DE60141539D1 - Verfahren zur messung von merkmalen mit einem asymmetrischen profil - Google Patents

Verfahren zur messung von merkmalen mit einem asymmetrischen profil

Info

Publication number
DE60141539D1
DE60141539D1 DE60141539T DE60141539T DE60141539D1 DE 60141539 D1 DE60141539 D1 DE 60141539D1 DE 60141539 T DE60141539 T DE 60141539T DE 60141539 T DE60141539 T DE 60141539T DE 60141539 D1 DE60141539 D1 DE 60141539D1
Authority
DE
Germany
Prior art keywords
measuring characteristics
asymmetric profile
asymmetric
profile
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60141539T
Other languages
English (en)
Inventor
Bhanwar Singh
Michael K Templeton
Bharath Rangarajan
Ramkumar Subramanian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries Inc
Original Assignee
GlobalFoundries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GlobalFoundries Inc filed Critical GlobalFoundries Inc
Application granted granted Critical
Publication of DE60141539D1 publication Critical patent/DE60141539D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
DE60141539T 2001-03-26 2001-11-13 Verfahren zur messung von merkmalen mit einem asymmetrischen profil Expired - Lifetime DE60141539D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/817,820 US6650422B2 (en) 2001-03-26 2001-03-26 Scatterometry techniques to ascertain asymmetry profile of features and generate a feedback or feedforward process control data associated therewith
PCT/US2001/043805 WO2002077570A1 (en) 2001-03-26 2001-11-13 Method to measure features with asymmetrical profile

Publications (1)

Publication Number Publication Date
DE60141539D1 true DE60141539D1 (de) 2010-04-22

Family

ID=25223953

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60141539T Expired - Lifetime DE60141539D1 (de) 2001-03-26 2001-11-13 Verfahren zur messung von merkmalen mit einem asymmetrischen profil

Country Status (8)

Country Link
US (1) US6650422B2 (de)
EP (1) EP1373828B1 (de)
JP (1) JP4070609B2 (de)
KR (2) KR100942039B1 (de)
CN (1) CN1226591C (de)
DE (1) DE60141539D1 (de)
TW (1) TW540092B (de)
WO (1) WO2002077570A1 (de)

Families Citing this family (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6643557B1 (en) 2000-06-09 2003-11-04 Advanced Micro Devices, Inc. Method and apparatus for using scatterometry to perform feedback and feed-forward control
US7196782B2 (en) * 2000-09-20 2007-03-27 Kla-Tencor Technologies Corp. Methods and systems for determining a thin film characteristic and an electrical property of a specimen
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
WO2002070985A1 (en) 2001-03-02 2002-09-12 Accent Optical Technologies, Inc. Line profile asymmetry measurement using scatterometry
US7515279B2 (en) 2001-03-02 2009-04-07 Nanometrics Incorporated Line profile asymmetry measurement
JP3647378B2 (ja) * 2001-03-02 2005-05-11 キヤノン株式会社 マルチプローブを用いた形状測定装置及び測定方法
US6650422B2 (en) * 2001-03-26 2003-11-18 Advanced Micro Devices, Inc. Scatterometry techniques to ascertain asymmetry profile of features and generate a feedback or feedforward process control data associated therewith
US6989900B1 (en) * 2001-04-02 2006-01-24 Advanced Micro Devices, Inc. Method of measuring implant profiles using scatterometric techniques
US6980300B1 (en) 2001-04-11 2005-12-27 Advanced Micro Devices, Inc. Method and apparatus for generating a polishing process endpoint signal using scatterometry
US6639663B1 (en) 2001-05-23 2003-10-28 Advanced Micro Devices, Inc. Method and apparatus for detecting processing faults using scatterometry measurements
US6677170B1 (en) 2001-05-23 2004-01-13 Advanced Micro Devices, Inc. Method for determining process layer thickness using scatterometry measurements
US6614540B1 (en) 2001-06-28 2003-09-02 Advanced Micro Devices, Inc. Method and apparatus for determining feature characteristics using scatterometry
US6804014B1 (en) 2001-07-02 2004-10-12 Advanced Micro Devices, Inc. Method and apparatus for determining contact opening dimensions using scatterometry
US7262864B1 (en) * 2001-07-02 2007-08-28 Advanced Micro Devices, Inc. Method and apparatus for determining grid dimensions using scatterometry
US6707562B1 (en) 2001-07-02 2004-03-16 Advanced Micro Devices, Inc. Method of using scatterometry measurements to control photoresist etch process
US6716646B1 (en) 2001-07-16 2004-04-06 Advanced Micro Devices, Inc. Method and apparatus for performing overlay measurements using scatterometry
DE10142317B4 (de) * 2001-08-30 2010-07-01 Advanced Micro Devices, Inc., Sunnyvale Vorrichtung zur Bestimmung eines Überlagerungsfehlers und kritischer Dimensionen in einer Halbleiterstruktur mittels Streuungsmessung
DE10142316A1 (de) * 2001-08-30 2003-04-17 Advanced Micro Devices Inc Halbleiterstruktur und Verfahren zur Bestimmung kritischer Dimensionen und Überlagerungsfehler
CN1303477C (zh) * 2001-10-10 2007-03-07 安格盛光电科技公司 利用截面分析确定聚焦中心
US6790570B1 (en) 2001-11-08 2004-09-14 Advanced Micro Devices, Inc. Method of using scatterometry measurements to control stepper process parameters
JP2003224057A (ja) * 2002-01-30 2003-08-08 Hitachi Ltd 半導体装置の製造方法
US6643008B1 (en) 2002-02-26 2003-11-04 Advanced Micro Devices, Inc. Method of detecting degradation in photolithography processes based upon scatterometric measurements of grating structures, and a device comprising such structures
US6785009B1 (en) 2002-02-28 2004-08-31 Advanced Micro Devices, Inc. Method of using high yielding spectra scatterometry measurements to control semiconductor manufacturing processes, and systems for accomplishing same
US7061627B2 (en) * 2002-03-13 2006-06-13 Therma-Wave, Inc. Optical scatterometry of asymmetric lines and structures
US6742168B1 (en) 2002-03-19 2004-05-25 Advanced Micro Devices, Inc. Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device
US6791697B1 (en) 2002-03-21 2004-09-14 Advanced Micro Devices, Inc. Scatterometry structure with embedded ring oscillator, and methods of using same
DE10224162A1 (de) 2002-05-31 2003-12-18 Advanced Micro Devices Inc Streuungsmesser mit einem internen Kalibriersystem
DE10224164B4 (de) 2002-05-31 2007-05-10 Advanced Micro Devices, Inc., Sunnyvale Eine zweidimensionale Struktur zum Bestimmen einer Überlagerungsgenauigkeit mittels Streuungsmessung
US7427521B2 (en) * 2002-10-17 2008-09-23 Timbre Technologies, Inc. Generating simulated diffraction signals for two-dimensional structures
US6881594B1 (en) 2002-10-28 2005-04-19 Advanced Micro Devices, Inc. Method of using scatterometry for analysis of electromigration, and structures for performing same
US6933158B1 (en) 2002-10-31 2005-08-23 Advanced Micro Devices, Inc. Method of monitoring anneal processes using scatterometry, and system for performing same
US6660543B1 (en) 2002-10-31 2003-12-09 Advanced Micro Devices, Inc. Method of measuring implant profiles using scatterometric techniques wherein dispersion coefficients are varied based upon depth
US7151594B2 (en) 2002-11-01 2006-12-19 Asml Netherlands B.V. Test pattern, inspection method, and device manufacturing method
EP1416328A3 (de) * 2002-11-01 2006-11-15 ASML Netherlands B.V. Inspektionsmethode und Verfahren zur Herstellung eines Artikels
US6875622B1 (en) 2002-11-01 2005-04-05 Advanced Micro Devices, Inc. Method and apparatus for determining electromagnetic properties of a process layer using scatterometry measurements
US6746882B1 (en) * 2002-11-21 2004-06-08 Advanced Micro Devices, Inc. Method of correcting non-linearity of metrology tools, and system for performing same
US7352453B2 (en) * 2003-01-17 2008-04-01 Kla-Tencor Technologies Corporation Method for process optimization and control by comparison between 2 or more measured scatterometry signals
