09-06 |
US7569152B2 (en) | 2009-08-04 |
EP1641709B1 (de) | 2007-04-11 |
WO2005012160A2 (fr) | 2005-02-10 |
DE602004005862T2 (de) | 2008-01-17 |
FR2857002B1 (fr) | 2005-10-21 |
ATE359230T1 (de) | 2007-05-15 |
FR2857002A1 (fr) | 2005-01-07 |
EP1641709A2 (de) | 2006-04-05 |
WO2005012160A3 (fr) | 2005-06-09 |
US20060144816A1 (en) | 2006-07-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |