DE60118974D1 - Räumlich modulierter reflektor für eine optoelektronische vorrichtung - Google Patents
Räumlich modulierter reflektor für eine optoelektronische vorrichtungInfo
- Publication number
- DE60118974D1 DE60118974D1 DE60118974T DE60118974T DE60118974D1 DE 60118974 D1 DE60118974 D1 DE 60118974D1 DE 60118974 T DE60118974 T DE 60118974T DE 60118974 T DE60118974 T DE 60118974T DE 60118974 D1 DE60118974 D1 DE 60118974D1
- Authority
- DE
- Germany
- Prior art keywords
- refractive index
- vcsel
- optoelectronic device
- spatially modulated
- reflector layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/166—Single transverse or lateral mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/18327—Structure being part of a DBR
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/751,423 US6727520B2 (en) | 2000-12-29 | 2000-12-29 | Spatially modulated reflector for an optoelectronic device |
| US751423 | 2000-12-29 | ||
| PCT/US2001/050214 WO2002059938A2 (en) | 2000-12-29 | 2001-12-20 | Spatially modulated reflector for an optoelectronic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60118974D1 true DE60118974D1 (de) | 2006-05-24 |
| DE60118974T2 DE60118974T2 (de) | 2007-01-04 |
Family
ID=25021913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60118974T Expired - Lifetime DE60118974T2 (de) | 2000-12-29 | 2001-12-20 | Räumlich modulierter reflektor für eine optoelektronische vorrichtung |
Country Status (10)
| Country | Link |
|---|---|
| US (4) | US6727520B2 (de) |
| EP (1) | EP1352455B1 (de) |
| JP (1) | JP2004523896A (de) |
| KR (1) | KR20040018249A (de) |
| AT (1) | ATE323959T1 (de) |
| AU (1) | AU2002246819A1 (de) |
| CA (1) | CA2433357A1 (de) |
| DE (1) | DE60118974T2 (de) |
| TW (1) | TW517417B (de) |
| WO (1) | WO2002059938A2 (de) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6727520B2 (en) * | 2000-12-29 | 2004-04-27 | Honeywell International Inc. | Spatially modulated reflector for an optoelectronic device |
| KR100475858B1 (ko) * | 2002-04-01 | 2005-03-18 | 주식회사 테라스테이트 | 수직공진 표면 발광레이저 |
| TW200505120A (en) * | 2003-07-29 | 2005-02-01 | Copax Photonics Corp | Single transverse mode vertical cavity surface emitting laser device with array structure and method for fabricating the same |
| US7596165B2 (en) * | 2004-08-31 | 2009-09-29 | Finisar Corporation | Distributed Bragg Reflector for optoelectronic device |
| US7920612B2 (en) * | 2004-08-31 | 2011-04-05 | Finisar Corporation | Light emitting semiconductor device having an electrical confinement barrier near the active region |
| US7391799B2 (en) * | 2004-08-31 | 2008-06-24 | Finisar Corporation | Mode selective semiconductor mirror for vertical cavity surface emitting lasers |
| US7829912B2 (en) * | 2006-07-31 | 2010-11-09 | Finisar Corporation | Efficient carrier injection in a semiconductor device |
| JP5376104B2 (ja) * | 2005-07-04 | 2013-12-25 | ソニー株式会社 | 面発光型半導体レーザ |
| JP2007109737A (ja) * | 2005-10-11 | 2007-04-26 | Toshiba Corp | 窒化物半導体レーザ装置及びその製造方法 |
| JP2007165501A (ja) * | 2005-12-13 | 2007-06-28 | Seiko Epson Corp | 面発光型半導体レーザ及びその製造方法 |
| US7883914B2 (en) * | 2006-05-29 | 2011-02-08 | Alight Technologies A/S | Method for fabricating a photonic crystal or photonic bandgap vertical-cavity surface-emitting laser |
| US8031752B1 (en) | 2007-04-16 | 2011-10-04 | Finisar Corporation | VCSEL optimized for high speed data |
| JP4582237B2 (ja) * | 2008-01-10 | 2010-11-17 | ソニー株式会社 | 面発光型半導体レーザ |