US6836691B1 (en) 2003-05-01 2004-12-28 Advanced Micro Devices, Inc. Method and apparatus for filtering metrology data based on collection purpose
US6859746B1 (en) 2003-05-01 2005-02-22 Advanced Micro Devices, Inc. Methods of using adaptive sampling techniques based upon categorization of process variations, and system for performing same
US20040267397A1 (en) * 2003-06-27 2004-12-30 Srinivas Doddi Optical metrology of structures formed on semiconductor wafer using machine learning systems
US7405032B1 (en) * 2003-08-21 2008-07-29 Advanced Micro Devices, Inc. Combination of non-lithographic shrink techniques and trim process for gate formation and line-edge roughness reduction
CN1879004A (zh) * 2003-09-12 2006-12-13 安格盛光电科技公司 线轮廓不对称测量
US7523076B2 (en) 2004-03-01 2009-04-21 Tokyo Electron Limited Selecting a profile model for use in optical metrology using a machine learning system
US7388677B2 (en) * 2004-03-22 2008-06-17 Timbre Technologies, Inc. Optical metrology optimization for repetitive structures
US7427457B1 (en) 2004-09-03 2008-09-23 Advanced Micro Devices, Inc. Methods for designing grating structures for use in situ scatterometry to detect photoresist defects
US7052921B1 (en) 2004-09-03 2006-05-30 Advanced Micro Devices, Inc. System and method using in situ scatterometry to detect photoresist pattern integrity during the photolithography process
US7280229B2 (en) * 2004-12-03 2007-10-09 Timbre Technologies, Inc. Examining a structure formed on a semiconductor wafer using machine learning systems
US7421414B2 (en) * 2005-03-31 2008-09-02 Timbre Technologies, Inc. Split machine learning systems
US20060222975A1 (en) * 2005-04-02 2006-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated optical metrology and lithographic process track for dynamic critical dimension control
US7784183B2 (en) * 2005-06-09 2010-08-31 General Electric Company System and method for adjusting performance of manufacturing operations or steps
US7583833B2 (en) * 2006-01-27 2009-09-01 Advanced Micro Devices, Inc. Method and apparatus for manufacturing data indexing
KR101315237B1 (ko) * 2006-02-01 2013-10-07 어플라이드 머티리얼즈 이스라엘 리미티드 패턴의 파라미터에서의 변화를 평가하는 방법 및 시스템
US20070239305A1 (en) * 2006-03-28 2007-10-11 Haoren Zhuang Process control systems and methods
US7522293B2 (en) * 2006-03-30 2009-04-21 Tokyo Electron Limited Optical metrology of multiple patterned layers
DE102006037267B4 (de) * 2006-08-09 2010-12-09 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben mit hochpräzisem Kantenprofil
US7916927B2 (en) * 2007-01-16 2011-03-29 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7949618B2 (en) * 2007-03-28 2011-05-24 Tokyo Electron Limited Training a machine learning system to determine photoresist parameters
US7511835B2 (en) * 2007-04-12 2009-03-31 Tokyo Electron Limited Optical metrology using a support vector machine with simulated diffraction signal inputs
US7372583B1 (en) 2007-04-12 2008-05-13 Tokyo Electron Limited Controlling a fabrication tool using support vector machine
JP2009044125A (ja) * 2007-04-12 2009-02-26 Tokyo Electron Ltd サポートベクトルマシンを用いて制御ツールを制御する方法
US7483809B2 (en) * 2007-04-12 2009-01-27 Tokyo Electron Limited Optical metrology using support vector machine with profile parameter inputs
CN101359612B (zh) * 2007-07-30 2012-07-04 东京毅力科创株式会社 晶片图案结构的检查装置及其计量数据管理方法
CN101359611B (zh) * 2007-07-30 2011-11-09 东京毅力科创株式会社 对光学计量系统的选定变量进行优化
US8069020B2 (en) * 2007-09-19 2011-11-29 Tokyo Electron Limited Generating simulated diffraction signal using a dispersion function relating process parameter to dispersion
NL1036734A1 (nl) * 2008-04-09 2009-10-12 Asml Netherlands Bv A method of assessing a model, an inspection apparatus and a lithographic apparatus.
NL1036886A1 (nl) 2008-05-12 2009-11-16 Asml Netherlands Bv A method of measuring a target, an inspection apparatus, a scatterometer, a lithographic apparatus and a data processor.
JP5264374B2 (ja) * 2008-09-02 2013-08-14 東京エレクトロン株式会社 パターン形状検査方法及び半導体装置の製造方法
US9103664B2 (en) * 2010-04-01 2015-08-11 Tokyo Electron Limited Automated process control using an adjusted metrology output signal
US9239522B2 (en) 2010-10-08 2016-01-19 Kla-Tencor Corporation Method of determining an asymmetric property of a structure
US8577820B2 (en) * 2011-03-04 2013-11-05 Tokyo Electron Limited Accurate and fast neural network training for library-based critical dimension (CD) metrology
KR102086362B1 (ko) * 2013-03-08 2020-03-09 삼성전자주식회사 편광화된 빛을 이용하여 공정을 모니터링하는 반도체 제조 설비 및 모니터링 방법
CN103309066B (zh) * 2013-06-17 2015-12-23 深圳市华星光电技术有限公司 信号线倾斜角测量方法及装置
JP6365977B2 (ja) * 2014-07-25 2018-08-01 凸版印刷株式会社 三次元形状計測装置、三次元形状計測方法及び薄膜計測装置
US10365225B1 (en) * 2015-03-04 2019-07-30 Kla-Tencor Corporation Multi-location metrology
WO2017048687A1 (en) * 2015-09-17 2017-03-23 Gerhard Maale Sensor device for biosensing and other applications
CN108700829B (zh) 2016-02-26 2021-05-18 Asml荷兰有限公司 测量结构的方法、检查设备、光刻系统、器件制造方法
KR102370347B1 (ko) * 2017-02-02 2022-03-04 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치 및 연계된 컴퓨터 제품
WO2018172027A1 (en) 2017-03-23 2018-09-27 Asml Netherlands B.V. Asymmetry monitoring of a structure
CN110546577B (zh) 2017-04-28 2022-05-24 Asml荷兰有限公司 计量方法和设备以及相关联的计算机程序
JP7159212B2 (ja) * 2017-05-17 2022-10-24 アプライド マテリアルズ イスラエル リミテッド 製造プロセス欠陥を検出するための方法、コンピュータプログラム製品およびシステム
US11393118B2 (en) 2019-06-18 2022-07-19 Kla Corporation Metrics for asymmetric wafer shape characterization
US11309202B2 (en) * 2020-01-30 2022-04-19 Kla Corporation Overlay metrology on bonded wafers
US11512948B2 (en) * 2020-05-26 2022-11-29 Kla Corporation Imaging system for buried metrology targets

