DE60127651D1 - Bitleitungs-Vorladungs- und -Entladungsschaltung zum Programmieren eines nichtflüchtigen Speichers - Google Patents

Bitleitungs-Vorladungs- und -Entladungsschaltung zum Programmieren eines nichtflüchtigen Speichers

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Publication number
DE60127651D1
DE60127651D1 DE60127651T DE60127651T DE60127651D1 DE 60127651 D1 DE60127651 D1 DE 60127651D1 DE 60127651 T DE60127651 T DE 60127651T DE 60127651 T DE60127651 T DE 60127651T DE 60127651 D1 DE60127651 D1 DE 60127651D1
Authority
DE
Germany
Prior art keywords
programming
bit line
nonvolatile memory
discharge circuit
line precharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60127651T
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English (en)
Other versions
DE60127651T2 (de
Inventor
Yeong-Taek Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE60127651D1 publication Critical patent/DE60127651D1/de
Application granted granted Critical
Publication of DE60127651T2 publication Critical patent/DE60127651T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/24Bit-line control circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/30Power supply circuits
DE60127651T 2001-02-22 2001-09-20 Bitleitungs-Vorladungs- und -Entladungsschaltung zum Programmieren eines nichtflüchtigen Speichers Expired - Lifetime DE60127651T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US791473 2001-02-22
US09/791,473 US6480419B2 (en) 2001-02-22 2001-02-22 Bit line setup and discharge circuit for programming non-volatile memory

Publications (2)

Publication Number Publication Date
DE60127651D1 true DE60127651D1 (de) 2007-05-16
DE60127651T2 DE60127651T2 (de) 2007-12-27

Family

ID=25153841

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60127651T Expired - Lifetime DE60127651T2 (de) 2001-02-22 2001-09-20 Bitleitungs-Vorladungs- und -Entladungsschaltung zum Programmieren eines nichtflüchtigen Speichers

Country Status (7)

Country Link
US (5) US6480419B2 (de)
EP (1) EP1235230B1 (de)
JP (1) JP4169965B2 (de)
KR (1) KR100454116B1 (de)
CN (1) CN1196137C (de)
DE (1) DE60127651T2 (de)
TW (1) TW525175B (de)

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US20030026144A1 (en) 2003-02-06
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US20020114188A1 (en) 2002-08-22
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US6480419B2 (en) 2002-11-12

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