| US8077752B2 (en) * | 2008-01-10 | 2011-12-13 | Sony Corporation | Vertical cavity surface emitting laser |
| WO2011046244A1 (ko) * | 2009-10-16 | 2011-04-21 | 서울대학교산학협력단 | Ⅲ족 질화물 표면 격자 반사체 |
| DE102009056387B9 (de) * | 2009-10-30 | 2020-05-07 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaser mit einem Phasenstrukturbereich zur Selektion lateraler Lasermoden |
| JP5532239B2 (ja) * | 2009-11-26 | 2014-06-25 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
| JP5743520B2 (ja) | 2010-12-10 | 2015-07-01 | キヤノン株式会社 | 面発光レーザ及び画像形成装置 |
| EP2533380B8 (de) * | 2011-06-06 | 2017-08-30 | Mellanox Technologies, Ltd. | Hochgeschwindigkeitslaservorrichtung |
| JP2015008271A (ja) * | 2013-05-31 | 2015-01-15 | 株式会社リコー | 面発光レーザ素子及び原子発振器 |
| DE102014102360A1 (de) * | 2014-02-24 | 2015-08-27 | Osram Opto Semiconductors Gmbh | Laserdiodenchip |
| CN104297825B (zh) * | 2014-10-17 | 2017-04-05 | 中国科学院上海光学精密机械研究所 | 强激光涡旋反射镜 |
| US9979158B1 (en) * | 2017-01-12 | 2018-05-22 | Technische Universitaet Berlin | Vertical-cavity surface-emitting laser |
| FR3078834B1 (fr) * | 2018-03-08 | 2020-03-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif d’emission lumineuse comportant au moins un vcsel et une lentille de diffusion |
| JP7258591B2 (ja) * | 2019-02-21 | 2023-04-17 | スタンレー電気株式会社 | 垂直共振器型発光素子 |
| US11476378B2 (en) * | 2019-05-03 | 2022-10-18 | University Of Central Florida Research Foundation, Inc. | Solar-energy apparatus, methods, and applications |
| WO2021150304A1 (en) * | 2020-01-23 | 2021-07-29 | Yale University | Stacked high contrast gratings and methods of making and using thereof |
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-
2000
- 2000-12-29 US US09/751,423 patent/US6727520B2/en not_active Expired - Fee Related
-
2001
- 2001-12-20 DE DE60118974T patent/DE60118974T2/de not_active Expired - Lifetime
- 2001-12-20 AU AU2002246819A patent/AU2002246819A1/en not_active Abandoned
- 2001-12-20 EP EP01994427A patent/EP1352455B1/de not_active Expired - Lifetime
- 2001-12-20 CA CA002433357A patent/CA2433357A1/en not_active Abandoned
- 2001-12-20 JP JP2002560170A patent/JP2004523896A/ja active Pending
- 2001-12-20 KR KR10-2003-7008908A patent/KR20040018249A/ko not_active Application Discontinuation
- 2001-12-20 AT AT01994427T patent/ATE323959T1/de not_active IP Right Cessation
- 2001-12-20 WO PCT/US2001/050214 patent/WO2002059938A2/en not_active Application Discontinuation
- 2001-12-28 TW TW090132789A patent/TW517417B/zh not_active IP Right Cessation
-
2004
- 2004-04-07 US US10/819,775 patent/US20040188695A1/en not_active Abandoned
- 2004-04-07 US US10/819,654 patent/US7266135B2/en not_active Expired - Fee Related
-
2007
- 2007-07-19 US US11/776,504 patent/US7760786B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20040188695A1 (en) | 2004-09-30 |
| WO2002059938A3 (en) | 2003-07-31 |
| JP2004523896A (ja) | 2004-08-05 |
| US20020085610A1 (en) | 2002-07-04 |
| US20080037606A1 (en) | 2008-02-14 |
| AU2002246819A1 (en) | 2002-08-06 |
| TW517417B (en) | 2003-01-11 |
| US7760786B2 (en) | 2010-07-20 |
| US6727520B2 (en) | 2004-04-27 |
| US7266135B2 (en) | 2007-09-04 |
| US20040191941A1 (en) | 2004-09-30 |
| EP1352455B1 (de) | 2006-04-19 |
| DE60118974T2 (de) | 2007-01-04 |
| CA2433357A1 (en) | 2002-08-01 |
| WO2002059938A2 (en) | 2002-08-01 |
| KR20040018249A (ko) | 2004-03-02 |
| EP1352455A2 (de) | 2003-10-15 |
| ATE323959T1 (de) | 2006-05-15 |
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