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3782827A (en) * 1971-08-04 1974-01-01 Itek Corp Optical device for characterizing the surface or other properties of a sample
FI56451C (fi) * 1977-10-20 1980-01-10 Ahlstroem Oy Foerfarande och anordning foer maetning av traevirke
US4693607A (en) * 1983-12-05 1987-09-15 Sunkist Growers Inc. Method and apparatus for optically measuring the volume of generally spherical fruit
US4864150A (en) * 1988-02-09 1989-09-05 Russell Corporation Method for inspecting, detecting and distinguishing sides of fabrics
JPH0674968B2 (ja) * 1988-03-15 1994-09-21 三菱電機株式会社 光学式測定装置
US4844616A (en) * 1988-05-31 1989-07-04 International Business Machines Corporation Interferometric dimensional measurement and defect detection method
EP0355496A3 (de) * 1988-08-15 1990-10-10 Sumitomo Heavy Industries Co., Ltd. Positionsdetektor mit sektorieller fresnelscher Zonenplatte
US5064291A (en) * 1990-04-03 1991-11-12 Hughes Aircraft Company Method and apparatus for inspection of solder joints utilizing shape determination from shading
US5272517A (en) * 1990-06-13 1993-12-21 Matsushita Electric Industrial Co., Ltd. Height measurement apparatus using laser light beam
IL99823A0 (en) 1990-11-16 1992-08-18 Orbot Instr Ltd Optical inspection method and apparatus
JP2796899B2 (ja) * 1991-02-16 1998-09-10 住友重機械工業株式会社 色収差２重焦点装置における帯域光および複色光照明方法
US5097516A (en) * 1991-02-28 1992-03-17 At&T Bell Laboratories Technique for illuminating a surface with a gradient intensity line of light to achieve enhanced two-dimensional imaging
JPH05107032A (ja) * 1991-10-16 1993-04-27 Matsushita Electric Ind Co Ltd 実装基板外観検査方法
JP2833908B2 (ja) * 1992-03-04 1998-12-09 山形日本電気株式会社 露光装置における位置決め装置
JPH0682225A (ja) * 1992-09-04 1994-03-22 Koyo Seiko Co Ltd ３次元形状測定における被測定物回転中心位置の算出方法
US5544256A (en) 1993-10-22 1996-08-06 International Business Machines Corporation Automated defect classification system
JPH07253311A (ja) 1994-03-15 1995-10-03 Fujitsu Ltd パターン検査装置の較正方法、パターン検査方法、パターン位置決定方法、および半導体装置の製造方法
US5739909A (en) * 1995-10-10 1998-04-14 Lucent Technologies Inc. Measurement and control of linewidths in periodic structures using spectroscopic ellipsometry
US6104486A (en) 1995-12-28 2000-08-15 Fujitsu Limited Fabrication process of a semiconductor device using ellipsometry
US6081325A (en) 1996-06-04 2000-06-27 Kla-Tencor Corporation Optical scanning system for surface inspection
US5815274A (en) * 1996-12-31 1998-09-29 Pitney Bowes Inc. Method for dimensional weighing by spaced line projection
US6256093B1 (en) 1998-06-25 2001-07-03 Applied Materials, Inc. On-the-fly automatic defect classification for substrates using signal attributes
US6052188A (en) 1998-07-08 2000-04-18 Verity Instruments, Inc. Spectroscopic ellipsometer
US6031614A (en) * 1998-12-02 2000-02-29 Siemens Aktiengesellschaft Measurement system and method for measuring critical dimensions using ellipsometry
US6650422B2 (en) * 2001-03-26 2003-11-18 Advanced Micro Devices, Inc. Scatterometry techniques to ascertain asymmetry profile of features and generate a feedback or feedforward process control data associated therewith
KR20060025834A (ko) * 2004-09-17 2006-03-22 삼성전자주식회사 공정 진행시 반도체 제조 장치 및 웨이퍼의 이상 유무를검출하는 검출 시스템 및 그의 제어 방법

