DE60124404D1 - Cmp-polierzusammensetzung für metall - Google Patents

Cmp-polierzusammensetzung für metall

Info

Publication number
DE60124404D1
DE60124404D1 DE60124404T DE60124404T DE60124404D1 DE 60124404 D1 DE60124404 D1 DE 60124404D1 DE 60124404 T DE60124404 T DE 60124404T DE 60124404 T DE60124404 T DE 60124404T DE 60124404 D1 DE60124404 D1 DE 60124404D1
Authority
DE
Germany
Prior art keywords
metal
polishing composition
cmp polishing
compositions
tantalum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60124404T
Other languages
English (en)
Other versions
DE60124404T2 (de
Inventor
Shumin Wang
K Grumbine
C Streinz
W Hoglund
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials Inc
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of DE60124404D1 publication Critical patent/DE60124404D1/de
Application granted granted Critical
Publication of DE60124404T2 publication Critical patent/DE60124404T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE60124404T 2000-07-05 2001-06-14 Cmp-polierzusammensetzung für metall Expired - Lifetime DE60124404T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US609882 2000-07-05
US09/609,882 US6592776B1 (en) 1997-07-28 2000-07-05 Polishing composition for metal CMP
PCT/US2001/019057 WO2002002706A1 (en) 2000-07-05 2001-06-14 Polishing composition for metal cmp

Publications (2)

Publication Number Publication Date
DE60124404D1 true DE60124404D1 (de) 2006-12-21
DE60124404T2 DE60124404T2 (de) 2007-08-23

Family

ID=24442734

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60124404T Expired - Lifetime DE60124404T2 (de) 2000-07-05 2001-06-14 Cmp-polierzusammensetzung für metall

Country Status (9)

Country Link
US (2) US6592776B1 (de)
EP (1) EP1299489B1 (de)
JP (1) JP4510374B2 (de)
CN (1) CN1216953C (de)
AT (1) ATE344830T1 (de)
AU (1) AU2001271308A1 (de)
DE (1) DE60124404T2 (de)
TW (1) TWI261063B (de)
WO (1) WO2002002706A1 (de)

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US6592776B1 (en) * 1997-07-28 2003-07-15 Cabot Microelectronics Corporation Polishing composition for metal CMP
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US6646348B1 (en) * 2000-07-05 2003-11-11 Cabot Microelectronics Corporation Silane containing polishing composition for CMP
US6762132B1 (en) 2000-08-31 2004-07-13 Micron Technology, Inc. Compositions for dissolution of low-K dielectric films, and methods of use
CN1255854C (zh) * 2001-01-16 2006-05-10 卡伯特微电子公司 含有草酸铵的抛光系统及方法
JP2002288821A (ja) * 2001-03-27 2002-10-04 Showa Denko Kk テクスチャリング加工用組成物
US6953389B2 (en) * 2001-08-09 2005-10-11 Cheil Industries, Inc. Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching
TW591089B (en) * 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
US7077880B2 (en) * 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
JP2003313542A (ja) 2002-04-22 2003-11-06 Jsr Corp 化学機械研磨用水系分散体
US20070015448A1 (en) * 2003-08-07 2007-01-18 Ppg Industries Ohio, Inc. Polishing pad having edge surface treatment
US20050045852A1 (en) * 2003-08-29 2005-03-03 Ameen Joseph G. Particle-free polishing fluid for nickel-based coating planarization
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US7422684B1 (en) 2003-10-16 2008-09-09 S.I.P. Technologies, L.L.C. Method and apparatus for sanitizing water dispensed from a water dispenser having a reservoir
US20060124592A1 (en) * 2004-12-09 2006-06-15 Miller Anne E Chemical mechanical polish slurry
WO2006119249A2 (en) * 2005-04-29 2006-11-09 Brown University Aerogels and methods of using the same for chemical mechanical planarization and for extracting metal ions
WO2008004534A1 (fr) * 2006-07-04 2008-01-10 Hitachi Chemical Co., Ltd. Liquide de polissage pour le polissage mécano-chimique
MY153666A (en) 2006-07-12 2015-03-13 Cabot Microelectronics Corporations Cmp method for metal-containing substrates
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
US20080274618A1 (en) * 2007-05-04 2008-11-06 Ferro Corporation Polishing composition and method for high selectivity polysilicon cmp
EP2188344B1 (de) * 2007-09-21 2016-04-27 Cabot Microelectronics Corporation Polierzusammensetzung und verfahren anhand von aminosilanbehandelten schleifpartikeln
JP5619009B2 (ja) * 2008-09-19 2014-11-05 キャボット マイクロエレクトロニクス コーポレイションＣａｂｏｔ Ｍｉｃｒｏｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐｏｒａｔｉｏｎ 低ｋ誘電体のためのバリアースラリー
JP2010167551A (ja) * 2008-12-26 2010-08-05 Nomura Micro Sci Co Ltd 使用済みスラリーの再生方法
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US9090799B2 (en) * 2010-11-08 2015-07-28 Fujimi Incorporated Composition for polishing and method of polishing semiconductor substrate using same
US8524540B2 (en) * 2011-02-01 2013-09-03 Nilesh Kapadia Adhesion promoting composition for metal leadframes
CN104371551B (zh) * 2013-08-14 2018-01-12 安集微电子（上海）有限公司 一种碱性阻挡层化学机械抛光液
CN103498161B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种金属抛光防腐浆料
CN103498160B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种抛光浆料
CN103484876B (zh) * 2013-09-23 2016-01-13 无锡阳工机械制造有限公司 一种除锈浆料
CN103526207B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种除锈浆料
CN104745087B (zh) * 2013-12-25 2018-07-24 安集微电子（上海）有限公司 一种化学机械抛光液以及抛光方法
US9385000B2 (en) * 2014-01-24 2016-07-05 United Microelectronics Corp. Method of performing etching process
JP6800411B2 (ja) 2015-01-13 2020-12-16 シーエムシー マテリアルズ，インコーポレイティド 洗浄用組成物及びｃｍｐ後の半導体ウエハーの洗浄方法
CN105331992A (zh) * 2015-10-15 2016-02-17 当涂县维思共创工业产品设计有限公司 一种铝表面脱脂除油剂
CN105369273A (zh) * 2015-10-15 2016-03-02 当涂县维思共创工业产品设计有限公司 一种铝型材表面清洗抛光剂
US10586914B2 (en) 2016-10-14 2020-03-10 Applied Materials, Inc. Method of forming ultra-smooth bottom electrode surface for depositing magnetic tunnel junctions
US10037889B1 (en) * 2017-03-29 2018-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films
KR102619857B1 (ko) * 2020-05-20 2023-12-29 삼성에스디아이 주식회사 텅스텐 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 연마 방법

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US6582623B1 (en) * 1999-07-07 2003-06-24 Cabot Microelectronics Corporation CMP composition containing silane modified abrasive particles
US6225223B1 (en) * 1999-08-16 2001-05-01 Taiwan Semiconductor Manufacturing Company Method to eliminate dishing of copper interconnects
CN1255854C (zh) * 2001-01-16 2006-05-10 卡伯特微电子公司 含有草酸铵的抛光系统及方法

Also Published As

Publication number Publication date
ATE344830T1 (de) 2006-11-15
US6767476B2 (en) 2004-07-27
TWI261063B (en) 2006-09-01
EP1299489B1 (de) 2006-11-08
US6592776B1 (en) 2003-07-15
CN1436225A (zh) 2003-08-13
AU2001271308A1 (en) 2002-01-14
JP2004502823A (ja) 2004-01-29
CN1216953C (zh) 2005-08-31
US20030203635A1 (en) 2003-10-30
JP4510374B2 (ja) 2010-07-21
WO2002002706A1 (en) 2002-01-10
DE60124404T2 (de) 2007-08-23
EP1299489A1 (de) 2003-04-09

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