Also Published As

Publication number Publication date
JP2005509132A (ja) 2005-04-07
KR20030085067A (ko) 2003-11-01
CN1500200A (zh) 2004-05-26
TW540092B (en) 2003-07-01
KR101002412B1 (ko) 2010-12-21
EP1373828A1 (de) 2004-01-02
WO2002077570A1 (en) 2002-10-03
KR20090073238A (ko) 2009-07-02
US20020135781A1 (en) 2002-09-26
KR100942039B1 (ko) 2010-02-11
EP1373828B1 (de) 2010-03-10
US6650422B2 (en) 2003-11-18
CN1226591C (zh) 2005-11-09
JP4070609B2 (ja) 2008-04-02

Similar Documents

Publication Publication Date Title
DE60141539D1 (de) Verfahren zur messung von merkmalen mit einem asymmetrischen profil
DE60141366D1 (de) Verfahren zur Detektierung von Bewegungen in der Nähe von automatischen Türen
DE60216389D1 (de) Verfahren zur zerstörungsfreien Prüfung
DE10206824B4 (de) Verfahren zur optischen Füllstandsbestimmung in flüssigkeitsgefüllten Behältern
DE60124114D1 (de) Verfahren zur messung der motorkonstante eines induktionsmotors
DE602004015408D1 (de) Verfahren zur analyse von polymer-populationen
DE602005018852D1 (de) System und Verfahren zur Messung von optischen Störungen
DE69816096D1 (de) Verfahren zur durchflussmessung von rohölströmungen
DE502004003498D1 (de) Verfahren zur ermittlung einer parklücke
DE60232024D1 (de) Retikel und verfahren zur messung optischer eigenschaften
DE60232117D1 (de) Verfahren zur Dickenmessung
DE60016551D1 (de) Verfahren zur Messung einer Proteinkonzentration
DE60215050D1 (de) Verfahren zur automatisierten verbindungserkennung in optischen netzen
DE60212711D1 (de) Verfahren zur Beschichtung mit Fluorkohlenwasserstoffharz
DE60235559D1 (de) Baufahrzeug mit einem System zur Messung von Materialeigenschaften
DE50207337D1 (de) Anordnung und verfahren zur ermittlung von kenngrössen
DE602004014071D1 (de) Radar-Vorrichtung und Verfahren zur Messung von Abstand und Reflektionsfaktor
DE50209427D1 (de) Verfahren zur Entfernungsmessung
DE502004002649D1 (de) Verfahren und vorrichtung zur messung von funkstörpegeln mit frequenznachführung
DE50204097D1 (de) Verfahren zur ermittlung von auswirkungen von konstruktionsentscheidungen
DE502004007270D1 (de) Verfahren zur bestimmung der aktuellen kopfposition von fahrzeuginsassen
DE60320887D1 (de) Verfahren zur Reflektanzerfassung
DE50204921D1 (de) Verfahren zur Fahrbahnklassifizierung
DE60203514D1 (de) Verfahren zur zuteilung von stockwerkanrufen
DE112004001192D2 (de) Bauteil mit einem Strukturelement mit magnetischen Eigenschaften und Verfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition